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Recently, it was stipulated in a publication that a missing elementary active-device termed "trancitor" by its designer could be made and could greatly simplify electronic circuits. This elementary device has been presented as a CCVS (Current Control Voltage Source), unlike a bipolar transistor which is a CCCS (Current Control Current Source). In the present paper, the electrical behavior of the CCVS-type trancitor in Silicon (Si), Germanium (Ge), Gallium arsenide (GaAs), Silicon Carbide (3C-SiC and 6H-SiC), Indium Nitride (InN) and Indium Phosphide (InP) technologies have been studied. The input-output transfer characteristics (Ix-Vy) of the p-type and n-type CCVS trancitors have been investigated. In addition, the effect of doping concentration on the n-type CCVS trancitor in Si technology has been studied. This study is based on TCAD (Technology Computer Aided Design) simulation. The results show that the Hall voltage of the CCVS trancitor depends on the electrical properties of the semiconductor material, such as carrier mobility (µ), band gap (Eg) and hole/electron effective mass (m). Moreover, these trancitors are compatible with the model proposed for the first time. The CCVS trancitor proved its worth in semiconductor technologies as well as being a missing active device that satisfies Moore's law. [ABSTRACT FROM AUTHOR]