101. 1W/mm power pseudomorphic HFET with optimised recess technology
- Author
-
B. Bonte, Christophe Gaquiere, Didier Theron, and Y. Crosnier
- Subjects
Power-added efficiency ,Materials science ,business.industry ,Transconductance ,Optoelectronics ,Field-effect transistor ,Power semiconductor device ,High-electron-mobility transistor ,Electrical and Electronic Engineering ,Double heterostructure ,business ,Current density ,Power density - Abstract
The authors report record DC characteristics and RF performance of a power double heterostructure (DH) pseudomorphic (PM) InGaAs quantum well HFET. The device, with a 0.3*70 mu m/sup 2/ gate, exhibits an intrinsic transconductance as high as 720 mS/mm, a maximum current density of approximately 1 A/mm and delivers a state-of-the-art output power density of 1 W/mm with 5.7 dB linear gain and 38% power added efficiency at 33 GHz. A detailed analysis of the technological aspects and electrical characteristics of the device is proposed to explain these excellent performances. >
- Published
- 1994