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The Hera Saturn entry probe mission is proposed as an M--class mission led by ESA with a contribution from NASA. It consists of one atmospheric probe to be sent into the atmosphere of Saturn, and a Carrier-Relay spacecraft. In this concept, the Hera probe is composed of ESA and NASA elements, and the Carrier-Relay Spacecraft is delivered by ESA. The probe is powered by batteries, and the Carrier-Relay Spacecraft is powered by solar panels and batteries. We anticipate two major subsystems to be supplied by the United States, either by direct procurement by ESA or by contribution from NASA: the solar electric power system (including solar arrays and the power management and distribution system), and the probe entry system (including the thermal protection shield and aeroshell). Hera is designed to perform in situ measurements of the chemical and isotopic compositions as well as the dynamics of Saturn's atmosphere using a single probe, with the goal of improving our understanding of the origin, formation, and evolution of Saturn, the giant planets and their satellite systems, with extrapolation to extrasolar planets. Hera's aim is to probe well into the cloud-forming region of the troposphere, below the region accessible to remote sensing, to the locations where certain cosmogenically abundant species are expected to be well mixed. By leading to an improved understanding of the processes by which giant planets formed, including the composition and properties of the local solar nebula at the time and location of giant planet formation, Hera will extend the legacy of the Galileo and Cassini missions by further addressing the creation, formation, and chemical, dynamical, and thermal evolution of the giant planets, the entire solar system including Earth and the other terrestrial planets, and formation of other planetary systems., Comment: Accepted for publication in Planetary and Space Science

A SiN membrane based MgB2 thin-film bolometer, with a non-optimized absorber, has been fabricated that shows an electrical noise equivalent power of 256 fW/square root Hz operating at 30 Hz in the 8.5 - 12.35 micron spectral bandpass. This value corresponds to an electrical specific detectivity of 7.6 x 10(exp 10) cm square root Hz/W. The bolometer shows a measured blackbody (optical) specific detectivity of 8.8 x 10(exp 9) cm square root Hz/W, with a responsivity of 701.5 kV/W and a first-order time constant of 5.2 ms. It is predicted that with the inclusion of a gold black absorber that a blackbody specific detectivity of 6.4 x 10(exp 10) cm/square root Hz/W at an operational frequency of 10 Hz, can be realized for integration into future planetary exploration instrumentation where high sensitivity is required in the 17 - 250 micron spectral wavelength range.

The noise voltage spectral density in the superconducting transition of a MgB2 thin film on a SiN-coated Si thick substrate was measured over the frequency range 1 Hz-to-1 KHz. Using established bolometer noise theory the theoretical noise components due to Johnson, 1/f(excess) and phonon noise are modeled to the measured data. It is shown that for the case of a MgB2 thin film in the vicinity of the mid-point of transition, coupled to a heat sink via a fairly high thermal conductance (approximately equal to 10(sup -1) W/K)) that the measured noise voltage spectrum is 1/f limited and exhibits lit dependence with a varying between 0.3 and 0.5 in the measured frequency range. At a video frame rate frequency of 30 Hz the measured noise voltage density in the film is approximately equal to 61 nV /the square root of HZ, using this value an upper limit of electrical NEP approximately equal to 0.67pW / the square root of Hz is implied for a practical MgB2 bolometer operating at 36.1 K.

Membrane-structured superconducting MgB2 thin films are potential candidates for the development of moderately cooled bolometers sensitive to far infra-red radiation. On the path to developing such devices, we present a comparison of three etching techniques for MgB2 thin films namely, chlorine plasma etch, aqueous hydrochloric acid etch and an aqueous nitric acid etch. Out of the three etch techniques, the aqueous 50% nitric acid solution etch, using standard photolithography, proved to have a high MgB2 etch rate (> 51 nm/s), with better sidewall delineation and selectivity to the underlying SiN-film-coated Si substrate, moreover the etched film structure showed good superconductivity transition characteristics, namely, a superconducting critical transition at 38.57 plusmn 0.6 K, a transition width of 0.09 K and a RRR of 2.22.

RNA silencing suppressor genes derived from six virus genera were transformed into Nicotiana benthamiana and N. tabacum plants. These suppressors were P1 of Rice yellow mottle virus (RYMV), P1 of Cocksfoot mottle virus, P19 of Tomato bushy stunt virus, P25 of Potato virus X, HcPro of Potato virus Y (strain N), 2b of Cucumber mosaic virus (strain Kin), and AC2 of African cassava mosaic virus (ACMV). HcPro caused the most severe phenotypes in both Nicotiana spp. AC2 also produced severe effects in N. tabacum but a much milder phenotype in N. benthamiana, although both HcPro and AC2 affected the leaf tissues of the two Nicotiana spp. in similar ways, causing hyperplasia and hypoplasia, respectively. P1-RYMV caused high lethality in the N. benthamiana plants but only mild effects in the N. tabacum plants. Phenotypic alterations produced by the other transgenes were minor in both species. Interestingly, the suppressors had very different effects on crucifer-infecting Tobamovirus (crTMV) infections. AC2 enhanced both spread and brightness of the crTMV-green fluorescent protein (GFP) lesions, whereas 2b and both P1 suppressors enhanced spread but not brightness of these lesions. P19 promoted spread of the infection into new foci within the infiltrated leaf, whereas HcPro and P25 suppressed the spread of crTMV-GFP lesions.

Full-length cDNAs of the wild-type (wt) Tobacco mosaic virus (TMV) and of the coat protein gene-deleted (ΔCP) derivative of wt-TMV, under control of the 35S promoter and downstream ribozyme sequence to produce accurate viral transcripts, were transformed to tobacco plants to analyze plant–virus interactions through different stages of plant development. Surprisingly, young wt-TMV transgenics accumulated only very low levels of viral RNA, remained free of symptoms, and were moderately resistant against exogenous inoculations. This early resistance caused significant stress to the plants, as indicated by reduced growth. Approximately 7 to 8 weeks after germination, the resistance was broken and plants developed typical wt-TMV symptoms, with high accumulation of the viral RNAs and proteins. The ΔCP-TMV plants likewise were initially resistant to the endogenous inoculum and were stunted, although to a lesser extent than the wt-TMV plants. The resistance was broken at the same time as in the wt-TMV plants, but the mutant replicated to much lower levels and produced much milder symptoms than the wt virus. TMV-specific small interfering RNAs as well as increased transgene methylation were detected in the plants only after the resistance break, indicating that the resistance in the young plants was not due to RNA silencing.

Doxorubicin (DOX) is a highly effective chemotherapeutic agent related to dose-dependent cardiomyopathy. Recent evidence suggests that erythropoietin (EPO) can play a protective role in cardiovascular diseases by non-erythropoietic effects. In the present study, we tested the hypothesis that EPO may protect against DOX-induced cardiomyopathy through anti-apoptotic mechanisms both in vitro and in vivo.Isolated neonatal Wistar rat cardiomyocytes were treated with vehicle, DOX with or without EPO, or EPO. Twenty-four hours later, the cells were used to determine cardiomyocyte apoptosis (TUNEL assay). Cardiomyopathy was induced in Wistar rats by intraperitoneal injections (IP) of DOX (2.5 mg/kg, six times for 2 weeks). EPO (2,500 U/kg, six times for 2 weeks) was administered simultaneously in the DOX+EPO group and the EPO group. Two weeks after the last administration, cardiac function was evaluated by echocardiography and invasive haemodynamic measurements. Rats were then sacrificed for histological and TUNEL analyses, with immunological detection for cardiac Troponin-T (cTnT), alpha-actinin, Bax and Bcl-2.EPO significantly ameliorated DOX-induced apoptosis of cultured cardiomyocytes as demonstrated by TUNEL assay. In the rat model, cardiac function significantly decreased in the DOX group. In contrast, the DOX+EPO group showed considerable improvement in cardiac function, inhibition of cardiomyocyte apoptosis, reduction of fibrosis, as well as up-regulation of Bcl-2 protein expression.Our results suggest that EPO exerts preventive cardioprotective effects on DOX-induced cardiomyopathy via anti-apoptotic pathways. The up-regulation of Bcl-2 protein expression may contribute to this.

A thin film of MgB 2 , grown on a SiN–Si substrate, with a superconducting transition temperature, T c , near 39 K has been irradiated with γ-rays from a 60 Co source. The total dose was 100 Krads (Si). Its pre- and post-irradiation noise has been measured and noise spectral density plots made. No change in d R /d T , pre- and post-irradiation was measured. At the mid-point of the transition, T = 38.24 K, a noise spectral density S V = 0.34 nV Hz −1/2 was measured at 10 Hz. The temperature noise, K n , of the MgB 2 film at different frequencies is compared to that of high temperature superconducting (HTS) thin films (YBaCuO and GdBaCuO with T c ∼ 90 K) used currently in HTS transition-edge bolometers. Even with the observed post-irradiation small increase in noise, its lower T c and K n values predict that high performance far IR bolometers can be developed using MgB 2 as a thermistor.

The external quantum efficiency in the spectral wavelength range 5–500 nm of a large active area Pt/n-type GaN Schottky photodiode that exhibits low reverse bias leakage current, is reported. The Schottky photodiodes were fabricated from n−/n+ epitaxial layers grown by low pressure metalorganic vapour phase epitaxy on single crystal c-plane sapphire. The current–voltage ( I – V ) characteristics of several 0.25 cm2 devices are presented together with the capacitance–voltage ( C – V ) characteristics of one of these devices. A leakage current as low as 14 pA at 0.5 V reverse bias is reported, for a 0.25 cm2 diode. The ultraviolet quantum efficiency measurements show that the diodes can be used as radiation hard detectors for the 5–365 nm spectral range without the use of visible blocking filters. A peak responsivity of 77.5 mA/W at 320 nm is reported for one of the fabricated devices, corresponding to a spectral detectivity, D * = 1.5 × 1 0 14 cm Hz 1 / 2 W - 1 . The average detectivity between 250 and 350 nm, for the same device, is reported to be D ¯ * = 1.3 × 1 0 14 cm Hz 1 / 2 W - 1 . The spatial responsivity uniformity variation was established, using H2 Lyman-α radiation, to be ±3% across the surface of a typical 0.25 cm2 diode.

Pt/4H-SiC Schottky photodiodes have been fabricated with the device areas up to 1 cm/sup 2/. The I-V characteristics and photoresponse spectra have been measured and analyzed. For a 5 mm/spl times/5 mm area device leakage current lower than 10/sup -15/ A at zero bias and 1.2/spl times/10/sup -14/ A at -1 V have been established. The quantum efficiency is over 30% from 240 to 320 nm. The specific detectivity, D/sup */, has been calculated from the directly measured leakage current and quantum efficiency are shown to be higher than 10/sup 15/ cmHz/sup 1/2//W from 210 to 350 nm with a peak D/sup */ of 3.6/spl times/10/sup 15/ cmHz/sup 1/2//W at 300 nm.

Suspended, monolithic, 12 μm thick, low thermal mass r -plane sapphire membranes with predictable thermal isolation have been fabricated for use in the construction of TES bolometers. A thin film of YBa 2 Cu 3 O 7− ∂ (YBCO) high temperature superconductor grown epitaxially on one such membrane shows a sharp transition temperature at 90 K. Early performance results of a high- T c TES bolometer fabricated using a monolithic membrane are presented and compared to those of a previous kevlar fiber suspended TES bolometer. Merits of voltage biasing to improve noise and response time are briefly discussed. Monolithic sapphire membranes open the door for the development of 1D and 2D arrays of moderately cooled TES bolometers for far infrared exploration of the outer solar system.

This publisher's note renumbers the reference list in Appl. Opt.56, 5274 (2017)APOPAI0003-693510.1364/AO.56.005274.

The Cassini spacecraft orbiting Saturn carries the composite infrared spectrometer (CIRS) designed to study thermal emission from Saturn and its rings and moons. CIRS, a Fourier transform spectrometer, is an indispensable part of the payload providing unique measurements and important synergies with the other instruments. It takes full advantage of Cassini’s 13-year-long mission and surpasses the capabilities of previous spectrometers on Voyager 1 and 2. The instrument, consisting of two interferometers sharing a telescope and a scan mechanism, covers over a factor of 100 in wavelength in the mid and far infrared. It is used to study temperature, composition, structure, and dynamics of the atmospheres of Jupiter, Saturn, and Titan, the rings of Saturn, and surfaces of the icy moons. CIRS has returned a large volume of scientific results, the culmination of over 30 years of instrument development, operation, data calibration, and analysis. As Cassini and CIRS reach the end of their mission in 2017, we expect that archived spectra will be used by scientists for many years to come.

Nepoviral infections induce recovery in fully expanded leaves but persist in shoot apical meristem (SAM) by a largely unknown mechanism. The dynamics of infection of a grapevine isolate of Artichoke Italian latent virus (AILV-V, genus Nepovirus) in tobacco plants, including colonization of SAM, symptom induction and subsequent recovery of mature leaves from symptoms, were characterized. AILV-V moved from the inoculated leaves systemically and invaded SAM in 7 days post-inoculation (dpi), remaining detectable in SAM at least up to 40 dpi. The new top leaves recovered from viral symptoms earliest at 21 dpi. Accumulation of viral RNA to a threshold level was required to trigger the overexpression of RDR6 and DCL4. Consequently, accumulation of viral RNA decreased in the systemically infected leaves, reaching the lowest concentration in the 3rd and 4th leaves at 23 dpi, which was concomitant with recovery of the younger, upper leaves from disease symptoms. No evidence of virus replication was found in the recovered leaves, but they contained infectious virus particles and were protected against re-inoculation with AILV-V. In this study we also showed that AILV-V did not suppress initiation or maintenance of RNA silencing in transgenic plants, but was able to interfere with the cell-to-cell movement of the RNA silencing signal. Our results suggest that AILV-V entrance in SAM and activation of RNA silencing may be distinct processes since the latter is triggered in fully expanded leaves by the accumulation of viral RNA above a threshold level rather than by virus entrance in SAM.

Previously described transgenic tobacco lines express the full length infectious Tobacco mosaic virus (TMV) genome under the 35S promoter (Siddiqui et al., 2007. Mol Plant Microbe Interact, 20: 1489–1494). Through their young stages these plants exhibit strong resistance against both the endogenously expressed and exogenously inoculated TMV, but at the age of about 7–8 weeks they break into TMV infection, with typical severe virus symptoms. Infections with some other viruses (Potato viruses Y, A, and X) induce the breaking of the TMV resistance and lead to synergistic proliferation of both viruses. To deduce the gene functions related to this early resistance, we have performed microarray analysis of the transgenic plants during the early resistant stage, and after the resistance break, and also of TMV-infected wild type tobacco plants. Comparison of these transcriptomes to those of corresponding wild type healthy plants indicated that 1362, 1150 and 550 transcripts were up-regulated in the transgenic plants before and after the resistance break, and in the TMV-infected wild type tobacco plants, respectively, and 1422, 1200 and 480 transcripts were down-regulated in these plants, respectively. These transcriptome alterations were distinctly different between the three types of plants, and it appears that several different mechanisms, such as the enhanced expression of the defense, hormone signaling and protein degradation pathways contributed to the TMV-resistance in the young transgenic plants. In addition to these alterations, we also observed a distinct and unique gene expression alteration in these plants, which was the strong suppression of the translational machinery. This may also contribute to the resistance by slowing down the synthesis of viral proteins. Viral replication potential may also be suppressed, to some extent, by the reduction of the translation initiation and elongation factors eIF-3 and eEF1A and B, which are required for the TMV replication complex.

We report on progress made so far at NASA Goddard Space Flight Center towards the development of arrays of X-ray microcalorimeters as candidates for the high-resolution X-ray spectrometer on the Constellation-X mission. In the design concept presently under consideration, the microcalorimeter consists of (i) a Bi/Cu multilayer absorber for stopping and thermalizing the incident X-rays, (ii) an e-beam evaporated Mo/Au proximity bilayer with sputtered Nb leads for sensing the resultant temperature rise, and (iii) a silicon nitride membrane to provide a weak thermal link to the sink temperature so that the calorimeter can return to its equilibrium temperature. Fabrication details and preliminary results are reported.

We present the first measurement results for silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) and SiGe BiCMOS circuits operating in the sub-1-K regime. Robust transistor operation of a first-generation 0.5 times 2.5 times 4-mum2 SiGe transistor is demonstrated at package temperatures as low as 300 mK. In addition, a SiGe BiCMOS bandgap voltage reference is verified to be fully functional at operating temperatures below 700 mK. The SiGe voltage reference exhibits a temperature coefficient of 160 ppm/degC over the temperature range of 700 mK-300 K.

Tobacco plants infected simultaneously by Tobacco mosaic virus (TMV) and Cucumber mosaic virus (CMV) are known to produce a specific synergistic disease in which the emerging leaves are filiformic. Similar developmental malformations are also caused to a lesser extent by the severe strains (e.g., Fny) of CMV alone, but mild strains (e.g., Kin) cause them only in mixed infection with TMV. We show here that transgenic tobacco plants expressing 2b protein of CMV-Kin produce filiformic symptoms when infected with TMV, indicating that only 2b protein is needed from CMV-Kin for this synergistic relationship. On the other hand, transgenic plants that express either the wild-type TMV genome or a modified TMV genome with its coat protein deleted or movement protein (MP) inactivated also develop filiformic or at least distinctly narrow leaves, while plants expressing the MP alone do not develop any malformations when infected with CMV-Kin. These results show that either TMV helicase/replicase protein or active TMV replication are required for this synergistic effect. The effect appears to be related to an efficient depletion of silencing machinery, caused jointly by both viral silencing suppressors, i.e., CMV 2b protein and the TMV 126-kDa replicase subunit.

Several applications of short wavelengths imaging detectors require low cost, large area, high energy resolution. The large area PIN photodiodes are fabricated for low noise amplifiers with as low as 1fA/cm2. Usually, the PIN diodes require high quality insulator without any defects and oxide charges [1]. In this work, we were able to reduce the leakage currents as low as 1nA/cm2 with various fabrication technologies mentioned below. The aim of this work was to fabricate silicon photodiode detector for specific wavelengths (λ=300~400nm). These devices are designed with relatively large active areas (~ 4cm2) for high voltage application while maintaining a low reverse leakage current density (~ 1nA/cm2). The low leakage currents are achieved by high temperature gettering process, shallow depth implantation, and floating guard ring structures.

The transition between normal conduction and superconductivity in superconducting materials can be exploited as a highly sensitive thermometer. Transition temperatures can be tailored through the selection of materials, their component cases of more than one material. Two bilayer configurations, Ag/Al and Au/Mo, are examined, including details of preparation, testing, and encountered difficulties. Proposed designs for spaceflight detector applications are discussed.

We report device performance investigation of 4H-SiC avalanche photodiodes (APDs) with or without absorbing AlGaN cap layers, as 4H-SiCspsila potential use in single photon counter APDs have drawn interest. Wide bandgap 4H-SiC photodiodes have low dark current levels at high temperatures and under intense radiation compared to silicon, and the 4H-SiC APDs are ldquosolar blindrdquo - transparent to the sunpsilas visible spectrum. Additionally, they offer avalanche multiplications approaching a million, making single photon count possible. However, design and optimization of single photon counter APDs require a thorough understanding of impact ionization and optical absorption at the material level, and steady-state and transient APD operation at the device level. Here we address both of these levels.

This study investigated the effects of silencing suppressors derived from six different viruses (P1, P19, P25, HcPro, AC2 and 2b), expressed in transgenic Nicotiana tabacum and Nicotiana benthamiana plants, on the infection pattern of tobacco ringspot virus (TRSV) potato calico strain. In N. benthamiana, this virus produced an initial infection with severe systemic symptoms, but the infection was strongly reduced within a few weeks as the plant recovered from the infection. P25 and HcPro silencing suppressors effectively prevented recovery in this host, allowing continuous accumulation of the viral RNA as well as of the virus-specific small interfering RNAs, in the systemically infected leaves. In the P1-, P19-, AC2- or 2b-expressing transgenic N. benthamiana, the recovery was not complete. Susceptibility of N. tabacum to this virus was temperature sensitive. At lower temperatures, up to 25 °C, the plants became systemically infected, but at higher temperatures, the infections were limited to the inoculated leaves. In these preventative conditions, all silencing suppressor transgenes (except P25, which was expressed at very low levels) allowed the establishment of systemic infections. Very strong and consistent systemic infections were observed in HcPro- and AC2-expressing plants.

Summary form only given. We report on the design, fabrication and testing of a back-illuminated, voltage bias selectable, dual band deep ultraviolet (UV) AlGaN photodetector for integration into space spectroscopic instrumentation. The photodetector can separate UV-A and UV-B band radiation by bias switching a two terminal n-p-n homojunction structure that is fabricated in the same pixel. When a forward bias is applied between the top and bottom electrodes, the detector can sense UV-A and reject UV-B band radiation. Alternatively, under reverse bias, the photodetector can sense UV-B and reject UV-A band radiation. The proof-of-concept design presented here shows that it is feasible to fabricate a dual-band deep UV photodetector based on the current state-of-art AlGaN material growth and fabrication technologies.

Noise was studied in an MgB2 thin film grown on a SiN substrate, with a superconducting transition temperature, Tc, near 39K. At the mid-point of the transition and at 10Hz a noise spectral density Sv = 0.34nVHz1/2 was measured. The temperature noise, Kn , of the MgB2 film at different frequencies is compared to that of cuprate high temperature superconducting (HTS) thin films (with Tc ~ 90 K) used currently in transition-edge devices. Kn values predict that 2-D arrays of high performance infrared devices can be developed using MgB2.

An MgB 2 thin film was grown on a SiN-Si substrate, with a superconducting transition temperature, T c , near 39K. At the mid-point of the transition (T= 38.24K) and at 10Hz a noise spectral density S V = 0.34nV/ √Hz was measured. The temperature noise, K n , of the MgB 2 film at different frequencies is compared to that of cuprate high temperature superconducting (HTS) thin films (with T c ~ 90 K) used currently in transition-edge bolometers. Κ n values predict that high performance far-IR thermal detectors (i.e bolometers) can be developed using MgB 2 as a thermistor.

The development of high quantum efficiency photemissive detectors is recognized as a significant advancement for astronomical missions requiring photon-counting detection. For solar-blind NUV detection, current missions (GALEX, STIS) using Cs2Te detectors are limited to ~10% DQE. Emphasis in recent years has been to develop high QE (>50%) GaN and AlGaN photocathodes (among a few others) that can then be integrated into imaging detectors suitable for future UV missions. We report on progress we have made in developing GaN photocathodes and discuss our observations related to parameters that effect efficiency and stability, including intrinsic material properties, surface preparation, and vacuum environment. We have achieved a QE in one case of 65% at 185 nm and are evaluating the stability of these high QEs. We also discuss plans for incorporating photocathodes into imaging and non-imaging sealed devices in order to demonstrate long term stability.

Rapid progress in the AlGaN (E g =3.4-6.2eV), 4H-SiC (E g =3.2eV) and ZnMgO (E g =2.8-7.9eV) material systems over the last five years has led to the demonstration of a number of opto-electronic devices. These wide energy band gap devices offer several key advantages for space applications, over conventional Si (E g =1.1eV) based devices, such as visible-blind detection, high thermal stability, better radiation hardness, high breakdown electric field, high chemical inertness and greater mechanical strength. Furthermore, the shorter cut-off wavelength of these material systems eliminates the need for bulky and expensive optical filtering components mitigating risk and allowing for simpler optical design of instrumentation. In this paper, we report on the development at NASA/Goddard of ultra-sensitive, high quantum efficiency AlGaN and 4H-SiC Schottky barrier UV-EUV photodiodes, 4H-SiC UV single photon avalanche diodes, large format 256x256 AlGaN UV p-i-n photodiode arrays and recent progress in elemental substitution for p-type and enhanced n-type doping of ZnO.

The performance of a high Tc (~90 K) transition-edge superconducting (TES) bolometer on a monolithic sapphire membrane is presented and discussed. It is compared to the performance of a previous TES bolometer on non-monolithic sapphire substrate. The development and optimization of monolithic sapphire membranes is critical for the fabrication of 1 and 2-D arrays of TES bolometers. Moderately cooled and optimized TES bolometers are expected to be the replacements of choice for thermopiles and other room temperature thermal sensors on far IR instruments on future planetary missions.

We describe the development of high quantum efficiency UV photocathodes for use in large area two dimensional microchannel plated based, detector arrays to enable new UV space astronomy missions. Future UV missions will require improvements in detector sensitivity, which has the most leverage for cost-effective improvements in overall telescope/instrument sensitivity. We use new materials such as p-doped GaN, AlGaN, ZnMgO, SiC and diamond. We have currently obtained QE values > 40% at 185 nm with Cesiated GaN, and hope to demonstrate higher values in the future. By using controlled internal fields and nano-structuring of the surfaces, we plan to provide field emission assistance for photoelectrons while maintaining their energy distinction from dark noise electrons. We will transfer these methods from GaN to ZnMgO a new family of wide band-gap materials more compatible with microchannel plates. We also are exploring technical parameters such as doping profiles, internal and external field strengths, angle of incidence, field emission assistance, surface preparation, etc.

Two-dimensional microshutter arrays are being developed at NASA Goddard Space Flight Center (GSFC) for the Next Generation Space Telescope (NGST) for use in the near-infrared region. Functioning as focal plane object selection devices, the microshutter arrays are 2-D programmable masks with high efficiency and high contrast. The NGST environment requires cryogenic operation at 45 K. Arrays are close-packed silicon nitride membranes with a unit cell size of 100x100 micrometer. Individual shutters are patterned with a torsion flexure permitting shutters to open 90 degrees with minimized mechanical stress concentration. The mechanical shutter arrays are fabricated with MEMS technologies. The processing includes a RIE front-etch to form shutters out of the nitride membrane, an anisotropic back-etch for wafer thinning, and a deep RIE (DRIE) back-etch down to the nitride shutter membrane to form frames and to relieve the shutters from the silicon substrate. A layer of magnetic material is deposited onto each shutter. Onto the side-wall of the support structure a metal layer is deposited that acts as a vertical hold electrode. Shutters are rotated into the support structure by means of an external magnet that is swept across the shutter array for opening. Addressing is performed through a scheme using row and column address lines on each chip and external addressing electronics.

We are developing novel photodetector arrays based on superconducting transition-edge sensor (TES) and pop-up detector(PUD) technologies. The TES has the potential for a new generation of high sensitivity photodetectors from the infrared tothe x-ray. This is directly due to the sharpness of the resistance change with temperature at the superconducting transition.The TESs are deposited on the PUD arrays and serve as the sensing elements. The PUDs are close-packed, folded membranearrays that provide the TES substrate and the thermal isolation required by the bolometers and microcalorimeters. This paperpresents the processing-related characterization results of preliminary TES and PUD designs. The goal of this work is tofabricate a new generation of x-ray calorimeters and infrared bolometers for space flight projects.Al-Ag and Mo-Au TES bilayers were fabricated by electron-beam deposition in an ultra-high vacuum system. To achieve thedesired transition temperatures and stability, materials-related properties such as adhesion, surface morphology, film stress,and electrochemical reaction ofthe bilayers were studied. Mo-Au bilayers showed better chemical and electrical stability thanAl-Ag bilayers. The PUD arrays were fabricated with a 0.2mm pitch on silicon wafers. MEMS techniques were used in thefabrication of PUD arrays. Mechanical folding tests were conducted to inspect the mechanical stress distribution for the arraystructures. The test results showed yields for fourteen designs. Mechanical modeling was conducted using non-linear staticand dynamic simulations. The simulations agreed with the trends of mechanical folding tests. Scanning electron microscopywas utilized to examine the flatness of detectors and the alignment of detectors in arrays.Key Words: Superconducting transition edge sensor, Pop-up detector, Mo-Au bilayer, Al-Ag bilayer, bolometer,microcalorimeter, Anisotropic etching, FEM simulation.

Reactive ion etching (RIE) is commonly used, as a process tool, for the etching of polysilicon, silicon dioxide, silicon nitride and other thin film deposits. One of the key requirements of the etching process is the accurate end-point detection of the process. There exist a number of process monitoring techniques for end-point detection, these however are costly to install and maintain. In response to this requirement, a new method for end-point detection of polysilicon topography etching in single wafer plasma reactive ion etcher is presented here, which incurs no added costs. The method is based upon experimental results correlating polysilicon etching end-point with the increase in the cathodic self-bias voltage developed across the substrate. It is shown that the end-point of polysilicon topography etching can be found by monitoring the first derivative of the self- bias voltage with time. Using this method it has been demonstrated that accurate end-point detection of polysilicon etching can be obtained with a residue free field, near- vertical polysilicon profile and critical dimension loss of less than 0.05 micrometer.© (1997) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

The future needs of space based observational planetary and astronomy missions include low mass and small volume radiometric instruments that can operate in high radiation and low temperature environments. Here we focus on a central spectroscopic component, the bandpass filter. We model the bandpass response of the filters to target the wavelength of the resonance peaks at 20, 40, and 60 micrometers and report good agreement between the modeled and measured response. We present a technique of using common micromachining processes for semiconductor fabrication to make compact, free standing resonant metal mesh filter arrays with silicon support frames. The process can accommodate multiple detector array architectures and the silicon frame provides lightweight mechanical support with low form factor. We also present a conceptual hybridization of the filters with a detector array.

Bilayer thin films have been utilized in superconducting transition-edge sensors (TES) for photodetector development. A TES is formed with a normal metal conductor film and a superconductor film, so called bilayer, deposited on a subtract. In its,transition temperature region, the resistance of the superconductor film is extremely sensitive to the temperature. When an incident radiation ray arrives, the temperature of the bilayer increases, leading the resistance increases tremendously. A superconducting quantum interference device measures the current variation for read-out. By varying the relative thickness of the normal metal conductor layer and the superconductor layer, one can adjust the transition temperature of the bilayer to a desired range according to the proximity effect. TES bilayers are fabricated on Si-based substrates for the development of infrared, ultra-violet, and x-ray detectors.Various normal and superconducting metal combinations are considered as bilayer candidates. When two metals are brought together, the concerns usually rise to those materials issues that may affect TES performance.

We report comparisons of measured photocurrent versus voltage curves of avalanche photodiodes (APDs) with those calculated using different 4H-SiC hole and electron impact ionization coefficients. As the published impact ionization coefficients result in ionization rates that differ greatly in magnitude, the predicted breakdown voltages using these models vary by many volts. To this end, we investigate the breakdown voltage prediction capability of three prevailing impact ionization models in conjunction with several experiments. To obtain APD performance numerically, we developed a device simulator, which shows that the inclusion of proper electric field-dependent impact ionization rates can accurately predict a variety of measured current-voltage curves, breakdown voltages, and current multiplication rates.

We report on the design, fabrication and characterization of a back-illuminated voltage bias selectable dual-band AlGaN UV photodetector. The photodetector can separate UVA and W-B band radiation by bias switching a two terminal n-p-n homojunction structure that is fabricated in the same pixel. When a forward bias is applied between the top and bottom electrodes, the detector can sense UV-A and reject W-B band radiation. Alternatively, under reverse bias, the photodetector can sense UV-B and reject UV-A band radiation.

Often a transformer is used with a DC-blocking capacitor as a voltage gain stage in experimental setups that measure low-frequency noise in high-Tc superconducting films. Presented is a system response analysis to show that the value of the DC-blocking capacitor determines the validity of the lower frequency limit of the measured noise voltage spectral density data.

Using conventional photolithography, Al 0.35 Ga 0.65 N pin diodes have been fabricated that exhibit extremely low reverse bias leakage currents. Macroscopic I-V measurements from a statistical population of 64, 120 μm diameter, circular diodes gives a mean leakage current of 0.96 fA with a standard deviation of 0.90 fA at -0.5 V bias.

Pt/n-type GaN Schottky photodiodes with large active areas which exhibit low leakage currents are fabricated. Reverse bias leakage currents of 2.7 nA for a 1 cm2 diode and 14 pA for a 0.25 cm2 diode both at −0.5 V bias are reported. External quantum efficiency measurements between the spectral range 50 to 500 nm gave a peak responsivity of 77.5 mA/W at 320 nm for a 0.25 cm2 diode, corresponding to a spectral detectivity, D*=1.5×1014 cmHz1/2W−1.

Hyperspectral snapshot imagers are capable of producing 2D spatial images with a single exposure at selected and numerous wavelength bands instead of 1D spatial at all spectral band images like in push-broom instruments. Snapshot imagers are critical technologies for multi-angle remote sensing using distributed space missions. They help to relax the attitude control requirements of clusters of small satellites whose narrow field-of-view payloads point at the same ground spot or to increase the footprint area of small satellite constellations with wide field-of-view payloads. This paper reviews the existing spectral imagers for multi-angle remote sensing, performs a feasibility study to incorporate existing state-of-the-art snapshot imagers and proposes baseline imagers to serve as payload for the distributed nanosatellites. The overall approach includes an extensive trade study to identify the optics, spectral elements, their parameters and compare the identified choices both qualitatively and quantitatively. The proposed baseline design has an telescope aperture diameter of 7 cm, focal plane pixel size of 20 μm, 1000 pixels per side of the focal plane array sampling the scene and acousto-optic tunable filters or waveguide spatial heterodyne imagers that simulate a swath up to 90 km, image up to 86 wavebands with an SNR above 100. The tradeoff between spectral and spatial ranges sampled by the two baseline imager options has been highlighted.