101. Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202¯1) substrates
- Author
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T. Remmele, Oliver Brandt, Czeslaw Skierbiszewski, Ewa Grzanka, Caroline Chèze, Marcin Siekacz, Grzegorz Muziol, Tomasz Sochacki, C. Hauswald, Marta Sawicka, Robert Kucharski, Henryk Turski, Martin Albrecht, Szymon Grzanka, and M. Krysko
- Subjects
Photoluminescence ,Materials science ,Physics and Astronomy (miscellaneous) ,business.industry ,Wide-bandgap semiconductor ,Crystal growth ,Electroluminescence ,law.invention ,Semiconductor ,law ,Optoelectronics ,business ,Quantum well ,Molecular beam epitaxy ,Light-emitting diode - Abstract
Multi-quantum well (MQW) structures and light emitting diodes (LEDs) were grown on semipolar (202¯1) and polar (0001) GaN substrates by plasma-assisted molecular beam epitaxy. The In incorporation efficiency was found to be significantly lower for the semipolar plane as compared to the polar one. The semipolar MQWs exhibit a smooth surface morphology, abrupt interfaces, and a high photoluminescence intensity. The electroluminescence of semipolar (202¯1) and polar (0001) LEDs fabricated in the same growth run peaks at 387 and 462 nm, respectively. Semipolar LEDs with additional (Al,Ga)N cladding layers exhibit a higher optical output power but simultaneously a higher turn-on voltage.
- Published
- 2013
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