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101. Circuit design considerations for 100 GHz clock rates

102. Current status of GaN heterojunction bipolar transistors

103. Effects of device design on the thermal properties of HBTs

104. Effects of gate recess depth on pulsed in characteristics of AlGaN/GaN HFETs

105. Effects of device design on the thermal properties of InP-based HBTs

106. InP HBTs-present status and future trends

107. InP HBT integrated circuit technology with selectively implanted subcollector and regrown device layers

108. Strain mapping of Si devices with stress memorization processing

109. Impact of in situ carbon doping on implant damage and strain relaxation of epitaxial silicon germanium layer on silicon

110. Inp HBT Integrated Circuit Technology With Selectively Implanted Subcollector and Regrown Device Layers.

111. Gate postdoping to decouple implant/anneal for gate, source/drain, and extension: Maximizing polysilicon gate activation for 0.1 μm CMOS technologies

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