81 results on '"Bhuiyan, A. F. M. Anhar Uddin"'
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52. Direct observation of site-specific dopant substitution in Si doped (Al x Ga1− x )2O3 via atom probe tomography
53. Large-size free-standing single-crystal β-Ga2O3 membranes fabricated by hydrogen implantation and lift-off
54. (Invited) Development of Single Crystal Nbn Superconductor on Wide Bandgap GaN By Sputtering and Thermal Annealing.
55. Band offsets of (100)β -(AlxGa1−x)2O3/ β -Ga2O3 heterointerfaces grown via MOCVD
56. Mg acceptor doping in MOCVD (010) β-Ga2O3
57. Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β-Ga2O3
58. MOCVD growth of β-phase (AlxGa1−x)2O3 on ( 2 ¯01) β-Ga2O3 substrates
59. Response to “Comment on ‘Phase transformation in MOCVD growth of (AlxGa1−x)2O3 thin films’” [APL Mater. 8, 089101 (2020)]
60. Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga2O3
61. A combined approach of atom probe tomography and unsupervised machine learning to understand phase transformation in (AlxGa1−x)2O3
62. Phase transformation in MOCVD growth of (AlxGa1−x)2O3 thin films
63. Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition
64. MOCVD growth of (010) β-(AlxGa1−x)2O3 thin films.
65. Band offsets at metalorganic chemical vapor deposited β-(AlxGa1−x)2O3/β-Ga2O3 interfaces—Crystalline orientation dependence.
66. Planar and three-dimensional damage-free etching of β-Ga2O3 using atomic gallium flux.
67. Metalorganic chemical vapor deposition of α-Ga2O3 and α-(AlxGa1−x)2O3 thin films on m-plane sapphire substrates.
68. Large-size free-standing single-crystal β-Ga2O3 membranes fabricated by hydrogen implantation and lift-off.
69. Direct observation of site-specific dopant substitution in Si doped (AlxGa1−x)2O3 via atom probe tomography.
70. Band offsets of (100) β-(AlxGa1−x)2O3/β-Ga2O3 heterointerfaces grown via MOCVD.
71. MOCVD growth of β-phase (AlxGa1−x)2O3 on (2¯01) β-Ga2O3 substrates.
72. Point Defects and Alloy Incorporation in Ultrawide Bandgap β -(AlxGa1-x)2O3 Films.
73. Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga2O3.
74. Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga2O3.
75. A combined approach of atom probe tomography and unsupervised machine learning to understand phase transformation in (AlxGa1-x)2O3.
76. Metalorganic chemical vapor deposition of ultrawide bandgap (AlxGa1-x)2O3 for next generation power electronics
77. MOCVD growth of (010) β-(AlxGa1−x)2O3thin films
78. Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX.
79. Pulsed-Mode MOCVD Growth of ZnSn(Ga)N2and Determination of the Valence Band Offset with GaN
80. High-Mobility MOCVD β-Ga2O3Epitaxy with Fast Growth Rate Using Trimethylgallium
81. A combined approach of atom probe tomography and unsupervised machine learning to understand phase transformation in (AlxGa1-x)2O3.
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