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The granitic pegmatites of the Tørdal area in southern Norway have been known for their Sc enrichment for about 100 years. Scandium is a compatible element in garnet. In this study, 32 garnet samples from 16 pegmatite localities across the Tørdal pegmatite field were investigated to determine the Sc distribution within garnets (crystal scale), within pegmatite bodies (pegmatite scale) and across the Tørdal pegmatite field (regional scale). In the Tørdal pegmatites, Sc content in garnet is representative for the Sc bulk composition of pegmatites, defining garnet as a reliable pathfinder mineral for the exploration of Sc mineralization in pegmatite fields. Garnets with highest Sc concentrations of up to 2197 µg/g have a spessartine component ranging from 50 to 60 mol.%. Since most garnets crystallized during the early stage of pegmatite formation (wall zone stage) Sc decreases in the remaining pegmatite melt, as documented by generally decreasing Sc from core to rim of crystals and by the occurrence of late-stage garnets (albite zone stage) with low Sc. Thus, with progressing crystallization Sc decreases in the melt. The regional Sc distribution in the Tørdal pegmatite field revealed that the Skardsfjell-Heftetjern-Høydalen pegmatites have highest Sc enrichments to sub-economic levels, with an average bulk Sc content of 53 µg/g and an average Sc content in garnet of about 1900 µg/g in the Heftetjern 2 pegmatite. The assumed resources of the Skardsfjell-Heftetjern-Høydalen area are about 125,000 t ore grading c. 50 µg/g Sc resulting in a total of 625 t Sc, which is too small to have economic potential. However, the strong Sc enrichment of the Tørdal pegmatites is unusual for granitic pegmatites, making them a specific Sc deposit type. The amphibolitic host rocks of the Tørdal pegmatites are identified as the source rocks of Sc. The host rocks, which are part of the Nissedal Outlier supracrustals, are enriched in Sc (mean 34 µg/g) compared to average crustal composition

In thin amorphous carbon (a-C) films being in contact with a thin nickel layer, metal-induced crystallization and layer exchange (LE) occur at temperatures lower than 700 °C. Analysis of thin film stacks with different architectures (a-C/Ni, Ni/a-C and Ni/a-C/Ni) by means of ion beam analysis, Raman spectroscopy, X-ray diffraction and transmission electron microscopy revealed that the degree of LE and the structural quality of the crystallized carbon layers depend on the initial layer sequence. A LE degree of approx. 93 % was found for Ni/a-C bilayers, where graphenic layers formed on the Ni surface, whereas in a-C/Ni bilayers only 83 % of carbon was transferred from the surface towards the fused silica substrate. The diffusion of carbon in the outward direction produces turbostratic carbon with basal planes oriented parallel to the Ni surface, while for the inward direction planar and curved turbostratic structures coexist. The crystallization and the LE are driven by the crystallization energy of a-C. The LE is mediated by the wetting of the Ni grain boundaries by carbon. The directionality of the LE was explained primarily by the difference in the surface and interface energies in the a-C/Ni and Ni/a-C stacks that were obtained from thermodynamic considerations.

Secondary ion mass spectrometry (SIMS) is routinely used for geochemical and mineralogical applications, but quantification is still the major challenge of this method. Each analysed matrix needs its own matrix-matched reference material (RM). However, the list of available reference materials is short compared to the needs. One approach for the production of suitable RMs is the use of ion implantation to introduce a known amount of an isotope into a matrix-matched material. This is widely used for SIMS applications in materials science, but rarely for geochemical problems. Bumett et al. (2014) [1] demonstrated the principal appropriateness and ways to calibrate nominal implant fluence. We choose the more elaborate way of implanting a box profile to allow an effectivly homogeneous distribution of the respective isotope in all three dimensions. Silicon dioxide SiO2, a “simple” mineralogical and chemical system, can record scientificly important data e.g. the Ti-in-quartz geothermometer [2, 3]. 47Ti respectively 48Ti were implanted into synthetic ultra-high purity silica glass. Box profiles with concentrations between 10 and 1000 ppm and a maximum depth of homogeneous 47/48Ti distribution between 200 and 500 nm were produced at the Ion Beam Center in Dresden-Rossendorf. Single implantation steps with different ion-energies and –doses were simulated with the SRIM (Stopping and Range of Ions in Matter) software [4] and optimized to the target concentrations, implantation-depths and technological limitations of the implanter. Several different implanted test-samples were characterized by means of SIMS, atomic force microscopy (AFM) and other analytical techniques. These showed that Ti is homogeneously distributed in the glass structure within ± 5% uncertainty in all 3 dimensions, while the surface-roughness remains suitable for SIMS depth profiling. Such reference materials are also very promising for the quantification of Supe

Johann Wolfgang von Goethe is known the world over as a renowned writer. However, he was also involved in scientific studies and has written several scientific books, of which he considered the “Theory of colours” (“Farbenlehre”, 1400 pages published in 1810) his most important work overall. In this work, he characterises colours as arising from the interplay between light and dark. This is in contrast to Newton’s analytical treatment of colour from one century earlier, which is based on the observation that white light can be separated into colours with a prism, that Goethe opposed. Over the centuries, Goethe’s theory was discredited and Newton’s theory prevailed. However, Goethe performed systematic and accurate optical measurements. For these experiments, he and his partner J. Ritter, who discovered UV-light, used water prisms and glass prisms ordered from a glassmaker in Jena. The aim of current research is to reconstruct these optical experiments and the observed spectra [1]. For this, detailed knowledge of the composition of the glass prisms is important. This knowledge is, for example, also important to evaluate how innovative his prisms were. Therefore, eleven prisms from Goethe’s estate or from contemporary sources belonging to the Klassik Stiftung Weimar have been analysed at the external beam setup of the Ion Beam Center at the HZDR. A 4 MeV proton beam has been used to acquire PIXE, PIGE and RBS spectra, sometimes on several areas. Care had to be taken to minimise damage by using short measurement times and measuring on inconspicuous areas because the glass quickly showed dark spots under irradiation. The PIXE and PIGE spectra have been used for quantitative analysis in an iterative procedure and the RBS spectra have only been evaluated quantitatively. The results of this analysis and the interpretation are presented in this work.

Introduction to the IOne Beam Cneter and Current Research.

In this study, we investigated the role of impurities, such as H, C, and O on the optical properties of the Ti(Al)N coatings. For comparison, coatings were prepared by direct-current magnetron sputtering (DC-MS) and high-power impulse magnetron sputtering (HiPIMS) at the same average power. The elemental composition of the thin films was measured by elastic recoil detection analysis. Regardless of the deposition technique used, no significant difference in H and C concentrations were found. The analysis showed, that HiPIMS coatings contain less O impurities than the corresponding DC-MS films, despite the lower deposition rate. The reduced residual O content in HiPIMS coatings can be explained by the cleaning effect of the bombarding ions. Moreover, densification effects presumably suppress post-deposition oxidation. Given the reduced O content, HiPIMS films showed higher optical reflectance for the entire measured spectral range.

In this study, we investigated the role of impurities, such as H, C, and O on the optical properties of the Ti(Al)N coatings. For comparison, coatings were prepared by direct-current magnetron sputtering (DC-MS) and high-power impulse magnetron sputtering (HiPIMS) at the same average power. The elemental composition of the thin films was measured by elastic recoil detection analysis. Regardless of the deposition technique used, no significant difference in H and C concentrations were found. The analysis showed, that HiPIMS coatings contain less O impurities than the corresponding DC-MS films, despite the lower deposition rate. The reduced residual O content in HiPIMS coatings can be explained by the cleaning effect of the bombarding ions. Moreover, densification effects presumably suppress post-deposition oxidation. Given the reduced O content, HiPIMS films showed higher optical reflectance for the entire measured spectral range.

Johann Wolfgang von Goethe is known the world over as a renowned writer. However, he was also involved in scientific studies and has written several scientific books, of which he considered the “Theory of colours” (“Farbenlehre”, 1400 pages published in 1810) his most important work overall. In this work, he characterises colours as arising from the interplay between light and dark. This is in contrast to Newton’s analytical treatment of colour from one century earlier, which is based on the observation that white light can be separated into colours with a prism, that Goethe opposed. Over the centuries, Goethe’s theory was discredited and Newton’s theory prevailed. However, Goethe performed systematic and accurate optical measurements. For these experiments, he and his partner J. Ritter, who discovered UV-light, used water prisms and glass prisms ordered from a glassmaker in Jena. The aim of current research is to reconstruct these optical experiments and the observed spectra [1]. For this, detailed knowledge of the composition of the glass prisms is important. This knowledge is, for example, also important to evaluate how innovative his prisms were. Therefore, eleven prisms from Goethe’s estate or from contemporary sources belonging to the Klassik Stiftung Weimar have been analysed at the external beam setup of the Ion Beam Center at the HZDR. A 4 MeV proton beam has been used to acquire PIXE, PIGE and RBS spectra, sometimes on several areas. Care had to be taken to minimise damage by using short measurement times and measuring on inconspicuous areas because the glass quickly showed dark spots under irradiation. The PIXE and PIGE spectra have been used for quantitative analysis in an iterative procedure and the RBS spectra have only been evaluated quantitatively. The results of this analysis and the interpretation are presented in this work.

Introduction to the IOne Beam Cneter and Current Research.

EPMA (Electron Probe Microanalysis) and SIMS (Secondary Ion Mass Spectrometry) are widely used analytical techniques for geochemical and mineralogical applications. Nevertheless, metrologically rigorous quantification remains a major challenge for these methods. SIMS in particular is a matrix-sensitive method; for SIMS the use of matrix-matched reference materials (RMs) is essential in order to avoid significant analytical bias. A major problem is that the list of available RMs for SIMS is vanishingly short compared to the needs of the analyst. One approach for the production of matrix-specific RMs is the use of high-energy ion implantation that introduces a known amount of a selected isotope into a material. We chose the more elaborate way of implanting a so-called ‘box profile’ to generate a quasi-homogeneous concentration of the implanted isotope in three dimensions, which allows RMs not only to be used for ion beam analysis but also makes them suitable for EPMA. For proof of concept, we used the thoroughly studied mineralogically and chemically ‘simple’ SiO2 system, which addresses many interesting scientific challenges, such as the Ti-in-quartz geothermometer (Wark et al. 2006, Thomas et al. 2010). We implanted either 47Ti or 48Ti into synthetic, ultra-high purity silica glass. Several ‘box profiles’ with concentrations between 10 and 1000 µg g-1 Ti and maximum depths of homogeneous Ti distribution between 200 nm and 3 µm were produced at the Institute of Ion Beam Physics and Materials Research of Helmholtz-Zentrum Dresden-Rossendorf (HZDR). Multiple implantation steps using varying ion energies and ion doses were simulated with the SRIM (Stopping and Range of Ions in Matter) software (Ziegler et al. 2008), optimizing for the target concentrations, implantation-depths and technical limits of the implanter. We characterized several implant test-samples having different concentrations and maximum implantation depths by means of SIMS and other analytical technique

EPMA (Electron Probe Microanalysis) and SIMS (Secondary Ion Mass Spectrometry) are widely used analytical techniques for geochemical and mineralogical applications. Nevertheless, metrologically rigorous quantification remains a major challenge for these methods. SIMS in particular is a matrix-sensitive method; for SIMS the use of matrix-matched reference materials (RMs) is essential in order to avoid significant analytical bias. A major problem is that the list of available RMs for SIMS is vanishingly short compared to the needs of the analyst. One approach for the production of matrix-specific RMs is the use of high-energy ion implantation that introduces a known amount of a selected isotope into a material. We chose the more elaborate way of implanting a so-called ‘box profile’ to generate a quasi-homogeneous concentration of the implanted isotope in three dimensions, which allows RMs not only to be used for ion beam analysis but also makes them suitable for EPMA. For proof of concept, we used the thoroughly studied mineralogically and chemically ‘simple’ SiO2 system, which addresses many interesting scientific challenges, such as the Ti-in-quartz geothermometer (Wark et al. 2006, Thomas et al. 2010). We implanted either 47Ti or 48Ti into synthetic, ultra-high purity silica glass. Several ‘box profiles’ with concentrations between 10 and 1000 µg g-1 Ti and maximum depths of homogeneous Ti distribution between 200 nm and 3 µm were produced at the Institute of Ion Beam Physics and Materials Research of Helmholtz-Zentrum Dresden-Rossendorf (HZDR). Multiple implantation steps using varying ion energies and ion doses were simulated with the SRIM (Stopping and Range of Ions in Matter) software (Ziegler et al. 2008), optimizing for the target concentrations, implantation-depths and technical limits of the implanter. We characterized several implant test-samples having different concentrations and maximum implantation depths by means of SIMS and other analytical technique

We study the influence of grain boundaries on radiation-induced vacancies, as well as, on the hydrogen (H) behavior in tungsten (W) samples with different grain sizes in the temperature range from 300 K to 573 K, both experimentally and by computer simulations. For this purpose, coarse-grained and nanostructured W samples were sequentially irradiated with carbon (C) and H ions at energies of 665 keV and 170 keV, respectively. A first set of the implanted samples was annealed at 473 K and a second set at 573 K. Object kinetic Monte Carlo simulations were performed to account for experimental outcomes. Results show that the number of vacancies for nanostructured W is always larger than for single crystal W samples in the whole studied temperature range and that the number of vacancies is only reduced in samples with a large density of grain boundaries and at temperatures high enough to activate the vacancy motion (around 573 K). Results also indicate that the migration of H along vacancy free grain boundaries is more effective than along the bulk, and that the retained H is trapped in vacancies located within the grains. These results are used to explain the experimental outcomes.

The coefficient of thermal expansion (CTE) of TiCxN1-x can be adjusted by changing the value x between 0 (i.e. pure TiN) and 1 (pure TiC), which makes this material exceptionally useful as base layer to adapt the mismatch between the CTEs of substrate and coating. However, no comprehensive data on the CTE of sputtered TiCxN1-x has been reported up to now. Thus, in this work eleven coatings with compositions ranging from pure TiN to pure TiC were deposited using non-reactive magnetron sputtering. The elemental and phase composition were obtained by elastic recoil detection analysis and Raman spectroscopy, respectively. Powders of the coating material were analyzed using high-temperature X-ray diffraction between room temperature and up to 1000 °C to determine the temperature dependent lattice parameters. Subsequently, these lattice parameters were fitted using second order polynomials with coefficients linearly depending on the carbon content. Thus, a formula for the CTE of TiCxN1-x valid between 25 and 1000 °C was deduced which showed that at room temperature TiN has the highest CTE of 8.12 × 10-6 K-1. The CTE gradually decreases with increasing carbon content to 7.55 × 10-6 K-1 for pure TiC. While the value for TiC only shows a small increase with temperature, the CTE of TiN increases strongly up to 11.1 × 10-6 K-1 at 1000 °C. The presented formula for the temperature dependent CTE of sputtered TiCxN1-x coatings allows to calculate the required composition for TiCxN1-x base layers, in order to tune their thermal expansion for the use in complex multilayered coatings.

Projekttreffen-relevanter Vortrag zur ERDA-Untersuchung von Fluor in Nickel-basierten Legierungen nach Plasma-Immersions-Implantation

High energy ion beams as a powerful tool for the surface analysis of the elemental composition of almost any sample.

Projekttreffen-relevanter Vortrag zur ERDA-Untersuchung von Fluor in Nickel-basierten Legierungen nach Plasma-Immersions-Implantation

In this study, we investigated the role of impurities, such as H, C, and O on the optical properties of the Ti(Al)N coatings. For comparison, coatings were prepared by direct-current magnetron sputtering (DC-MS) and high-power impulse magnetron sputtering (HiPIMS) at the same average power. The elemental composition of the thin films was measured by elastic recoil detection analysis. Regardless of the deposition technique used, no significant difference in H and C concentrations were found. The analysis showed, that HiPIMS coatings contain less O impurities than the corresponding DC-MS films, despite the lower deposition rate. The reduced residual O content in HiPIMS coatings can be explained by the cleaning effect of the bombarding ions. Moreover, densification effects presumably suppress post-deposition oxidation. Given the reduced O content, HiPIMS films showed higher optical reflectance for the entire measured spectral range.

In this study, we investigated the role of impurities, such as H, C, and O on the optical properties of the Ti(Al)N coatings. For comparison, coatings were prepared by direct-current magnetron sputtering (DC-MS) and high-power impulse magnetron sputtering (HiPIMS) at the same average power. The elemental composition of the thin films was measured by elastic recoil detection analysis. Regardless of the deposition technique used, no significant difference in H and C concentrations were found. The analysis showed, that HiPIMS coatings contain less O impurities than the corresponding DC-MS films, despite the lower deposition rate. The reduced residual O content in HiPIMS coatings can be explained by the cleaning effect of the bombarding ions. Moreover, densification effects presumably suppress post-deposition oxidation. Given the reduced O content, HiPIMS films showed higher optical reflectance for the entire measured spectral range.

Secondary ion mass spectrometry (SIMS) is routinely used for geochemical and mineralogical applications, but quantification is still the major challenge of this method. Each analysed matrix needs its own matrix-matched reference material (RM). However, the list of available reference materials is short compared to the needs. One approach for the production of suitable RMs is the use of ion implantation to introduce a known amount of an isotope into a matrix-matched material. This is widely used for SIMS applications in materials science, but rarely for geochemical problems. Bumett et al. (2014) [1] demonstrated the principal appropriateness and ways to calibrate nominal implant fluence. We choose the more elaborate way of implanting a box profile to allow an effectivly homogeneous distribution of the respective isotope in all three dimensions. Silicon dioxide SiO2, a “simple” mineralogical and chemical system, can record scientificly important data e.g. the Ti-in-quartz geothermometer [2, 3]. 47Ti respectively 48Ti were implanted into synthetic ultra-high purity silica glass. Box profiles with concentrations between 10 and 1000 ppm and a maximum depth of homogeneous 47/48Ti distribution between 200 and 500 nm were produced at the Ion Beam Center in Dresden-Rossendorf. Single implantation steps with different ion-energies and –doses were simulated with the SRIM (Stopping and Range of Ions in Matter) software [4] and optimized to the target concentrations, implantation-depths and technological limitations of the implanter. Several different implanted test-samples were characterized by means of SIMS, atomic force microscopy (AFM) and other analytical techniques. These showed that Ti is homogeneously distributed in the glass structure within ± 5% uncertainty in all 3 dimensions, while the surface-roughness remains suitable for SIMS depth profiling. Such reference materials are also very promising for the quantification of Supe

In this study, we investigated the role of impurities, such as H, C, and O on the optical properties of the Ti(Al)N coatings. For comparison, coatings were prepared by direct-current magnetron sputtering (DC-MS) and high-power impulse magnetron sputtering (HiPIMS) at the same average power. The elemental composition of the thin films was measured by elastic recoil detection analysis. Regardless of the deposition technique used, no significant difference in H and C concentrations were found. The analysis showed, that HiPIMS coatings contain less O impurities than the corresponding DC-MS films, despite the lower deposition rate. The reduced residual O content in HiPIMS coatings can be explained by the cleaning effect of the bombarding ions. Moreover, densification effects presumably suppress post-deposition oxidation. Given the reduced O content, HiPIMS films showed higher optical reflectance for the entire measured spectral range.

SIMS (Secondary Ion Mass Spectrometry) is a routinely used analytical technique for geochemical and mineralogical applications. Nevertheless, quantification is still the major challenge of this method. Due to the fact, that each analysed matrix needs its own matrix-matched reference material (RM), the list of available reference materials is short compared to the needs of the analysts. A current evaluation of the GeoReM database [1] shows a strong focus on using the well-known NIST SRM 610-617 glasses for trace element analysis and several zircons for isotope analysis. One approach for the production of suitable RMs is the use of ion implantation to introduce a known amount of an isotope into a matrix-matched material. This approach is widely-used for SIMS applications in materials science, but rarely used for geochemical problems. Bumett et al. (2014) [2] demonstrated the principal appropriateness of this method and ways to calibrate nominal implant fluence. We choose the more elaborate way of implanting a box profile to allow a homogeneous distribution of the respective isotope in all three dimensions. The mineralogical and chemical “simple” SiO2 system entails many interesting scientific challenges like the Ti-in-quartz geothermometer [3, 4]. We implanted 47Ti respectively 48Ti into synthetic ultra-high purity silica glass. Several box profiles with concentrations between 10 and 1000 ppm and a maximum depth of homogeneous 47/48Ti distribution between 200 and 500 nm were produced at the Ion Beam Center in Dresden-Rossendorf. The single implantation steps with different ion-energies and -doses were simulated with the SRIM (Stopping and Range of Ions in Matter) software [5] and optimized to the necessary concentrations, implantation-depths and limits of the implanter. After the implantations, the surface-roughness of the implanted glasses was measured using atomic force microscopy (AFM). The roughness is still in the range

In a fast growing world with increasing demand on resources like high-tech metals as In, Ga, Ge, or rare earth elements (REE), mineralogists and economic geologists need faster and automated analytical tools to explore mineral deposits, make them accessible and define necessary initial data for all subsequent processing steps. Next to the necessary knowledge in which phases the elements of interest, ecotoxical as well as deleterious elements are concentrated, it is important to determine structural parameters like grain sizes and possible intergrowths relations of these minerals. These are typical geometallurgical analytical tasks, which are so far routinely performed by electron beam based methods of automated mineralogy, like MLA (mineral liberation analysis) or QEMSCAN, with their advantages and disadvantages. The methodological problems of these type of methods are, for example, the necessary measurement time, insufficient limits of detection (no trace element detection) and high background (electron Bremsstrahlung). Some of these hurdles can be overcome by using alternative excitation radiation, like ions, known as particle-induced X-ray emission (PIXE) or X-rays, known as X-ray fluorescence (XRF). Combining these with a full-field detection system, such as the so-called SLcam®[1], allows the determination of trace element distributions in reasonable time over a large field of view. The SLcam® consists of a 12 x 12 mm², X-ray sensitive pnCCD chip with 69696 pixels. A high read-out speed of up to 1000 Hz, allows the acquisition of complete X-ray spectra (2-20 keV) on each pixel simultaneously, with an energy resolution of around 160 eV (@ Mn-K even for high photon fluxes. A poly-capillary lens is used to guide the X-rays from their point of origin on the sample to the corresponding pixel on the detector-chip. Usage of a straight 1:1 lens results in a lateral resolution better than 100 µm. The MEGA spectrometer is equipped with a laboratory-scale X-ray tube. X

In a fast growing world with increasing demand on resources like high-tech metals as In, Ga, Ge, or rare earth elements (REE), mineralogists and economic geologists need faster and automated analytical tools to explore mineral deposits, make them accessible and define necessary initial data for all subsequent processing steps. Next to the necessary knowledge in which phases the elements of interest, ecotoxical as well as deleterious elements are concentrated, it is important to determine structural parameters like grain sizes and possible intergrowths relations of these minerals. These are typical geometallurgical analytical tasks, which are so far routinely performed by electron beam based methods of automated mineralogy, like MLA (mineral liberation analysis) or QEMSCAN, with their advantages and disadvantages. The methodological problems of these type of methods are, for example, the necessary measurement time, insufficient limits of detection (no trace element detection) and high background (electron Bremsstrahlung). Some of these hurdles can be overcome by using alternative excitation radiation, like ions, known as particle-induced X-ray emission (PIXE) or X-rays, known as X-ray fluorescence (XRF). Combining these with a full-field detection system, such as the so-called SLcam®[1], allows the determination of trace element distributions in reasonable time over a large field of view. The SLcam® consists of a 12 x 12 mm², X-ray sensitive pnCCD chip with 69696 pixels. A high read-out speed of up to 1000 Hz, allows the acquisition of complete X-ray spectra (2-20 keV) on each pixel simultaneously, with an energy resolution of around 160 eV (@ Mn-K even for high photon fluxes. A poly-capillary lens is used to guide the X-rays from their point of origin on the sample to the corresponding pixel on the detector-chip. Usage of a straight 1:1 lens results in a lateral resolution better than 100 µm. The MEGA spectrometer is equipped with a laboratory-scale X-ray tube. X

SIMS (Secondary Ion Mass Spectrometry) is a routinely used analytical technique for geochemical and mineralogical applications. Nevertheless, quantification is still the major challenge of this method. Due to the fact, that each analysed matrix needs its own matrix-matched reference material (RM), the list of available reference materials is short compared to the needs of the analysts. A current evaluation of the GeoReM database [1] shows a strong focus on using the well-known NIST SRM 610-617 glasses for trace element analysis and several zircons for isotope analysis. One approach for the production of suitable RMs is the use of ion implantation to introduce a known amount of an isotope into a matrix-matched material. This approach is widely-used for SIMS applications in materials science, but rarely used for geochemical problems. Bumett et al. (2014) [2] demonstrated the principal appropriateness of this method and ways to calibrate nominal implant fluence. We choose the more elaborate way of implanting a box profile to allow a homogeneous distribution of the respective isotope in all three dimensions. The mineralogical and chemical “simple” SiO2 system entails many interesting scientific challenges like the Ti-in-quartz geothermometer [3, 4]. We implanted 47Ti respectively 48Ti into synthetic ultra-high purity silica glass. Several box profiles with concentrations between 10 and 1000 ppm and a maximum depth of homogeneous 47/48Ti distribution between 200 and 500 nm were produced at the Ion Beam Center in Dresden-Rossendorf. The single implantation steps with different ion-energies and -doses were simulated with the SRIM (Stopping and Range of Ions in Matter) software [5] and optimized to the necessary concentrations, implantation-depths and limits of the implanter. After the implantations, the surface-roughness of the implanted glasses was measured using atomic force microscopy (AFM). The roughness is still in the range