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729 results on '"Liu, Xingpeng"'

73. Uncertainty Reduction in Flood Susceptibility Mapping Using Random Forest and eXtreme Gradient Boosting Algorithms in Two Tropical Desert Cities, Shibam and Marib, Yemen.

Author

Al-Aizari, Ali R., Alzahrani, Hassan, AlThuwaynee, Omar F., Al-Masnay, Yousef A., Ullah, Kashif, Park, Hyuck-Jin, Al-Areeq, Nabil M., Rahman, Mahfuzur, Hazaea, Bashar Y., and Liu, Xingpeng

Subjects
BOOSTING algorithms, CITIES & towns, FLOOD warning systems, RANDOM forest algorithms, RECEIVER operating characteristic curves, NATURAL disasters, FLOODS
Abstract

Flooding is a natural disaster that coexists with human beings and causes severe loss of life and property worldwide. Although numerous studies for flood susceptibility modelling have been introduced, a notable gap has been the overlooked or reduced consideration of the uncertainty in the accuracy of the produced maps. Challenges such as limited data, uncertainty due to confidence bounds, and the overfitting problem are critical areas for improving accurate models. We focus on the uncertainty in susceptibility mapping, mainly when there is a significant variation in the predictive relevance of the predictor factors. It is also noted that the receiver operating characteristic (ROC) curve may not accurately depict the sensitivity of the resulting susceptibility map to overfitting. Therefore, reducing the overfitting problem was targeted to increase accuracy and improve processing time in flood prediction. This study created a spatial repository to test the models, containing data from historical flooding and twelve topographic and geo-environmental flood conditioning variables. Then, we applied random forest (RF) and extreme gradient boosting (XGB) algorithms to map flood susceptibility, incorporating a variable drop-off in the empirical loop function. The results showed that the drop-off loop function was a crucial method to resolve the model uncertainty associated with the conditioning factors of the susceptibility modelling and methods. The results showed that approximately 8.42% to 9.89% of Marib City and 9.93% to 15.69% of Shibam City areas were highly vulnerable to floods. Furthermore, this study significantly contributes to worldwide endeavors focused on reducing the hazards linked to natural disasters. The approaches used in this study can offer valuable insights and strategies for reducing natural disaster risks, particularly in Yemen. [ABSTRACT FROM AUTHOR]

Published
2024
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88. 对称破缺二聚体混合结构高Q圆二色性

Author

Xiao Gongli, 肖功利, primary, Zhou Sitong, 周嗣童, additional, Yang Hongyan, 杨宏艳, additional, Lai Zifan, 赖子凡, additional, Chen Jiayu, 陈佳宇, additional, Li Haiou, 李海鸥, additional, Liu Xingpeng, 刘兴鹏, additional, and Chen Zanhui, 陈赞辉, additional

Published
2023
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94. Ultra‐thin Body Buried In 0.35 Ga 0.65 As Channel MOSFETs with Extremely Low Off‐current on Si Substrates

Author

Feng Ruize, Ding Peng, Sun Tangyou, Zhang Wei, Jin Zhi, Li Qi, Liu Yingbo, Li Haiou, Zhao Hao, Wang Yanfu, Wang Bo, Liu Xiaoyu, Chen Yonghe, Li Yue, Yin Yihui, and Liu Xingpeng

Subjects
Ultra thin body, Materials science, business.industry, Wafer bonding, Annealing (metallurgy), Applied Mathematics, Gate stack, chemistry.chemical_element, chemistry, Trap density, Optoelectronics, Electrical and Electronic Engineering, Current (fluid), business, Indium, Communication channel
Abstract

In this paper, we investigated the electrical properties of the Metal-oxide-semiconductor gate stack of Ti/Al2O3/InP under different annealing conditions. A minimum interface trap density of 3×1011cm-2eV-1 is obtained without postmetallization annealing treatment. Additionally, utilizing Ti/Al2O3/InP MOS gate stack, we fabricated ultra-thin body buried In0.35Ga0.65As channel MOSFETs on Si substrates with optimized on/off trade-off. The 200nm gate length device with extremely low off-current of 0.6nA/µm, and on-off ratio of 3.3×105, is demonstrated by employing buried low indium (In0.35Ga0.65As) channel with InP barrier/spacer device structure, giving strong potential for future highperformance and low-power applications.

Published
2021

95. Band-gap tunable (GaxIn1−x)2O3 layer grown by magnetron sputtering

Author

Juan Zhou, Haiou Li, Jinyu Sun, Xianghu Wang, Qi Li, Sun Tangyou, Liu Xingpeng, Daoyou Guo, Gongli Xiao, Zujun Qin, Fu Tao, Fabi Zhang, Xiuyun Zhang, and Rong Wang

Subjects
Materials science, Computer Networks and Communications, Band gap, business.industry, Sputter deposition, Blueshift, Hardware and Architecture, Signal Processing, Transmittance, Sapphire, Optoelectronics, Electrical and Electronic Engineering, Thin film, business, Absorption (electromagnetic radiation), Monoclinic crystal system
Abstract

Multicomponent oxide (GaxIn1−x)2O3 films are prepared on (0001) sapphire substrates to realize a tunable band-gap by magnetron sputtering technology followed by thermal annealing. The optical properties and band structure evolution over the whole range of compositions in ternary compounds (GaxIn1−x)2O3 are investigated in detail. The X-ray diffraction spectra clearly indicate that (GaxIn1−x)2O3 films with Ga content varying from 0.11 to 0.55 have both cubic and monoclinic structures, and that for films with Ga content higher than 0.74, only the monoclinic structure appears. The transmittance of all films is greater than 86% in the visible range with sharp absorption edges and clear fringes. In addition, a blue shift of ultraviolet absorption edges from 380 to 250 nm is noted with increasing Ga content, indicating increasing band-gap energy from 3.61 to 4.64 eV. The experimental results lay a foundation for the application of transparent conductive compound (GaxIn1−x)2O3 thin films in photoelectric and photovoltaic industry, especially in display, light-emitting diode, and solar cell applications.

Published
2021

100. Efficacy of ablation index‐guided pulmonary vein isolation in patients with paroxysmal atrial fibrillation

Author

Jiang, Ruhong, primary, Chen, Minglong, additional, Fan, Jie, additional, Yi, Fu, additional, Tang, Anli, additional, Liu, Xingpeng, additional, Zhu, Wenqing, additional, Liu, Shaowen, additional, Huang, Xiaobo, additional, Liu, Qiang, additional, Ju, Weizhu, additional, Zhang, Xi, additional, Li, Jie, additional, He, Jiangui, additional, Shi, Liang, additional, Zhou, Genqing, additional, Wang, Yuegang, additional, Fu, Guosheng, additional, and Jiang, Chenyang, additional

Published
2022
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