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1. Ion-assisted trench-filling method may lead to perfect metal inlays down to 100 nm.

Author

Ajluni, Cheryl

Subjects
*ION beam lithography, *INTEGRATED circuits
Abstract

Focuses on ion-assisted trench filling, a lithographic technique developed to facilitate higher densities and multilevel connections in the smallest chips. Development of the technique at Lawrence Berkeley National Laboratory; Absence of voids using the technique.

Published
1999

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