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This study aimed to analyze the characteristics and risk factors associated with casual sexual behavior among sexually active college students and to contribute to AIDS prevention and control efforts among this demographic. A cross-sectional survey was conducted using a stratified cluster sampling technique. Self-reported sexually active college students were selected as respondents from 11 cities in Zhejiang Province from October 8 to November 30, 2018. A questionnaire was used to collect variables such as demographic information, sexual attitudes, intervention acceptance, and self-efficacy of condom use. Univariate and multivariate analyses were performed. Among 3,771 college students who reported engaging in sexual activity, 675 (17.90%) reported engaging in casual sexual encounters. The multivariate analysis revealed multiple factors associated with casual sexual behavior among students: being male, originating from a city/town, having pursued HIV testing education in the last year, seeking HIV risk self-assessment within the last year, accepting to engage in one-night stand behavior, accepting to partake in commercial sexual activity, having conducted HIV antibody tests within the last year, homosexual partner or homosexual/heterosexual partner, demonstrating self-efficacy in condom usage, and monthly living expenses falling within the range of 1001–1500 yuan. Additionally, students with knowledge that appearance does not determine HIV infection, a proclivity for seeking HIV counseling and testing following high-risk sexual behavior and awareness that the centers for disease control provides HIV diagnosis were found to have significant associations with casual sexual activity. Casual sex is significantly prevalent among college students, with male, students from urban areas, those who accepted to engage in one-night stand behavior and partook in commercial sexual activity demonstrating a higher propensity for such behavior. This tendency can be attributed to several factors including a more liberal sexual attitude, a rudimentary understanding of HIV risk, and a low adoption rate of HIV testing. Therefore, it is imperative to enhance HIV prevention and education among college students. [ABSTRACT FROM AUTHOR]

In this Letter, we investigate the threshold voltage (VTH) instability of Schottky p-GaN gate high electron mobility transistors (SP-HEMTs) under high-frequency operation by a resistive-load hard switching method. The abnormal VTH instability is observed, which is different between fully and partially depleted SP-HEMTs (FD- and PD-HEMTs). Notably, for FD-HEMT, VTH shifts positively with effective stress time. However, the VTH instability in PD-HEMT is more complex. At low VGS (e.g., 3 V) and high VGS (e.g., 6 V), VTH shifts positively with stress time consistently. Nevertheless, at intermediate VGS levels (e.g., 4 and 5 V), VTH initially shifts positively and then negatively, displaying a non-monotonous variation. Furthermore, the frequency dependence of VTH is contingent upon VGS. At low VGS, VTH exhibits a negative shift with the increase in frequency. This trend inverses when VGS exceeds 4 V. And it should be noted that the extracted VTH under high-frequency operation is lower than their quasi-static values for both transistor types. This work depicts the physical process and mechanism of the abnormal VTH instability; different from the quasi-static case, hole accumulation effects will be enhanced due to the high dV/dt, which results in a lower VTH. The distinct VTH behaviors of FD- and PD-HEMTs are closely related to the trapping effects, as well as hole accumulation and insufficiency, within the two different p-GaN gate layers. [ABSTRACT FROM AUTHOR]

We present an interface-type memristor utilizing native silicon oxide nanostructures achieved through controlled plasma oxidation engineering at room temperature. This process effectively reduces the concentration of oxygen vacancies on the surface of the native silicon oxide, facilitating oxygen-vacancy-mediated interfacial resistive switching with excellent COMS compatibility and low switching variability (1.03% for C2C and 3.96% for D2D variability). Moreover, this dynamic memristor exhibits favorable nonlinearity and short-term memory (STM) effects, which are crucial properties for the development of memristor-based reservoir computing (RC) systems. Compared with the conventional neural network, the RC system requires fewer trainable weights to achieve an accuracy of 96.7% for the Iris classification task. By the addition of virtual nodes to the reservoir with masks, the accuracy can be further increased to 100%. A simple digit recognition task is also employed, and noisy images that are not included in the original training set can be recognized correctly. These results highlight the great potential of our device for constructing reservoir computing hardware. [ABSTRACT FROM AUTHOR]

Lymphocyte immunotherapy (LIT) to treat recurrent miscarriage involves receipt of lymphocytes to a patient from a donor, usually the patient's male partner. Although the European Society of Human Reproduction and [...]