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We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100nm gate length at room temperature in low-power regime. Extrinsic cut-off frequencies fT/fmax of 100/125GHz together with minimum noise figure NFmin= 0.5 dB and associated gain Gass =12 dB at 12GHz have been obtained at drain bias of only 80mV, corresponding to 4mW/mm DC power dissipation. This demonstrates the great ability of AlSb/InAs HEMT for high-frequency operation combined with low-noise performances in ultra-low-power regime. [ABSTRACT FROM AUTHOR]

A multi-gate n-type In0.53Ga0.47As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter such as threshold voltage, high and low voltage transconductance, subthreshold swing and off current are investigated at room temperature. Scaling the gate length revealed good enhancement in all investigated parameters but the negative shift in threshold voltage was observed for shorter gate lengths. The high drain current of 1.13 A/mm and maximum extrinsic transconductance of 678 mS/mm with the field effect mobility of 364 cm2/Vs are achieved for the gate length and width of 0.2 µm and 30µm, respectively. The source/drain overlap length for the device is approximately extracted about 51 nm with the leakage current in order of 10−8 A. The results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared. [ABSTRACT FROM AUTHOR]

Presents information on a study which proposed a numerical model describing the influence of InAs mole fraction on metamorphic high-electron-mobility transistor (HEMT) structures. Material properties; Device modeling; Results; Conclusions.

The negative potential appearing at the central branch of T-branch junctions (TBJs) when biasing left and right contacts in push-pull fashion has been found to appear under high biasing not only for short (ballistic) TBJs but also for long (diffusive) ones. By means of a microscopic Monte Carlo simulation we are able to explain this nonlinear effect as a consequence of intervalley scattering mechanisms leading to the emergence of an accumulation domain that modifies the electronic potential profile within the devices. [ABSTRACT FROM AUTHOR]

In this paper we report on the fabrication and electrical characterization of InAs-on-nothing metal-oxide-semiconductor field-effect transistor composed of a suspended InAs channel and raised InAs n+ contacts. This architecture is obtained using 3D selective and localized molecular beam epitaxy on a lattice mismatched InP substrate. The suspended InAs channel and InAs n+ contacts feature a reproducible and uniform shape with well-defined 3D sidewalls. Devices with 1 μm gate length present a saturation drain current (I Dsat ) of 300 mA mm -1 at V DS  = 0.8 V and a trans-conductance (G M ) of 120 mS mm -1 at V DS  = 0.5 V. In terms of electrostatic control, the devices display a minimal subthreshold swing of 110 mV dec -1 at V DS  = 0.5 V and a small drain induced barrier lowering of 50 mV V -1 .

We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequencies fT/f max of 100/125 GHz together with minimum noise figure NF(min) = 0.5 dB and associated gain G(ass) = 12 dB at 12 GHz have been obtained at drain bias of only 80 mV, corresponding to 4 mW/mm DC power dissipation. This demonstrates the great ability of AlSb/InAs HEMT for high-frequency operation combined with low-noise performances in ultra-low-power regime.