51. Analysis of the electronic structures of 3d transition metals doped CuGaS2based on DFT calculations
- Author
-
Zhou Da-Cheng, Yi Juan, and Zhao Zongyan
- Subjects
Materials science ,Condensed matter physics ,Band gap ,Doping ,Electronic structure ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Absorption edge ,Transition metal ,Impurity ,Computational chemistry ,Materials Chemistry ,Density functional theory ,Electrical and Electronic Engineering ,Absorption (electromagnetic radiation) - Abstract
3d transition metals doped CuGaS2 are considered as possible absorbing material candidates for intermediated band thin film solar cells. The electronic structure and optical properties of 3d transition metals doped CuGaS2 are investigated by using density functional theory calculations with the GGA + U method in the present work. The doping with 3d transition metals does not obviously change the crystal structure, band gap, and optical absorption edge of the CuGaS2 host. However, in the case of CuGa1−xTMxS2 (TM = Ti, V, Cr, Fe, and Ni), there is at least one distinct isolated impurity energy level in the band gap, and the optical absorption is enhanced in the ultraviolet-light region. Therefore, these materials are ideal absorber material candidates for intermediated band thin film solar cells. The calculated results are very well consistent with experimental observations, and could better explain them.
- Published
- 2014
- Full Text
- View/download PDF