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108. Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation

109. Volmer-Weber and Stranski-Krastanov InAs-(AI,Ga)As quantum dots emitting at 1.3 mu m

115. Formation of InSb quantum dots in a GaSb matrix

132. Formation of GaAsN nanoinsertions in a GaN matrix

136. Novel Quantum Dot Based Memories with Many Days of Storage Time: Last Steps towards the Holy Grail?

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