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In this work, the influence of temperature on the corrosion behavior of AlCoCrFeNi2.1 eutectic high-entropy alloy in a chloride-containing sulfuric acid solution was investigated using electrochemical measurement, X-ray photoelectron spectroscopy, and scanning electron microscopy. Results show that the passive film of AlCoCrFeNi2.1 is stable in chloride-containing sulfuric acid solutions at low temperatures, while an unstable film forms on the alloy at high temperatures. Furthermore, temperature changes the proportion of hydroxide and oxide in Fe and Cr, but it has no noticeable effect on Al and Ni, which is a significant factor on the passive behavior. L12 phase exhibits good corrosion resistance at different temperatures. Pitting occurred on B2 phase in the chloride-containing sulfuric acid solution at a low temperature of 5 °C, while pitting and dissolution take place on AlCoCrFeNi2.1 in the acid solution at room temperature and above. [ABSTRACT FROM AUTHOR]

Purpose: This paper aims to analyze a failure case of a P110 tube in a CO2 flooding well. Design/methodology/approach: The chemical composition, microstructure and mechanical properties of the failed P110 tubing steel were tested, and met the API Spec 5CT standard. The fractures were investigated by scanning electron microscopy and energy dispersive spectroscopy. Findings: Fracture was induced by stress corrosion cracking (SCC) and that the stress concentration caused by the mechanical damage played an important role in the failure. The failure case is a SCC failure affected by mechanical damage and galvanic corrosion. Originality/value: The effect of the infiltration of groundwater was studied in the failure case. The stress concentration caused by the mechanical damage played an important role in the failure. [ABSTRACT FROM AUTHOR]

One-dimensional nanostructured SnO2 has attracted intense research interest due to its advantageous properties, including a large surface-to-volume ratio, high optical transparency and typical n-type properties. However, how to fabricate high-performance and multifunctional electronic devices based on 1D nanostructured SnO2 via low-cost and efficient preparation techniques is still a huge challenge. In this work, a low-cost, one-step electrospun technology was employed to synthesize the SnO2 nanofiber (NF) and nanotube (NT) arrays. The electrical and photoelectrical parameters of SnO2 NTs-based devices were effectively controlled through simple changes to the amount of Sn in the precursor solution. The optimal 0.2 SnO2 NTs-based field effect transistors (FETs) with 0.2 g SnCl2*4H2O per 5 ml in the precursor solution exhibit a high saturation current (∼9 × 10−5 A) and a large on/off ratio exceeding 2.4 × 106. Additionally, 0.2 SnO2 NTs-based FET also exhibit a narrowband deep-UV photodetectivity (240–320 nm), including an ultra-high photocurrent of 307 μA, a high photosensitivity of 2003, responsibility of 214 A W−1 and detectivity of 2.19 × 1013 Jones. Furthermore, the SnO2 NTs-based transparent photodetectors were as well be integrated with fluorine-doped tin oxide glass and demonstrated a high optical transparency and photosensitivity (∼199). All these results elucidate the significant advantages of these electrospun SnO2 NTs for next-generation multifunctional electronics and transparent photonics. [ABSTRACT FROM AUTHOR]

This study investigated the effect of flowing velocity and impact angle on the fluid-accelerated corrosion (FAC) of X65 pipeline steel in a wet CO2-containing environment by corrosion morphology analysis, electrochemical measurement, and hydromechanical numerical analysis. It has been found that the corrosion behavior was controlled by the ion diffusion rate and shear stress due to the flowing gas. With an increase in the flowing velocity, the pitting corrosion initially decreased and then increased when the flowing velocity exceeded 14 m/s; this increase is caused by the augmentation of shear stress. When the impact angle decreased, the position of serious corrosion gradually moved outwards. [ABSTRACT FROM AUTHOR]

Abstract: Although significant progress has been made towards using ZnO nanofibers (NFs) in future high‐performance and low‐cost electronics, they still suffer from insufficient device performance caused by substantial surface roughness (i.e., irregularity) and granular structure of the obtained NFs. Here, a simple one‐step electrospinning process (i.e., without hot‐press) is presented to obtain controllable ZnO NF networks to achieve high‐performance, large‐scale, and low‐operating‐power thin‐film transistors. By precisely manipulating annealing temperature during NF fabrication, their crystallinity, grain size distribution, surface morphology, and corresponding device performance can be regulated reliably for enhanced transistor performances. For the optimal annealing temperature of 500 °C, the device exhibits impressive electrical characteristics, including a small positive threshold voltage (Vth) of ≈0.9 V, a low leakage current of ≈10−12 A, and a superior on/off current ratio of ≈106, corresponding to one of the best‐performed ZnO NF devices reported to date. When high‐κ AlOx thin films are employed as gate dielectrics, the source/drain voltage (VDS) can be substantially reduced by 10× to a range of only 0–3 V, along with a 10× improvement in mobility to a respectable value of 0.2 cm2 V−1 s−1. These results indicate the potential of these nanofibers for use in next‐generation low‐power devices. [ABSTRACT FROM AUTHOR]

Although In2O3 nanofibers (NFs) are considered as one of the fundamental building blocks for future electronics, the further development of these NFs devices is still seriously hindered by the large leakage current, low on/off current ratio (Ion/Ioff), and large negative threshold voltage (VTH) due to the excess carriers existed in the NFs. A simple one‐step electrospinning process is employed here to effectively control the carrier concentration of In2O3 NFs by selectively doping strontium (Sr) element to improve their electrical device performance. The optimal devices (3.6 mol% Sr doping concentration) can yield the high field‐effect mobility (μfe ≈ 3.67 cm2 V−1 s−1), superior Ion/Ioff ratio (≈108), and operation in the energy‐efficient enhancement‐mode. High‐κ Al2O3 thin films can also be employed as the gate dielectric to give the gate voltage greatly reduced by 10× (from 40 to 4 V) and the μfe substantially increased by 4.8× (to 17.2 cm2 V−1 s−1). The electrospun E‐mode Sr‐In2O3 NF field‐effect transistors (NFFETs) can as well be integrated into full swing of inverters with excellent performances, further elucidating the significant advance of this electrospinning technique toward practical applications for future low‐cost, energy‐efficient, large‐scale, and high‐performance electronics. High‐performance, low‐power, and enhancement‐mode Sr‐doped In2O2 nanofiber (NFs) transistors are demonstrated with impressive electrical characteristics, including a high mobility (3.67 cm2 V−1 s−1) and an impressive Ion/Ioff ratio (≈108). The device operation voltage can be decreased from 40 to 4 V by further employing high‐κ Al2O3 thin films as gate dielectrics, indicating the potency of these NFs for next‐generation electronics. [ABSTRACT FROM AUTHOR]

Lanthanide-doped scintillators have the ability to convert the absorbed X-ray irradiation into ultraviolet (UV), visible (Vis), or near-infrared (NIR) light. Lanthanide-doped scintillators with excellent persistent luminescence (PersL) are emerging as a new class of PersL materials recently. They have attracted great attention due to their unique "self-luminescence" characteristic and potential applications. In this review, we comb through and focus on current developments of lanthanide-doped persistent luminescent scintillators (PersLSs), including their PersL mechanism, synthetic methods, tuning of PersL properties (e. g. emission wavelength, intensity, and duration time), as well as their promising applications (e. g. information storage, encryption, anti-counterfeiting, bio-imaging, and photodynamic therapy). We hope this review will provide valuable guidance for the future development of PersLSs., (© 2024 Wiley-VCH GmbH.)

One-dimensional nanostructured SnO 2 has attracted intense research interest due to its advantageous properties, including a large surface-to-volume ratio, high optical transparency and typical n-type properties. However, how to fabricate high-performance and multifunctional electronic devices based on 1D nanostructured SnO 2 via low-cost and efficient preparation techniques is still a huge challenge. In this work, a low-cost, one-step electrospun technology was employed to synthesize the SnO 2 nanofiber (NF) and nanotube (NT) arrays. The electrical and photoelectrical parameters of SnO 2 NTs-based devices were effectively controlled through simple changes to the amount of Sn in the precursor solution. The optimal 0.2 SnO 2 NTs-based field effect transistors (FETs) with 0.2 g SnCl 2 *4H 2 O per 5 ml in the precursor solution exhibit a high saturation current (∼9 × 10 -5 A) and a large on/off ratio exceeding 2.4 × 10 6 . Additionally, 0.2 SnO 2 NTs-based FET also exhibit a narrowband deep-UV photodetectivity (240-320 nm), including an ultra-high photocurrent of 307 μA, a high photosensitivity of 2003, responsibility of 214 A W -1 and detectivity of 2.19 × 10 13 Jones. Furthermore, the SnO 2 NTs-based transparent photodetectors were as well be integrated with fluorine-doped tin oxide glass and demonstrated a high optical transparency and photosensitivity (∼199). All these results elucidate the significant advantages of these electrospun SnO 2 NTs for next-generation multifunctional electronics and transparent photonics.

In recent years, it is urgent and challenging to fabricate highly sensitive and selective gas sensors for breath analyses. In this work, Sr-doped cubic In 2 O 3 /rhombohedral In 2 O 3 homojunction nanowires (NWs) are synthesized by one-step electrospun technology. The Sr doping alters the cubic phase of pure In 2 O 3 into the rhombohedral phase, which is verified by the high-resolution transmittance electron microscopy, X-ray diffraction, and Raman spectroscopy, and is attributable to the low cohesive energy as calculated by the density functional theory (DFT). As a proof-of-concept of fatty liver biomarker sensing, ethanol sensors are fabricated using the electrospun In 2 O 3 NWs. The results show that 8 wt % Sr-doped In 2 O 3 shows the highest ethanol sensing performance with a high response of 21-1 ppm, a high selectivity over other interfering gases such as methanol, acetone, formaldehyde, toluene, xylene, and benzene, a high stability measured in 6 weeks, and also a high resistance to high humidity of 80%. The outstanding ethanol sensing performance is attributable to the enhanced ethanol adsorption by Sr doping as calculated by DFT, the stable rhombohedral phase and the preferred (104) facet exposure, and the formed homojunctions favoring the electron transfer. All these results show the effective structural modification of In 2 O 3 by Sr doping, and also the great potency of the homojunction Sr-doped In 2 O 3 NWs for highly sensitive, selective, and stable breath ethanol sensing.