3,026 results on '"Bimberg, D."'
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102. Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands
103. Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures
104. Three-dimensionally confined excitons and biexcitons in submonolayer-CdSe/ZnSe superlattices
105. Temperature dependent optical properties of self-organized InAs/GaAs quantum dots
106. InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 µm
107. Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host
108. Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation
109. Volmer-Weber and Stranski-Krastanov InAs-(AI,Ga)As quantum dots emitting at 1.3 mu m
110. Electric-Field-Enhanced Thermal Emission from Osmium-Related Deep Level in n-GaAs
111. Testing the Lateral Resolution in the Nanometre Range with a New Type of Certified Reference Material
112. Room-temperature lasing of strain-compensated CdSe/ZnSSe quantum island laser structures
113. Strain-driven self-organization of nanostructures on semiconductor surfaces
114. Effect of the quantum-dot surface density in the active region on injection-laser characteristics
115. Formation of InSb quantum dots in a GaSb matrix
116. Quantum dot heterostructures: Fabrication, properties, lasers (Review)
117. Injection lasers based on InGaAs quantum dots in an AlGaAs matrix
118. RT lasing via nanoscale CdSe islands in a (Zn,Mg)(S,Se) matrix
119. Growth, Spectroscopy, and Laser Application of Self-Ordered III–V Quantum Dots
120. Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates
121. On gain saturation in quantum dot semiconductor optical amplifiers
122. Stability of an hexagonal array of coherently strained conical islands against Ostwald ripening
123. Direct observation of charge-carrier capture in an array of self-assembled InAs/GaAs quantum dots
124. Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix
125. Direct formation of InGaAs/GaAs quantum dots during submonolayer epitaxies from molecular beams
126. Thermal stability of vertically coupled InAs-GaAs quantum dot arrays
127. Modulation of a quantum well potential by a quantum-dot array
128. Maskless selective area growth of InP on Sub-μm V-groove patterned Si(001)
129. Optical and crystallographic properties of high perfection InP grown on Si(111)
130. Control of ordering in GaInP and effect on bandgap energy
131. Strain distribution in InP grown on patterned Si: Direct visualization by cathodoluminescence wavelength imaging
132. Formation of GaAsN nanoinsertions in a GaN matrix
133. Reversibility of the Island Shape, Volume and Density in Stranski-Krastanow Growth
134. Electronic properties of InAs/GaAs quantum dots
135. Monte Carlo Simulation of the Self-Organized Growth of Quantum Dots with Anisotropic Surface Diffusion
136. Novel Quantum Dot Based Memories with Many Days of Storage Time: Last Steps towards the Holy Grail?
137. Many-particle effects in self-organized quantum dots
138. Biexcitons in self-organized InAs/GaAs quantum dots: an optical probe for structural properties
139. Diffuse X-ray scattering of InGaAs/GaAs quantum dots
140. Ripening of self-organized InAs quantum dots
141. Energy-selective charging of type-II GaSb/GaAs quantum dots
142. Observation of monolayer-splitting for InAs/GaAs quantum dots
143. Spectral hole burning in self-organized quantum dots
144. Coulomb binding of electrons to multiply charged GaSb/GaAs self-assembled quantum dots
145. Pulsed magnetic fields as a probe of self-assembled semiconductor nanostructures
146. Excitonic Rabi oscillations in a quantum dot: local field impact
147. Optical properties of InGaN quantum dots
148. Optimization of GaN MOVPE growth on patterned Si substrates using spectroscopic in situ reflectance
149. Influence of the reactor total pressure on optical properties of MOCVD grown InGaN layers
150. Alternative precursor growth of quantum dot-based VCSELs and edge emitters for near infrared wavelengths
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