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Personal cooling garment can effectively prevent human from heat injury and realize global energy saving. However, it is hard to optimize the system with simultaneously realize thermal comfort and high coefficient of performance. To overcome this challenge, a thermoelectric‐water hybrid cooling garment is designed. The key performance indicators of personal cooling garments and experimentally demonstrate the necessity of hybridizing thermoelectric cooler with the employed water cooling garment is first analyzed. Correspondingly, the influence of inlet temperature and volume flow rate are studied and optimized step by step. Finally, under the optimized inlet temperature of 24 °C and the volume flow rate of 5 L h−1, employing water as the cooling media, a coefficient of performance of 1.31 can be approached at the working time ranging from 10 to 60 min. This study demonstrates that the thermoelectric‐water hybrid cooling garment technology can realize an effective cooling with simultaneously high coefficient of performance and maintain thermal comfort. [ABSTRACT FROM AUTHOR]

Owing to the abundant reserves and low cost, sodium‐ion batteries (SIBs) have garnered unprecedented attention. However, their widespread adoption is hindered by the scarcity of alternative anodes with fast‐charging capability and high stability. To overcome this challenge, a fast‐charging SIB anode, N‐doped Bi/BiOCl embedded in a carbon framework (Bi/BiOCl@NC) with a fast Na+ transport channel and ultra‐high structural stability, is developed. During cycling in ether electrolyte, Bi/BiOCl@NC undergoes a remarkable transformation into a 3D porous skeleton, which significantly reduces the Na+ transport pathway and accommodates volume changes. By employing density functional theory calculations to simulate the storage behavior of Na+ in the structure, Bi/BiOCl@NC is theoretically characterized to have a low Na+ transport barrier (0.056 eV) and outstanding electronic conductivity. Such unique characteristics induce Bi/BiOCl@NC anode to have an ultra‐high Na+ storage capacity of 410 mAh·g−1 at 20 A·g−1 and exhibit outstanding cycling stability with over 2300 cycles at 10 A·g−1. This study provides a rational scenario for the fast‐charging anode design and will enlighten more advanced research to promote the exploitation of SIBs. [ABSTRACT FROM AUTHOR]

Owing to promising room‐temperature thermoelectric properties, n‐type Ag2Se has been considered as an alternative for Bi2Te3. Herein, a carrier separation strategy is realized by compositing an insulating electron donor, polyethyleneimine (PEI), with the n‐type Ag2Se. Inhomogeneous distribution of PEI can attract the minority carriers (holes) in the n‐type Ag2Se matrix, while the separated minority carriers can avoid significant scattering of the main carriers based on coulomb repulsion, leading to record‐high carrier mobility of 1551.99 cm2 V−1 s−1 and an improved S2σ of 22.39 µW m−1 K−2 at 300 K for 6 mol% PEI/Ag2Se composite film. Moreover, with PEI acting as a binder, the resistance of 6 mol% PEI/Ag2Se composite film only increases by 6.5% after bending 1000 cycles at the radius of 6 mm, showing high stability. The assembled flexible device based on 6 mol% PEI/Ag2Se composite films exhibits an excellent power density of 73.93 W m−2 at a temperature difference of 50 K, showing potential applications in powering generation for wearable electronics. [ABSTRACT FROM AUTHOR]

Germanium telluride (GeTe) with ultrafast ferroelectric transition, Rashba‐like electronic transport, and anomalous phonon anharmonicity are historically studied for potential memorizing and thermoelectric applications. Due to recent breakthroughs in spintronics, valleytronics, orbitronics, pre‐eminent GeTe thermoelectrics have re‐attracted enormous interest from both academia and industries, with increasing reports of significant figure‐of‐merit over 2.7 and the maximum efficiency of up to 17.0%. Here, the emerging trends in advancing GeTe thermoelectrics, starting from fundamentals of phase transformation, crystal structure, bonding mechanisms, and transport characteristics, with a highlight on the roles of Ge_4s2 lone pairs, are timely overviewed. Technical insights in synthesis, characterization, property measurement, and computation are then summarized. After that, several innovative strategies for increasing the figure‐of‐merit, including entropy engineering, nanostructuring, and hybridization, which will further benefit near‐room‐temperature and n‐type performance, are examined. Moreover, high‐density and high‐efficiency devices with broad working temperatures are discussed as a result of rational configurational and interfacial design. In the end, perspective remarks on the challenges and outlook envisaging for next‐generation GeTe thermoelectrics, which will play a prominent role in future energy and environmental landscapes, are provided. [ABSTRACT FROM AUTHOR]

Ionic thermoelectric materials have attracted increasing attention because of their high flexibility and high Seebeck coefficient. However, their insufficient thermoelectric performance and long‐standing processing limit their practical applications. To achieve exotic ionic thermoelectric materials, here, a graphene oxide (GO) modified acrylamide ionogel is designed with high thermoelectric performance and flexibility. Detailed structural characterizations confirm that the uniform dispersion of GO particles in the ionogel structure enables a power factor of 753.0 µW m−1 K−2 and a promising ZT value of 0.19. Additionally, the as‐prepared ionic thermoelectric thin film shows excellent flexibility, stretchability, and self‐adhesiveness. An integrated device, assembled by the as‐prepared ionogel films, can generate an optimal output power density of 1.32 mW cm−2 with a temperature difference of 20 K, indicating great potential for wearable electronics. This work provides insight for searching long‐term, high‐performance ionic thermoelectric materials. [ABSTRACT FROM AUTHOR]

With the increasing demand for energy and the climate challenges caused by the consumption of traditional fuels, there is an urgent need to accelerate the adoption of green and sustainable energy conversion and storage technologies. The integration of flexible thermoelectrics with other various energy conversion technologies plays a crucial role, enabling the conversion of multiple forms of energy such as temperature differentials, solar energy, mechanical force, and humidity into electricity. The development of these technologies lays the foundation for sustainable power solutions and promotes research progress in energy conversion. Given the complexity and rapid development of this field, this review provides a detailed overview of the progress of multifunctional integrated energy conversion and storage technologies based on thermoelectric conversion. The focus is on improving material performance, optimizing the design of integrated device structures, and achieving device flexibility to expand their application scenarios, particularly the integration and multi-functionalization of wearable energy conversion technologies. Additionally, we discuss the current development bottlenecks and future directions to facilitate the continuous advancement of this field. [ABSTRACT FROM AUTHOR]

Nanoscale defects can induce the effective modulation of carrier concentration, mobility, and phonon scattering to secure high thermoelectric performance in semiconductors. However, it is still limited to effectively controlling nanoscale defects in thermoelectric materials. Here, argon plasma bombardment is employed to introduce a large number of point defects and dislocations in microcrystalline SnSe powders, synthesized by a solvothermal method. After sintering these powders into polycrystalline bulk materials, bulk SnSe shows the ZT increasing by up to 66.7% (from 0.36 to 0.6 at 773 K). Through detailed micro/nanostructure characterizations and first‐principles calculations, the underlying mechanism is elucidated for the evaluation of thermoelectric performance. This work provides a deep understanding of the mechanism of nanoscale defects in modulating thermoelectric performance and presents experimental evidence and experience for the design and synthesis of efficient thermoelectric materials, making significant contributions to future green energy technologies. [ABSTRACT FROM AUTHOR]

Hydrogels are renowned for their complex structures and unique physicochemical properties, establishing them as key materials in bioenergy harvesting applications. They are used in various applications, including triboelectric nanogenerators, piezoelectric, hydraulic, thermoelectric, and biofuel cells. Among these, hydrogels as key materials for thermoelectric applications represent a technology capable of continuously converting biological energy (thermal energy) into electrical energy. This technology shows great potential and commercial value in body monitoring, energy storage, and human‐machine interaction applications. Given its rapid development, a timely review focusing on the research progress of hydrogels and their composites in thermoelectric technology is presented. This review discusses various types of hydrogels used for thermoelectric power generation and refrigeration, their unique properties, strategies for enhancing their thermoelectric performance, and their applications in the field. Finally, the remaining challenges and feasible strategies are identified for improving the efficiency, stability, application range, and system‐level integration of next‐generation hydrogels for thermoelectric applications. [ABSTRACT FROM AUTHOR]

Rhombohedral GeSe is a promising p‐type thermoelectric material, noted for its low toxicity, environmental friendliness, and greater affordability compared with tellurides. However, its thermoelectric performance still requires further enhancement for practical applications. In this work, a highly competitive peak figure of merit (ZT) of 1.24 at 623 K for p‐type polycrystalline Ge0.895Cu0.005Se0.9(AgBiTe2)0.1, along with a high average ZT of 0.74 between 323 K and 623 K is reported. Comprehensive micro/nanostructural characterization reveals that alloying with AgBiTe2 and doping with Cu successfully induce dense point defects, secondary Ag2Te phases, and various nanoprecipitates in the GeSe matrix. These abundant crystalline and lattice defects result in strong phonon scattering, leading to an ultra‐low lattice thermal conductivity of 0.35 W m−1 K−1 at 623 K. Moreover, Cu doping enhances carrier mobility, promoting decoupling between carriers and phonons. This allows for low thermal conductivity and high power factor coexistence to achieve a high ZT. Additionally, with a temperature difference of 325 K, the theoretical energy conversion efficiency reaches up to 8.5%, indicating great potential for medium‐temperature device applications. This work suggests that Cu doping is an effective strategy for achieving high thermoelectric performance in rhombohedral GeSe‐based materials. [ABSTRACT FROM AUTHOR]

One-dimensional metallic transition-metal chalcogenide nanowires (TMC-NWs) hold promise for interconnecting devices built on two-dimensional (2D) transition-metal dichalcogenides, but only isotropic growth has so far been demonstrated. Here we show the direct patterning of highly oriented Mo6Te6 NWs in 2D molybdenum ditelluride (MoTe2) using graphite as confined encapsulation layers under external stimuli. The atomic structural transition is studied through in-situ electrical biasing the fabricated heterostructure in a scanning transmission electron microscope. Atomic resolution high-angle annular dark-field STEM images reveal that the conversion of Mo6Te6 NWs from MoTe2 occurs only along specific directions. Combined with first-principles calculations, we attribute the oriented growth to the local Joule-heating induced by electrical bias near the interface of the graphite-MoTe2 heterostructure and the confinement effect generated by graphite. Using the same strategy, we fabricate oriented NWs confined in graphite as lateral contact electrodes in the 2H-MoTe2 FET, achieving a low Schottky barrier of 11.5 meV, and low contact resistance of 43.7 Ω µm at the metal-NW interface. Our work introduces possible approaches to fabricate oriented NWs for interconnections in flexible 2D nanoelectronics through direct metal phase patterning. Nanowires made of transition metal chalcogenides are promising as connecting elements in devices, but so far only isotropic growth is feasible. Here, the authors regulate the growth orientation of nanowires by introducing external stimuli into graphite-confined MoTe2 heterostructures. [ABSTRACT FROM AUTHOR]

The creation of hierarchical nanostructures can effectively strengthen phonon scattering to reduce lattice thermal conductivity for improving thermoelectric properties in inorganic solids. Here, we use Zn doping to induce a remarkable reduction in the lattice thermal conductivity in SnTe, approaching the theoretical minimum limit. Microstructure analysis reveals that ZnTe nanoprecipitates can embed within SnTe grains beyond the solubility limit of Zn in the Zn alloyed SnTe. These nanoprecipitates result in a substantial decrease of the lattice thermal conductivity in SnTe, leading to an ultralow lattice thermal conductivity of 0.50 W m−1 K−1 at 773 K and a peak ZT of ~0.48 at 773 K, marking an approximately 45 % enhancement compared to pristine SnTe. This study underscores the effectiveness of incorporating ZnTe nanoprecipitates in boosting the thermoelectric performance of SnTe‐based materials. [ABSTRACT FROM AUTHOR]

P-type Fe3CoSb12-based skutterudite thin films are successfully fabricated, exhibiting high thermoelectric performance, stability, and flexibility at medium-to-high temperatures, based on preparing custom target materials and employing advanced pulsed laser deposition techniques to address the bonding challenge between the thin films and high-temperature flexible polyimide substrates. Through the optimization of fabrication processing and nominal doping concentration of Ce, the thin films show a power factor of >100 μW m−1 K−2 and a ZT close to 0.6 at 653 K. After >2000 bending cycle tests at a radius of 4 mm, only a 6 % change in resistivity can be observed. Additionally, the assembled p-type Fe3CoSb12-based flexible device exhibits a power density of 135.7 µW cm−2 under a temperature difference of 100 K with the hot side at 623 K. This work fills a gap in the realization of flexible thermoelectric devices in the medium-to-high-temperature range and holds significant practical application value. The authors fabricate p-type Fe3CoSb12-based skutterudite films exhibiting high thermoelectric performance, stability, and flexibility at medium-to-high temperatures, based on preparing custom target materials and pulsed laser deposition techniques. [ABSTRACT FROM AUTHOR]