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63. Study on the Deposition Characteristics of Molybdenum Thin Films Deposited by the Thermal Atomic Layer Deposition Method Using MoO 2 Cl 2 as a Precursor.

Author

Lee, Baek-Ju, Lee, Kyu-Beom, Cheon, Min-Ho, Seo, Dong-Won, and Choi, Jae-Wook

Subjects
ATOMIC layer deposition, THIN films, SILICON nitride films, THIN film deposition, MOLYBDENUM nitrides, MOLYBDENUM, ALUMINUM nitride
Abstract

In this study, we conducted research on manufacturing molybdenum (Mo) thin films by a thermal atomic layer deposition method using solid MoO2Cl2 as a precursor. Mo thin films are widely used as gate electrodes and electrodes in metal-oxide semiconductor field-effect transistors. Tungsten (W) has primarily been used as a conventional gate electrode, but it suffers from reduced resistivity due to the residual fluorine component generated from the deposition process. Thus, herein, we developed a Mo thin film with low resistivity that can substitute W. The MoO2Cl2 precursor used to deposit the Mo thin film exists in a solid state. For solid precursors, the vapor pressure does not remain constant compared to that of liquid precursors, thereby making it difficult to set process conditions. Furthermore, the use of solid precursors at temperatures 600 °C and above has many limitations. Herein, H2 was used as the reactive gas for the deposition of Mo thin films, and the deposition temperature was increased to 650 °C, which was the maximum processing temperature of the aluminum nitride heater. Additionally, deposition rate, resistivity change, and surface morphology characteristics were compared. While resistivity decreased to 12.9 μΩ∙cm with the increase of deposition temperature from 600 °C to 650 °C, surface roughness (Rq) was increased to 0.560 nm with step coverage of 97%. X-ray diffraction analysis confirmed the crystallization change in the Mo thin film with increasing process temperature, and a certain thickness of the seed layer was required for nucleation on the initial wafer of the Mo thin film. Thus, the molybdenum nitride thin film was deposited after the 4 nm deposition of Mo thin film. This study confirmed that crystallinity of Mo thin films must be increased to reduce their resistivity and that a seed layer for initial nucleation is required. [ABSTRACT FROM AUTHOR]

Published
2023
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70. A Study on the Gap-Fill Process Deposited by the Deposition/Etch/Deposition Method in the Space-Divided PE-ALD System.

Author

Lee, Baek-Ju, Seo, Dong-Won, and Choi, Jae-Wook

Subjects
DIELECTRIC thin films, PERMITTIVITY
Abstract

This study concerns the development of a gap-fill process technology for isolating trench patterns. There are various gap-filling techniques in the case of trench patterns; nevertheless, a processing technology adopting the DED (deposition/etch/deposition) method was developed in this study. After the etch step, an Ar/O2 (1:2) plasma treatment technology reduced the residual amount of F in the films to 0.05%. By improving the etch uniformity, the deposition uniformity after the DED process on a 12-inch flat wafer was secured within <1%, and a high-quality SiO2 thin film with a dielectric constant of 3.97 and a breakdown field of 11.41 MV/cm was fabricated. The DED method can be used for gap-filling even in patterns with a high aspect ratio by changing process parameters, such as RF power and division of etch steps, according to the shape, depth, and CD size of the pattern. This study confirmed that a void-free gap-fill process can be developed in a trench pattern with a maximum aspect ratio of 40:1. [ABSTRACT FROM AUTHOR]

Published
2023
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77. Na2wo4/Mn Supported on All-Silica Delaminated Zeolite for the Optimal Oxidative Coupling of Methane Via the Effective Stabilization of Tetrahedral Wo4: Elucidating Effects of Support Precursors with Different Crystal Structures, Al-Addition, and Morphologies

Author

Gu, Sangseo, primary, Lee, Taehee, additional, Shim, Jaehee, additional, Choi, Jae-Wook, additional, Suh, Dong Jin, additional, Lee, Hyunjoo, additional, Yoo, Chun-Jae, additional, Baik, Hionsuck, additional, Choi, Jungkyu, additional, and Ha, Jeong-Myeong, additional

Published
2022
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