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The calculations which determine the chemical composition of the primitive magma are simple but they show changes in the temperature and pressure states of the magma source. The method is based on the addition of the chemical composition of the Olivine to the major element composition of the eruptive rocks which follows the formula: Ci = Ci-1+ 0.1 * Ci-1Ol. In accordance with the characteristics of the study area, we have made new additions to the calculation method. The calculation results are highly accurate when tested and compared with the chemical composition of the eruptive rocks. The chemical composition of the primitive magma solution is used to calculate the temperature and pressure states in the magma source. The results show that there is a difference in temperature and pressure in the source at different tectonic positions in the study area. Accordingly, the South Central coast region and the adjacent continental shelf are divided into two main types of eruptions. The first type of volcanic eruptions occurs at locations where major faults intersect and they are located north of the study area. The second type of volcanic eruptions in the form of a single volcano is located to the south of the study area and the southeastern continental shelf, and occurs in intracontinental extension structure.

The article mentions the results of the new analysis of gas-geochemical and high resolution shallow seismic data acquired by the sea surveys in 2016, which revealed a remarkable coincidence between the seabed gas anomalies at river mouth area of Gulf of Tonkin and the gas distortion/accumulation phenomena in the near-surface sediment layers, especially right above the large tectonic fault systems, such as Red river, Lo river and Chay river. The gas-geochemical analysis reveals the existences of thermogenic and metamorphic methane and carbon dioxide gases within the faults of Red river and on Cat Ba island, anomalies of helium and hydrogen as well as the “heavy” isotopic carbon signals of methane and carbon dioxide in the areas of near-surface active faults. These new results suggest the initial conclusions about the relationship between gas-geochemical field and tectonic fault activities in study area.

The evolution of information technology has been driven by the discovery of new forms of large magnetoresistance, such as giant magnetoresistance1,2 and tunnelling magnetoresistance3,4, in magnetic multilayers. Recently, new types of this effect have been observed in much simpler bilayers consisting of ferromagnetic and non-magnetic thin films5–10. However, the magnitude of the change in resistance with magnetic field in these materials is very small, varying between 0.01 and 1%. Here, we demonstrate that non-magnetic–ferromagnetic bilayers consisting of a conducting non-magnetic InAs quantum well and an insulating ferromagnetic (Ga,Fe)Sb layer exhibit giant proximity magnetoresistance of approximately 80% at high magnetic field, and that its magnitude can be controlled by a gate. The mechanism for this large magnetoresistance is a strong magnetic proximity effect. The spin splitting in the InAs quantum well induced by the magnetic proximity effect can be varied between 0.17 meV and 3.8 meV by varying the gate voltage. In principle, this provides a mechanism to locally access Majorana fermions in InAs-based Josephson junctions11–14 and introduces a new concept of magnetic-gating spin transistors in which the non-magnetic channel current is modulated by both electrical and magnetic means. The authors demonstrate magnetoresistance of 80% from a two-dimensional electron gas proximity coupled to a ferromagnetic layer. This extends spintronics functionality to semiconductor devices.

The PEG-coated iron oxide nanoparticles (Fe3O4 NPs-PEG) was synthesized by coprecipitation and ultrasonication method. X-ray diffraction results exhibited that the average size of Fe3O4 NPs-PEG was 19.10 nm, which was further confirmed in TEM imaging. In addition, sonication time and curcumin concentration were studied to evaluate the efficiency of loading curcumin onto Fe3O4 NPs-PEG. Further, statistical optimization using response surface methodology (RSM) has shown curcumin concentration (0,01% w/v) and sonication time (21 min) for maximal curcumin loading (0.37 mg/g). Along with the magnetization studies, the immobilization of curcumin onto the Fe3O4 NPs-PEG was characterized by UV, FTIR and SEM. The results showed that the curcumin loaded PEG coated iron oxide nanoparticles could potentially be used for magnetically target drug delivery.

Crack detection is a critical task in monitoring and inspection of civil engineering structures. Image classification and bounding box approaches have been proposed in existing vision-based automated concrete crack detection methods using deep convolutional neural networks. The current study proposes a crack detection method based on deep fully convolutional network (FCN) for semantic segmentation on concrete crack images. Performance of three different pre-trained network architectures, which serves as the FCN encoder's backbone, is evaluated for image classification on a public concrete crack dataset of 40,000 227 × 227 pixel images. Subsequently, the whole encoder-decoder FCN network with the VGG16-based encoder is trained end-to-end on a subset of 500 annotated 227 × 227-pixel crack-labeled images for semantic segmentation. The FCN network achieves about 90% in average precision. Images extracted from a video of a cyclic loading test on a concrete specimen are used to validate the proposed method for concrete crack detection. It was found that cracks are reasonably detected and crack density is also accurately evaluated.

This paper reports the results of the third Russian–Vietnamese expedition (V.I. Il'ichev Pacific Oceanological Institute, Far East Branch, Russian Academy of Sciences and the Institute of Marine Geology and Geophysics, Vietnam Academy of Science and Technology) in the Gulf of Tonkin, South China Sea (April 2016). The studies revealed new specific features of the distribution and origin of gasgeochemical fields in sediments within the rift zone of the Red River along a 150-km profile. Four zones with high-amplitude anomalies of hydrocarbon gases, helium, hydrogen, carbon dioxide, and carbon monoxide were revealed. The distribution of the anomalies reflects the tectonic structure of the area and points to the presence of several lithospheric sources of gases including gases of deep origin. The studies were carried out within the scope of the Joint Vietnamese–Russian Laboratory for Marine Geoscience (V.I. Il'ichev Pacific Oceanological Institute, Far East Branch, Russian Academy of Sciences and the Institute of Marine Geology and Geophysics, Vietnam Academy of Science and Technology).

Electronics based on perovskite oxides, a class of materials with unparalleled wealth of physical functionalities, possesses high potential to go beyond the present semiconductor-based technologies. Towards universal and scalable oxide-based electronics, an important milestone is to realise both N- and P-type conduction regions – the two fundamental blocks of most of electronic devices – on the same oxide substrate surface. However, in contrast to the case of conventional semiconductors, the formation of planar PN junctions is highly challenging in oxide materials owing to difficulties in carrier doping. Here, we show that high-mobility PN junctions can be formed on a surface of SrTiO3 (STO), one of the most versatile oxide materials, in a robust and low-cost manner by simply depositing Angstrom-thin metal layers on top of an STO substrate near room temperature. Furthermore, by forming planar N-P-N junctions, we successfully demonstrate a new type of oxide-based tunnelling field effect transistor (TFET), which enables an extremely sharp switching with a subthreshold swing value S ~ 38 mV/dec and a large current ON/OFF ratio of 108. This high-performance FET operation is obtained by a new mechanism where a gate voltage strongly modulates the tunnelling probability through the depletion layers at the PN interfaces, utilising the unique strong nonlinear electric-field dependence of the permittivity of STO. Our simple method for selectively forming P and N-type regions monolithically on STO is potentially applicable to a wide range of oxide-based electronic systems, from single devices to integrated circuits, and even to flexible electronics.

The two-dimensional electron gas formed at interfaces between SrTiO$_3$ and other materials has attracted much attention since extremely efficient spin-to-charge current conversion has been recently observed at these interfaces. This has been attributed to their complicated quantized multi-orbital structures with a topological feature. However, there are few reports quantitatively comparing the conversion efficiency values between experiments and theoretical calculations at these interfaces. In this study, we theoretically explain the experimental temperature dependence of the spin-to-charge current conversion efficiency using an 8x8 effective tight-binding model considering the second $d_{xy}$ subband, revealing the vital role of the quantization of the multi-band structure., Comment: 15 pages, 5 fugures

Fe-doped III-V ferromagnetic semiconductors (FMSs) such as (In,Fe)As, (Ga,Fe)Sb, (In,Fe)Sb, and (Al,Fe)Sb are promising materials for spintronic device applications because of the availability of both n- and p-type materials and the high Curie temperatures. On the other hand, (Ga,Fe)As, which has the same zinc-blende crystal structure as the Fe-doped III-V FMSs, shows paramagnetism. The origin of the different magnetic properties in the Fe-doped III-V semiconductors remains to be elucidated. To address this issue, we use resonant photoemission spectroscopy (RPES) and x-ray magnetic circular dichroism (XMCD) to investigate the electronic and magnetic properties of the Fe ions in a paramagnetic (Ga$_{0.95}$,Fe$_{0.05}$)As thin film. The observed Fe 2$p$-3$d$ RPES spectra show that the Fe 3$d$ states are similar to those of ferromagnetic (Ga,Fe)Sb. The estimated Fermi level is located in the middle of the band gap in (Ga,Fe)As. The Fe $L_{2,3}$ XMCD spectra of (Ga$_{0.95}$,Fe$_{0.05}$)As show pre-edge structures, which are not observed in the Fe-doped FMSs, indicating that the minority-spin ($\downarrow$) $e_\downarrow$ states are vacant in (Ga$_{0.95}$,Fe$_{0.05}$)As. The XMCD results suggest that the carrier-induced ferromagnetic interaction in (Ga$_{0.95}$,Fe$_{0.05}$)As is short-ranged and weaker than that in the Fe-doped FMSs. The experimental findings suggest that the electron occupancy of the $e_\downarrow$ states contributes to the appearance of ferromagnetism in the Fe-doped III-V semiconductors, for p-type as well as n-type compounds.

This thesis investigates the association between education and person's labour market status in African countries, with specific focus on Ethiopia, Nigeria, and Sierra Leone. Data from the most recent household surveys conducted by respec- tive countries' statistical agencies are applied to this research. The analysis was further broken down by sex to examine, whether similar results could be derived for male and female population. This was achieved by carrying out the series of gender-specific logit models. The findings of this thesis suggest that more edu- cated people are more likely to engage in formal employment and less likely to engage in subsistence farming, regardless of gender or country. However, no clear association was found between education and unemployment. Furthermore, the returns to male's education were at least as significant as female's returns, if not larger, in terms of formal employment incidence. Keywords education, formal employment, gender disparity, subsistence farming, logit

Fully understanding the properties of n-type ferromagnetic semiconductors (FMSs), complementary to the mainstream p-type ones, is a challenging goal in semiconductor spintronics because ferromagnetism in n-type FMSs is theoretically non-trivial. Soft-x-ray angle-resolved photoemission spectroscopy (SX-ARPES) is a powerful approach to examine the mechanism of carrier-induced ferromagnetism in FMSs. Here our SX-ARPES study on the prototypical n-type FMS (In,Fe)As reveals the entire band structure including the Fe-3d impurity bands (IBs) and the host InAs ones, and provides direct evidence for electron occupation of the InAs-derived conduction band (CB). A minority-spin Fe-3d IB is found to be located just below the conduction-band minimum (CBM). The IB is formed by the hybridization of the unoccupied Fe-3d states with the occupied CBM of InAs in a spin-dependent way, resulting in the large spin polarization of CB. The band structure with the IB is varied with band filling, which cannot be explained by the rigid-band picture, suggesting a unified picture for realization of carrier-induced ferromagnetism in FMS materials., 24 pages, 7 figures

Realizing efficient spin-charge conversion is an important issue in spin-based electronics, especially for the development of low-power-consumption magnetization switching. A spin-charge conversion is generally induced in a nonmagnetic (NM) layer by the inverse spin Hall effect in the bulk or by the inverse Rashba-Edelstein effect at surfaces or interfaces. In the bulk, the spin-charge conversion efficiency is called the spin Hall angle, ${\ensuremath{\theta}}_{\mathrm{SHE}}$, and it is limited by the spin-orbit interaction of the bulk layer. Thus, artificially enhancing ${\ensuremath{\theta}}_{\mathrm{SHE}}$ to greater than its intrinsic value is difficult. Here, using spin-pumping measurements on a well-controlled interface between a ferromagnetic (FM) ${\mathrm{Co}}_{2}{\mathrm{Fe}\mathrm{Al}}_{0.5}{\mathrm{Si}}_{0.5}$ (CFAS) layer and a NM n-type $\mathrm{Ge}$ layer, we demonstrate that ${\ensuremath{\theta}}_{\mathrm{SHE}}$ can be strongly enhanced by annealing the sample and the resulting interdiffusion of atoms within only about 3.7 nm around the CFAS/n-$\mathrm{Ge}$ interface. Because of this annealing process, ${\ensuremath{\theta}}_{\mathrm{SHE}}$ is increased from 0.0058--0.0079 to 0.015--0.019, which is much larger than the intrinsic value of ${\ensuremath{\theta}}_{\mathrm{SHE}}$ reported for $\mathrm{Ge}$ (0.00096--0.002) and is comparable to ${\ensuremath{\theta}}_{\mathrm{SHE}}$ values reported for $\mathrm{Pt}$. This enhancement is attributed to strong scattering of the spin current in the intermixed layer formed at the interface by annealing. Our results indicate that ${\ensuremath{\theta}}_{\mathrm{SHE}}$ is strongly influenced by the atomic structure of the FM/NM interface, which suggests an efficient method to control spin-charge conversion by precise control of the FM/NM interface.

Material structures containing tetrahedral FeAs bonds, depending on their density and geometrical distribution, can host several competing quantum ground states ranging from superconductivity to ferromagnetism. Here we examine structures of quasi two-dimensional (2D) layers of tetrahedral Fe-As bonds embedded with a regular interval in a semiconductor InAs matrix, which resembles the crystal structure of Fe-based superconductors. Contrary to the case of Fe-based pnictides, these FeAs/InAs superlattices (SLs) exhibit ferromagnetism, whose Curie temperature (TC) increases rapidly with decreasing the InAs interval thickness tInAs (TC ∝ tInAs−3), and an extremely large magnetoresistance up to 500% that is tunable by a gate voltage. Our first principles calculations reveal the important role of disordered positions of Fe atoms in the establishment of ferromagnetism in these quasi-2D FeAs-based SLs. These unique features mark the FeAs/InAs SLs as promising structures for spintronic applications., In this manuscript, the authors grow very thin layers of FeAs in a matrix of InAs. The resulting superlattice displays ferromagnetism, with the Curie temperature varying depending on the layer thickness. These results further illustrate the wide array of intriguing ground states of materials with tetrahedral FeAs bonds

(Ga,Fe)Sb is a promising ferromagnetic semiconductor for practical spintronic device applications because its Curie temperature $({T}_{\mathrm{C}})$ is above room temperature. However, the origin of ferromagnetism with high ${T}_{\mathrm{C}}$ remains to be elucidated. Here, we use soft x-ray angle-resolved photoemission spectroscopy (SX-ARPES) to investigate the valence-band (VB) structure of $(\mathrm{G}{\mathrm{a}}_{0.95},\mathrm{F}{\mathrm{e}}_{0.05})\mathrm{Sb}$ including the $\mathrm{Fe}\text{\ensuremath{-}}3d$ impurity band (IB), to unveil the mechanism of ferromagnetism in (Ga,Fe)Sb. We find that the VB dispersion in $(\mathrm{G}{\mathrm{a}}_{0.95},\mathrm{F}{\mathrm{e}}_{0.05})\mathrm{Sb}$ observed by SX-ARPES is similar to that of GaSb, indicating that the doped Fe atoms hardly affect the band dispersion. The $\mathrm{Fe}\text{\ensuremath{-}}3d$ resonant ARPES spectra demonstrate that the $\mathrm{Fe}\text{\ensuremath{-}}3d$ IB crosses the Fermi level $({E}_{\mathrm{F}})$ and hybridizes with the VB of GaSb. These observations indicate that the VB structure of $(\mathrm{G}{\mathrm{a}}_{0.95},\mathrm{F}{\mathrm{e}}_{0.05})\mathrm{Sb}$ is consistent with that of the IB model which is based on double-exchange interaction between the localized $3d$ electrons of the magnetic impurities.

International audience; We have synthesized 50 benzimidazole (BMZ) derivatives with 1,2-phenylenediamines and aromatic aldehydes under mild oxidation conditions by using inexpensive, nontoxic inorganic salt sodium metabisulfite in a one-pot condensation reaction and screened their ability to interfere with Zika virus (ZIKV) infection utilizing a cell-based phenotypic assay. Seven BMZs inhibited an African ZIKV strain with a selectivity index (SI=CC50 /EC50 ) of 9-37. Structure-activity relationship analysis demonstrated that substitution at the C-2, N-1, and C-5 positions of the BMZ ring were important for anti-ZIKV activity. The hybrid structure of BMZ and naphthalene rings was a structural feature responsible for the high anti-ZIKV activity. Importantly, BMZs inhibited ZIKV in human neural stem cells, a physiologically relevant system considering the severe congenital anomalies, like microcephaly, caused by ZIKV infection. Compound 39 displayed the highest antiviral efficacy against the African ZIKV strain in Huh-7 (SI>37) and neural stem cells (SI=12). Compound 35 possessed the highest activity in Vero cells (SI=115). Together, our data indicate that BMZs derivatives have to be considered for the development of ZIKV therapeutic interventions.

This paper demonstrates intrinsic spin-to-charge current conversion in a two-dimensional electron gas using an all-epitaxial single-crystal heterostructure of LaSrMnO${}_{3}$/ LaAlO${}_{3}$ (LAO)/ SrTiO${}_{3}$ (STO), known to suppress spin scattering. As temperature decreases to 20 K, the spin-to-charge conversion efficiency is enhanced. The authors complement their experiments with band-structure calculation that agree with the observations and predict further enhancement by controlling the density and relaxation time of the carriers.

We demonstrate spin-valve magnetoresistance with a current-in-plane (CIP) configuration in (Ga,Fe)Sb / InAs (thickness $t_\mathrm{InAs}$ nm) / (Ga,Fe)Sb trilayer heterostructures, where (Ga,Fe)Sb is a ferromagnetic semiconductor (FMS) with high Curie temperature ($T_\mathrm{C}$). An MR curve with an open minor loop is clearly observed at 3.7 K in a sample with $t_\mathrm{InAs}$ = 3 nm, which originates from the parallel - antiparallel magnetization switching of the (Ga,Fe)Sb layers and spin-dependent scattering at the (Ga,Fe)Sb / InAs interfaces. The MR ratio increases (from 0.03 to 1.6%) with decreasing $t_\mathrm{InAs}$ (from 9 to 3 nm) due to the enhancement of the interface scattering. This is the first demonstration of the spin-valve effect in Fe-doped FMS heterostructures, paving the way for device applications of these high- $T_\mathrm{C}$ FMSs., Comment: 15 pages, 7 figures

Fundamental understanding of interfacial magnetic properties in ferromagnetic heterostructures is essential to utilize ferromagnetic materials for spintronic device applications. In this paper, we investigate the interfacial magnetic and electronic structures of epitaxial single-crystalline LaAlO$_3$ (LAO)/La$_{0.6}$Sr$_{0.4}$MnO$_3$ (LSMO)/Nb:SrTiO$_3$ (Nb:STO) heterostructures with varying LSMO-layer thickness, in which the magnetic anisotropy strongly changes depending on the LSMO thickness due to the delicate balance between the strains originating from both the Nb:STO and LAO layers, using x-ray magnetic circular dichroism (XMCD) and photoemission spectroscopy (PES). We successfully detect the clear change of the magnetic behavior of the Mn ions concomitant with the thickness-dependent metal-insulator transition (MIT). Our results suggest that double-exchange interaction induces the ferromagnetism in the metallic LSMO film under tensile strain caused by the SrTiO$_3$ substrate, while superexchange interaction determines the magnetic behavior in the insulating LSMO film under compressive strain originating from the top LAO layer. Based on those findings, the formation of a magnetic dead layer near the LAO/LSMO interface is attributed to competition between the superexchange interaction via Mn 3$d_{3z^2-r^2}$ orbitals under compressive strain and the double-exchange interaction via the 3$d_{x^2-y^2}$ orbitals., Comment: 20 pages, 6 figures

The East Vietnam Sea is one of the largest marginal basins in western Pacific Ocenan, formed by breaking of continental margin in the Late Mesozoic. Geochemical data of the Miocene - Pleistocene bazanic samples collected in the East Sea and neighboring areas show two major eruption trends that reflect the formation and development of the region. The early eruption event is characterized by low alkaline, TiO2, Na2O, K2O and P2O5, and high SiO2 group, comprising olivine and tholeiitic bazans. The later eruption demonstrates high alkaline, TiO2, Na2O, K2O and P2O5, and low SiO2 group, mainly generated by central-type volcanic eruptions, consisting of alkaline olivine and olivine bazans. Distinctive geochemistry of the volcanic rocks within the East Vietnam Sea and adjacent areas is illustrated by wide range of Magnesium index (Mg#= 35-75). At the values of Mg#>65, the relation between Mg# and major oxides is unclear. In contrast, Mg#65 (Olivine differentiation) the isotope ratios start changing. The primitive components are computed based on the principle of olivine compensation. The computed results show that the critical pressure for Tholeiite melting was estimated from ~11.97-20.33 Kb (ca. 30 - 60 km deep) and the Alkaline melting pressure varies from ~16.87-34.93 Kb (corresponding to the depths of ~60 km to 100 km). The continuous range of melting pressures suggests two trends of tholeiitic and alkaline eruptions occurr at various depths in the same magmatic source. Hight temperature and melting pressure of the primitive magma are dependent on partial melting pressure. Possibly, this process was triggered by the asthenosphere intrusion resulted from the closure of the Neo-Tethys following the India - Eurasia collision. This event has not only made the mantle hotter and easily melted but also triggered the opening of the marginal seas, including the East Vietnam Sea.

The maximum horizontal gradient method was first proposed by Blakely and Simpson (1986) for determining the boundaries between geological bodies with different densities. The method involves the comparison of a center point with its eight nearest neighbors in four directions within each 3 × 3 calculation grid. The horizontal location and magnitude of the maximum values are found by interpolating a second-order polynomial through the trio of points provided that the magnitude of the middle point is greater than its two nearest neighbors in one direction. In theoretical models of multiple sources, however, the above condition does not allow the maximum horizontal locations to be fully located, and it could be difficult to correlate the edges of complicated sources. In this paper, the authors propose an additional condition to identify more maximum horizontal locations within the calculation grid. This additional condition will improve the method algorithm for interpreting the boundaries of magnetic and/or gravity sources. The improved algorithm was tested on gravity models and applied to gravity data for the Phu Khanh basin on the continental shelf of the East Vietnam Sea. The results show that the additional locations of the maximum horizontal gradient could be helpful for connecting the edges of complicated source bodies.

A 2D polycrystalline permalloy domain wall trap nanostructure with a thickness of 20 nm was studied. The structure was alternatively designed and patterned using QCAD/L-Edit software and focused-ion beam technique. With this design, a magnetic domain wall can be created and propagated with a sequence of two-field directions in a Lorentz microscopy. The trap consists of two horizontal nanowires and three 90°-tilted ones. Each nanowire has an in-plane dimension of 200 × 1000 nm 2 . The trap corners were curved to allow a created domain wall that easily moves through the structure. A head-to-head domain-wall aims to create using a continuous field, this created wall can be propagated in the trap using a sequence of two-field directions. The designed trap was simulated using the Object Oriented Micro-Magnetic Framework software. Lorentz microscopy and simulation results indicate that the propagation of a domain wall is strongly affected by the precise roughness behavior of the trap elements. Domain wall pinning and transformation of wall chirality are sensitively correlated to the corner sections of the trap structure and field directions at a certain regime. Using the two-field direction method enables us to explore characteristics of the corner sections of the patterned trap nanostructure. This study is vital to fabricate an optimal nano-trap which supports a reproducible domain wall motion. This also suggests a useful method for the domain wall propagation using sequences of two-field directions. This work provides a better understanding of wall creation and propagation in polycrystalline permalloy curved nanowires which are of interest for concepts of nonvolatile data storage devices.

Studies of ductile dislocations of the Jurassic terrigenous deposits and faulting kinematics of the Cretaceous injective structures in the Dalat zone show that the volcano-plutonic belt of southeastern Vietnam was formed under NE-striking sinistral dislocations affected by NNW transpression. This deformation took place in similar conditions as for the Cretaceous structure of the eastern margin of Asia. Due to the Indo-Eurasian collision, since the Cenozoic the Indo-Sinian Block has been displaced toward the southeast by a distance of more than 500 km from its primary position, causing transformation of the previously formed Cretaceous structures. Thus, the Cenozoic tectonogenesis in southeastern Vietnam should be studied with regard to the previous Cretaceous tectonic deformation.

Reducing the power consumption necessary for magnetization reversal is one of the most crucial issues facing spintronics devices. Electric field control of the magnetic anisotropy of ferromagnetic thin films is a promising method to solve this problem. However, the electric field is believed to be effective only within several nanometres of the surface in ferromagnetic metals because of its short Thomas-Fermi screening length, which prevents its practical application to devices. Herein, we successfully modulate the magnetic anisotropy of the entire region of the ferromagnetic layers in the elongated mesas of vertical spin field-effect transistors with widths as large as ~500 nm by applying an electric field to the side surface of the metallic GaMnAs-based mesas through an electric double layer. Our results will open up a new pathway for spintronics devices with ultra-low power consumption.

Onshore Vietnam contains a complex series of faults coupled with a diffuse igneous province that has been active since the mid-Miocene. However, there are several conflicting fault maps in the literature and no consensus concerning the relative age of mapped faults and Neogene basalt flows, which becomes problematic when trying to use structural data to distinguish between competing tectonic models for the SE Asia region. This paper aims to define the Neogene-Recent tectonic setting and kinematics of the Da Lat block of the onshore Vietnam region, by analyzing the orientation, kinematics and ages of faults across a sub-region of the block. Fault ages can be constrained by the cross-cutting relationships with dated basalt flows. Results from remote sensing show a strong NE-SW fault trend for southern Vietnam, with additional, minor N-S, E-W and NW-SE trends. Fault orientations observed in the field fall into this NE-SW trending class, and are sub-vertical. In the basalt flows (with eruption ages < 5 Ma) these faults have oblique lineations with a strong strike-slip component. In Jurassic sediments, these faults show two sets of lineations: an older, dip-slip set, and a younger, oblique-slip set. We postulate that Jurassic-age dip-slip faults have been reactivated as strike-slip faults post 5 Ma. Strike-slip motion on NE-SW oriented faults is consistent with rotation and extrusion of the Kontum and Da Lat blocks. Rotation of the blocks is consistent with continuum rubble behavior of small crustal blocks under the influence of extrusion-driven asthenospheric flow.

Strontium titanate (SrTiO