635 results on '"Kato, Tomohisa"'
Search Results
52. Purification of gangliosides by liquid-liquid partition chromatography
53. Purification by centrifugal partition chromatography of amphiphilic compounds, glycolipids and pseudo-glycolipids synthesized by using cells
54. Gene cloning and characterization of an aldehyde dehydrogenase from long-chain alkane-degrading Geobacillus thermoleovorans B23
55. Mapping the hotspots for DNA repair synthesis in human brain organoids
56. Massive reduction of threading screw dislocations in 4H-SiC crystals grown by a hybrid method combined with solution growth and physical vapor transport growth on higher off-angle substrates
57. Effect of heat transfer on macroscopic and microscopic crystal quality in silicon carbide sublimation growth
58. Quality Verification with a Cluster−Controlled Manufacturing System to Generate Monocyte−Derived Dendritic Cells
59. Depth Distribution of Defects in SiC PiN Diodes Formed Using Ion Implantation or Epitaxial Growth.
60. Cooperative Reaction of Hydrogen-Networked Water Molecules at the SiC–H2O2 Solution Interface: Microscopic Insights from Ab Initio Molecular Dynamics.
61. Identification of CD56 dim subpopulation marked with high expression of GZMB/PRF1/PI‐9 in CD56 + interferon‐α‐induced dendritic cells
62. Simple physical model for the sign of the Hall coefficient in variable-range hopping conduction in heavily Al-doped p-type 4H-SiC
63. Immobilization of Partial Dislocations Bounding Double Shockley Stacking Faults in 4h-Sic Observed by in Situ Synchrotron X-Ray Topography
64. Analysis of groundwater inflow process along faults by resistivity surveys at the 2011 deep-seated landslide in Kuridaira, Totsukawa village, Nara prefecture, Japan
65. Vapor–liquid–solid growth of 4H-SiC single crystal films with extremely low carrier densities in chemical vapor deposition with a Pt–Si alloy flux and X-ray topography analysis of their dislocation propagation behaviors
66. Interferon-α-Induced Dendritic Cells Generated with Human Platelet Lysate Exhibit Elevated Antigen Presenting Ability to Cytotoxic T Lymphocytes
67. Nondestructive measurements of depth distribution of carrier lifetimes in 4H–SiC thick epitaxial layers using time-resolved free carrier absorption with intersectional lights
68. Corrigendum: “Sign of Hall coefficient in nearest-neighbor hopping conduction in heavily Al-doped p-type 4H-SiC” [Jpn. J. Appl. Phys. 59, 051004 (2020)]
69. 20 kV-Class Ultra-High Voltage 4H-SiC n-IE-IGBTs
70. Anomalous Temperature Dependence of the Hall Coefficient of Heavily Al-Doped 4H-SiC Epilayers in the Band Conduction Region
71. Non-Plasma Dry Etcher Design for 200 mm-Diameter Silicon Carbide Wafer
72. Formation of Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Reduction of Residual Stress around Scratch Damage
73. Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC
74. Etching Rate Profile of C-Face 4H-SiC Wafer Depending on Total Gas Flow Rate of Chlorine Trifluoride and Nitrogen
75. Sign of Hall coefficient in nearest-neighbor hopping conduction in heavily Al-doped p-type 4H-SiC
76. High Throughput SiC Wafer Polishing with Good Surface Morphology
77. Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping
78. Influence of Micropipe and Domain Boundary in SiC Substrate on the DC Characteristics of AlGaN/GaN HFET
79. Investigation of In-Grown Dislocations in 4H-SiC Epitaxial Layers
80. Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystals
81. Effects of Dislocations on Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer
82. Pro-apoptotic effect of the c-Abl tyrosine kinase in the cellular response to 1-β-D-arabinofuranosylcytosine
83. Negative regulation of constitutive NF-κB and JNK signaling by PKN1-mediated phosphorylation of TRAF1
84. Involvement of protein kinase PKN1 in G2/M delay caused by arsenite
85. CK2 Is a C-Terminal IκB Kinase Responsible for NF-κB Activation during the UV Response
86. Dendritic Cells Pre-Pulsed with Wilms’ Tumor 1 in Optimized Culture for Cancer Vaccination
87. Low V F 4H-SiC N-i-P diodes using newly developed low-resistivity p-type substrates
88. Temperature Dependence of Double Shockley Stacking Fault Behavior in Nitrogen-Doped 4h-Sic Studied by In-Situ Synchrotron X-Ray Topography
89. A Case of Pyogenic Granuloma in the Hypopharynx
90. RND type efflux pump system MexAB-OprM of pseudomonas aeruginosa selects bacterial languages, 3-oxo-acyl-homoserine lactones, for cell-to-cell communication
91. Etching Rate Behavior of 4H-Silicon Carbide Using Chlorine Trifloride Gas
92. Transition of conduction mechanism from band to variable-range hopping conduction due to Al doping in heavily Al-doped 4H-SiC epilayers
93. Application of Defect Conversion Layer by Solution Growth for Reduction of TSDs in 4H-SiC Bulk Crystals by PVT Growth
94. Initiation of Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diodes
95. Chlorine Trifluoride Gas Distributor Design for Single-Crystalline C-Face 4H-Silicon Carbide Wafer Etcher
96. Relationship between Temperature Dependencies of Resistivity and Hall Coefficient in Heavily Al-Doped 4H-SiC Epilayers
97. Relationship between depth of basal-plane dislocations and expanded stacking faults by application of forward current to 4H–SiC p-i-n diodes
98. Effect of Radiation in Solid during SiC Sublimation Growth
99. Alkane inducible proteins in Geobacillus thermoleovorans B23
100. New Crucible Design for SiC Single Crystal Growth by Sublimation
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.