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Proteins of the alkylation B (AlkB) superfamily show RNA demethylase activity removing methyl adducts from N 6 -methyladenosine (m 6 A). m 6 A is a reversible epigenetic mark of RNA that regulates human virus replication but has unclear roles in plant virus infection. We focused on Potyvirus-the largest genus of plant RNA viruses-and report here the identification of AlkB domains within P1 of endive necrotic mosaic virus (ENMV) and an additional virus of a putative novel species within Potyvirus. We show that Nicotiana benthamiana m 6 A levels are reduced by infection of plum pox virus (PPV) and potato virus Y (PVY). The two potyviruses lack AlkB and the results suggest a general involvement of RNA methylation in potyvirus infection and evolution. Methylated RNA immunoprecipitation sequencing of virus-infected samples showed that m 6 A peaks are enriched in plant transcript 3' untranslated regions and in discrete internal and 3' terminal regions of PPV and PVY genomes. Down-regulation of N. benthamiana AlkB homologues of the plant-specific ALKBH9 clade caused a significant decrease in PPV and PVY accumulation. In summary, our study provides evolutionary and experimental evidence that supports the m 6 A implication and the proviral roles of AlkB homologues in Potyvirus infection., (© 2022 The Authors. Molecular Plant Pathology published by British Society for Plant Pathology and John Wiley & Sons Ltd.)

Solar blind ultraviolet (SBUV) self-powered photodetectors (PDs) have a great number of applications in civil and military exploration. Ga 2 O 3 is a prospective candidate for SBUV detection owing to its reasonable bandgap corresponding to the SBUV waveband. Nevertheless, the previously reported Ga 2 O 3 photovoltaic devices had low photoresponse performance and were still far from the demands of practical application. Herein, we propose an idea of using spiro-MeOTAD (spiro) as the SBUV transparent conductive layer to construct p-i-n PDs (p-spiro/Ga 2 O 3 /n-Si). With the aid of double built-in electric fields, the designed p-i-n PDs could operate without any external power source. Furtherly, the influence of spiro thickness on improving the photoelectric performance of devices is investigated in detail and the optimum device is achieved, translating to a peak responsivity of 192 mA/W upon a weak 254 nm light illumination of 2 μW/cm 2 at zero bias. In addition, the I - t curve of our PD shows binary response characteristics and a four-stage current response behavior under a small forward bias, and also, its underlying working mechanism is analyzed. In sum, this newly developed device presents great potential for booming the high energy-efficient optoelectronic devices in the short run.