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333 results on '"She, Juncong"'

2. Resonant Photon-Exciton Coupling in All-Semiconductor Heterostructures Composed of Silicon Nanosphere and Monolayer WS2

Author

Wang, Hao, Wen, Jinxiu, Liu, Pu, Yan, Jiahao, Zhang, Yu, Liu, Fei, She, Juncong, Chen, Jun, Chen, Huanjun, Deng, Shaozhi, and Xu, Ningsheng

Subjects
Physics - Optics
Abstract

Tailoring and enhancing the interaction between light and matter is of great importance for both fundamental researches and future photonic and optoelectronic applications. Due to their high exciton oscillator strength and large exciton binding energy, two-dimensional atomic semiconducting transition metal dichalcogenides have recently emerged as an excellent platform for the strong photon-exciton interaction by integrating with optically resonant cavities. Here, we propose an all-semiconductor system composed of individual silicon nanospheres and monolayer WS2 and investigate the resonance coupling between these two constituents. By coating the silicon nanospheres with monolayer WS2, we demonstrate the strong resonance coupling between the magnetic dipole mode and A-exciton, evidenced by an anticrossing behavior in the scattering energy diagram with a Rabi splitting of 77 meV. Compared with the plasmonic analogues, the resonance coupling in all-semiconductor heterostructure is much stronger and less sensitive to the spacing between the silicon nanosphere core and WS2 shell. When the silicon nanospheres are placed onto the WS2 monolayer with a point contact, resonance coupling manifested by the quenching dips in the scattering spectra can also be observed at ambient conditions, which involves only a few excitons. Finally, resonance coupling in the all-semiconductor heterostructure can be active controlled by temperature scanning. Our findings suggest that this all-semiconductor heterostructure can be exploited for future on-chip nanophotonics associated with strong light-matter interactions.

Published
2017

3. Room-temperature vacuum Rabi splitting with active control in two-dimensional atomic crystals

Author

Wen, Jinxiu, Wang, Hao, Wang, Weiliang, Deng, Zexiang, Zhuang, Chao, Zhang, Yu, Liu, Fei, She, Juncong, Chen, Jun, Chen, Huanjun, Deng, Shaozhi, and Xu, Ningsheng

Subjects
Physics - Optics, Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

Strong light-matter coupling manifested by vacuum Rabi splitting has attracted tremendous attention due to its fundamental importance in cavity quantum-electrodynamics research and great potentials in quantum information applications. A prerequisite for practical applications of the strong coupling in future quantum information processing and coherent manipulation is an all-solid-state system exhibiting room-temperature vacuum Rabi splitting with active control. Here we realized such a system in heterostructure consisting of monolayer WS2 and an individual plasmonic gold nanorod. By taking advantage of both of the small mode volume of the nanorod and large binding energy of the WS2 exciton, giant vacuum Rabi splitting energies of 91 meV ~ 133 meV can be obtained at ambient conditions, which only involve 5 ~ 18 excitons. The vacuum Rabi splitting can be dynamically tuned either by electrostatic gating or temperature scanning. These findings could pave the way towards active quantum optic devices operating at room temperature.

Published
2017

7. Field Evaporation of Grounded Arsenic Doped Silicon Clusters

Author

Deng, Zexiang, She, Juncong, Li, Zhibing, and Wang, Weiliang

Subjects
Physics - Computational Physics, Condensed Matter - Materials Science
Abstract

We have investigated field evaporation of grounded arsenic (As) doped silicon (Si) clusters consist of 52 atoms with density functional theory to mimic Si nano structures of hundreds of nanometers long standing on a substrate. Six cluster structures with different As doping concentrations and dopant locations are studied. The critical evaporation electric fields are found to be lower for clusters with higher doping concentrations and doping sites closer to the surface. We attribute the difference to the difference in binding energies corresponding to the different As-doping concentrations and to the doping locations. Our theoretical study could shed light on the stability of nano apexs under high electric field.

Published
2014
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9. Uniform Current Supply in Gated p-Type Si-Tips for Achieving High-Performance Field Electron Emitter Array

Author

Chen, Yang, Huang, Yifeng, Wei, Yiman, Deng, Shaozhi, Xu, Ningsheng, Chen, Jun, and She, Juncong

Abstract

The field electron emission current from the gated p-type Si-tips is supplied from the generation current in the substrate depletion. Herein, an inversion electron diffusion model coupled with generation electron injection was established to describe the current supplied for p-type Si-tip array, which is further calculated using finite element simulation. It was found that the inequivalence of geometric position of the tips in the gate pad induces nonuniform current supply. Typically, in a square array, the current supplied for the tips at the out-edge and especially the corner of the array is much higher than that of the tips inside. A narrower tip-to-tip separation results in a poorer current supply uniformity. A ring array, in which the tips are in equivalent position that with uniform current supply, was proposed. Gated p-type Si-tip array in square ( $20\times 20$ ) and ring (400 tips) arrangement was fabricated and characterized, respectively. The ring array achieves a high emission current ( $389~\mu $ A at 182.6 V and $\sim 1~\mu $ A/tip in average) and uniform ring-shape emission sites. However, the square array showed a lower emission current ( $64~\mu $ A at 180 V) and nonuniform emission, which is well consistent to the simulation results. The uniform electron supply in the ring array ensures the tips to uniformly contribute for a high-current emission.

Published
2024
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19. Split-Channel Dual-Gate High Voltage Thin Film Transistors

Author

Kong, Jiaquan, Li, Xiaojie, Liu, Chuan, Ou, Hai, She, Juncong, Deng, Shaozhi, and Chen, Jun

Abstract

High-voltage thin film transistors (HVTFTs) have potential applications for driving high-voltage devices. Drain offset is a typical HVTFT structure but degrades ON-current. In this study, a-IGZO split-channel dual-gate HVTFTs are explored to achieve both high-voltage and high breakdown voltage. It is found that the dual-gate structure without split-channel improves the ON-current of offset-drain thin film transistors (TFTs) but degrades the breakdown voltage. Experiment results show that high ON-current induced thermal breakdown is the main reason limiting the breakdown voltage of dual-gate HVTFTs. The split-channel structure is introduced to enhance the heat dissipation and thus dual-gate HVTFTs with higher breakdown voltage were obtained. Split-channel dual-gate HVTFTs were fabricated with a breakdown voltage of 464 V, ON-current of $61.60~\mu \text{A}$ , threshold voltage of −1.0 V, and subthreshold swing of 0.38 V/dec. This study demonstrates that split-channel dual-gate HVTFTs are a promising candidate for high-voltage and high ON-current TFT.

Published
2024
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20. Plasma Treatment for Achieving Oxygen Substitution in Layered MoS2and the Room-Temperature Mid-Infrared (10 μm) Photoresponse

Author

Wu, Jiahao, Li, Shasha, Wang, Ximiao, Huang, Yuan, Huang, Yifeng, Chen, Huanjun, Chen, Jun, She, Juncong, and Deng, Shaozhi

Abstract

Highly sensitive photodetectors in the mid-infrared (MIR, 3–15 μm) are highly desired in a growing number of applications. However, only a handful of narrow-band-gap semiconductors are suitable for this purpose, most of which require cryogenic cooling to increase the signal-to-noise ratio. The realization of high-performance MIR photodetectors operating at room temperature remains a challenge. Herein, we report on plasma-treated few-layer MoS2for room-temperature MIR (10 μm) photodetection. Oxygen plasma treatment, which is a mature microfabrication process, is employed. The ion kinetic energy of oxygen plasma is adjusted to 70–130 eV. A photoresponsivity of 0.042 mA/W and a detectivity of 1.57 × 107Jones are obtained under MIR light (10 μm) illumination with an average power density of 114.6 mW/cm2. The photoresponse is attributed to the introduction of electronic states in the band gap of MoS2through oxygen substitution. A graphene/plasma-treated MoS2/graphene device is further demonstrated to shorten the active channel while maintaining the illumination area. The photoresponsivity and detectivity are largely boosted to 1.8 A/W and 2.64 × 109Jones, respectively. The excellent detective performance of the graphene/plasma-treated MoS2/graphene device is further demonstrated in single-detector MIR (10 μm) scanning imaging. This work offers a facile approach to constructing integrated MoS2-based MIR photodetectors.

Published
2023
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36. High Responsivity Vacuum Nano-Photodiode Using Single-Crystal CsPbBr 3 Micro-Sheet.

Author

Zeng, Xiangjun, Li, Shasha, Liu, Zairan, Chen, Yang, Chen, Jun, Deng, Shaozhi, Liu, Fei, and She, Juncong

Subjects
ELECTRON field emission, PHOTOELECTRICITY, ELECTRON tunneling, ELECTRIC potential, ELECTROSTATIC fields, ELECTRON transport, SILICON nanowires
Abstract

Field electron emission vacuum photodiode is promising for converting free-space electromagnetic radiation into electronic signal within an ultrafast timescale due to the ballistic electron transport in its vacuum channel. However, the low photoelectric conversion efficiency still hinders the popularity of vacuum photodiode. Here, we report an on-chip integrated vacuum nano-photodiode constructed from a Si-tip anode and a single-crystal CsPbBr3 cathode with a nano-separation of ~30 nm. Benefiting from the nanoscale vacuum channel and the high surface work function of the CsPbBr3 (4.55 eV), the vacuum nano-photodiode exhibits a low driving voltage of 15 V with an ultra-low dark current (50 pA). The vacuum nano-photodiode demonstrates a high photo responsivity (1.75 AW−1@15 V) under the illumination of a 532-nm laser light. The estimated external quantum efficiency is up to 400%. The electrostatic field simulation indicates that the CsPbBr3 cathode can be totally depleted at an optimal thickness. The large built-in electric field in the depletion region facilitates the dissociation of photoexcited electron–hole pairs, leading to an enhanced photoelectric conversion efficiency. Moreover, the voltage drop in the vacuum channel increases due to the photoconductive effect, which is beneficial to the narrowing of the vacuum barrier for more efficient electron tunneling. This device shows great promise for the development of highly sensitive perovskite-based vacuum opto-electronics. [ABSTRACT FROM AUTHOR]

Published
2022
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45. Forschungsbericht 2017

Author

Weber, Karsten, Dendorfer, Sebastian, Süß, Franz, Kubowitsch, Simone, Schratzenstaller, Thomas, Haug, Sonja, Mohr, Christa, Kiesl, Hans, Drechsler, Jörg, Westner, Markus, Kobus, Jörn, Schubert, Martin, Zenger, Stefan, Pietsch, Alexander, Weiß, Josef, Hinterseer, Sebastian, Schieck, Roland, Scherzinger, Stefanie, Klettke, Meike, Ringlstetter, Andreas, Störl, Uta, Bissyandé, Tegawendé F., Seeburger, Achim, Schindler, Timo, Ramsauer, Ralf, Kiszka, Jan, Kölbl, Andreas, Lohmann, Daniel, Mauerer, Wolfgang, Maier, Johannes, Scorna, Ulrike, Palm, Christoph, Soska, Alexander, Mottok, Jürgen, Ellermeier, Andreas, Vögele, Daniel, Hierl, Stefan, Briem, Ulrich, Buschmann, Knut, Ehrlich, Ingo, Pongratz, Christian, Pielmeier, Benjamin, Tyroller, Quirin, Monkman, Gareth J., Gut, Franz, Roth, Carina, Hausler, Peter, Bierl, Rudolf, Prommesberger, Christian, Lawrowski, Robert, Langer, Christoph, Schreiner, Rupert, Huang, Yifeng, She, Juncong, Ottl, Andreas, Rieger, Walter, Kraml, Agnes, Poxleitner, Thomas, Hofer, Simon, Heisterkamp, Benjamin, Lerch, Maximilian, Sammer, Nike, Golde, Olivia, Wellnitz, Felix, Schmid, Sandra, Muntschick, Claudia, Kusterle, Wolfgang, Paric, Ivan, Brückl, Oliver, Haslbeck, Matthias, Schmidt, Ottfried, Schwanzer, Peter, Rabl, Hans-Peter, Sterner, Michael, Bauer, Franz, Steinmann, Sven, Eckert, Fabian, Hofrichter, Andreas, and Ostbayerische Technische Hochschule Regensburg

Published
2021
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