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657 results on '"López-López M"'

103. Mutational spectrum of EDA and EDAR genes in a cohort of Mexican mestizo patients with hypohidrotic ectodermal dysplasia

Author

Monroy-Jaramillo, N., primary, Abad-Flores, J.D., additional, García-Delgado, C., additional, Villaseñor-Domínguez, A., additional, Mena-Cedillos, C., additional, Toledo-Bahena, M.E., additional, Valencia-Herrera, A.M., additional, Sánchez-Boiso, A., additional, Akaki-Carreño, Y.I., additional, Del Río Navarro, B., additional, Aguirre-Hernández, J., additional, López-López, M., additional, Cervantes, A., additional, Cerbón, M., additional, and Morán-Barroso, V.F., additional

Published
2017
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105. Structural and optical study of indium and gallium arsenide nanostructures prepared by magnetron sputtering.

Author

Jaramillo, S. Torres, Pulzara-Mora, C., Bernal-Correa, R., de la Cerda, M. Venegas, Gallardo-Hernández, S., López-López, M., and Pulzara-Mora, A.

Subjects
INDIUM gallium arsenide, MAGNETRON sputtering, NANOSTRUCTURES, MASS spectrometry, RAMAN spectroscopy, X-ray diffraction
Abstract

Copyright of Universitas Scientiarum is the property of Pontificia Universidad Javeriana and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Published
2019
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106. A study of Franz–Keldysh oscillations of GaAs/Si/GaAs and AlAs/Si/AlAs heterostructures.

Author

Meléndez-Lira, M., Jiménez-Sandoval, S., López-López, M., Hernández-Calderón, I., Kawai, T., Pak, K., and Yonezu, H.

Subjects
OSCILLATIONS, MOLECULAR beams, MONOMOLECULAR films
Abstract

Presents a study of Franz-Keldysh oscillations observed in the photoreflectance spectra of molecular beam epitaxy grown GaAs/Si/GaAs and AlAs/Si/AlAs heterostructures with a silicon nominal thickness of two monolayers. Experimental details; Results and discussion; Conclusion.

Published
1994

107. Farmacogenética de reacciones adversas a fármacos antiepilépticos

Author

Fricke-Galindo, I., Jung-Cook, H., LLerena, A., and López-López, M.

Abstract

Las reacciones adversas a medicamentos (RAM) son un problema de salud pública y una importante causa de morbimortalidad a nivel mundial. En el caso de los fármacos antiepilépticos (FAE), la presencia de RAM puede ser un impedimento para lograr el éxito terapéutico al dificultar la adherencia al tratamiento e impactar la calidad de vida del paciente. La farmacogenética busca la identificación de variantes genéticas asociadas a la seguridad de los fármacos. En este artículo se revisan los genes que codifican para enzimas metabolizadoras y transportadores de fármacos, así como en el sistema HLA asociados a RAM inducidas por FAE.

Published
2024
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108. Polycristalline growth of zinc blende gallium arsenide layers by R.F. magnetron sputtering

Author

Bernal Correa, R., Jorge Iván Montes Monsalve, Pulzara Mora, A., López López, M., Cruz Orea, A., and Cardona, J. A.

Subjects
Condensed Matter::Materials Science, RF magnetron sputtering, Gallium arsenide, Raman microscopy, Física, Astronomía y Matemáticas
Abstract

"Zinc-blende GaAs layers were prepared on (100) Si and glass substrates by r.f. magnetron sputtering. The morphology of GaAs layers is analyzed by means of atomic force microscopy (AFM) and scanning electron microscopy (FE-SEM), to determine the sample topography and growth type. The compositional analysis was performed by means of energy dispersive X-ray spectroscopy (EDS), in order to obtain information of the atomic percentages of the elements and their spatial distribution in the samples. The optical properties of the layers are discussed from the results of UV-Vis absorption, and Photoacoustic spectroscopy (PAS). Finally, the Raman shift of the GaAs phonon modes are studied as function of the penetration depth of laser wavelength used to excite the sample on Raman microscopy."

Published
2014

119. Processing of Cu(In,Ga)Se2 Thin Film Solar Cells by Co-Evaporation Using a Physical Vapor Deposition System with Effusion Cells MBE Type*

Author

Calixto, M.E., Sastré-Hernández, J., Tufiño Velázquez, M., Contreras-Puente, G., López-López, M., Morales-Acevedo, A., and Casados-Cruz, G.

Subjects
Thin Film Solar Cells, CIS and Other (II-VI) Ternary Thin Film Solar Cells
Abstract

25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain; 3445-3447, Polycrystalline Cu(In,Ga)Se2 (CIGS) solar cells are attractive because low cost techniques can be used to obtain high efficiency thin film photovoltaic devices. Several research groups around the globe have developed CIGS/CdS solar cells with efficiencies larger than 15% using evaporation techniques, making it an attractive and reliable technique for thin film deposition. In this work, we are using a PVD system with Knudsen cells MBE type to deposit CIGS thin films on glass/Mo substrates by co-evaporation to obtain CIGS/CdS thin film solar cells. Characterization of co-evaporated CIGS thin films was performed by XRD, SEM and EDS techniques. High quality polycrystalline films were obtained as shown by XRD patterns. SEM micrographs show films having a very uniform appearance with large grain sizes (~1 μm). EDS analysis allowed us verifying that a Cu film could be successfully selenized and converted into Cu3Se2, a condition that is necessary to perform the co-evaporation of Cu-In-Ga-Se for obtaining CIGS films. Photoluminescence (PL) studies on CIGS samples with different Ga and Cu concentrations (Ga/Ga+In = 0.28, 0.34 and 0.35 and Cu/In+Ga = 0.85, 0.83 and 0.94) have been performed.

Published
2010
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120. Magnetorheological effect in the magnetic field oriented along the vorticity

Author

Kuzhir, P., Magnet, C., Rodríguez-Arco, L., López-López, M. T., Fezai, H., Meunier, A., Zubarev, A., Bossis, G., Kuzhir, P., Magnet, C., Rodríguez-Arco, L., López-López, M. T., Fezai, H., Meunier, A., Zubarev, A., and Bossis, G.

Abstract

In this work, we have studied the magnetorheological (MR) fluid rheology in the magnetic field parallel to the fluid vorticity. Experimentally, the MR fluid flow was realized in the Couette coaxial cylinder geometry with the magnetic field parallel to the symmetry axis. The rheological measurements were compared to those obtained in the cone-plate geometry with the magnetic field perpendicular to the lower rheometer plate. Experiments revealed a quasi-Bingham behavior in both geometries with the stress level being just a few dozens of percent smaller in the Couette cylindrical geometry at the same internal magnetic field. The unexpectedly high MR response in the magnetic field parallel to the fluid vorticity is explained by stochastic fluctuations of positions and orientations of the particle aggregates. These fluctuations are induced by magnetic interactions between them. Once misaligned from the vorticity direction, the aggregates generate a high stress independent of the shear rate, and thus assimilated to the suspension apparent (dynamic) yield stress. Quantitatively, the fluctuations of the aggregate orientation are modeled as a rotary diffusion process with a diffusion constant proportional to the mean square interaction torque. The model gives a satisfactory agreement with the experimental field dependency of the apparent yield stress and confirms the nearly quadratic concentration dependency σYΦ2.2, revealed in experiments. The practical interest of this study lies in the development of MR smart devices with the magnetic field nonperpendicular to the channel walls. © 2014 The Society of Rheology.

Published
2014

121. Inverse magnetorheological fluids

Author

Rodríguez-Arco, L., López-López, M. T., Zubarev, A. Y., Gdula, K., Durán, J. D. G., Rodríguez-Arco, L., López-López, M. T., Zubarev, A. Y., Gdula, K., and Durán, J. D. G.

Abstract

We report a new kind of field-responsive fluid consisting of suspensions of diamagnetic (DM) and ferromagnetic (FM) microparticles in ferrofluids. We designate them as inverse magnetorheological (IMR) fluids for analogy with inverse ferrofluids (IFFs). Observations on the particle self-assembly in IMR fluids upon magnetic field application showed that DM and FM microparticles were assembled into alternating chains oriented along the field direction. We explain such assembly on the basis of the dipolar interaction energy between particles. We also present results on the rheological properties of IMR fluids and, for comparison, those of IFFs and bidispersed magnetorheological (MR) fluids. Interestingly, we found that upon magnetic field application, the rheological properties of IMR fluids were enhanced with respect to bidispersed MR fluids with the same FM particle concentration, by an amount greater than the sum of the isolated contribution of DM particles. Furthermore, the field-induced yield stress was moderately increased when up to 30% of the total FM particle content was replaced with DM particles. Beyond this point, the dependence of the yield stress on the DM content was non-monotonic, as expected for FM concentrations decreasing to zero. We explain these synergistic results by two separate phenomena: the formation of exclusion areas for FM particles due to the perturbation of the magnetic field by DM particles and the dipole-dipole interaction between DM and FM particles, which enhances the field-induced structures. Based on the second phenomenon, we present a theoretical model for the yield stress that semi-quantitatively predicts the experimental results. This journal is © the Partner Organisations 2014.

Published
2014

122. On the theory of magnetoviscous effect in magnetorheological suspensions

Author

Zubarev, A., Iskakova, L., López-López, M. T., Kuzhir, P., Bossis, G., Zubarev, A., Iskakova, L., López-López, M. T., Kuzhir, P., and Bossis, G.

Abstract

A theoretical model of magnetoviscous effect in a suspension of nonBrownian linearly magnetizable particles is suggested. A simple shear flow in the presence of an external magnetic field aligned with the velocity gradient is considered. Under the action of the applied field, the particles are supposed to form dense highly elongated droplike aggregates. Two different scenarios of the aggregates' destruction under shearing forces are considered, namely, a "bulk" destruction of aggregates into pieces and an "erosive" destruction connected to the rupture of individual particles from the aggregate surface. Both models are based on a balance of forces acting either on the whole aggregate or on individual particles. The two approaches lead to qualitatively different Mason number (Ma) behaviors of the magnetic suspensions: The suspension viscosity scales as either Ma-2/3for the bulk destruction of aggregates or Ma-4/5for the erosive destruction. In any case, we do not recover Bingham behavior (Ma-1) often predicted by chain models of the magneto- or electrorheology. Our theoretical results are discussed in view of comparison with existing theories and experimental results in the wide range of Mason numbers. © 2014 The Society of Rheology.

Published
2014

123. Photoreflectance study of the GaAs buffer layer in InAs/GaAs quantum dots.

Author

Sánchez-Trujillo, D. J., Prías-Barragán, J. J., Ariza-Calderón, H., Pulzara-Mora, A. O., and López-López, M.

Subjects
PHOTOREFLECTANCE, GALLIUM arsenide transistors, QUANTUM dots
Abstract

GaAs buffer layer in InAs/GaAs quantum dots (QDs) was investigated by Photoreflectance (PR) technique at 300 K. PR spectra obtained were compared with commercial GaAs sample PR spectra, and they were analyzed by using the derivative Lorentzian functions as proposed by Aspnes in the middle field regimen. PR spectra in InAs/GaAs QDs sample was attributed to the photoreflectance response in the GaAs buffer layer. Band bending energies were calculated for laser intensities from 1 mW to 21 mW. The photoreflectance comparative study in the samples was realized considering the difference in the parameters: electric field on the surface, broadening parameter, energy gained by photoexcited carriers due to the electric field applied, frequency of light and heavy holes and band bending energy values. The results suggest that the presence of InAs quantum dots increases the light and heavy holes frequencies and the band bending energy values; and decreases the electric field on the surface, the broadening parameter and the energy gained by photoexcited carriers. We found that InAs QDs presence modifies the surface electrical field around one order of magnitude in the GaAs buffer layer and this behavior can be attributed to surface passivation. [ABSTRACT FROM AUTHOR]

Published
2017
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124. EFECTO DEL SISTEMA DE PRODUCCIÓN DE Pinus greggii Engelm. var. australis EN VIVERO SOBRE SU DESARROLLO MORFOFISIOLÓGICO EN CAMPO.

Author

Sánchez-Vásquez, O., Cetina-Alcalá, V. M., López-López, M. A., and Trejo-Téllez, L. I.

Abstract

Copyright of Agro Productividad is the property of Colegio de Postgraduados and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Published
2017

130. Microdynamics of Magnetic Particles Dispersed in Complex Media

Author

Bossis, G., López-López, M. T., Zubarev, A., Bossis, G., López-López, M. T., and Zubarev, A.

Abstract

The aggregation of magnetic particles in the presence of a magnetic field is the basic phenomenon which underlies all the physics of magnetorheological (MR) fluids. Although these interactions are well understood when the suspending fluid is a simple liquid, new MR fluids based on dispersion of magnetic microparticles in a ferrofluid or MR elastomers based on dispersion of magnetic particles in a rubber matrix, present some unusual properties which are not well described by conventional theories. We analyze in this work the motion of magnetic particles dispersed in a ferrofluid and submitted to a magnetic field and discuss the possible applications.

Published
2011

137. Caracterización de capas de GaAs y GaAsMn depositadas por magnetrón sputtering.

Author

Pulzara-Mora, C. A., Doria-Andrade, J., Pulzara-Mora, A., Bernal-Correa, R., Rosales-Rivera, A., and López-López, M.

Abstract

Copyright of Superficies y Vacío is the property of Sociedad Mexicana de Ciencia y Tecnologia de Superficies y Materiales and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Published
2016

138. Structural, optical and morphological properties of InxGa1-xAs layers obtained by RF magnetron sputtering.

Author

Pulzara-Mora, A., Montes-Monsalve, J., Bernal-Correa, R., Morales-Acevedo, A., Gallardo-Hernández, S., and López-López, M.

Subjects
STRUCTURAL analysis (Engineering), OPTICAL properties, CRYSTAL morphology, MAGNETRON sputtering, RADIO frequency, INDIUM, GALLIUM, ARSENIDES
Abstract

Indium gallium arsenide layers (InxGa1-xAs) were prepared on Silicon (100) and glass substrates in an argon atmosphere by R.F. magnetron sputtering. The growth temperature was 580 °C and high purity targets of gallium arsenide and indium were used. The effects due to the RF power for the In sputtering and the substrate type on the deposited films were studied by Xray diffraction and Raman microscopy. These studies revealed the formation of InxGa1-xAs with the zinc-blende phase. The results also show that at low In sputtering RF power, there is a preferential growth along of (111) direction. Morphology and thickness of the layers were studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM), revealing a variation of particle size and roughness. Energy dispersive spectroscopy (EDS) allowed us to determine the atomic percentages of In, Ga, and As. These results are in agreement with Raman measurements, where GaAs-like and InAs-like LO and TO vibrational modes were observed with a shift attributed to the indium concentrations in the InxGa1- xAs layers. By secondary ion mass spectroscopy (SIMS), the interface quality was studied. [ABSTRACT FROM AUTHOR]

Published
2016

142. Group III-nitrides nanostructures

Author

Pérez-Caro, M., primary, Ramírez-López, M., additional, Rojas-Ramírez, J. S., additional, Martínez-Velis, I., additional, Casallas-Moreno, Y., additional, Gallardo-Hernández, S., additional, Babu, B. J., additional, Velumani, S., additional, López-López, M., additional, Conde-Gallardo, Agustín, additional, Ayón-Beato, Eloy, additional, Godina-Nava, Juan José, additional, Hernández-Contreras, Martín, additional, and Velasco-Sevilla, Liliana, additional

Published
2012
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