301. Annealing process and temperature effects on silicon-vacancy and germanium-vacancy centers in CVD grown polycrystalline diamond.
- Author
-
Sedov, Vadim, Martyanov, Artem, Tiazhelov, Ivan, Boldyrev, Kirill, Nosukhin, Sergei, Kuznetsov, Mikhail, Sektarov, Eduard, Krivobok, Vladimir, Nikolaev, Sergey, Savin, Sergey, Mandal, Soumen, Saraykin, Vladimir, Voronov, Valery, and Ralchenko, Victor
- Subjects
- *
TEMPERATURE effect , *NANODIAMONDS , *ARTIFICIAL diamonds , *CHEMICAL vapor deposition , *DIAMONDS , *DIAMOND crystals , *MICROWAVE plasmas , *DOPING agents (Chemistry) - Abstract
The annealing treatment plays a crucial role in tailoring the properties of synthetic diamond materials, especially those doped with various elements in order to form specific color centers like nitrogen-vacancy (NV), silicon-vacancy (Si-V), germanium-vacancy (Ge-V), etc. This study delves into the annealing of 175 μm-thick Ge-doped polycrystalline diamond (PCD) films grown by microwave plasma-assisted chemical vapor deposition (MPCVD). Large-area PCD plate was cut into smaller equivalent 5 × 5 mm2 pieces, which were separately subjected to annealing in microwave plasma in H 2 atmosphere, to annealing in vacuum or to annealing under high-pressure high-temperature conditions (HPHT, 5.9 GPa, 2000 °C). The structure, phase composition and photoluminescence (PL) of samples before and after various annealing processes were investigated. All applied types of annealing enhance both the Si-V and Ge-V lines in PL at room temperature. Increasing annealing temperature leads to gradual decrease of full widths at half-maxima (FWHM) of diamond Raman peak (1332.5 cm−1), as well as Si-V (738 nm) and Ge-V (602 nm) PL peaks. In addition, the limitations for each type of annealing are established. The obtained results are crucial for the design of CVD-grown Ge-doped and Si-doped PCD materials that can be used for applications in photonics such as single photon sources, biomarkers, as well as for the fabrication of optical diamond thermometers. [Display omitted] • Ge-doped PCD film was grown by MPCVD and cut into series of equivalent samples. • Different samples were subjected to different types of annealing: in H 2 plasma, in vacuum, and in HPHT conditions. • The annealing resulted in lowering FWHM of Raman, XRD and PL peaks of samples. [ABSTRACT FROM AUTHOR]
- Published
- 2024
- Full Text
- View/download PDF