77 results on '"Bleichner, H."'
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52. A comparative study of the carrier distributions in dynamically operating GTO's by means of two optically probed measurement methods.
53. Experimentally verified, temperature dependent physical models/parameters for power device simulation.
54. An optical system for bilateral recombination-radiation diagnostics of the carrier redistribution in switching power devices
55. A time-resolved optical system for spatial characterization of the carrier distribution in a gate turn-off thyristor (GTO)
56. Investigation of Electroluminescence across 4H-SiC p+/n-/n+ Structures Using Optical Emission Microscopy
57. Flying-spot scanning for the separate mapping of resistivity and minority-cariier lifetime in silicon
58. Subthreshold behaviour of silicon MESFET's on SOS and bulk silicon substrates
59. An improved silicon p-channel MESFET with a BF2 implanted thin channel and ErSi1 gate
60. Radiation effects on silicon MESFET's
61. Complementary MESFET technology on buk silicon
62. Optical characterization of the carrier distribution in a gate turn-off thyristor
63. Bulk silicon technology for complementary MESFET's
64. A study of the transconductance in MES-transistors on bulk silicon
65. The influence of gate-metallization potential drop on transient GTO characteristics
66. Observation of near-surface electrically active defects in n-type 6H-SiC
67. Investigation of electroluminescence across 4H-SiC p+/n-/n+ structures using optical emission microscopy
68. Bulk silicon technology for complementary MESFETs
69. Flying-spot scanning for the separate mapping of resistivity and minority-carrier lifetime in silicon
70. Subthreshold behaviour of silicon MESFETs on SOS and bulk silicon substrates
71. An improved silicon p-channel MESFET with a BF2 implanted thin channel and ErSi2 gate
72. Experimentally verified, temperature dependent physical models/parameters for power device simulation
73. 4.5 kV 4H-SiC diodes with ideal forward characteristic
74. Turn-off failure mechanisms in gto thyristors of different anode designs supported by 3-d simulations
75. A comparative study of the carrier distributions in dynamically operating GTO's by means of two optically probed measurement methods
76. Cosmic ray-induced DC-stability failure in Si diodes
77. An improved silicon p-channel MESFET with a BF 2 implanted thin channel and ErSi 2 gate
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