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In this paper we review the recent developments in the nanophotonic platform IMOS. High-performance optical amplifier based on twin-guide active-passive integration scheme has been demonstrated, enabling continuous wave operated lasers on IMOS. Future work will seek to integrate more advanced components, such as $> \mathrm{67GHz}$ detectors, polarization controllers and optical modulators in the same membrane.

We present the first-time application of rule-based optical proximity correction for InP based photonic integrated circuits fabricated with 193 nm deep UV lithography. Simulations of the lithography process were used to systematically predict and preserve pattern fidelity of sidewall gratings to find optimal correction parameters. Optical proximity corrected designs were exposed in ArF resist, demonstrating high correlation with lithography simulation results and exhibiting up to 70% improved pattern fidelity.

Area-selective atomic layer deposition (ALD) of ZnO was achieved on SiO2 seed layer patterns on H-terminated silicon substrates, using diethylzinc (DEZ) as the zinc precursor and H2O as the coreactant. The selectivity of the ALD process was studied using in situ spectroscopic ellipsometry and scanning electron microscopy, revealing improved selectivity for increasing deposition temperatures from 100 to 300 °C. The selectivity was also investigated using transmission electron microscopy and energy-dispersive X-ray spectroscopy. Density functional theory (DFT) calculations were performed to corroborate the experimental results obtained and to provide an atomic-level understanding of the underlying surface chemistry. A kinetically hindered proton transfer reaction from the H-terminated Si was conceived to underpin the selectivity exhibited by the ALD process. By combining the experimental and DFT results, we suggest that the trend in selectivity with temperature may be due to a strong DEZ or H2O physisorption on the H-terminated Si that hampers high selectivity at low deposition temperature. This work highlights the deposition temperature as an extra process parameter to improve the selectivity.

An application study into irregular sparse arrays (ISAs) is proposed to function as base station antennas (BSAs) in a mm-wave multi-user multiple-input multiple-output (MU-MIMO) system. The results show that the sum rate capacity of ISAs can be increased relative to regularly-spaced BSA arrays with half a wavelength element separation, especially for a high number of users. This is due to the narrower beams formed by the larger antenna apertures of sparse arrays. Furthermore, the aperiodic distribution of antenna elements alleviates the problem of grating lobes in sparse arrays and is seen to improve the average power consumption of power amplifiers at the same time.

Indium Phosphide integrated photonics enables the combination of high-speed lasers and modulators with filters, detectors and multiplexers in one wafer-scale process flow. Low-voltage modulation at rates of 50Gigabit/second and above are feasible with combinations of semi-insulating substrates, optimised multi-quantum wells and high-speed electrical design. Advances in monolithic InP platform technologies have created a mechanism to rapidly introduce such high performance building blocks into sophisticated integration processes, enabling photonic integrated circuits with many tens of active components including distributed feedback lasers, tunable lasers and a range of passsive components. Our recent introduction of 192nm deep UV scanner lithography - believed to be a world first for InP integrated photonics - also enables a step change in the performance for the integrated filters and mode control. In this paper, we present recent innovations in the creation of high performance transceiver technologies for optical interconnects. We showcase circuits using InP integrated photonics to create high-speed, energy-efficient, optically-multiplexed circuits. Monolithic polarization multiplexing and wavelength domain multiplexing are reviewed where all components, inclusive of the lasers, are created in the same wafer. Line-rates of up to 320 Gb/s are demonstrated for optically multiplexed circuits using a variety of open access fabrication platforms. The challenges and approaches for Terabit/second class transceiver chips will be addressed, addressing crosstalk management, component miniaturisation, and intimate electronic integration.

Quantum photonic integrated circuits (QPICs) on a GaAs platform allow the generation, manipulation, routing, and detection of non-classical states of light, which could pave the way for quantum information processing based on photons. In this article, the prototype of a multi-functional QPIC is presented together with our recent achievements in terms of nanofabrication and integration of each component of the circuit. Photons are generated by excited InAs quantum dots (QDs) and routed through ridge waveguides towards photonic crystal cavities acting as filters. The filters with a transmission of 20% and free spectral range ≥66 nm are able to select a single excitonic line out of the complex emission spectra of the QDs. The QD luminescence can be measured by on-chip superconducting single photon detectors made of niobium nitride (NbN) nanowires patterned on top of a suspended nanobeam, reaching a device quantum efficiency up to 28%. Moreover, two electrically independent detectors are integrated on top of the same nanobeam, resulting in a very compact autocorrelator for on-chip g(2)(τ) measurements.

Hydrogen-doped indium oxide (In2O3:H) has emerged as a highly transparent and conductive oxide, finding its application in a multitude of optoelectronic devices. Recently, we have reported on an atomic layer deposition (ALD) process to prepare high quality In2O3:H. This process consists of ALD of In2O3:H films at 100 °C, followed by a solid phase crystallization step at 150–200 °C. In this work, we report on a detailed electron microscopy study of this crystallization process which reveals new insights into the crucial aspects for achieving the large grain size and associated excellent properties of the material. The key finding is that the best optoelectronic properties are obtained by preparing the films at the lowest possible temperature prior to post-deposition annealing. Electron microscopy imaging shows that such films are mostly amorphous, but feature a very low density of embedded crystallites. Upon post-deposition annealing, crystallization proceeds merely from isotropic crystal grain growth of these embedded crystallites rather than by the formation of additional crystallites. The relatively high hydrogen content of 4.2 at. % in these films is thought to cause the absence of additional nucleation, thereby rendering the final grain size and optoelectronic properties solely dependent on the density of embedded crystallites. The temperature-dependent grain growth rate has been determined, from which an activation energy of (1.39 ± 0.04) eV has been extracted. Finally, on the basis of the observed crystallization mechanism, a simple model to fully describe the crystallization process has been developed. This model has been validated with a numerical implementation thereof, which accurately predicts the observed temperature-dependent crystallization behaviour.

The modal mu-calculus mu-L is a well-known fixpoint logic to express and model check properties interpreted over labeled transition systems. In this paper, we propose two variants of the mu-calculus, mu-Lf and mu-Lf', for feature transition systems. For this, we explicitly incorporate feature expressions into the logics, allowing operators to select transitions and behavior restricted to specific products and subfamilies. We provide semantics for mu-Lf and mu-Lf' and relate the two new mu-calculi and mu-L to each other. Next, we focus on the analysis of SPL behavior and show how our formalism can be applied for product-based verification with mu-Lf as well as family-based verification with mu-Lf'. We illustrate by means of a toy example how properties can be model checked, exploiting an embedding of mu-Lf' into the mu-calculus with data., Comment: In Proceedings FMSPLE 2016, arXiv:1603.08577

We introduce an alternative type of probe for scanning tunneling microscopy (STM). Instead of using a needle-like tip made from a piece of metallic wire, a sharp-edged cleaved insulating substrate, which is initially covered by a thin conductive film, is used. The sharp tip is formed at the intersection of the two cleaved sides. Using this approach a variety of materials for STM probes can be used, and functionalization of STM probes is possible. The working principle of different probes made of metallic (Pt, Co, and CoB), indium-tin oxide, as well as Cu/Pt and Co/Pt multilayer films are demonstrated by STM imaging of clean Cu(001) and Cu(111) surfaces as well as the epitaxial Co clusters on Cu(111).

In this paper, we present significant reductions of optical losses and contact resistances in AgGe-based ohmic contacts to InP membranes. Due to the high solubility of Si in InGaAs and InGaAsP, heavily doped n-type contact layers are grown on InP wafers. This high doping concentration gives rise to annealing-free ohmic contacts and low contact resistances at the level of $10^{-7}\ \Omega\ \textrm{cm}^{2}$ . It also leads to strong band-filling effects in InGaAs and InGaAsP, which result in low optical absorption losses in the contact layer. Combined with the low optical loss of AgGe, a massive reduction of the propagation loss in membrane waveguides is observed compared with other existing solutions. An additional advantage is the minimal influence of thermal treatments during the processing, leading to very stable high-performing contacts.

Recent advances in MEMS technology have brought forward a new class of high-density stretchable/flexible electronics as well as large displacement MEMS devices. The in-situ electro-mechanical characterization of such devices is challenging since it requires: (i) highly delicate sample handling, (ii) controlled application of large (hundreds of µm) multi-axial displacements to mimic service conditions, (iii) integrated electrical testing and (iv) fast actuation for cyclic testing. Techniques already developed for small-scale testing in literature fall short to meet the combined set of requirements. To this end, a characterization methodology that fulfills all these requirements is developed and presented here. The technique is based on a piezo-driven micro-tensile stage, which provides large multi-axial displacements with high resolution and fast actuation (4000 µm/s). This is combined with a method for sample microfabrication on a test-chip to warrant delicate sample handling. Proof-of-principle experiments are shown for multi-axial mechanical characterization, electrical characterization and high cycle fatigue testing of micron-sized highly stretchable interconnects. Experiments are conducted under in-situ microscopic observation using optical microscopy, scanning electron microscopy, and high-resolution profilometry. The generic platform proposed here can be used for other problems where similar requirements are faced, e.g. other miniaturized, large displacement electro-mechanical applications that are currently being developed.

Miniaturization of displacement sensors for nanoscale metrology is a key requirement in many applications such as accelerometry, mass sensing, and atomic force microscopy. While optics provides high resolution and bandwidth, integration of sensor readout is required to achieve low-cost, compact, and parallelizable devices. Here, we present a novel integrated opto-electro-mechanical device for displacement sensing that has sub-nanometer resolution. The proposed sensor is a micron-sized double-membrane photonic crystal cavity with integrated electro-optical readout, directly addressed via an on-chip waveguide. This sensor displays a noise floor down to 7 fm/Hz and is suitable for the realization of integrated arrays.

An array of monolithic wide-tunable lasers is integrated using selective area growth to shift the bandgap of their gain section. A gap-free tuning is demonstrated from the combination of the tuning ranges of the lasers, and single-mode operation is verified.

Selective area growth is used for the first time in the TU/e generic integration platform to modify independently the bandgap of active sections. A chip combining 4 tunable lasers with shifted wavelength ranges has been fabricated. A 96 nm wide tuning range is demonstrated.

Photonic integrated circuit (PIC) platforms are in continuous development to offer higher performance and increased functionality. Through an open innovation model for photonics, developments for next technology nodes can be carried out within a collaborative framework. As an example, we present a case in which we develop low loss radio-frequency interconnects for an InP foundry partner. The technology development is expected to enable high modulation data rates using a generic PIC platform.

We experimentally demonstrate the control over the emission of quantum dots embedded in photonic molecules via mode field modulation. By locally changing the cavity frequencies we control, and even suppress, spontaneous emission.

A negatively-chirped InP-MZM modulated by a 1-Vpp PAM4 signal enables 112Gbit/s/λ data transmission with reduced digital processing complexity. SSMF-links longer than 3-km (KP4-preFEC) or 4-km (HD-preFEC) without digital dispersion pre/post compensation are successfully demonstrated.

ArF deep UV (193 nm) lithography was successfully applied to fabricate Arrayed Waveguide Gratings in generic Indium Phosphide technology. The sub-dB transmission losses demonstrate the advantages of scaling down the minimum feature size to 100 nm.

Quantum dots (QDs) interacting with confined light fields in photonic crystal cavities represent a scalable light source for the generation of single photons and laser radiation in the solid-state platform. The complete control of light-matter interaction in these sources is needed to fully exploit their potential, but it has been challenging due to the small length scales involved. In this work, we experimentally demonstrate the control of the radiative interaction between InAs QDs and one mode of three coupled nanocavities. By non-locally moulding the mode field experienced by the QDs inside one of the cavities, we are able to deterministically tune, and even inhibit, the spontaneous emission into the mode. The presented method will enable the real-time switching of Rabi oscillations, the shaping of the temporal waveform of single photons, and the implementation of unexplored nanolaser modulation schemes.

The influence of the use of on-wafer probes for mm-wave antenna-on-chip (AoC) measurements is investigated. On-wafer probes are widely used for analyzing integrated circuits. Although not specifically designed for this, on-wafer probes are also commonly used to characterize AoCs. The probe design provided a transition from coaxial cable to co-planar waveguide. As a test case, a monopole AoC is used to demonstrate several effects that influence an accurate calibration of the test set-up. It is shown that on-chip calibration is preferred and provides more accurate de-embedding of parasitic effects. In addition, it is shown that the polarization purity is seriously affected by the coupling between AoC and probe tip.

Ultracompact optical submodules for parallel optical interconnects are demonstrated based on a three-level silicon interposer, which is fabricated through a low-cost wet etching process. Using three steps of wet etching of silicon, a multilevel cavity is formed for embedding and flip-chipping optical and electrical dies, and opening optical through-silicon vias. In order to reduce thermal coupling between CMOS and GaAs dies, a 50- $\mu \text{m}$ thermal isolation air gap is formed between dies as a part of the assembly concept, and thermal simulations and experiments are carried to validate its effectiveness. Based on this 3-D packaging concept, compact 4 mm $\times6$ mm, 10-Gb/s 12-channel transmitter and receiver submodules are fully assembled and tested. Clear and uniform eye patterns for both modules are captured at 10 and 15 Gb/s for every channel. Bit error rate (BER) testing is also performed. Both transmitter and receiver submodules show uniform BER curves, with receiver sensitivity spreading less than 1 dB at a BER lower than 10−12. Also, crosstalk for both modules is tested, yielding only a 0.1- and 0.8-dB additional penalty for transmitter and receiver, respectively.

Actively controlling the properties of localized optical modes is crucial for cavity quantum electrodynamics experiments. While several methods to tune the optical frequency have been demonstrated, the possibility of controlling the shape of the modes has scarcely been investigated. Yet an active manipulation of the mode pattern would allow direct control of the mode volume and the quality factor and therefore of the radiative processes. In this work, we propose and demonstrate a nano-optoelectromechanical device in which a mechanical displacement affects the spatial pattern of the electromagnetic field. The device is based on a double-membrane photonic crystal waveguide which, upon bending, creates a spatial modulation of the effective refractive index, resulting in an effective potential well or antiwell for the optical modes. The change in the field pattern drastically affects the optical losses: large modulations of the quality factors and dissipative coupling rates larger than 1 GHz/nm are predicted by calculations and confirmed by experiments. This concept opens new avenues in solid-state cavity quantum electrodynamics in which the field, instead of the frequency, is coupled to the mechanical motion.

We present finite difference thermal modeling to predict temperature distribution, heat flux, and thermal resistance inside lasers with different waveguide geometries. We provide a quantitative experimental and theoretical comparison of the thermal behavior of shallow-ridge (SR) and buried-heterostructure (BH) lasers. We investigate the influence of a split heat source to describe p-layer Joule heating and nonradiative energy loss in the active layer and the heat-sinking from top as well as bottom when quantifying thermal impedance. From both measured values and numerical modeling we can quantify the thermal resistance for BH lasers and SR lasers, showing an improved thermal performance from 50K/W to 30K/W for otherwise equivalent BH laser designs.

Displacement sensing at the nanoscale is required in many applications, including accelerometry, mass sensing and atomic force microscopy. Miniaturization of the sensing elements and integration of the read-out is key in achieving low cost, high resolution and high speed. Here, we present a novel integrated nano-opto-electro-mechanical device which potentially has subnanometer resolution for displacement sensing. The proposed device is a waveguide-coupled, micron-sized, double membrane photonic crystal cavity with integrated electro-optical read-out on a single chip.

A device for studying the mechanical and electrical behavior of free-standing microfabricated metal structures, subjected to a very large deformation, is presented in this paper. The free-standing structures are intended to serve as interconnects in high-density, highly stretchable electronic circuits. For an easy, damage-free handling and mounting of these free-standing structures, the device is designed to be fabricated as a single chip/unit that is separated into two independently movable parts after it is fixed in the tensile test stage. Furthermore, the fabrication method allows for test structures of different geometries to be easily fabricated on the same substrate. The utility of the device has been demonstrated by stretching the free-standing interconnect structures in excess of 1000% while simultaneously measuring their electrical resistance. Important design considerations and encountered processing challenges and their solutions are discussed in this paper.

A compact and light-weight wearable haptic glove (ExoTen-Glove) based on Twisted String Actuation (TSA) system is presented in this paper. The proposed system uses two actuators with small size DC motors and an integrated force sensor based on optoelectronic components. ExoTen-Glove can provide force feedback to the thumb on one side, and to the other fingers grouped together on the other side. This configuration has been selected to provide the user force feedback during the execution of grasping tasks by means of a virtual reality environment to feel the stiffness of different objects. Thus for the first evaluation of the ExoTen-Glove, we only focus on the feedback from thumb and index finger. The paper reports the design of the haptic glove, the description of the actuation system, the embedded controller, and the preliminary experimental evaluation of the device. The ExoTen-Glove has been evaluated by means of a simple experiment in virtual environment with 2-DOF grasping activities of rigid and compliant virtual object (spring) using thumb and index finger to show the applicability of the system for rehabilitation and haptic feedback purposes. Results of the experiments showed that the haptic ExoTen-Glove improved stiffness evaluation significantly for the high and low spring stiffness and users were able to distinguish virtual spring stiffness differences easily with high accuracy.

The solar energy conversion efficiency of photoelectrochemical (PEC) devices is usually limited by poor interface energetics, limiting the onset potential, and light reflection losses. Here, a three-pronged approach to obtain excellent performance of an InP-based photoelectrode for water reduction is presented. First, a buried p-n+ junction is fabricated, which shifts the valence band edge favorably with respect to the hydrogen redox potential. Photoelectron spectroscopy substantiates that the shift of the surface photovoltage is mainly determined by the buried junction. Second, a periodic array of InP nanopillars is created at the surface of the photoelectrode to substantially reduce the optical reflection losses. This device displays an unprecedented photocathodic power-saved efficiency of 15.8% for single junction water reduction. Third, a thin TiO2 protection layer significantly increases the stability of the InP-based photoelectrode. Careful design of the interface energetics based on surface photovoltage spectroscopy allows obtaining a PEC cell with stable record performance in water reduction. The efficiency of photoelectrochemical (PEC) water splitting devices is usually limited by interface energetics mismatch between the semiconductor and the electrolyte and insufficient light absorption. The highest photocathodic power-saved efficiency of 15.8% reported so far for single junction PEC water reduction is obtained through interface energetics design and photon management of an InP-based photoelectrode.

Integrated polarization converters (PCs) with high (>99%) conversion efficiency open up many new possibilities in an InP-based photonic integrated circuit. In this paper, we describe how such a PC can be added to a circuit containing semiconductor optical amplifiers (SOAs), in order to obtain polarization independent amplification. Polarization independence is obtained by placing the PC halfway between two identical SOA sections. This approach has the advantage that no compromises in design and fabrication are needed. The polarization conversion is found to be very high, above 99.5%, when using a tolerant two-section PC. The extra insertion loss due to the converter is below 0.5 dB. The polarization-dependent gain (PDG) of the SOA reduces from 17 dB to only 0.3 dB by the inclusion of the PC. This is comparable to the best PDG values found in the literature with other techniques. The reduction is achieved over the whole C-band and for varying pump currents.

In this paper we present a novel single-step RIE process for InP membrane optical waveguide etching. The optimization of the process is focused on the sidewall verticality and surface roughness of the etched profile. Significant improvement on the etched profile is achieved for the first time in a single-step RIE process. Loss measurement on fabricated membrane waveguides etched with the proposed RIE process results in a record low waveguide propagation loss (2.5 dB/cm).

We report a novel type of monolithically integrated tunable semiconductor laser. The tuning is achieved by three intracavity Mach–Zehnder interferometers, realized in passive waveguides and using voltage-controlled electro-optic phase modulators requiring only four control voltages. The potential of the design is demonstrated by a realized laser system that shows an optical linewidth of 363 kHz, output power of 3 mW, and a record tuning range of 74.3 nm. Such a continuous wavelength span is in excess of any monolithic semiconductor laser reported up to date. Precision of the tuning mechanism is demonstrated by a scan over a 0.89-GHz-wide absorption line of acetylene. The laser design is suitable for a number of applications, including gas spectroscopy, telecommunication, and optical coherence tomography. The laser has been fabricated in a multi-project wafer run on an indium phosphide-based generic photonic foundry platform and demonstrates the potential of these technology platforms.

Charge transport in disordered organic semiconductors, which is governed by incoherent hopping between localized molecular states, is frequently studied using a mean-field approach. However, such an approach only considers the time-averaged occupation of sites and neglects the correlation effect resulting from the Coulomb interaction between charge carriers. Here, we study the charge transport in unipolar organic devices using kinetic Monte Carlo simulations and show that the effect of Coulomb correlation is already important when the charge-carrier concentration is above ${10}^{\ensuremath{-}3}$ per molecular site and the electric field is smaller than ${10}^{8}$ V/m. The mean-field approach is then no longer valid, and neglecting the effect can result in significant errors in device modeling. This finding is supported by experimental current density-voltage characteristics of ultrathin sandwich-type unipolar poly(3-hexylthiophene) (P3HT) devices, where high carrier concentrations are reached.

The polarization filter that is presented in this publication is based on a narrow deep etched waveguide. The measured suppression of the TE mode is 20 dB. The achieved bandwidth is larger than 130nm (limited by the setup). The filter width for an operating range around 1550 nm is 0.5 μm

Thermotropic smectic liquid crystalline polymers were used as a scaffold to create organic/inorganic hybrid layered nanomaterials. Different polymers were prepared by photopolymerizing blends of a hydrogen bonded carboxylic acid derivative and a 10 % cross-linker of variable length in their liquid crystalline phase. Nanopores with dimensions close to 1 nm were generated by breaking the hydrogen bonded dimers in a high pH solution. The pores were filled with positively charged silver (Ag) ions, resulting in a layered silver(I)-polymeric hybrid material. Subsequent exposure to a NaBH4 reducing solution allowed for the formation of supported hybrid metal/organic films. In the bulk of the film the dimension of the Ag nanoparticles (NPs) was regulated with subnanometer precision by the cross-linker length. Ag nanoparticles with an average size of 0.9, 1.3, and 1.8 nm were produced inside the nanopores thanks to the combined effect of spatially confined reduction and stabilization of the nanoparticles by the polymer carboxylic groups. At the same time, strong Ag migration occurred in the surface region, resulting in the formation of a nanostructured metallic top layer composed of large (10–20 nm) NPs.

InP PIC technologies offer unsurpassed optoelectronic performance and are a key enabler for high-performance optical transceivers. InP lasers are the default solution for the communications lasers operating in the 1300–1600 nm wavelength window. As integration technologies continue to mature and information rates scale up, increasingly sophisticated monolithic techniques are deployed for both discrete devices and integrated circuits for longer-reach networking and higher data rates. The possibility to engineer the band gap across the wafer delivers a rich range of functions in an ever-decreasing footprint. Lasers are combined with additional devices such as modulators, multiplexers, detectors and hybrids within the same chip. Wafer scale production offers a proven route to cost-effective, high-volume production. Monolithic integration reduces cost through reduced test time and simplified assembly and packaging. This chapter reviews the techniques, capabilities and future potential for InP-integrated photonics with a particular reference to requirements in the rapidly evolving data interconnect market, driven in particular by data centres, where energy efficiency, bandwidth and volume production are crucial.

The potential of structuring thermoplastic polymers by convection only, using a combination of static mixer elements, which easily produce stratified structures with thousands of layers, and the black box concept that serves to elegantly combine materials in standard co-extrusion technology is investigated. The aim is to obtain an alternative for routes that try to structure organic matter such as polymers down to submicrometer levels, usually via self-organization based on phase separation. Structure is characterized by its complexity, here defined by the level of hierarchy. Horizontal stratification, parallel to the surface, is level 0. Vertical stratification connected to horizontal surface layers, is level 1. A series of horizontal stratifications in distinct places vertically connected to the surface layers is level 2. Higher levels of hierarchy finally result in dendritic structures that are fractal. Applications of complex structures with a huge interface and guaranteed cocontinuity throughout the whole cross section of the products are found in, for example, membranes for fuel cells and gas separators, and in miniaturizing electronic and optical devices such as photovoltaic cells. (Figure presented.).

In this paper, we propose a novel way for 3D packaging of optical and electrical dies for parallel optical interconnections based on wet etched silicon interposer. The process flow of silicon interposer fabrication is demonstrated. Through three steps of deeply wet etching of silicon, a multi-level cavity is formed for embedding and flip-chipping of optical die and electrical die, and the optical through silicon vias for optical I/Os are opened. After flip chip bonding, a designed 50 µm air gap is formed between electronics and optics for thermal isolation. The heat transfer is also simulated to validate the thermal isolation air gap between dies. After fabricating, a 10 Gbps 12-channel receiver is assembled on the silicon interposer, and the sub-module is scaled down to 4 mm by 6 mm. The performance of the fully assembled sub-module is tested on a probe station. Clear eye patterns are captured for each channel. Bit error rate (BER) testing is also performed showing uniform BER with performance matching that of commercial MM receiver.

The indium phosphide (InP) photonic integrated circuit (PIC) industry has been offering sensing solutions on a chip, with high precision and low cost. The major application is sensor signal read-out. Its next generation, where the InP PICs are much smaller and faster, enables new sensing opportunities. We review our recent developments in the next-generation InP PIC, and discuss their potential in optical sensing.

We present the characterization of the reflection spectra of distributed Bragg reflectors (DBRs) created using DUV scanner lithography in indium-phosphide (InP) with the optical frequency domain reflectometry (OFDR) method.

We report charge transport measurements in nanoscale vertical pillar structures incorporating ultrathin layers of the organic semiconductor poly(3-hexylthiophene)(P3HT). P3HT layers with thickness down to 5 nm are gently top-contacted using wedging transfer, yielding highly reproducible, robust nanoscale junctions carrying high current densities (up to $10^6$ A/m$^2$). Current-voltage data modeling demonstrates excellent hole injection. This work opens up the pathway towards nanoscale, ultrashort-channel organic transistors for high-frequency and high-current-density operation., Comment: 30 pages, 8 figures, 1 table

Summary form only given. Pure and deterministic single-photon sources, obtained by coupling a semiconductor quantum dot (QD) to a photonic crystal (PhC) cavity, constitute a key component for quantum photonic integrated circuits (QPICs) [1]. These sources are commonly excited by a laser pump, which involves some practical limitations in scaling the number of integrated cavity-emitter nodes and is hardly compatible with on-chip single-photon detectors. Here, we present the first demonstration of electrical injection of single dot lines coupled to photonic crystal modes. The latter can be electrically re-configured to bring multiple cavity-emitters into energy resonance.

A single quantum dot deterministically coupled to a photonic crystal environment constitutes an indispensable elementary unit to both generate and manipulate single-photons in next-generation quantum photonic circuits. To date, the scaling of the number of these quantum nodes on a fully integrated chip has been prevented by the use of optical pumping strategies that require a bulky off-chip laser along with the lack of methods to control the energies of nano-cavities and emitters. Here, we concurrently overcome these limitations by demonstrating electrical injection of single excitonic lines within a nano-electro-mechanically tuneable photonic crystal cavity. When an electrically driven dot line is brought into resonance with a photonic crystal mode, its emission rate is enhanced. Anti-bunching experiments reveal the quantum nature of these on-demand sources emitting in the telecom range. These results represent an important step forward in the realization of integrated quantum optics experiments featuring multiple electrically triggered Purcell-enhanced single-photon sources embedded in a reconfigurable semiconductor architecture.

Wafer scale co-integration of the EICs to the PICs using the adhesion bonding technique can open up new opportunities for improved performance, power efficiency and manufacturability. Benzocyclobutene (BCB) polymer is an appropriate candidate for the bonding material owing to its adhesion quality, low dielectric constant and compatibility with Si and InP industries. In this paper, we present a low resistance metal interconnection technique in the wafer scale for carrying the high speed RF signals. The design concept is supported by measurements.

In this paper a generic monolithic photonic integration technology platform and tunable laser devices for gas sensing applications at 2 μm will be presented. The basic set of long wavelength optical functions which is fundamental for a generic photonic integration approach is realized using planar, but-joint, active-passive integration on indium phosphide substrate with active components based on strained InGaAs quantum wells. Using this limited set of basic building blocks a novel geometry, widely tunable laser source was designed and fabricated within the first long wavelength multiproject wafer run. The fabricated laser operates around 2027 nm, covers a record tuning range of 31 nm and is successfully employed in absorption measurements of carbon dioxide. These results demonstrate a fully functional long wavelength photonic integrated circuit that operates at these wavelengths. Moreover, the process steps and material system used for the long wavelength technology are almost identical to the ones which are used in the technology process at 1.5μm which makes it straightforward and hassle-free to transfer to the photonic foundries with existing fabrication lines. The changes from the 1550 nm technology and the trade-offs made in the building block design and layer stack will be discussed.

The III-V semiconductor InGaAs is a key material for photonics because it provides optical emission and absorption in the 1.55 μm telecommunication wavelength window. However, InGaAs suffers from pronounced nonradiative effects associated with its surface states, which affect the performance of nanophotonic devices for optical interconnects, namely nanolasers and nanodetectors. This work reports the strong suppression of surface recombination of undoped InGaAs/InP nanostructured semiconductor pillars using a combination of ammonium sulfide, (NH4)2S, chemical treatment and silicon oxide, SiOx, coating. An 80-fold enhancement in the photoluminescence (PL) intensity of submicrometer pillars at a wavelength of 1550 nm is observed as compared with the unpassivated nanopillars. The PL decay time of ∼0.3 μm wide square nanopillars is dramatically increased from ∼100 ps to ∼25 ns after sulfur treatment and SiOx coating. The extremely long lifetimes reported here, to our knowledge the highest reported to date for undoped InGaAs nanostructures, are associated with a record-low surface recombination velocity of ∼260 cm/s. We also conclusively show that the SiOx capping layer plays an active role in the passivation. These results are crucial for the future development of high-performance nanoscale optoelectronic devices for applications in energy-efficient data optical links, single-photon sensing, and photovoltaics.

Summary form only given. In this work, we report a remarkable suppression of the surface recombination rates in passivated III-V undoped InGaAs nanopillars on InP (inset of Fig. 1a). The surface passivation comprises ammonium sulfide, (NH4)2S, chemical treatment followed by encapsulation with a 50 nm layer of SiOx by plasma-enhanced chemical vapor deposition performed at 300°C. Before passivation, fabricated nanopillars with -300 nm lateral width, d, show a very poor photoluminescence (PL) emission (blue curve in Fig. 1a). The corresponding carrier dynamics, measured by time-correlated single-photon counting, Fig 1b, reveal an extremely short lifetime of ~130 ps, related to the well-known strong surface recombination velocity at InGaAs surfaces [3]. After the sulfur treatment followed by SiOx, we observe a substantial increase by almost two orders of magnitude of the PL intensity (red curve in Fig. 1a), while the carrier lifetime increases by more than two orders of magnitude to a value ~23 ns, red curve in Fig 1b. The estimated surface recombination velocity, S, decreases from about 2×104 cm/s in the untreated nanopillars down to around 260 cm/s (inset of Fig. 1b). To our knowledge, this is a record low value in undoped InGaAs semiconductors. Most importantly, our passivation studies reveal that the SiOx capping layer not only protects the pillars' sidewalls against oxidation, as reported in [5], but actively takes part in the passivation process, a result never previously reported.

In this paper, we present the detailed characterization of a semiconductor ring passively mode-locked laser with a 20 GHz repetition rate that was realized as an indium phosphide based photonic integrated circuit (PIC). Various dynamical regimes as a function of operating conditions were explored in the spectral and time domain. A record bandwidth of the optical coherent comb from a quantum well based device of 11.5 nm at 3 dB and sub-picosecond pulse generation is demonstrated.

We experimentally and numerically characterize the wavelength switching speed of a tunable semiconductor ring laser using filtered optical feedback. The feedback is realized employing two arrayed-waveguide gratings to split/recombine light into different wavelength channels. The wavelength tuning and switching is controlled by changing the currents injected in semiconductor optical amplifiers in the feedback section. A wavelength switching speed of a few nanoseconds is achieved. We investigate also the effect of the feedback parameters and noise strength on the wavelength switching speed.

In this Letter, we present a method to prepare a mixed electron-beam resist composed of a positive resist (ZEP520A) and C 60 fullerene. The addition of C 60 to the ZEP resist changes the material properties under electron beam exposure significantly. An improvement in the thermal resistance of the mixed material has been demonstrated by fabricating multimode interference couplers and coupling regions of microring resonators. The fabrication of distributed Bragg reflector structures has shown improvement in terms of pattern definition accuracy with respect to the same structures fabricated with normal ZEP resist. Straight InP membrane waveguides with different lengths have been fabricated using this mixed resist. A decrease of the propagation loss from 6.6 to 3.3¿¿dB/cm has been demonstrated.