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65. 11‐2: Technology Developments in High‐Resolution FMM‐free OLED and BEOL IGZO TFTs for Power‐Efficient Microdisplays

67. 28nm pitch single exposure patterning readiness by metal oxide resist on 0.33NA EUV lithography

69. UV nanosecond laser annealing for Ru interconnects

70. On a more accurate assessment of scaled copper/low-k interconnects performance

71. Buried Power Rail Integration With FinFETs for Ultimate CMOS Scaling

72. (Invited) Sub-40mV Sigma VTH Igzo nFETs in 300mm Fab

74. Characterization of interface interactions between Graphene and Ruthenium

75. Ru as an alternative material for advanced contacts

78. 300mm IGZO nFETs with low-T Ru contacts for localized doping and increased BEOL compatibility

79. (Invited) Alternative Metals for Beyond-Cu Interconnects

83. Study of Ni-Silicide Contacts to Si:C Source/Drain.

86. Reconfigurable neuromorphic synapse interconnects with TFTs

88. RC Benefits of Advanced Metallization Options

90. Reaction temperature and time dependence of MoCl5 intercalation to few-layer graphene.

91. Modeling of Edge Scattering in Graphene Interconnects

92. Subtractive Etch of Ruthenium for Sub-5nm Interconnect

93. Alternative Metals: From AB Initio Screening to Calibrated Narrow Line Models

95. High-Aspect-Ratio Ruthenium Lines for Buried Power Rail

97. Sub-100 nm2 Cobalt Interconnects

98. Electrical comparison of iN7 EUV hybrid and EUV single patterning BEOL metal layers

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