51. Towards the Fabrication of High-Aspect-Ratio Silicon Gratings by Deep Reactive Ion Etching
- Author
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Marco Stampanoni, Lucia Romano, Konstantins Jefimovs, and Zhitian Shi
- Subjects
Fabrication ,Materials science ,Silicon ,lcsh:Mechanical engineering and machinery ,chemistry.chemical_element ,02 engineering and technology ,Grating ,X-ray grating interferometry ,Aspect ratio dependent etching (ARDE) ,X-ray energy range ,01 natural sciences ,Article ,Etching (microfabrication) ,0103 physical sciences ,Deep reactive-ion etching ,lcsh:TJ1-1570 ,Electrical and Electronic Engineering ,aspect ratio dependent etching (ARDE) ,010302 applied physics ,Range (particle radiation) ,business.industry ,Mechanical Engineering ,021001 nanoscience & nanotechnology ,Aspect ratio (image) ,Chamber pressure ,chemistry ,Control and Systems Engineering ,Optoelectronics ,0210 nano-technology ,business - Abstract
The key optical components of X-ray grating interferometry are gratings, whose profile requirements play the most critical role in acquiring high quality images. The difficulty of etching grating lines with high aspect ratios when the pitch is in the range of a few micrometers has greatly limited imaging applications based on X-ray grating interferometry. A high etching rate with low aspect ratio dependence is crucial for higher X-ray energy applications and good profile control by deep reactive ion etching of grating patterns. To achieve this goal, a modified Coburn&ndash, Winters model was applied in order to study the influence of key etching parameters, such as chamber pressure and etching power. The recipe for deep reactive ion etching was carefully fine-tuned based on the experimental results. Silicon gratings with an area of 70 ×, 70 mm2, pitch size of 1.2 and 2 &mu, m were fabricated using the optimized process with aspect ratio &alpha, of ~67 and 77, respectively.
- Published
- 2020