760 results on '"Kop’ev, P. S."'
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102. Thermal stability of vertically coupled InAs-GaAs quantum dot arrays
103. Influence of mismatch of the lattice parameters on the structural, optical, and transport properties of InGaAs layers grown by molecular beam epitaxy on InP(100) substrates
104. Modulation of a quantum well potential by a quantum-dot array
105. Temperature and density dependence of exciton lifetimes in GaAs/AlGaAs multiple quantum wells
106. Low-frequency noise in gallium nitride epitaxial layers with different degrees of order of mosaic structure
107. Photoluminescence and atomic force microscopy studies of InAs/InSb nanostructures grown by MBE
108. Electroluminescence of injection lasers based on vertically coupled quantum dots near the lasing threshold
109. Isotope-pure silicon layers grown by MBE
110. Waveguide InGaAsP/InP photodetectors for low-power autocorrelation measurements at 1.55 µm
111. Barrier-disorder induced exciton relaxation via LO-phonons in GaAs/Al x Ga1−x As multiple quantum wells
112. Preparation and properties of isotopically pure polycrystalline silicon
113. Treatment of inhomogeneous radiation broadening in quantum dot heterostructures described within the framework of the superradiation model
114. A spatially single-mode laser for a range of 1.25–1.28 μm on the basis of InAs quantum dots on a GaAs substrate
115. Gain characteristics of quantum-dot injection lasers
116. Submillimeter photoconductivity of two-dimensional electron structures in Corbino geometry
117. Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface
118. Collective resonances and shape function for homogeneous broadening of the emission spectra of quantum-well semiconductor heterostructures
119. Influence of heating of the active region in InGaAsP/InP injection lasers on their spectral characteristics
120. Modelling Quantum Well Laser Diode Structures
121. Optical Switches and Modulators for Integrated Optoelectronic Systems
122. InGaAs/GaAs Quantum Dot Lasers
123. Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates
124. GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy
125. Spontaneous long-wavelength interlevel emission in quantum-dot laser structures
126. Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 µm
127. Lasing in submonolayer InAs/AlGaAs structures without external optical confinement
128. Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge
129. Electroluminescence of quantum-well structures on type-II InAs/GaSb heterojunctions
130. Structural characterization of self-organized nanostructures
131. Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region
132. Influence of the quality of the heterointerface on the cyclotron resonance spectra of InAs/(AlGa)Sb heterostructures
133. Quantum-dot lasers: Principal components of the threshold current density
134. Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure
135. Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C
136. Lasing in submonolayer CdSe structures in a ZnSe matrix without external optical confinement
137. Photoluminescence of InSb quantum dots in GaAs and GaSb matrices
138. Asymmetric Hybrid Al(Ga)SbAs/InAs/Cd(Mg)Se Heterostructures for Mid-IR LEDS and Lasers
139. Spin Polarization and Injection in ZnMnSe/ZnCdSe Heterostructures
140. Isotope-pure 28Si layers grown by VPE
141. Peculiarities of neutron-transmutation phosphorous doping of 30Si enriched SiC crystals: Electron paramagnetic resonance study.
142. Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm.
143. Aleksandr Aleksandrovich Rogachev
144. Quantum-dot injection heterolaser with 3.3 W output power
145. Recombination Processes in GaAs/AlGaAs Multi-Quantum Well Structures
146. Dynamics of localized excitons in a superlattice grown by molecular-beam epitaxy with submonolayers of CdSe
147. Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm
148. Room-temperature lasing in structures with CdSe quantum islands in a ZnMgSSe matrix without external optical confinement
149. Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W
150. Radiative versus non-radiative recombination in high-efficiency mid-IR InSb/InAs/In(Ga,Al)As/GaAs metamorphic nanoheterostructures
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