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Here, we investigate the effects of O2:N2 (1:1) as ambient gas as compared with pure N2 during activation annealing of Mg as p-type doping in GaN layers grown by MOCVD. The purpose is to understand the impact of O2 on the resulting free hole concentration and hole mobility using SIMS, XRD, STEM, AFM, and Hall effect measurements. Even though the presence of O2 in the ambient gas during annealing is very effective in reducing the H level of the Mg-doped GaN layers, the maximum achievable hole concentration and mobility is still higher with pure N2. The differences are explained by an in-diffusion of O to the GaN layer acting as n-dopant and, thus, giving rise to a compensation effect. The Mg–H complexes at substitutional (MgGa), i.e., the electrically active acceptor sites that provide free holes, are preferentially activated by annealing with N2 only as ambient gas, while annealing with O2:N2 (1:1) also dissociates electrically inactive Mg–H complexes resulting in much less residual H. At the lower growth pressure of 150 mbar compared to higher growth pressure of 300 mbar, an increasing carbon incorporation leads to a compensation effect drastically reducing the free hole concentration while the mobility is unaffected. [ABSTRACT FROM AUTHOR]

Heterogeneous integration of functional oxides with ultra-wide bandgap (UWBG) semiconductors is desired for the realization of novel hybrid systems applicable to a wide array of commercial electronics and defense applications. In this work, we demonstrate the growth of crystalline SrTiO3 (STO) thin films on high-electron-mobility transistor (HEMT) heterostructures based on an emergent UWBG semiconductor ScAlN, used as the barrier layer on a GaN channel, and determine the effects of the pre-growth chemical treatments of the ScAlN surface on resultant heterostructure properties. We investigate wet chemical cleans of ScAlN with solvents, piranha solution, UV ozone and hydrofluoric acid, and a sulfuric-phosphoric acid mix prior to STO growth, and show that the commonly used piranha solution degrades the ScAlN surface, thereby reducing the crystal quality of the deposited STO layers and lowering the channel mobility. We determine that among the treatments studied, the solvent and sulfuric-phosphoric acid cleans were the least disruptive to the electrical properties of the GaN channel as evidenced from Hall effect measurements, but the sulfuric-phosphoric acid clean results in best oxide crystallinity, as determined from structural characterizations. We perform transmission electron microscopy imaging on the piranha-treated and sulfuric-phosphoric-treated samples to compare the microstructure and find that while intermixing occurs at the oxide-nitride interfaces for both samples, the interface roughness is lower and the STO grain size is larger in the sample with sulfuric-phosphoric acid treatment. This work demonstrates the first epitaxial growth of STO on an UWBG semiconductor and motivates STO/ScAlN/GaN as material platforms for high-frequency, high-power-density HEMTs. [ABSTRACT FROM AUTHOR]

This Letter reports the device and material investigations of enhancement-mode p-GaN-gate AlGaN/GaN high electron mobility transistors (HEMTs) for Venus exploration and other harsh environment applications. The GaN transistor in this work was subjected to prolonged exposure (11 days) in a simulated Venus environment (460 °C, 94 bar, complete chemical environment including CO2/N2/SO2). The mechanisms affecting the transistor performance and structural integrity in harsh environment were analyzed using a variety of experimental, simulation, and modeling techniques, including in situ electrical measurement (e.g., burn-in) and advanced microscopy (e.g., structural deformation). Through transistor, Transmission Line Method (TLM), and Hall-effect measurements vs temperature, it is revealed that the mobility decrease is the primary cause of reduction of on-state performance of this GaN transistor at high temperature. Material analysis of the device under test (DUT) confirmed the absence of foreign elements from the Venus atmosphere. No inter-diffusion of the elements (including the gate metal) was observed. The insights of this work are broadly applicable to the future design, fabrication, and deployment of robust III-N devices for harsh environment operation. [ABSTRACT FROM AUTHOR]

The formation of intrinsic point defects in the N-sublattice of semi-insulating Mg-doped GaN crystals grown by the ammonothermal method (SI AT GaN:Mg) was investigated for the first time. The grown-in defects produced by the displacement of nitrogen atoms were experimentally observed as deep traps revealed by the Laplace transform photoinduced transient spectroscopy in the compensated p-type crystals with the Mg concentrations of 6 × 1018 and 2 × 1019 cm−3 and resistivities of ~1011 Ωcm and ~106 Ωcm, respectively. In both kinds of materials, three closely located traps with activation energies of 430, 450, and 460 meV were revealed. The traps, whose concentrations in the stronger-doped material were found to be significantly higher, are assigned to the (3+/+) and (2+/+) transition levels of nitrogen vacancies as well as to the (2+/+) level of nitrogen split interstitials, respectively. In the material with the lower Mg concentration, a middle-gap trap with the activation energy of 1870 meV was found to be predominant. The results are confirmed and quantitatively described by temperature-dependent Hall effect measurements. The mechanism of nitrogen atom displacement due to the local strain field arising in SI AT GaN:Mg is proposed and the effect of the Mg concentration on the charge compensation is discussed. [ABSTRACT FROM AUTHOR]

Impact of carbon impurities on the electrical properties of lightly doped n-type GaN [electron concentration ∼(1 – 2) × 10 15 cm − 3 at room temperature] was investigated using temperature-dependent Hall effect measurements. GaN crystals with a threading dislocation density of (1 – 3) × 10 6 c m − 2 were grown by our originally developed quartz-free hydride vapor phase epitaxy method, which enabled the background Si, O, and C concentrations to be suppressed to below the mid-1014 cm−3 range. We prepared three samples with different C concentrations ([C]) by intentional C doping. The C incorporation induced severe mobility collapse at temperatures greater than 60 K, where the measured mobility decreased and deviated from the theoretical value as [C] increased. The mobility collapse was eliminated for the purest GaN crystal with [C] ∼ 1.4 × 10 14 cm − 3 , exhibiting a record high room-temperature mobility of 1480 cm2/(V·s), as well as a record high maximum mobility of 14 300 cm2/(V·s) at 62 K. The latter was almost double the previous record. We found that the overall mobility behavior can be well reproduced by adding an empirical [C]-dependent mobility component expressed as μ UNK = K / T n UNK with 1 ≤ n UNK ≤ 2 and K ∝ C − 1 to the conventional mobility theory (phonon and impurity scattering). Although the mechanism of the component remains uncertain, our findings provide insight into the unsolved issue of mobility collapse. [ABSTRACT FROM AUTHOR]

Herein, the electrical and thermal performance of lateral AlGaN/GaN high electron mobility transistors (HEMTs) and metal‐insulator‐semiconductor field effect transistors (MISFETs) fabricated with 11 μm thick GaN buffer layers on 200 mm diameter Qromis Substrate Technology (QST) substrates are investigated. The QST substrate has a polycrystalline core engineered to be coefficient of thermal expansion (CTE)‐matched to GaN to minimize wafer bow and residual stress in the GaN film as a result of epitaxial growth. Raman spectroscopy is used to determine the biaxial residual stress in the GaN buffer of the as‐fabricated devices. Electrical characterization is demonstrated on the HEMTs including DC and pulsed output characteristics, DC transfer characteristics, Hall mobility, carrier concentration, sheet resistance, median transition frequency, and maximum stable gain. Finally, the thermal performance of the AlGaN/GaN MISFET is assessed via thermoreflectance thermal imaging at DC power densities up to 19 W mm−1. The thermal resistance of the MISFET, calculated using the peak temperature rises on the gate electrode for DC power densities <10 W mm−1, is measured to be 15.4 mm K W−1, which is comparable with state‐of‐the‐art GaN‐on‐Si lateral transistors. [ABSTRACT FROM AUTHOR]

In the case of molecular beam epitaxy (MBE), the Mg acceptors are electrically active in the as‐grown material and a priori no additional annealing procedure is necessary. However, there are still some peculiarities in the electrical properties of ammonia‐process grown GaN:Mg and some annealing effect can be observed. Additionally, the character of weak temperature dependence in the vicinity of room temperature suggests that to describe the conduction process an additional conduction channel not related to the free carriers in the valence band must be taken into account. For these reasons, this article presents the results of low‐temperature resistivity and Hall Effect studies of Mg‐doped, ammonia‐process‐grown GaN. The studied samples are grown on low‐temperature buffers of GaN deposited on a sapphire substrate. High‐temperature annealing process (≈800 K) is carried out for all of them. The temperature dependences of the electrical transport properties before and after the annealing procedure are especially investigated at temperatures ranging from 10 up to 300 K. It is found that the low temperatures transport properties are sensitive to the annealing procedure and to describe the observed effects the hopping phenomena must be taken into account. [ABSTRACT FROM AUTHOR]

Quantum transport properties of a large bandgap In0.15Al0.79Ga0.06N/GaN quaternary GaN high electron mobility transistor (HEMT) heterostructure are studied at low temperatures up to 2 K. Herein, we report the first evidence of weak localization in a quaternary GaN two-dimensional electron gas (2DEG) system. We observe negative magnetoresistance behavior and extracted dephasing time (τ Φ) using a Hikami–Larkin–Nagaoka model at 2.2 K. Linear dependency of dephasing rate with temperature (τ Φ − 1 ∝ T) is established below 20 K. Furthermore, Shubnikov–de Haas quantum oscillation induced by 2DEG is observed using perpendicular magnetic (B⊥) field strengths up to 14 T. From the temperature-dependent oscillation amplitude, we extracted an effective mass m * ≈ 0.237 m e . The dominance of small-angle scattering in the 2DEG channel is identified from less than unit ratio (τ q / τ t ≪ 1) of quantum lifetime (τ q) to the Hall transport lifetime (τ t). In our study, we have demonstrated that the In0.15Al0.79Ga0.06N/GaN quaternary heterostructure possesses high dephasing time (τ Φ = 5.4 ps) and larger quantum lifetime (τ q = 0.102 ps) indicating better suitability and a way forward to high-power–high-frequency GaN HEMT development. [ABSTRACT FROM AUTHOR]

A two-dimensional hole gas (2DHG) induced by polarization charges at the GaN/AlGaN hetero-interface is attracting much attention because of its potential to develop p-channel transistors required for GaN complementary logic integrated circuits. This platform is compatible with commercial AlGaN/GaN n-channel electronics, but the performance of GaN p-channel transistors has been far behind. In this work, 2DHGs in GaN/AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy have been investigated. The Al composition of the AlGaN barrier has been pushed as high as possible without obvious strain relaxation, and the record high 2DHG sheet density and conductivity on the GaN/AlGaN/GaN platform have been obtained. By adopting a parallel conduction model, a dependent relationship of the 2DHG density on temperature has been extracted. The temperature dependent Hall-effect results have demonstrated that the 2DHG density boosts by 75 times and 46 times at room temperature and 77 K, respectively, when the Al composition is pushed from 0.18 to 0.45 for the AlGaN barriers. The 2DHG sheet density reaches 3.6 × 1013 and 2.1 × 1013 cm−2 at room temperature and 77 K, respectively, and the lowest sheet resistance is 8.9 kΩ/□ at 77 K. Such a 2DHG is beneficial for fabrication of p-channel GaN transistors with lower on-resistance on the already-industrialized platform. [ABSTRACT FROM AUTHOR]

AlScN is attractive as a lattice-matched epitaxial barrier layer for incorporation in GaN high electron mobility transistors due to its large dielectric constant and polarization. The transport properties of polarization-induced two-dimensional (2D) electron gas of densities of ∼ 2 × 10 13 /cm2 formed at the AlScN–GaN interface is studied by Hall-effect measurements down to cryogenic temperatures. The 2D electron gas densities exhibit mobilities limited to ∼300 cm2/V s down to 10 K at AlScN/GaN heterojunctions. The insertion of a ∼2 nm AlN interlayer boosts the room temperature mobility by more than five times from ∼300 cm2/V s to ∼ 1573 cm2/V s, and the 10 K mobility by more than 20 times to ∼6980 cm2/V s at 10 K. These measurements provide guidelines to the limits of electron conductivities of these highly polar heterostructures. [ABSTRACT FROM AUTHOR]

Zirconium nitride (ZrN) is a candidate for contact metal and diffusion barrier in ohmic contacts for GaN-based devices due to its superior electrical conductivity and corrosion resistance. This paper reported ZrN films deposited on GaN/Si templates using metal-organic chemical vapor deposition (MOCVD) and analyzed the effect of substrate temperature (T s) on its growth mode, film stress, as well as electrical properties. Firstly, the surface morphology and film roughness of the resultant ZrN epilayers were investigated, which were found to vary dramatically with T s. Then, a temperature-dominated crystal formation process was reasonably proposed, revealing the transfer from the island to layer growth mode and the augmentation of the growth rate of ZrN with elevated T s. Stress information was obtained from the position of XRD diffraction peaks, indicating large in-plane lattice stretching in ZrN film and the presence of compressive stress in the GaN/Si template. The stress states can be related to island merger and thermal mismatch between ZrN and GaN, which proved satisfyingly advantageous in preventing the GaN layer from cracking during the subsequent preparation procedure. In addition, XPS surface and interface investigations were performed to identify the chemical state and the atomic content of the ZrN film, which also implied a relatively clear interface between the ZrN epilayer and GaN/Si template. Furthermore, Hall tests proved the resistivity of ZrN thin film can reach a minimum of 2.28 Ă— 10âˆ'4 Ω cm, owing to the grain boundary chaining and flat film surface at high temperatures. Overall, it appears to have promising prospects for its application in the contact layer and diffusion barrier of ohmic contact in GaN-based devices. [ABSTRACT FROM AUTHOR]

To suppress the electric-field crowding at the edge of GaN-based power devices and enhance the breakdown voltage as well, argon ion (Ar+) implantation has been demonstrated an efficient process of edge termination for n-type GaN, that is realized by the introduction of radiation-induced defects to modify electric-field distribution around the edge of devices. However, a high fluence of Ar+ irradiation inevitably causes radiation damage, which is absolutely detrimental to the electrical and material properties of GaN crystal. Therefore, the purpose of this study is to investigate the effects of radiation damage arising from Ar+ implantation on n-type GaN epitaxial layer. 180 keV Ar ions with various fluences ranging from 4.8 × 1013 to 6 × 1015 cm−2 were implanted, forming a thin damaged area near the surface of GaN epitaxial layer. The characteristics of Ar+-implanted GaN epitaxial layer were then thoroughly investigated by Hall effect measurement, X-ray diffraction (XRD), photoluminescence (PL), and Raman scattering spectroscopy. The results indicated that the electron concentration of GaN decreases with the increase of Ar+ fluence. About 32.5 % of carriers in GaN are removed after Ar+ irradiation to a maximum fluence of 6 × 1015 cm−2. As revealed by PL spectra, Ar+ implantation-induced defects would trap free carriers and behave like non-radiative recombination centers. An abrupt increase in lattice strain derived from XRD spectra implies a localized amorphous layer that may be formed in GaN crystal when Ar+ fluence is higher than 1.2 × 1015 cm−2. The Raman spectra also evidenced that Ar+ implantation into GaN leads to N sublattice damage and degradation in electrical conduction properties. The results obtained in this study are expected to be useful for the design of Ar+-implanted edge termination for GaN power devices. [ABSTRACT FROM AUTHOR]

We propose an optimization method to change the Al component and the thickness of step-graded AlGaN barrier to achieve better electrical performance of the device. Based on the polarization effect, we find that a second potential well occurs while increasing the Al fraction and thickness of the upper AlGaN layer, which contributes to better drain current performance in the simulations. The wafers with different AlGaN barriers were grown to compare their surface morphology and electrical properties. The surface roughness of the wafer is related to the lattice constant of the upper AlGaN layer. According to the Hall and TLM measurements, the electron sheet density and electron mobility of the 20 nm-Al 0.35 Ga 0.65 N/10 nm-Al 0.25 Ga 0.75 N barrier sample are 1593 cm2/Vs and 1.17 × 1013 cm−2 respectively, resulting in a high spacing current of 61.45 mA. Moreover, the maximum drain current density of this barrier device is 589.02 mA/mm under the I–V characteristics, 1.37 times as much as that of the 20 nm-Al 0.25 Ga 0.75 N barrier. The higher gate barrier height of Al 0.35 Ga 0.65 N reduces the gate leakage current. [ABSTRACT FROM AUTHOR]

• Crystallization of GaN:Si,C was carried out to examine the role of C in n-type GaN crystals. • Intentional incorporation of high concentrations of Si and C is possible. • Raman spectroscopy shows low-frequency modes in co-doped crystals, suggesting SiC precipitates. • YL peak's position and intensity vary with dopant specifics, hinting at Si-C complexes or V Ga. In this work co-doping with silicon and carbon in gallium nitride grown by halide vapor phase epitaxy was performed. Native seeds of high structural quality with bowing radii of (0 0 0 1) crystallographic planes higher than 15 m and threading dislocation density on the order of 5 × 104 cm−3 were used. The crystallized material was examined in terms of structural, optical, and electrical properties. For this purpose different characterization methods: X-ray diffraction, Raman spectroscopy, low-temperature photoluminescence, and Hall measurements, were applied. The physical properties of samples doped only with silicon and co-doped with carbon were analyzed and compared. However, during the crystallization process, due to high amount of Si and C, clusters of silicon carbide were unintentionally formed. The formation of these SiC clusters had an impact on the properties of the GaN crystals that were being studied. The research provides an initial insight into the complex studies of co-doping gallium nitride crystals. The results of this paper give us groundwork for more in-depth exploration of this topic. [ABSTRACT FROM AUTHOR]

In this study, magnetron reactive sputtering using a copper oxide target was performed to obtain a series of high-quality CuO x films with high hole concentration. The results of X-ray photoelectron spectroscopy and Hall measurements revealed that the hole concentration exhibited a negative correlation to the Cu + to Cu2+ ratio in the p-type CuO x film. This phenomenon indicated that the hole concentration can be modulated by adjusting film deposition conditions. Considering the high hole concentration and fine surface quality, these CuO x films were used as p-type gates without gate etching and positively shifted the threshold voltage (V th) of AlGaN/GaN high-electron-mobility transistors (HEMTs). This study is the first to achieve quasi-normally off GaN HEMTs using CuO x gates, in which V th positively shifted approximately 2.5 V and reached 0.5 V. Because of the excellent surface quality of the CuO x gate, the off-state current and gate leakage current of GaN HEMTs improved considerably. This study verified that CuO x is a promising gate candidate for fabricating low-cost, normally off AlGaN/GaN HEMTs. [Display omitted] • P-type CuO x gates were obtained through magnetron reactive sputtering of a copper oxide target. • For the first time, a quasi-normally off AlGaN/GaN HEMT with a CuO x gate was achieved. • The Cu+ to Cu2+ ratio in CuO x films was inversely proportional to hole concentration. • Adjustment of Cu+ :Cu2+ in CuO x gates allows the fabrication of AlGaN/GaN HEMTs with different threshold voltages. [ABSTRACT FROM AUTHOR]

Raman and infrared reflectance spectroscopy were used to study GaN single crystals with different doping types and carrier concentrations. In different samples, the characteristic spectra related to LO phonon-plasmon coupled (LOPC) mode are observed as changing regularly with carrier concentration. Furthermore, to obtain the carrier concentration and mobility of GaN crystals, Raman and infrared reflectance spectra with LOPC modes were fitted. The carrier concentration obtained agrees well with that obtained from the Hall measurement, which confirms that these non-contact and non-destructive spectroscopy methods with high spatial resolution are reliable to probe the carrier concentration of doped GaN single crystals. • Getting the carrier concentrations and mobility of GaN with different concentration (1016-1018) by Raman and infrared reflectance spectroscopy. • Verifying the reliability of spectroscopy methods in testing carrier concentration of bulk GaN with different doping types. • Discussing possible reasons for the different mobility obtained by Hall, Raman and infrared reflectance measurements. [ABSTRACT FROM AUTHOR]