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Encoding quantum information within bosonic modes offers a promising direction for hardware-efficient and fault-tolerant quantum information processing. However, achieving high-fidelity universal control over the bosonic degree of freedom using native photonic hardware remains a challenge. Here, we propose an architecture to prepare and perform logical quantum operations on arbitrary multimode multi-photon states using a quantum photonic neural network. Central to our approach is the optical nonlinearity, which is realized through strong light-matter interaction with a three-level Lambda atomic system. The dynamics of this interaction are confined to the single-mode subspace, enabling the construction of high-fidelity quantum gates. This nonlinearity functions as a photon-number selective phase gate, which facilitates the construction of a universal gate set and serves as the element-wise activation function in our neural network architecture. Through numerical simulations, we demonstrate the versatility of our approach by executing tasks that are key to logical quantum information processing. The network is able to deterministically prepare a wide array of multimode multi-photon states, including essential resource states. We also show that the architecture is capable of encoding and performing logical operations on bosonic error-correcting codes. Additionally, by adapting components of our architecture, error-correcting circuits can be built to protect bosonic codes. The proposed architecture paves the way for near-term quantum photonic processors that enable error-corrected quantum computation, and can be achieved using present-day integrated photonic hardware., Comment: 21 pages including supplement, 12 figures total

Telecom C-band single photons exhibit the lowest attenuation in optical fibers, enabling long-haul quantum-secured communication. However, efficient coupling with optical fibers is crucial for these single photons to be effective carriers in long-distance transmission. In this work, we demonstrate an efficient fiber-coupled single photon source at the telecom C-band using InAs/InP quantum dots coupled to a tapered nanobeam. The tapered nanobeam structure facilitates directional emission that is mode-matched to a lensed fiber, resulting in a collection efficiency of up to 65% from the nanobeam to a single-mode fiber. Using this approach, we demonstrate single photon count rates of 575 $\pm$ 5 Kcps and a single photon purity of $g^2$ (0) = 0.015 $\pm$ 0.003. Additionally, we demonstrate Hong-Ou Mandel interference from the emitted photons with a visibility of 0.84 $\pm$ 0.06. From these measurements, we determine a photon coherence time of 450 $\pm$ 20 ps, a factor of just 8.3 away from the lifetime limit. This work represents an important step towards the development of telecom C-band single-photon sources emitting bright, pure, and indistinguishable photons, which are necessary to realize fiber-based long-distance quantum networks

Non-Hermitian models describe the physics of ubiquitous open systems with gain and loss. One intriguing aspect of non-Hermitian models is their inherent topology that can produce intriguing boundary phenomena like resilient higher-order topological insulators (HOTIs) and non-Hermitian skin effects (NHSE). Recently, time-multiplexed lattices in synthetic dimensions have emerged as a versatile platform for the investigation of these effects free of geometric restrictions. Despite holding broad applications, studies of these effects have been limited to static cases so far, and full dynamical control over the non-Hermitian effects has remained elusive. Here, we demonstrate the emergence of topological non-Hermitian corner states with remarkable temporal controllability and robustness in a two-dimensional photonic synthetic time lattice. Specifically, we showcase various dynamic control mechanisms for light confinement and flow, including spatial mode tapering, sequential non-Hermiticity on-off switching, dynamical corner state relocation, and light steering. Moreover, we establish the corner state's robustness in the presence of intensity modulation randomness and quantitatively determine its breakdown regime. Our findings extend non-Hermitian and topological photonic effects into higher synthetic dimensions, offering remarkable flexibility and real-time control possibilities. This opens avenues for topological classification, quantum walk simulations of many-body dynamics, and robust Floquet engineering, free from the limitations of physical geometries.

On-chip optical filters are fundamental components in optical signal processing. While rare-earth ion-doped crystals offer ultra-narrow optical filtering via spectral hole burning, their applications have primarily been limited to those using bulk crystals, restricting their utility. In this work, we demonstrate cavity-enhanced spectral filtering based on rare-earth ions in an integrated nonlinear optical platform. We incorporate rare-earth ions into high quality-factor ring resonators patterned in thin-film lithium niobate. By spectral hole burning at 4K in a critically coupled resonance mode, we achieve bandpass filters ranging from 7 MHz linewidth, with 13.0 dB of extinction, to 24 MHz linewidth, with 20.4 dB of extinction. By reducing the temperature to 100 mK to eliminate phonon broadening, we achieve an even narrower linewidth of 681 kHz, which is comparable to the narrowest filter linewidth demonstrated in an integrated photonic device, while only requiring a small device footprint. Moreover, the cavity enables reconfigurable filtering by varying the cavity coupling rate. For instance, as opposed to the bandpass filter, we demonstrate a bandstop filter utilizing an under-coupled ring resonator. Such versatile integrated spectral filters with high extinction ratio and narrow linewidth could serve as fundamental components for optical signal processing and optical memories on-a-chip.

Halide perovskite semiconductors have emerged as promising materials for the development of solution-processed, scalable, high performance optoelectronic devices such as light-emitting diodes (LEDs) as well as coherent single photon emitters. Their integration to nanophotonic cavities for radiative enhancement and strong nonlinearity is underexplored. In this work, we demonstrate cavity-enhanced emission and saturable absorption using colloidal CsPbBr$_3$ perovskite quantum dots coupled to a high-Q cavity mode of a circular Bragg grating structure designed to facilitate integration of solution-processed materials . We achieve an order of magnitude increase in brightness and 8-fold increase in the spontaneous emission rate for the cavity-coupled emitters. This result indicates the possibility of achieving transform-limited photon coherence for the halide perovskites at cryogenic temperatures. We also observe saturable absorption of the emitters through intensity-dependent cavity quality factor. These results pave the way towards achieving improved photon indistinguishability and strong optical nonlinearities for cavity coupled perovskite systems., Comment: 10 pages, 4 figures

Photonic crystal nanobeam cavities are valued for their small mode volume, CMOS compatibility, and high coupling efficiency crucial features for various low-power photonic applications and quantum information processing. However, despite their potential, nanobeam cavities often suffer from low quality factors due to fabrication imperfections that create surface states and optical absorption. In this work, we demonstrate InP nanobeam cavities with up to 140% higher quality factors by applying a coating of Al$_2$O$_3$ via atomic layer deposition to terminate dangling bonds and reduce surface absorption. Additionally, changing the deposition thickness allows precise tuning of the cavity mode wavelength without compromising the quality factor. This Al$_2$O$_3$ atomic layer deposition approach holds great promise for optimizing nanobeam cavities that are well-suited for integration with a wide range of photonic applications.

A future quantum internet is expected to generate, distribute, store and process quantum bits (qubits) over the globe by linking different quantum nodes via quantum states of light. To facilitate the long-haul operations, quantum repeaters, the building blocks for a long-distance quantum network, have to be operated in the telecom wavelengths to take advantage of both the low-loss fiber network and the well-established technologies for optical communications. Semiconductors quantum dots (QDs) so far have exhibited exceptional performances as key elements, i.e., quantum light sources and spin-photon interfaces, for quantum repeaters, but only in the near-infrared (NIR) regime. Therefore, the development of high-performance telecom-band QD devices is highly desirable for a future solid-state quantum internet based on fiber networks. In this review, we present the physics and the technological developments towards epitaxial QD devices emitting at the telecom O- and C-bands for quantum networks by using advanced epitaxial growth for direct telecom emission, and quantum frequency conversion (QFC) for telecom-band down-conversion. We also discuss the challenges and opportunities in the future to realize telecom QD devices with improved performances and expanded functionalities by taking advantage of hybrid integrations., Comment: Final version to appear in Nature Nano

Silicon T centers present the promising possibility to generate optically active spin qubits in an all-silicon device. However, these color centers exhibit long excited state lifetimes and a low Debye-Waller factor, making them dim emitters with low efficiency into the zero-phonon line. Nanophotonic cavities can solve this problem by enhancing radiative emission into the zero-phonon line through the Purcell effect. In this work we demonstrate cavity-enhanced emission from a single T center in a nanophotonic cavity. We achieve a two-orders of magnitude increase in brightness of the zero-phonon line relative to waveguide-coupled emitters, a 23% collection efficiency from emitter to fiber, and an overall emission efficiency into the zero-phonon line of 63.4%. We also observe a lifetime enhancement of 5, corresponding to a Purcell factor exceeding 18 when correcting for the emission to the phonon sideband. These results pave the way towards efficient spin-photon interfaces in silicon photonics., Comment: References updated

Impurity-bound excitons in ZnSe quantum wells are bright single photon emitters--a crucial element in photonics-based quantum technology. But to achieve the efficiencies required for practical applications, these emitters must be integrated into optical cavities that enhance their radiative properties and far-field emission pattern. In this work, we demonstrate cavity-enhanced emission from a single impurity-bound exciton in a ZnSe quantum well. We utilize a bullseye cavity structure optimized to feature a small mode volume and a nearly Gaussian far-field transverse mode that can efficiently couple to an optical fiber. The fabricated device displays emission that is more than an order of magnitude brighter than bulk impurity-bound exciton emitters in the ZnSe quantum well, as-well-as clear anti-bunching, which verifies the single photon emission from the source. Time-resolved photoluminescence spectroscopy reveals a Purcell-enhanced radiative decay process with a Purcell factor of 1.43. This work paves the way towards high efficiency spin-photon interfaces using an impurity-doped II-VI semiconductor coupled to nanophotonics.

Color centers in Si could serve as both efficient quantum emitters and quantum memories with long coherence times in an all-silicon platform. Of the various known color centers, the T center holds particular promise because it possesses a spin ground state that has long coherence times. But this color center exhibits a long excited state lifetime which results in a low photon emission rate, requiring methods to extract photon emission with high efficiency. We demonstrate high-efficiency single photon emission from a single T center using a nanobeam. The nanobeam efficiently radiates light in a mode that is well-matched to a lensed fiber, enabling us to collect over 70% of the T center emission directly into a single mode fiber. This efficiency enables us to directly demonstrate single photon emission from the zero phonon line, which represents the coherent emission from the T center. Our results represent an important step towards silicon-integrated spin-photon interfaces for quantum computing and quantum networks., Comment: 9 pages, 4 figures

Controlling large-scale many-body quantum systems at the level of single photons and single atomic systems is a central goal in quantum information science and technology. Intensive research and development has propelled foundry-based silicon-on-insulator photonic integrated circuits to a leading platform for large-scale optical control with individual mode programmability. However, integrating atomic quantum systems with single-emitter tunability remains an open challenge. Here, we overcome this barrier through the hybrid integration of multiple InAs/InP microchiplets containing high-brightness infrared semiconductor quantum dot single photon emitters into advanced silicon-on-insulator photonic integrated circuits fabricated in a 300~mm foundry process. With this platform, we achieve single photon emission via resonance fluorescence and scalable emission wavelength tunability through an electrically controlled non-volatile memory. The combined control of photonic and quantum systems opens the door to programmable quantum information processors manufactured in leading semiconductor foundries., Comment: 9 pages, 4 figures

Trapped ions are one of the leading candidates for scalable and long-distance quantum networks because of their long qubit coherence time, high fidelity single- and two-qubit gates, and their ability to generate photons entangled with the qubit state of the ion. One method for creating ion-photon entanglement is to exploit optically transitions from the P_(1/2) to S_(1/2) levels, which naturally emit spin-photon entangled states. But these optical transitions typically lie in the ultra-violet and visible wavelength regimes. These wavelengths exhibit significant fiber-optic propagation loss, thereby limiting the transfer of quantum information to tens of meters. Quantum frequency conversion is essential to convert these photons to telecom wavelengths so that they can propagate over long distances in fiber-based networks, as well as for compatibility with the vast number of telecom-based opto-electronic components. Here, we generate O-band telecom photons via a low noise quantum frequency conversion scheme from photons emitted from the P_(1/2) to S_(1/2) dipole transition of a trapped barium ion. We use a two-stage quantum frequency conversion scheme to achieve a frequency shift of 375.4 THz between the input visible photon and the output telecom photon achieving a conversion efficiency of 11%. We attain a signal-to-background ratio of over 100 for the converted O-band telecom photon with background noise less than 15 counts/sec. These results are an important step toward achieving trapped ion quantum networks over long distances for distributed quantum computing and quantum communication.

Directing indistinguishable photons from one input port into separate output ports is a fundamental operation in quantum information processing. The simplest scheme for achieving routing beyond random chance uses the photon blockade effect of a two-level emitter. But this approach is limited by a time-energy uncertainty relation. We show that a linear optical unitary transformation applied after the atom enables splitting efficiencies that exceed this time-energy limit. We show that the linear optical unitary improves the splitting efficiency from 67\% to 82\% for unentangled photon inputs, and from 77\% to 90\% for entangled photon inputs. We then optimize the temporal mode profile of the entangled photon wavefunction to attain the optimal splitting efficiency of 92\%, a significant improvement over previous limits derived using a two-level atom alone. These results provide a path towards optimizing single photon nonlinearities and engineering programmable and robust photon-photon interactions for practical, high-fidelity quantum operations., Comment: 14 pages (including appendix), 4 figures

The heterogeneous integration of silicon with III-V materials provides a way to overcome silicon's limited optical properties toward a broad range of photonic applications. Hybrid modes are a promising way to make heterogeneous Si/III-V devices, but it is still unclear how to engineer these modes to make photonic crystal cavities. Herein, using 3D finite-difference time-domain simulation, a hybrid Si-GaAs photonic crystal cavity design enables cavity mode confinement in GaAs without directly patterning that operates at telecom wavelengths. The hybrid cavity consists of a patterned silicon waveguide nanobeam that is evanescently coupled to a GaAs slab with quantum dots. We show that by engineering the hybrid modes, we can control the degree of coupling to the active material, which leads to a tradeoff between cavity quality factor and optical gain and nonlinearity. With this design, we demonstrate a cavity mode in the Si-GaAs heterogeneous region, which enables strong interaction with the quantum dots in the GaAs slab for applications such as low-power-threshold lasing and optical bistability (156 nW and 18.1 ${\mu}$W, respectively). This heterogeneous integration of an active III-V material with silicon via a hybrid cavity design suggests a promising approach for achieving on-chip light generation and low-power nonlinear platforms.

Trapped ions are promising candidates for nodes of a scalable quantum network due to their long-lived qubit coherence times and high-fidelity single and two-qubit gates. Future quantum networks based on trapped ions will require a scalable way to route photons between different nodes. Photonic integrated circuits from fabrication foundries provide a compact solution to this problem. However, these circuits typically operate at telecommunication wavelengths which are incompatible with the strong dipole emissions of trapped ions. In this work, we demonstrate the routing of single photons from a trapped ion using a photonic integrated circuit. We employ quantum frequency conversion to match the emission of the ion to the operating wavelength of a foundry-fabricated silicon nitride photonic integrated circuit, achieving a total transmission of 31$\pm$0.9% through the device. Using programmable phase shifters, we switch the single photons between the output channels of the circuit and also demonstrate a 50/50 beam splitting condition. These results constitute an important step towards programmable routing and entanglement distribution in large-scale quantum networks and distributed quantum computers.

Radiative cascades emit correlated photon pairs, providing a pathway for the generation of entangled photons. The realization of a radiative cascade with impurity atoms in semiconductors, a leading platform for the generation of quantum light, would therefore provide a new avenue for the development of entangled photon pair sources. Here we demonstrate a radiative cascade from the decay of a biexciton at an impurity-atom complex in a ZnSe quantum well. The emitted photons show clear temporal correlations revealing the time--ordering of the cascade. Our result establishes impurity atoms in ZnSe as a potential platform for photonic quantum technologies using radiative cascades., Comment: 5 pages, 4 figures

Defects in wide-bandgap semiconductors are promising qubit candidates for quantum communication and computation. Epitaxially grown II-VI semiconductors are particularly promising host materials due to their direct bandgap and potential for isotopic purification to a spin-zero nuclear background. Here, we show a new type of single photon emitter with potential electron spin qubit based on Cl impurities in ZnSe. We utilize a quantum well to increase the binding energies of donor emission and confirm single photon emission with short radiative lifetimes of 192 ps. Furthermore, we verify that the ground state of the Cl donor complex contains a single electron by observing two-electron satellite emission, leaving the electron in higher orbital states. We also characterize the Zeeman splitting of the exciton transition by performing polarization-resolved magnetic spectroscopy on single emitters. Our results suggest single Cl impurities are suitable as single photon source with potential photonic interface., Comment: 7 pages, 6 figures

Incorporating solid-state quantum emitters into optical fiber networks enables the long-distance transmission of quantum information and the remote connection of distributed quantum nodes. However, interfacing quantum emitters with fiber optics encounters several challenges, including low coupling efficiency and stability. Here, we demonstrate a highly efficient fiber-interfacing photonic device that directly launches single photons from quantum dots into a standard FC/PC-connectorized single-mode fiber (SMF28). Optimally designed photonic structures based on hole gratings produce an ultra-narrow directional beam that matches the small numerical aperture of a single-mode fiber. A pick-and-place technique selectively integrates a single miniaturized device into the core of the fiber. Our approach realizes a plug-and-play single-photon device that does not require any optical alignment and thus guarantees long-term stability. The results thus represent a major step toward practical and reliable quantum lights across a fiber network., Comment: 19 pages, 10 figures including supporting information

Photonics provide an efficient way to implement quantum walks, the quantum analogue of classical random walk that demonstrates rich physics with potential applications. However, most photonic quantum walks do not involve photon interactions, which limits their potential to explore strongly-correlated many-body physics of light. We propose a strongly interacting discrete-time photonic quantum walk using a network of single atom beamsplitters. We calculate output statistics of the quantum walk for the case of two photons, which reveals the strongly-correlated transport of photons. Particularly, the walk can exhibit either boson-like or fermion-like statistics which is tunable by post-selecting the two-photon detection time interval. Also, the walk can sort different types of two-photon bound states into distinct pairs of output ports under certain conditions. These unique phenomena show that our quantum walk is an intriguing platform to explore strongly-correlated quantum many-body states of light. Finally, we propose an experimental realization based on time-multiplexed synthetic dimensions.

Photon-photon interactions are an essential requirement of quantum photonic information processing. One way to generate these interactions is to utilize an atom strongly coupled to an optical cavity. This system exhibits the photon blockade effect which enables single photon switching and creation of non-classical light. But the nonlinear effects enabled by this system suffer from a fundamental time-bandwidth constraint. For the the simple case of splitting an input pulse of two indistinguishable photons, this constraint imposes a limit on the efficiency of routing photons to different output ports. We show that this limit can be exceeded by combining the strongly-coupled atom with linear optics. By optimizing the unitary of the linear optical transformation, we achieve improved splitting efficiency for both un-entangled and entangled photons. Our results suggest that it may be possible to improve the efficiency of nonlinear optical processes at the single photon level by making suitable use of linear optics. These results could have implications for quantum information processing with photons.

We propose a quantum Fourier transform on photons in which a single atom-coupled cavity system mediates the photon-photon interactions. Our protocol utilizes time-delay feedback of photons and requires no active feedforward control. The time-delay feedback enables a single atom-cavity system to implement a quantum Fourier transform on an arbitrary number of photonic qubits on-the-fly, while rapid tuning of the atomic transition implements arbitrary controlled-phase gates. We analyze the performance of the protocol numerically and show that it can implement quantum Fourier transforms with tens of photons using state-of-the-art cavity quantum electrodynamics., Comment: 8 pages, 5 figures

Optically-active spin systems coupled to photonic cavities with high cooperativity can generate strong light-matter interactions, a key ingredient in quantum networks. But obtaining high cooperativities for quantum information processing often involves the use of photonic crystal cavities that feature a poor optical access from the free space, especially to circularly polarized light required for the coherent control of the spin. Here, we demonstrate coupling with cooperativity as high as $8$ of an InAs/GaAs quantum dot to a fabricated bullseye cavity that provides nearly degenerate and Gaussian polarization modes for efficient optical accessing. We observe spontaneous emission lifetimes of the quantum dot as short as $80$ ps (a $\approx 15$ Purcell enhancement) and a $\approx 80\%$ transparency of light reflected from the cavity. Leveraging the induced transparency for photon switching while coherently controlling the quantum dot spin could contribute to ongoing efforts of establishing quantum networks.

Atomic frequency combs memories that coherently store optical signals are a key building block for optical quantum computers and quantum networks. Integrating such memories into compact and chip-scale devices is essential for scalable quantum technology, but to date most demonstrations have been in bulk materials or waveguides with large cross-sections, or using fabrication techniques not easily adaptable to wafer scale processing. We demonstrate compact chip-integrated atomic frequency comb storage in rare earth doped thin-film lithium niobate. Our optical memory exhibits a broad storage bandwidth exceeding 100 MHz, and optical storage time of over 250 ns. The enhanced optical confinement in this device structure enables three orders of magnitude reduction in optical power as compared to large ion-diffused waveguides for the same Rabi frequency. These compact atomic frequency comb memories pave the way towards scalable, highly efficient, electro-optically tunable quantum photonic systems that can store and manipulate light on a compact chip.

We study the problem of measuring errors in non-trace-preserving quantum operations, with a focus on their impact on quantum computing. We propose an error metric that efficiently provides an upper bound on the trace distance between the normalized output states from imperfect and ideal operations, while remaining compatible with the diamond distance. As a demonstration of its application, we apply our metric in the analysis of a lossy beam splitter and a nondeterministic conditional sign-flip gate, two primary non-trace-preserving operations in the Knill-Laflamme-Milburn protocol. We then turn to the leakage errors of neutral-atom quantum computers, finding that these errors scale worse than previously anticipated, implying a more stringent fault-tolerant threshold. We also assess the quantum Zeno gate's error using our metric. In a broader context, we discuss the potential of our metric to analyze general postselected protocols, where it can be employed to study error propagation and estimate thresholds in fault-tolerant quantum computing. The results highlight the critical role of our proposed error metric in understanding and addressing challenges in practical quantum information processing., Comment: 18 pages, 4 figures

Noise spectroscopy elucidates the fundamental noise sources in spin systems, thereby serving as an essential tool toward developing spin qubits with long coherence times for quantum information processing, communication, and sensing. But existing techniques for noise spectroscopy that rely on microwave fields become infeasible when the microwave power is too weak to generate Rabi rotations of the spin. Here, we demonstrate an alternative all-optical approach to performing noise spectroscopy. Our approach utilizes coherent Raman rotations of the spin state with controlled timing and phase to implement Carr-Purcell-Meiboom-Gill pulse sequences. Analyzing the spin dynamics under these sequences enables us to extract the noise spectrum of a dense ensemble of nuclear spins interacting with a single spin in a quantum dot, which has thus far only been modeled theoretically. By providing spectral bandwidths of over 100 MHz, our approach enables the studies of spin dynamics and decoherence for a broad range of solid-state spin qubits.

Ultrathin optical limiters are needed to protect light sensitive components in miniaturized optical systems. However, it has proven challenging to achieve a sufficiently low optical limiting threshold. In this work, we theoretically show that an ultrathin optical limiter with low threshold intensity can be realized using a nonlinear zone plate. The zone plate is embedded with nonlinear saturable absorbing materials that allow the device to focus low intensity light, while high intensity light is transmitted as a plane wave without a focal spot. Based on this proposed mechanism, we use the finite-difference time-domain method to computationally design a zone plate embedded with InAs quantum dots as the saturable absorbing material. The device has a thickness of just 0.5 $\mu m$ and exhibits good optical limiting behavior with a threshold intensity as low as 0.45 kW/$cm^2$, which is several orders of magnitude lower than current ultrathin flat-optics-based optical limiters. This design can be optimized for different operating wavelengths and threshold intensities by using different saturable absorbing materials. Additionally, the diameter and focal length of the nonlinear zone plate can be easily adjusted to fit different systems and applications. Due to its flexible design, low power threshold, and ultrathin thickness, this optical limiting concept may be promising for application in miniaturized optical systems.

Trapped ions form an advanced technology platform for quantum information processing with long qubit coherence times, high-fidelity quantum logic gates, optically active qubits, and a potential to scale up in size while preserving a high level of connectivity between qubits. These traits make them attractive not only for quantum computing but also for quantum networking. Dedicated, special-purpose trapped-ion processors in conjunction with suitable interconnecting hardware can be used to form quantum repeaters that enable high-rate quantum communications between distant trapped-ion quantum computers in a network. In this regard, hybrid traps with two distinct species of ions, where one ion species can generate ion-photon entanglement that is useful for optically interfacing with the network and the other has long memory lifetimes, useful for qubit storage, have been proposed for entanglement distribution. We consider an architecture for a repeater based on such dual-species trapped-ion systems. We propose and analyze a protocol based on spatial and temporal mode multiplexing for entanglement distribution across a line network of such repeaters. Our protocol offers enhanced rates compared to rates previously reported for such repeaters. We determine the ion resources required at the repeaters to attain the enhanced rates, and the best rates attainable when constraints are placed on the number of repeaters and the number of ions per repeater. Our results bolster the case for near-term trapped-ion systems as quantum repeaters for long-distance quantum communications., Comment: Published in Physical Review A

Trapped ions are excellent candidates for quantum computing and quantum networks because of their long coherence times, ability to generate entangled photons as well as high fidelity single- and two-qubit gates. To scale up trapped ion quantum computing, we need a Bell-state analyzer on a reconfigurable platform that can herald high fidelity entanglement between ions. In this work, we design a photonic Bell-state analyzer on a reconfigurable thin film lithium niobate platform for polarization-encoded qubits. We optimize the device to achieve high fidelity entanglement between two trapped ions and find >99% fidelity. The proposed device can scale up trapped ion quantum computing as well as other optically active spin qubits, such as color centers in diamond, quantum dots, and rare-earth ions.

Fiber-based quantum networks require photons at telecommunications wavelengths to interconnect qubits separated by long distances. Trapped ions are leading candidates for quantum networking with high-fidelity two-qubit gates, long coherence times, and the ability to readily emit photons entangled with the ion's internal qubit states. However, trapped ions typically emit photons at wavelengths incompatible with telecommunications fiber. Here, we demonstrate frequency conversion of visible photons, emitted from the S-P dipole transition of a trapped Ba+ ion, into the telecommunications C-band. These results are an important step towards enabling a long-distance trapped ion quantum internet.

Cluster states are useful in many quantum information processing applications. In particular, universal measurement-based quantum computation (MBQC) utilizes 2D cluster states, and topologically fault-tolerant MBQC requires cluster states with three or higher dimensions. This work proposes a protocol to deterministically generate multidimensional photonic cluster states using a single atom-cavity system and time-delay feedback. The dimensionality of the cluster state increases linearly with the number of time-delay feedback. We firstly give a diagrammatic derivation of the tensor network states, which is valuable in simulating matrix product states and projected entangled pair states generated from sequential photons. Our method also provides a simple way to bridge and analyze the experimental imperfections and the logical errors of the generated states. In this method, we analyze the generated cluster states under realistic experimental conditions and address both one-qubit and two-qubit errors. Through numerical simulation, we observe an optimal atom-cavity cooperativity for the fidelity of the generated states, which is surprising given the prevailing assumption that higher cooperativity systems are inherently better for photonic applications., Comment: 14 pages, 11 figures

Just as classical information technology rests on a foundation built of interconnected information-processing systems, quantum information technology (QIT) must do the same. A critical component of such systems is the interconnect, a device or process that allows transfer of information between disparate physical media, for example, semiconductor electronics, individual atoms, light pulses in optical fiber, or microwave fields. While interconnects have been well engineered for decades in the realm of classical information technology, quantum interconnects (QuICs) present special challenges, as they must allow the transfer of fragile quantum states between different physical parts or degrees of freedom of the system. The diversity of QIT platforms (superconducting, atomic, solid-state color center, optical, etc.) that will form a quantum internet poses additional challenges. As quantum systems scale to larger size, the quantum interconnect bottleneck is imminent, and is emerging as a grand challenge for QIT. For these reasons, it is the position of the community represented by participants of the NSF workshop on Quantum Interconnects that accelerating QuIC research is crucial for sustained development of a national quantum science and technology program. Given the diversity of QIT platforms, materials used, applications, and infrastructure required, a convergent research program including partnership between academia, industry and national laboratories is required. This document is a summary from a U.S. National Science Foundation supported workshop held on 31 October - 1 November 2019 in Alexandria, VA. Attendees were charged to identify the scientific and community needs, opportunities, and significant challenges for quantum interconnects over the next 2-5 years., Comment: This is an updated version V2, including expanded text and listing of all co-authors. To whom correspondence should be addressed: Marko Lon\v{c}ar: loncar@seas.harvard.edu; Michael G. Raymer: raymer@uoregon.edu

The goal of integrated quantum photonics is to combine components for the generation, manipulation, and detection of non-classical light in a phase stable and efficient platform. Solid-state quantum emitters have recently reached outstanding performance as single photon sources. In parallel, photonic integrated circuits have been advanced to the point that thousands of components can be controlled on a chip with high efficiency and phase stability. Consequently, researchers are now beginning to combine these leading quantum emitters and photonic integrated circuit platforms to realize the best properties of each technology. In this article, we review recent advances in integrated quantum photonics based on such hybrid systems. Although hybrid integration solves many limitations of individual platforms, it also introduces new challenges that arise from interfacing different materials. We review various issues in solid-state quantum emitters and photonic integrated circuits, the hybrid integration techniques that bridge these two systems, and methods for chip-based manipulation of photons and emitters. Finally, we discuss the remaining challenges and future prospects of on-chip quantum photonics with integrated quantum emitters., Comment: 17 pages, 9 figures

Synthetic dimensions provide a promising platform for photonic quantum simulations. Manipulating the flow of photons in these dimensions requires an electric field. However, photons do not have charge and do not directly interact with electric fields. Therefore, alternative approaches are needed to realize electric fields in photonics. One approach is to use engineered gauge fields that can mimic the effect of electric fields and produce the same dynamical behavior. Here, we demonstrate such an electric field for photons propagating in a two-dimensional synthetic space. We achieve this using a linearly time-varying gauge field generated by direction-dependent phase modulations. We show that the generated electric field leads to Bloch oscillations and the revival of the state after a certain number of steps dependent on the field strength. We measure the probability of the revival and demonstrate good agreement between the observed values and the theoretically predicted results. Furthermore, by applying a nonuniform electric field, we show the possibility of waveguiding photons. Ultimately, our results open up new opportunities for manipulating the propagation of photons with potential applications in photonic quantum simulations.

Rare-earth ion ensembles doped in single crystals are a promising materials system with widespread applications in optical signal processing, lasing, and quantum information processing. Incorporating rare-earth ions into integrated photonic devices could enable compact lasers and modulators, as well as on-chip optical quantum memories for classical and quantum optical applications. To this end, a thin film single crystalline wafer structure that is compatible with planar fabrication of integrated photonic devices would be highly desirable. However, incorporating rare-earth ions into a thin film form-factor while preserving their optical properties has proven challenging. We demonstrate an integrated photonic platform for rare-earth ions doped in a single crystalline thin film on insulator. The thin film is composed of lithium niobate doped with Tm3+. The ions in the thin film exhibit optical lifetimes identical to those measured in bulk crystals. We show narrow spectral holes in a thin film waveguide that require up to 2 orders of magnitude lower power to generate than previously reported bulk waveguides. Our results pave way for scalable on-chip lasers, optical signal processing devices, and integrated optical quantum memories.

Topological photonic structures exhibit chiral edge states that are robust to disorder and sharp bends. When coupled to quantum emitters, these edge states generate directional light emission that enables unprecedented control of interactions between light and matter in a nanophotonic device. While directional light emission in one-dimensional topological, as well as conventional, waveguides has been previously demonstrated, the extension of these concepts to resonator structures that enhance light-matter coupling remains challenging. Here we demonstrate chiral lightmatter interactions in a topological resonator. We employ valley-Hall topological edge states to realize a helical resonator at the interface of two topologically distinct regions. Such a helical resonator has two counter-propagating modes with opposite polarizations. We show chiral coupling of the resonator to a quantum emitter resulting in a Purcell enhancement of 3.4 due to resonant coupling. Such chiral resonators could enable designing complex nanophotonic circuits for quantum information processing, and studying novel quantum many-body dynamics.

Charged quantum dots containing an electron or hole spin are bright solid-state qubits suitable for quantum networks and distributed quantum computing. Incorporating such quantum dot spin into a photonic crystal cavity creates a strong spin-photon interface, in which the spin can control a photon by modulating the cavity reflection coefficient. However, previous demonstrations of such spin-photon interfaces have relied on quantum dots that are charged randomly by nearby impurities, leading to instability in the charge state, which causes poor contrast in the cavity reflectivity. Here we demonstrate a strong spin-photon interface using a quantum dot that is charged deterministically with a diode structure. By incorporating this actively charged quantum dot in a photonic crystal cavity, we achieve strong coupling between the cavity mode and the negatively charged state of the dot. Furthermore, by initializing the spin through optical pumping, we show strong spin-dependent modulation of the cavity reflectivity, corresponding to a cooperativity of 12. This spin-dependent reflectivity is important for mediating entanglement between spins using photons, as well as generating strong photon-photon interactions for applications in quantum networking and distributed quantum computing.

Chiral light-matter interactions can enable polarization to control the direction of light emission in a photonic device. Most realizations of chiral light-matter interactions require external magnetic fields to break time-reversal symmetry of the emitter. One way to eliminate this requirement is to utilize strong spin-orbit coupling present in transition metal dichalcogenides that exhibit a valley dependent polarized emission. Such interactions were previously reported using plasmonic waveguides, but these structures exhibit short propagation lengths due to loss. Chiral dielectric structures exhibit much lower loss levels and could therefore solve this problem. We demonstrate chiral light-matter interactions using spin-valley states of transition metal dichalcogenide monolayers coupled to a dielectric waveguide. We use a photonic crystal glide plane waveguide that exhibits chiral modes with high field intensity, coupled to monolayer WSe2. We show that the circularly polarized emission of the monolayer preferentially couples to one direction of the waveguide, with a directionality as high as 0.35, limited by the polarization purity of the bare monolayer emission. This system enables on-chip directional control of light and could provide new ways to control spin and valley degrees of freedom in a scalable photonic platform.

Integration of single-photon sources and detectors to silicon-based photonics opens the possibility of complex circuits for quantum information processing. In this work, we demonstrate integration of quantum dots with a silicon photonic add-drop filter for on-chip filtering and routing of telecom single photons. A silicon microdisk resonator acts as a narrow filter that transfers the quantum dot emission and filters the background over a wide wavelength range. Moreover, by tuning the quantum dot emission wavelength over the resonance of the microdisk we can control the transmission of the emitted single photons to the drop and through channels of the add-drop filter. This result is a step toward the on-chip control of single photons using silicon photonics for applications in quantum information processing, such as linear optical quantum computation and boson sampling.

Temporal multiplexing provides an efficient and scalable approach to realize a quantum random walk with photons that can exhibit topological properties. But two dimensional time-multiplexed topological quantum walks studied so far have relied on generalizations of the Su-Shreiffer-Heeger (SSH) model with no synthetic gauge field. In this work, we demonstrate a 2D topological quantum random walk where the non-trivial topology is due to the presence of a synthetic gauge field. We show that the synthetic gauge field leads to the appearance of multiple bandgaps and consequently, a spatial confinement of the random walk distribution. Moreover, we demonstrate topological edge states at an interface between domains with opposite synthetic fields. Our results expand the range of Hamiltonians that can be simulated using photonic random walks.

Fiber-coupled single photon sources are essential components of photonics-based quantum information processors. Most fiber-coupled single photon sources require careful alignment between fibers and quantum emitters. In this work, we present an alignment-free fiber-integrated single photon source based on an InAs/InP quantum dot emitting at telecom wavelengths. We designed a nanobeam containing the quantum dots attached to a fiber taper. The adiabatic tapered coupler of the nanobeam enables efficient light coupling to the fiber taper. Using a tungsten probe in a focused ion beam system, we transferred the nanobeam to the fiber taper. The observed fiber-coupled single photon emission occurs with a brightness of 1.5% and purity of 86%. This device provides a building block for fiber-optic quantum circuits that have various applications, such as quantum communication and distributed quantum computing.

InAs/InP quantum dots are excellent sources of telecom single-photon emission and are among the most promising candidates for scalable quantum photonic circuits. However, geometric differences in each quantum dot leads to slightly different emission wavelengths and hinders the possibility of generating multiple identical quantum emitters on the same chip. Stark tuning is an efficient technique to overcome this issue as it can control the emission energy of individual quantum dots through the quantum-confined Stark effect. Realizing this technique in InAs/InP quantum dots has previously been limited to shifts of less than 0.8 meV due to jumps in the emission energy because of additional charges at high electric field intensities. We demonstrate up to 5.1 meV of Stark tuning in the emission wavelength of InAs/InP quantum dots. To eliminate undesirable jumps to charged state, we use a thin oxide insulator to prevent carrier injection from the contacts, thereby significantly improves the tuning range of the Stark effect. Moreover, the single-photon nature and narrow linewidth of the quantum dot emission is preserved under a wide range of applied electric fields. Using photoluminescence intensity measurements and time-resolved lifetime spectroscopy we confirmed that this Stark tuning range is limited by carrier tunneling at high electric fields. This result is an important step toward integrating multiple identical quantum emitters at telecom wavelengths on-a-chip, which is crucial for realizing complex quantum photonic circuits for quantum information processing.

The integration of quantum emitters with integrated photonics enables complex quantum photonic circuits that are necessary for photonic implementation of quantum simulators, computers, and networks. Thin-film lithium niobate is an ideal material substrate for quantum photonics because it can tightly confine light in small waveguides and has a strong electro-optic effect that can switch and modulate single photons at low power and high speed. However, lithium niobite lacks efficient single-photon emitters, which are essential for scalable quantum photonic circuits. We demonstrate deterministic coupling of single-photon emitters with a lithium niobate photonic chip. The emitters are composed of InAs quantum dots embedded in an InP nanobeam, which we transfer to a lithium niobate waveguide with nanoscale accuracy using a pick-and place approach. An adiabatic taper transfers single photons emitted into the nanobeam to the lithium niobate waveguide with high efficiency. We verify the single photon nature of the emission using photon correlation measurements performed with an on-chip beamsplitter. Our results demonstrate an important step toward fast, reconfigurable quantum photonic circuits for quantum information processing.

Coupling single photon emitters to surface plasmons provides a versatile ground for on chip quantum photonics. However, achieving good coupling efficiency requires precise alignment of both the position and dipole orientation of the emitter relative to the plasmonic mode. We demonstrate coupling of single emitters in the 2-D semiconductor, WSe2 self-aligned with propagating surface plasmon polaritons in silver-air-silver, metal-insulator-metal waveguides. The waveguide produces strain induced defects in the monolayer which are close to the surface plasmon mode with favorable dipole orientations for optimal coupling. We measure an average enhancement in the rate of spontaneous emission by a factor of 1.89 for coupling the single defects to the plasmonic waveguide. This architecture provides an efficient way of coupling single photon emitters to propagating plasmons which is an important step towards realizing active plasmonic circuits on chip., Comment: 8 pages, 4 figures

Single-photon switches and transistors generate strong photon-photon interactions that are essential for quantum circuits and networks. However, to deterministically control an optical signal with a single photon requires strong interactions with a quantum memory, which have been lacking in a solid-state platform. We realize a single-photon switch and transistor enabled by a solid-state quantum memory. Our device consists of a semiconductor spin qubit strongly coupled to a nanophotonic cavity. The spin qubit enables a single gate photon to switch a signal field containing up to an average of 27.7 photons, with a switching time of 63 ps. Our results show that semiconductor nanophotonic devices can produce strong and controlled photon-photon interactions that could enable high-bandwidth photonic quantum information processing.

Future scalable photonic quantum information processing relies on the ability of integrating multiple interacting quantum emitters into a single chip. Quantum dots provide ideal on-chip quantum light sources. However, achieving quantum interaction between multiple quantum dots on-a-chip is a challenging task due to the randomness in their frequency and position, requiring local tuning technique and long-range quantum interaction. Here, we demonstrate quantum interactions between distant two quantum dots on a nanophotonic waveguide. We achieve a photon-mediated long-range interaction by integrating the quantum dots to the same optical mode of a nanophotonic waveguide and overcome spectral mismatch by incorporating on-chip thermal tuners. We observe their quantum interactions of the form of super-radiant emission, where the two dots collectively emit faster than each dot individually. Creating super-radiant emission from integrated quantum emitters could enable compact chip-integrated photonic structures that exhibit long-range quantum interactions. Therefore, these results represent a major step towards establishing photonic quantum information processors composed of multiple interacting quantum emitters on a semiconductor chip., Comment: 23 pages, 7 figures

Plasmonic nano-structures provides an efficient way to control and enhance the radiative properties of quantum emitters. Coupling these structures to single defects in low-dimensional materials provides a particularly promising material platform to study emitter-plasmon interactions because these emitters are not embedded in a surrounding dielectric. They can therefore approach a near-field plasmonic mode to nanoscale distances, potentially enabling strong light-matter interactions. However, this coupling requires precise alignment of the emitters to the plasmonic mode of the structures, which is particularly difficult to achieve in a site-controlled structure. We present a technique to generate quantum emitters in 2D tungsten diselenide (WSe2) coupled to site-controlled plasmonic nano-pillars. The plasmonic nano-pillars induce strain in the two dimensional material which generates quantum emitters near the high-field region of the plasmonic mode. The electric field of the nano-pillar mode lies close to parallel with the two-dimensional material, and is therefore in the correct orientation to couple to quantum emitters. Interactions between the emitter and plasmonic mode result in an enhanced spontaneous emission and increased brightness. This approach may enable bright site-controlled non-classical light sources for applications in quantum communication and optical quantum computing.

The application of topology in optics has led to a new paradigm in developing photonic devices with robust properties against disorder. Although significant progress on topological phenomena has been achieved in the classical domain, the realization of strong light-matter coupling in the quantum domain remains unexplored. We demonstrate a strong interface between single quantum emitters and topological photonic states. Our approach creates robust counter-propagating edge states at the boundary of two distinct topological photonic crystals. We demonstrate the chiral emission of a quantum emitter into these modes and establish their robustness against sharp bends. This approach may enable the development of quantum optics devices with built-in protection, with potential applications in quantum simulation and sensing.

Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of pre-characterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons., Comment: 19 Pages in total, including 8 figures