101. Improvement of Fin Bridge Defect for Finfets Technology
- Author
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Junhong Zhao, Jiwei Zhang, and Hai Zhao
- Subjects
Materials science ,Yield (engineering) ,Silicon ,medicine.medical_treatment ,chemistry.chemical_element ,Substrate (electronics) ,Surface finish ,Fin (extended surface) ,Mandrel ,chemistry ,Resist ,medicine ,Composite material ,Bridge (dentistry) - Abstract
With FinFETs technology reaches 14nm and beyond, Fin bridge defect has become the one of most major yield killer defects in Fin loop. In this paper, the formation mechanism and improvement methods of Fin bridge defect were studied. The results showed that the pre-layer related defects such as bump defect and residue related defect, e.g., mandrel spacer residue and resist scum produced in self-aligned multi-pattering process could induce Fin bridge defect. This defect could be effectively eliminated by improving film roughness, optimizing the wet clean condition and adding de-scum in substrate etch process.
- Published
- 2021
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