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Electrical characteristics of NOT and NAND logic circuits fabricated using top-gate ZnO nanowire field-effect transistors (FETs) with high-k Al2O3 gate layers were investigated in this study. To form a NOT logic circuit, two identical FETs whose Ion/Ioff ratios were as high as [?]108 were connected in series in a single ZnO nanowire channel, sharing a common source electrode. Its voltage transfer characteristics exhibited an inverting operation and its logic swing was 98%. In addition, the characteristics of a NAND logic circuit composed of three top-gate FETs connected in series in a single nanowire channel are discussed in this paper. [ABSTRACT FROM AUTHOR]

Transparent and flexible thin film transistors (TFTs) with channel layers composed of sintered HgTe nanocrystals were fabricated on top of UV/ozone treated plastic substrates and their electrical properties were characterized. A representative TFT with a channel layer composed of sintered HgTe nanocrystals revealed typical p-type characteristics, an on/off current ratio of [?]103 and a field-effect mobility of 4.1 cm2 V[?]1 s[?]1. When the substrate was bent until the bending radius of the substrate reached 2.4 cm, which corresponded to a strain of 0.83% that the HgTe thin film experienced, the TFT exhibited an on/off current ratio of [?]103 and a field-effect mobility of 4.0 cm2 V[?]1 s[?]1. [ABSTRACT FROM AUTHOR]

The 1.54 μm Er[sup 3+] photoluminescence excitation (PLE) and photoluminescence (PL) spectra of erbium-doped silicon-rich silicon oxide (SRSO) are investigated. Between 350 and 820 nm, PLE spectra are broad and featureless, and the PL spectra are independent of the excitation wavelengths. The results indicate that in erbium-doped SRSO, the Er[sup 3+] luminescence is dominated by a single class of Er sites with a strong coupling to all the carriers in the silicon nanograins. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]