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51. 14ns write speed 128Mb density Embedded STT-MRAM with endurance>1010 and 10yrs retention@85°C using novel low damage MTJ integration process

65. High thermal tolerance synthetic ferrimagnetic reference layer with modified buffer layer by ion irradiation for perpendicular anisotropy magnetic tunnel junctions.

66. Impact of Tungsten Sputtering Condition on Magnetic and Transport Properties of Double-MgO Magnetic Tunneling Junction With CoFeB/W/CoFeB Free Layer

72. Development of an RNA detection system using bioluminescence resonance energy transfer

74. RNA detection using peptide-inserted Renilla luciferase

80. Impact of sputtering condition for tungsten on magnetic and transport properties of magnetic tunneling junction with CoFeB/W/CoFeB free layer

82. Origin of variation of shift field via annealing at 400°C in a perpendicular-anisotropy magnetic tunnel junction with [Co/Pt]-multilayers based synthetic ferrimagnetic reference layer

83. Construction of intramolecular luciferase complementation probe for detecting specific RNA

85. Influence of hydrogen patterning gas on electric and magnetic properties of perpendicular magnetic tunnel junctions.

86. Trend of tunnel magnetoresistance and variation in threshold voltage for keeping data load robustness of metal-oxide-semiconductor/magnetic tunnel junction hybrid latches.

87. Design and fabrication of a perpendicular magnetic tunnel junction based nonvolatile programmable switch achieving 40% less area using shared-control transistor structure.

99. Improvement of Thermal Tolerance of CoFeB–MgO Perpendicular-Anisotropy Magnetic Tunnel Junctions by Controlling Boron Composition

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