98 results on '"Aagesen, Martin"'
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52. AlGaAs/GaAs single electron transistor fabricated without modulation doping
53. Ferromagnetic proximity effect in a ferromagnet-quantum-dot-superconductor device
54. Role of background impurities in the single-particle relaxation lifetime of a two-dimensional electron gas
55. High-resolution three-dimensional reciprocal space mapping of semiconductor nanostructures
56. Junctions in axial III-V heterostructure nanowires obtained via an interchange of group III elements
57. Measured deviations from the saddle potential description of clean quantum point contacts
58. Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy
59. Giant fluctuations and gate control of the g-factor in InAs nanowire quantum dots
60. Tunable double dots and kondo enhanced Andreev transport in InAs nanowires
61. Self-Catalyzed GaAsP Nanowires Grown on Silicon Substrates by Solid-Source Molecular Beam Epitaxy
62. Advances in the theory of III–V nanowire growth dynamics
63. GaAsP single nanowire solar cells grown on silicon exhibiting large Voc increase at multiple suns
64. Single-nanowire solar cells beyond the Shockley–Queisser limit
65. Surface-passivated GaAsP single-nanowire solar cells exceeding 10% efficiency grown on silicon
66. MBE grown nanorods and nanoplates
67. Self-gating of quantum-point contacts at the onset of electron tunneling
68. Facet structure of GaAs nanowires grown by molecular beam epitaxy
69. Molecular beam epitaxy growth of free-standing plane-parallel InAs nanoplates
70. TEM of free standing InAs nanoplates grown by molecular beam epitaxy
71. CBED crystal polarity analysis of compound semiconductor nanostructures
72. Kondo-enhanced Andreev tunneling in InAs nanowire quantum dots
73. Influence of Droplet Size on the Growth of Self-Catalyzed Ternary GaAsP Nanowires.
74. Defect-Free Self-Catalyzed GaAs/GaAsP Nanowire Quantum Dots Grown on Silicon Substrate.
75. Kondo physics in tunable semicondouctor nanowire quantum dots
76. Current-voltage characteristic of quantum-point contacts in the closed-channel regime:tranforming the bias voltage into an energy scale
77. Aagesen, Martin
78. Influence of droplet size on the growth of high-quality self-catalyzed GaAsP nanowires
79. GaAsP nanowires and nanowire devices grown on silicon substrates
80. Impact of the Liquid Phase Shape on the Structure of III-V Nanowires
81. Fabrication of Undoped AlGaAs∕GaAs Electron Quantum Dots
82. Fabrication of undoped AlGaAs/GaAs electron quantum dots
83. Junctions in Axial III−V Heterostructure Nanowires Obtained via an Interchange of Group III Elements
84. Cover Picture (Phys. Status Solidi A 8/2009)
85. High-resolution three-dimensional reciprocal space mapping of semiconductor nanostructures
86. Measured deviations from the saddle potential description of clean quantum point contacts
87. Molecular beam epitaxy growth of free-standing plane-parallel InAs nanoplates
88. Kondo physics in tunable semiconductor nanowire quantum dots
89. Growth of high-quality self-catalyzed core-shell GaAsP nanowires on Si substrates
90. Self-Catalyzed Ternary Core–Shell GaAsP NanowireArrays Grown on Patterned Si Substrates by Molecular Beam Epitaxy.
91. Wafer-Scale Fabrication of Self-Catalyzed 1.7 eV GaAsPCore–Shell Nanowire Photocathode on Silicon Substrates.
92. Self-Catalyzed GaAsP Nanowires Grown on Silicon Substratesby Solid-Source Molecular Beam Epitaxy.
93. Single-nanowire solar cells beyond the Shockley-Queisser limit
94. Growth and Fabrication of High-Quality Single Nanowire Devices with Radial p-i-n Junctions.
95. Doping of Self-Catalyzed Nanowires under the Influence of Droplets.
96. Growth of Pure Zinc-Blende GaAs(P) Core-Shell Nanowires with Highly Regular Morphology.
97. Defect-Free Self-Catalyzed GaAs/GaAsP Nanowire Quantum Dots Grown on Silicon Substrate.
98. Junctions in axial III-V heterostructure nanowires obtained via an interchange of group III elements.
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