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Grazing incidence small-angle x-ray scattering and atomic force microscopy have been used to systematically investigate the evolution of Si(100) surface morphology during normal-incidence Ar[SUP+] sputtering as a function of ion energy in the range of 100-500 eV. For ion energy ranges of 100-300 eV, two structures with distinct individual length scales and behaviors form on the surface. There is a smaller scale (lateral size of 20-50 nm) morphology that grows in scattering intensity and coarsens with time. There is also a larger scale (lateral size of approximately 100 nm) morphology that grows in scattering intensity but does not coarsen significantly in the time scales studied. At higher energies (400-500 eV), sputtering causes the Si(100) surface to become smoother on length scales smaller than 200 nm. [ABSTRACT FROM AUTHOR]

Ultraviolet photoluminescence, transmission electron microscopy and KOH etching were used to characterize extended defects in 4H-SiC epilayers grown at high growth rates (18 μm/h). Layers exhibited high densities of in-grown stacking faults and dislocation half-loops. The stacking faults were 8H Shockley-type faults. The Burgers vector of the dislocation half-loops was in the (0001) basal plane. Both defects nucleate within the epilayer at early stages of growth. Defect nucleation is directly correlated with high initial growth rate and is not related to any defects/heterogeneities in the substrate or epilayer. Epilayer growth by nucleation of two-dimensional islands is proposed as a possible mechanism for the formation of both defects, through nucleation of faulted Si-C bilayers. [ABSTRACT FROM AUTHOR]

Atomic layer deposition was employed to deposit relatively thick (∼30 nm) aluminum oxide (Al2O3) using trimethylaluminum and triply-distilled H2O precursors onto epitaxial graphene grown on the Si-face of silicon carbide. Ex situ surface conditioning by a simple wet chemistry treatment was used to render the otherwise chemically inert graphene surface more amenable to dielectric deposition. The obtained films show excellent morphology and uniformity over large (∼64 mm2) areas (i.e., the entire sample area), as determined by atomic force microscopy and scanning electron microscopy. X-ray photoelectron spectroscopy revealed a nearly stoichiometric film with reduced impurity content. Moreover, from capacitance-voltage measurements a dielectric constant of ∼7.6 was extracted and a positive Dirac voltage shift of ∼1.0 V was observed. The graphene mobility, as determined by van der Pauw Hall measurements, was not affected by the sequence of surface pretreatment and dielectric deposition. [ABSTRACT FROM AUTHOR]

The dominant recombination processes controlling the carrier lifetime in n-type 4H–SiC epitaxial layers grown with low concentrations of the Z1/2 defect (the dominant bulk lifetime killer), where Z1/2 no longer determines the lifetime, have been investigated by studying the variation in the carrier lifetime with temperature. The temperature dependent lifetimes were obtained primarily by low-injection photoluminescence decay for several low-Z1/2 epilayers over a wide temperature range. The results were fitted to simulations of the temperature dependent recombination rate, where bulk, surface and interface recombination was considered. No significant contribution from other bulk defects was observed, and upper limits to the bulk recombination rate were found to be consistent with the low Z1/2 concentrations measured in these materials. There was also no significant contribution from carrier capture at the epilayer/substrate interface, which is consistent with behavior expected at low injection for low-doped epilayers grown on n+ substrates. Corresponding high-injection measurements exhibited very different behavior, consistent with the surface/interface under flat-band conditions. Consequently, it is concluded that for low-Z1/2 materials, control of the carrier lifetime has not been transferred from Z1/2 to another bulk defect, but is instead dominated by surface and interface recombination. Simulations suggest that further enhancement of the total lifetime under the high injection conditions of a device structure would require very thick epilayers, effectively passivated surface and interface recombination and a further reduction in the remaining Z1/2 concentrations. The temperature dependence of the low-injection carrier lifetime was also found to provide a method to estimate the surface band bending and the surface defect density. [ABSTRACT FROM AUTHOR]

The impetus for dislocation motion in thin films is generally understood in terms of Peach-Koehler forces. For the case of III-nitride films grown on step-free 4H-SiC mesas, however, it is the gradient of the strain energy from the mesa edge that is capable of driving misfit dislocations. Using the strain profile as a function of the distance from the mesa edge and the line tension of the c-plane threading arms, we have calculated the excess stress driving the half loop from the mesa edge into the mesa interior. We have also compared the half-loop excess stress with the excess stress driving the tilt of threading edge dislocations, which has been proposed as one of the principal strain relief mechanisms in III-nitride films. The excess stress driving c-plane half loops ranges from a few 1000 MPa at the mesa edge to few 100 MPa towards the mesa interior, while the excess stress driving the tilt of threading edge dislocations is in excess of 20 000 MPa. The greater excess stress driving dislocation tilt, however, does not dominate strain relief for III-nitride films on step-free SiC mesas due to the difficulty in nucleating threading dislocations in the absence of interfacial steps. [ABSTRACT FROM AUTHOR]

Bulk growth of 4H-SiC is challenging due to the required high growth temperatures and gradients used in sublimation physical vapor transport that are difficult to control, particularly over large diameter boules. We used x-ray diffraction mapping to show concave crystal plane curvature in substrates from five commercial suppliers with two suppliers producing wafers with <=2° curvature. The extent of curvature varied little for substrates from any particular supplier. Maps of peak position and full width at half maximum from symmetric and asymmetric reflections were used to identify defective regions in the crystal. Closer examination of the rocking curves in the defective regions found a low density of low angle grain boundaries only in substrates from one supplier. [ABSTRACT FROM AUTHOR]

Although food handlers are often implicated as the source of infection in outbreaks of food-borne viral gastroenteritis, little is known about the timing of infectivity in relation to illness. We investigated a gastroenteritis outbreak among employees of a manufacturing company and found an association (RR = 14.1, 95% CI = 2.0-97.3) between disease and eating sandwiches prepared by 6 food handlers, 1 of whom reported gastroenteritis which had subsided 4 days earlier. Norwalk-like viruses were detected by electron microscopy or reverse transcriptase-polymerase chain reaction (RT-PCR) in stool specimens from several company employees, the sick food handler whose specimen was obtained 10 days after resolution of illness, and an asymptomatic food handler. All RT-PCR product sequences were identical, suggesting a common source of infection. These data support observations from recent volunteer studies that current recommendations to exclude food handlers from work for 48-72 h after recovery from illness may not always prevent transmission of Norwalk-like viruses because virus can be shed up to 10 days after illness or while exhibiting no symptoms.

The results of the present study indicate first that in the microsomal preparation, the components of the P-450 reduction system are heterogeneously distributed, comprising dissociable and nondissociable parts. Second, the P-450 reduction curve can be adequately described by a sum of two exponential functions, indicating two concurrent first-order reactions. Third, the two phases can be altered independently. The addition of the substrate increased the extent of the fast phase while it had little or no effect on that of the slow phase. Changes in the interaction of the dissociable and nondissociable components affected the extent of the slow phase while they were without effect on that of the fast phase. Experiments with different steroids indicated that the independence of the two phases is not due to functionally different P-450's and that the cytochrome reduced in both phases is essentially P-450C-21. The results are interpreted as follows: Transformation of P-450 from the low- to the high-spin state controls the total P-450 reduced. The rate and the biphasicity of the reduction are functions of the interaction of P-450 and the reductase.