51. Femtosecond laser-induced crystallization in amorphous Ge2Sb2Te5 films
- Author
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Zhang, Guangjun, Gu, Donghong, Gan, Fuxi, Jiang, Xiongwei, and Chen, Qingxi
- Subjects
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IRRADIATION , *ELECTRON microscopes , *SCANNING electron microscopes , *X-ray diffraction - Abstract
Abstract: Crystallization in amorphous Ge2Sb2Te5 films by irradiation with femtosecond laser was investigated. The reflectivity and X-ray diffraction measurements confirmed that the crystalline state has been achieved in amorphous Ge2Sb2Te5 films under the irradiation of femtosecond laser with an average power of 65 mW at a frequency of 1000 Hz and a pulsed width of 120 fs. The surface morphology before and after femtosecond laser irradiation was studied by scanning electron microscope; results showed that the surface of films with irradiation of femtosecond laser was composed of some the crystallized micro-region. [Copyright &y& Elsevier]
- Published
- 2005
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