101. Diode End-Pumped Passively Q-Switched Nd 3+ :GdVO 4 Self-Raman Laser at 1176 nm
- Author
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Miao Jie-guang, Hao Er-juan, Wang Baoshan, Li Yi-Min, Gao Lan-lan, Tan Hui-ming, Zhang Zhe, and Peng Ji-Ying
- Subjects
Materials science ,business.industry ,Slope efficiency ,General Physics and Astronomy ,Saturable absorption ,Laser ,Photon upconversion ,Ion ,law.invention ,symbols.namesake ,Optics ,Raman laser ,law ,symbols ,Optoelectronics ,business ,Raman scattering ,Diode - Abstract
A compact diode-end-pumped passively Q-switched Nd3+:GdVO4/Cr4+:YAG self-Raman laser at 1176?nm is demonstrated. When the T0 = 80% Cr4+:YAG saturable absorber is inserted into the cavity, the maximum Raman laser output reaches 175?mW with 3.8?W incident pump power. The optical conversion from incident to the Raman laser is 4.6% and the slope efficiency is 6.5%. The pulse energy, duration, and repetition frequency of the first stokes laser are 4.5??J, 1.8?ns, and 38.5?kHz, respectively. There is strong blue emission (about 350?400?nm) can be observed in the Nd3+:GdVO4 crystal when the process of stimulated Raman scattering occurs, which is induced by the upconversion of the Nd3+ ions.
- Published
- 2007