472 results on '"Zhang, Zi-Hui"'
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52. Conclusions and Outlook
53. Increase the IQE by Improving the Crystalline Quality for DUV LEDs
54. Improve the Hole Injection to Enhance the IQE for DUV LEDs
55. The Light Extraction Efficiency for DUV LEDs
56. High Gain Filter Circular Patch Antenna Without Extra Circuits Based on SISL
57. Recent Advances on GaN-Based Micro-LEDs
58. Investigation of Off-State Stress Induced Degradation of SiC MOSFETs Under Short-Circuit Condition
59. Lattice-matched AlInN/GaN bottom DBR impact on GaN-based vertical-cavity-surface-emitting laser diodes: systematical investigations
60. Test Method for Decision Planning of Autonomous Vehicles Based on DQN Algorithm
61. 2.5 kV/1.95 GW/cm² AlGaN/GaN-Based Lateral Schottky Barrier Diodes With a High-k Field Plate to Reduce Reverse Current
62. Optimization Strategy of 4H-SiC Separated Absorption Charge and Multiplication Avalanche Photodiode Structure for High Ultraviolet Detection Efficiency
63. Improving the Current Spreading by Locally Modulating the Doping Type in the n-AlGaN Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
64. Effects of Meshed p-type Contact Structure on the Light Extraction Effect for Deep Ultraviolet Flip-Chip Light-Emitting Diodes
65. Valence subbands profile regulation in AlGaN quantum well based on k·p theory
66. Suppressing optical crosstalk for GaN/InGaN based flip-chip micro light-emitting diodes by using an air-cavity patterned sapphire substrate as a light filter
67. Optimizing metal/n-AlGaN contact by recessed AlGaN heterostructure with a polarization effect
68. GaN-Based Ultraviolet Phototransistor With Two Parallel Polarization-Doped Junctions and an Al$_{\text{0.20}}$Ga$_{\text{0.80}}$N Insertion Layer to Achieve Low Dark Current and High Detectivity
69. Improving the Performance of Free-pGaN Deep-Ultraviolet Light-Emitting Diodes by Embedding Self-Assembled Ni Nanoparticles Between p-AlGaN/p-Electrode
70. Influence of anti-phase surface relief structure on optical mode and laser output power for 450 nm GaN-based VCSELs
71. Graphene-based transparent conductive electrodes for GaN-based light emitting diodes: Challenges and countermeasures
72. Influence of affinity tags and tobacco PR1a signal peptide on detection, purification and bioactivity analyses of the small oomycete apoplastic effectors
73. Hybrid GaO/AlGaN/GaN Ultraviolet Detector With Gate Metal in the Grooved AlGaN Layer for Obtaining Low Dark Current and Large Detectivity
74. Balanced Resistivity in n-AlGaN Layer to Increase the Current Uniformity for AlGaN-Based DUV LEDs
75. Understanding omni-directional reflectors and nominating more dielectric materials for deep ultraviolet light-emitting diodes with inclined sidewalls.
76. Internal Quantum Efficiency for III-Nitride–Based Blue Light-Emitting Diodes
77. Hole Accelerator for III-Nitride Light-Emitting Diodes
78. On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes
79. Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency
80. GaN-Based Ultraviolet Phototransistor With Two Parallel Polarization-Doped Junctions and an Al0.20Ga0.80N Insertion Layer to Achieve Low Dark Current and High Detectivity
81. Impact of the Surface Recombination on the Thermal Properties for GaN-Based μLEDs
82. On the impact of the beveled mesa for GaN-based micro-light emitting diodes: electrical and optical properties
83. Supporting Outcome-Based Education Assessment and Evaluation-Educational Technology Solution of a Data Visualization Framework
84. GaN-based quasi-vertical Schottky barrier diode hybridized with p-NiO layer to achieve 1.1 kV breakdown voltage and enhance the current spreading effect
85. Local dielectric tunnel junction to manage the current distribution for AlGaN-based deep-ultraviolet light-emitting diodes with a thin p-GaN layer
86. A Buried HighkInsulator for Suppressing the Surface Recombination for GaN-Based Micro-Light-Emitting Diodes
87. Improving the performance for flip-chip AlGaN-based deep ultraviolet light-emitting diodes using surface textured Ga-face n-AlGaN
88. 3-D Simulation Study of a Normally-OFF GaN Lateral Multi-Channel JFET With Optimized Electrical Field Transfer Terminal Structure
89. Interplay between various active regions and the interband transition for AlGaN-based deep-ultraviolet light-emitting diodes to enable a reduced TM-polarized emission.
90. Hybrid metal/Ga2O3/GaN ultraviolet detector for obtaining low dark current and high responsivity
91. Enhanced Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diode Using a p+-GaN/SiO2/ITO Tunnel Junction
92. Impact of p-AlGaN/GaN hole injection layer on GaN-based vertical cavity surface emitting laser diodes [Invited]
93. Simulation study for GaN-based hybrid trench MOS barrier Schottky diode with an embedded p-type NiO termination: increased forward current density and enhanced breakdown voltage
94. Enhanced optical output of GaN-based near-ultraviolet light-emitting diodes using an ultra-thin air cavity nanopatterned sapphire substrate
95. On the impact of a metal–insulator–semiconductor structured n-electrode for AlGaN-based DUV LEDs
96. Numerical investigations into polarization-induced self-powered GaN-based MSM photodetectors
97. GaN-based quasi-vertical Schottky barrier diodes with the sidewall field plate termination for obtaining low leakage current and high breakdown voltage
98. Quantum barriers with a polarization self-screening effect for GaN-based VCSELs to increase the electron-hole stimulated recombination and output performance
99. Three-dimensional metal–semiconductor–metal bipolar ultraviolet phototransistor based on GaN p-i-n epilayer
100. Large scale synthesis of full-color emissive carbon dots from a single carbon source by a solvent-free method
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