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289 results on '"Ercolani, Daniele"'

52. Semiconductor nanowire field-effect transistors: towards high-frequency THz detector

Author

Manijeh Razeghi, M. S. Vitiello, D. Coquillat, F. Teppe, W. Knap, Alexei N. Baranov, Henry O. Everitt, John M. Zavada, Tariq Manzur, PITANTI, ALESSANDRO, ROMEO, LORENZO, ERCOLANI, Daniele, SORBA, LUCIA, TREDICUCCI, ALESSANDRO, Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), aavv, Manijeh, Razeghi, Pitanti, Alessandro, M. S., Vitiello, Romeo, Lorenzo, D., Coquillat, F., Teppe, W., Knap, Ercolani, Daniele, Sorba, Lucia, Tredicucci, Alessandro, Alexei N., Baranov, Henry O., Everitt, John M., Zavada, and Tariq, Manzur

Subjects
Materials science, Terahertz radiation, Nanowire, Semiconductor nanowires, 02 engineering and technology, 01 natural sciences, Capacitance, law.invention, chemistry.chemical_compound, Rectification, law, 0103 physical sciences, field effect transistors, 010306 general physics, business.industry, Transistor, 021001 nanoscience & nanotechnology, THz detectors, Semiconductor, chemistry, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, Field-effect transistor, Indium arsenide, 0210 nano-technology, business
Abstract

We report about fabrication and characterization of semiconductor nanowire-based field effect transistor devices which can act as detectors for electromagnetic radiation in the THz frequency range. The detection mechanism is based on the nonlinear transfer characteristic of the transistor, which is used to realize signal rectification; the small capacitance related to the nanowire small cross section is beneficial in allowing a good device sensitivity up to 1.5 THz at room temperature. Due to the extreme flexibility with which semiconductor nanowires can be grown, we discuss how the basic, homogeneous InAs or InSb nanowire FETs can be improved to realize smarter devices and functionalities.

Published
2012

53. Room temperature terahertz detectors based on semiconductor nanowire field effect transistors

Author

Manijeh Razeghi, Miriam S. Vitiello, Dominique Coquillat, Frederic Teppe, Wojciech Knap, Eric Tournie, Gail J. Brown, VITI, LEONARDO, ERCOLANI, Daniele, PITANTI, ALESSANDRO, BELTRAM, Fabio, SORBA, LUCIA, TREDICUCCI, ALESSANDRO, aavv, Manijeh, Razeghi, Miriam S., Vitiello, Dominique, Coquillat, Viti, Leonardo, Ercolani, Daniele, Frederic, Teppe, Pitanti, Alessandro, Beltram, Fabio, Sorba, Lucia, Wojciech, Knap, Tredicucci, Alessandro, Eric, Tournie, and Gail J., Brown

Subjects
Materials science, business.industry, Terahertz radiation, Transistor, Doping, Nanowire, Photodetector, law.invention, Semiconductor, law, Optoelectronics, Field-effect transistor, business, Diode
Abstract

The growth of semiconductor nanowires (NWs) has recently opened new paths to silicon integration of device families such as light-emitting diodes, high-efficiency photovoltaics, or high-responsivity photodetectors. It is also offering a wealth of new approaches for the development of a future generation of nanoelectronic devices. Here we demonstrate that semiconductor nanowires can also be used as building blocks for the realization of high-sensitivity terahertz detectors based on a 1D field-effect transistor configuration. In order to take advantage of the low effective mass and high mobilities achievable in III–V compounds, we have used InAs nanowires, grown by vapor-phase epitaxy, and properly doped with selenium to control the charge density and to optimize source–drain and contact resistance. The detection mechanism exploits the nonlinearity of the transfer characteristics: the terahertz radiation field is fed at the gate-source electrodes with wide band antennas, and the rectified signal is then rea...

Published
2012

54. Transport anisotropy in In0.75Ga0.25As two-dimensional electron gases induced by indium concentration modulation

Author

ERCOLANI, Daniele, CANCELLIERI, EMILIANO, CARILLO, Franco, SORBA, LUCIA, G. BIASIOL, M. ROSINI, C. JACOBONI, S. HEUN, F. NOLTING, Ercolani, Daniele, G., Biasiol, Cancellieri, Emiliano, M., Rosini, C., Jacoboni, Carillo, Franco, S., Heun, Sorba, Lucia, and F., Nolting

Subjects
STRAIN, GA0.25IN0.75AS/INP QUANTUM-WELLS, MOLECULAR-BEAM EPITAXY, HETEROSTRUCTURES, SCATTERING
Abstract

A pronounced anisotropy is observed in the low-temperature mobility of a two-dimensional electron gas formed in an In0.75Ga0.25As/In0.75Al0.75As quantum well grown on a GaAs substrate. We show that the mobility differences along [011] and [01 (1) over bar] directions are mainly due to In concentration modulations. Spatially resolved photoemission measurements show an asymmetric indium concentration modulation, correlated with the surface morphology observed by atomic force microscopy. A theoretical model considering conduction band energy modulations agrees well with the transport measurements. The identification of this mobility limiting mechanism allowed us to design and grow higher quality two-dimensional electron gases, needed for high indium content InGaAs device fabrication.

Published
2008

59. Gate-Tunable Spatial Modulation of Localized Plasmon Resonances

Author

Arcangeli, Andrea, primary, Rossella, Francesco, additional, Tomadin, Andrea, additional, Xu, Jihua, additional, Ercolani, Daniele, additional, Sorba, Lucia, additional, Beltram, Fabio, additional, Tredicucci, Alessandro, additional, Polini, Marco, additional, and Roddaro, Stefano, additional

Published
2016
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80. Room-temperature nanowire terahertz photodetectors

Author

Romeo, Lorenzo, primary, Coquillant, Dominique, additional, Viti, Leonardo, additional, Ercolani, Daniele, additional, Sorba, Lucia, additional, Knap, Wojciech, additional, Tredicucci, Alessandro, additional, and Vitiello, Miriam S., additional

Published
2013
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87. Growth of InAs/InAsSb heterostructured nanowires

Author

Ercolani, Daniele, primary, Gemmi, Mauro, additional, Nasi, Lucia, additional, Rossi, Francesca, additional, Pea, Marialilia, additional, Li, Ang, additional, Salviati, Giancarlo, additional, Beltram, Fabio, additional, and Sorba, Lucia, additional

Published
2012
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93. Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires

Author

Kriegner, Dominik, primary, Panse, Christian, additional, Mandl, Bernhard, additional, Dick, Kimberly A., additional, Keplinger, Mario, additional, Persson, Johan M., additional, Caroff, Philippe, additional, Ercolani, Daniele, additional, Sorba, Lucia, additional, Bechstedt, Friedhelm, additional, Stangl, Julian, additional, and Bauer, Günther, additional

Published
2011
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