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In today's market, crystalline silicon wafer technology dominates industrial solar cell production. Common devices feature opposing electrodes that are situated at the front and rear surface of the wafer and subsequent front-to-rear interconnection is used for module assembly. This paper reflects the functions which have to be fulfilled for the backside contact of the solar cell as well as challenges and advances for the two basic classes: full-area and local rear contact formation. While full-area contacting has proven to be a reliable technology for industrial production, local contacting through dielectric layers has yet to be put through its paces in industrial implementation.

In this paper we introduce the three-dimensional formulation of the OPTOS formalism, a matrix-based method that allows for the efficient simulation of non-coherent light propagation and absorption in thick textured sheets. As application examples, we calculate the absorptance of solar cells featuring textures on front and rear side with different feature sizes operating in different optical regimes. A discretization of polar and azimuth angle enables a three-dimensional description of systems with arbitrary surface textures. We present redistribution matrices for 3D surface textures, including pyramidal textures, binary crossed gratings and a Lambertian scatterer. The results of the OPTOS simulations for silicon sheets with different combinations of these surfaces are in accordance with both optical measurements and results based on established simulation methods like ray tracing. Using OPTOS, we show that the integration of a diffractive grating at the rear side of a silicon solar cell featuring a pyramidal front side results in absorption close to the Yablonovitch Limit enhancing the photocurrent density by 0.6 mA/cmsup2/supfor a 200 µm thick cell.

In this paper, we introduce a simulation formalism for determining the Optical Properties of Textured Optical Sheets (OPTOS). Our matrix-based method allows for the computationally-efficient calculation of non-coherent light propagation and absorption in thick textured sheets, especially solar cells, featuring different textures on front and rear side that may operate in different optical regimes. Within the simulated system, the angular power distribution is represented by a vector. This light distribution is modified by interaction with the surfaces of the textured sheets, which are described by redistribution matrices. These matrices can be calculated for each individual surface texture with the most appropriate technique. Depending on the feature size of the texture, for example, either ray- or wave-optical methods can be used. The comparison of the simulated absorption in a sheet of silicon for a variety of surface textures, both with the results from other simulation techniques and experimentally measured data, shows very good agreement. To demonstrate the versatility of this newly-developed approach, the absorption in silicon sheets with a large-scale structure (V-grooves) at the front side and a small-scale structure (diffraction grating) at the rear side is calculated. Moreover, with minimal computational effort, a thickness parameter variation is performed.

A lean process route for the contact separation of back-contact solar cells is presented in this article. Inkjet-printing of an etchant is used for patterning Al- and NiV-layers with varying thickness deposited by means of physical vapor deposition (PVD). By adjusting the drop spacing of the droplets, the number of layers printed on top of each other, the temperature during printing and etching, and the etching time, the authors were able to fabricate a meander structure on a silicon wafer with an edge length of 156 mm that was coated with a 100 nm thick NiV-layer. Visual and electrical characterization was performed on test structures. The resistance between these separated structures was up to 1.5 M Omega and thus meets the requirement of a back-contact solar cell.

Enhanced absorption of near infrared light in silicon solar cells is important for achieving high conversion efficiencies while reducing the solar cell's thickness. Hexagonal gratings on the rear side of solar cells can achieve such absorption enhancement. Our wave optical simulations show photocurrent density gains of up to 3 mA/cm2 for solar cells with a thickness of 40 µm and a planar front side. Hexagonal sphere gratings have been fabricated and optical measurements confirm the predicted absorption enhancement. The measured absorption enhancement corresponds to a photocurrent density gain of 1.04 mA/cm2 for planar wafers with a thickness of 250 µm and 1.49 mA/cm2 for 100 µm.

For optimum performance of solar cells featuring a locally contacted rear surface, the metallization fraction as well as the size and distribution of the local contacts are crucial, since Ohmic and recombination losses have to be balanced. In this work we present a set of equations which enable to calculate this trade off without the need of numerical simulations. Our model combines established analytical and empirical equations to predict the energy conversion efficiency of a locally contacted device. For experimental verification, we fabricate devices from float zone silicon wafers of different resistivity using the laser fired contact technology for forming the local rear contacts. The detailed characterization of test structures enables the determination of important physical parameters, such as the surface recombination velocity at the contacted area and the spreading resistance of the contacts. Our analytical model reproduces the experimental results very well and correctly predicts the optimum contact spacing without the use of free fitting parameters. We use our model to estimate the optimum bulk resistivity for locally contacted devices fabricated from conventional Czochralski-grown silicon material. These calculations use literature values for the stable minority carrier lifetime to account for the bulk recombination caused by the formation of boron-oxygen complexes under carrier injection.

In this paper we give a mathematical derivation of how luminescence images of silicon solar cells can be calibrated to local junction voltage. We compare two different models to extract spatially resolved physical cell parameters from voltage images. The first model is the terminal connected diode model, where each pixel is regarded as a diode with a certain dark saturation current, which is connected via a series resistance with the terminal. This model is frequently used to evaluate measurement data of several measurement techniques with respect to local series resistance. The second model is the interconnected diode model, where the diode on one pixel is connected with the neighbor diodes via a sheet resistance. For each model parameter at least one image is required for a coupled determination of the parameters. We elaborate how also the voltage calibration can be added as an unknown parameter into the models, and how the resulting system of equations can be solved analytically. Finally the application of the models and the different ways of voltage calibration are compared experimentally.

Effective light trapping concepts are increasingly relevant for thinner crystalline silicon solar cells. Diffractive rear side structures can be designed to enhance optical light path lengths in the weakly absorbed infrared wavelength range. However, because of the rather difficult passivation of these nano-scale structures and possible plasma induced damages, the optical gain has so far not been shown on final device level for wafer-based crystalline silicon solar cells in combination with a high open circuit voltage. In this work, we fabricated and characterized silicon solar cells with an optically active layer at the rear side which is electrically decoupled from the silicon bulk by a thin, planar passivation layer. A binary diffraction grating was realized on the rear side via Nanoimprint Lithography (NIL) and plasma etching. For the rear side metallization a laser based foil process and photolithographically opened point contacts with evaporated aluminum were used as two alternative process routes. The best cell shows an EQE increase of up to 29 % absolute at 1100 nm compared to planar reference cells. This corresponds to a total Jsc gain of 1.2 mA/cm2 and a best cell efficiency of 19.4 % (Voc: 683.1 mV, Jsc: 35.4 mA/cm2, FF: 81.0 %) with planar front side and SiO2 antireflection coating. Optical simulations, which fit well to the experimental data, show that cell efficiencies of 20.8 % and 21.3 % can be reached with a planar front by using an optimized single layer (SiNxOy) or double layer (MgF, SiNx) ARC, respectively. By calculating Jsc for different cell thicknesses it is shown that a 100 μm thick solar cell incorporating the fabricated diffractive grating is expected to exhibit a higher Jsc than a planar cell with 250 μm thickness.