368 results on '"Endo, Katsuyoshi"'
Search Results
52. Drastic Improvement in Adhesion Property of Polytetrafluoroethylene (PTFE) via Heat-Assisted Plasma Treatment Using a Heater
53. Radiolytic Synthesis of Pt-Particle/ABS Catalysts for H2O2 Decomposition in Contact Lens Cleaning
54. Atomic image of hydrogen-terminated Si(001) surfaces after wet cleaning and its first-principles study.
55. Electro-chemical mechanical polishing of single-crystal SiC using CeO2 slurry
56. Enhancements of photoluminescence intensity in high-quality floating-zone Si by thermal annealing in vacuum
57. Measurement of aspheric mirror by nanoprofiler using normal vector tracing
58. Measurement of a concave spherical mirror with 50 mm radius of curvature by three dimensional nanoprofiler using normal vector tracing
59. Absolute distance measurement of optical path length of non-contact three-dimensional nanoprofiler based on normal vector tracing method by tandem white-light interferometer
60. Effect of rubber compounding agent on adhesion strength between rubber and heat-assisted plasma-treated polytetrafluoroethylene (PTFE).
61. Study on Removal Mechanism of Sapphire in Plasma Assisted Polishing
62. Improvement in Adhesion between Polytetrafluoroethylene（PTFE）and Electroless-Plated Copper Film Using Heat-Assisted Plasma Treatment
63. Systematic error analysis for 3D nanoprofiler tracing normal vector
64. The measurement of an aspherical mirror by three-dimensional nanoprofiler
65. Simulation-based systematic error compensation for nanoprofiler using normal vector tracing method
66. Atomic-scale and pit-free flattening of GaN by combination of plasma pretreatment and time-controlled chemical mechanical polishing
67. Capacitive VHF Plasma Simulation at Atmospheric Pressure by Local Field Approximation Method
68. Competition between surface modification and abrasive polishing: a method of controlling the surface atomic structure of 4H-SiC (0001)
69. Study on controlling mechanism of step-terrace structure in CeO2 slurry polishing of 4H-SiC
70. Preliminary Study on Highly Efficient Polishing of 4H-SiC by Utilization of Anodic Oxidation
71. Finishing of 4H-SiC (0001) by Combination of Thermal Oxidation and Abrasive Polishing
72. Material Removal Rate Control in Open-Air Type Plasma Chemical Vaporization Machining by Pulse Width Modulation of Applied Power
73. Figuring and Finishing of Reaction-Sintered SiC by Anodic Oxidation Assisted Process
74. Investigation of Removal Mechanism of Sapphire in Plasma Assisted Polishing
75. Fabrication of Ultraprecisely Figured Mirror for Nano Focusing Hard-x-ray
76. Ultraprecision Finishing of Photomask Substrate by Utilizing Atmospheric Pressure Plasma
77. Development of Ultra Precision Finishing Method for Quartz Crystal Wafer Utilizing Atmospheric Pressure Plasma
78. Comparison of thermal oxidation and plasma oxidation of 4H-SiC (0001) for surface flattening
79. Open-air type plasma chemical vaporization machining by applying pulse-width modulation control
80. Experimental Studies on Water Vapor Plasma Oxidation and Thermal Oxidation of 4H-SiC (0001) for Clarification of the Atomic-Scale Flattening Mechanism in Plasma Assisted Polishing
81. Enhancement of photoluminescence efficiency from GaN(0001) by surface treatments
82. Measurement of high accurate mirror using nanoprofiler with self-calibratable rotary encoder
83. Deuelopment of Noncontact Scanning Nano-profiler
84. Erratum: “Atomic-scale planarization of 4H-SiC (0001) by combination of thermal oxidation and abrasive polishing” [Appl. Phys. Lett. 103, 111603 (2013)]
85. Atomic-scale planarization of 4H-SiC (0001) by combination of thermal oxidation and abrasive polishing
86. Development of a high-speed nanoprofiler using normal vector tracing method for high-accuracy mirrors
87. Development of a nanoprofiler using the follow-up normal vector to the surface for next-generation ultraprecise mirrors
88. High-speed surface slope measuring profiler for aspheric shapes
89. Measurement of aspheric mirror by nanoprofiler using normal vector tracing
90. Mechanism of atomic-scale passivation and flattening of semiconductor surfaces by wet-chemical preparations
91. Structure and Magnetic Properties of Mono- and Bi-Layer Graphene Films on Ultraprecision Figured 4H-SiC(0001) Surfaces
92. Surface treatments toward obtaining clean GaN(0001) from commercial hydride vapor phase epitaxy and metal-organic chemical vapor deposition substrates in ultrahigh vacuum
93. Ultra-precision Figured 4H-SiC(0001) Surfaces
94. Etching characteristics of GaN by plasma chemical vaporization machining
95. International 21st Century COE Symposium on Atomistic Fabrication Technology 2007
96. Very High Carrier Mobility for High-Performance CMOS on a Si(110) Surface
97. International 21st Century COE Symposium on “Atomistic Fabrication Technology”
98. Hard X-ray Focusing less than 50nm for Nanoscopy/spectroscopy
99. Fabrication of X-ray Mirror for Hard X-ray Diffraction Limited Nanofocusing
100. Surface Gradient Integrated Profiler for X-ray and EUV Optics—Calibration of the rotational angle error of the rotary encoders
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