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A simulation method for high frequency noise performance of MOSFETs is presented.

For the first time, internal spacers have been introduced in multichannel CMOSFET (MCFET) structures, featuring a decrease of the intrinsic CV/I delay by 39%. The process steps introduced for this new MCFET technological option are studied and optimized in order to achieve excellent ION/IOFF characteristics (NMOS: 2.33 mA/μm at 27 pA/μm and PMOS: 1.52 mA/μm at 38 pA/μm). A gate capacitance Cgg reduction of 32% is measured, thanks to S-parameter extraction. Moreover, a significant improvement of the analogical figure of merit is measured compared with optimized fully depleted silicon-on-insulator planar reference; the voltage gain AVI (= gm /gds) is improved by 92%. [ABSTRACT FROM AUTHOR]

A Langevin approach to understand the noise of microwave devices is presented. The device is represented by its equivalent circuit with the internal noise sources included as stochastic processes. From the circuit network analysis, a stochastic integral equation for the output voltage is derived and from its power spectrum the noise figure as a function of the operating frequency is obtained. The theoretical results have been compared with experimental data obtained by the characterization of an HEMT transistor series (NE20283A, by NEC) from 6 to 18 GHz at a low noise bias point. The reported procedure exhibits good accuracy, within the typical uncertainty range of any experimental determination. The approach allows to extract all the information required for understanding the noise performance of the device without any restriction on the statistics of the noise sources. The results show the relevant noise phenomena from a new angle. [ABSTRACT FROM AUTHOR]