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The article focuses on the Ni-based fully silicided (FUSI) technology introduced by the Interuniversity Microelectronics Center at the Symposium on VLSI Circuits in Honolulu, Hawaii in June 2006. The center made FUSI a manufacturable and reliable process for the 45nm node. Excellent low-power, high-performance specifications were achieved and process window has been improved and work function can be modulated in a practical way.