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Abstract The infertile electromagnetic (EM) attenuating behavior of carbon material makes the improvement of its performance remain a significant challenge. Herein, a facile and low‐cost strategy radically distinct from the prevalent approaches by constructing polar covalent bonds between sp2‐hybridized and sp3‐hybridized carbon atoms to introduce strong dipolar polarization is proposed. Through customizing and selectively engineering the N moieties conjugated with carbon rings, the microstructure of the as‐synthesized 2D nanosheet is gradually converted with the partial transition from sp3 carbons to sp2 carbons, where the electric dipoles between them are also tuned. Supported by the DFT calculations, a progressively enhanced sp2─sp3 C─C dipolar polarization is caused by this controllable structure evolution, which is demonstrated to contribute dominantly to the total dielectric loss. By virtue of this unduplicated loss behavior, a remarkable effective absorption bandwidth (EAB) beyond ‐10 dB of 8.28 GHz (2.33 mm) and an ultrawide EAB beyond ‐5 dB of 13.72 GHz (4.93 mm) are delivered, which upgrade the EM performance of carbon material to a higher level. This study not only demonstrates the huge perspective of sp2─sp3‐hybridized carbon in EM elimination but also gives pioneering insights into the carbon–carbon polarization mechanism for guiding the development of advanced EM absorption materials.

A high-strength and anti-intergranular corrosion (IGC) Al-6.8Zn-2.2 Mg-Sc-Zr alloy (AS alloy) was designed, and the effects of Sc addition and Cu removal on the microstructure, mechanical properties and corrosion behavior were systematically investigated. Based on transmission electron microscopy (TEM) and Kelvin probe force microscopy (KPFM) techniques, the underlying causes of IGC and exfoliation corrosion (EXCO) of the AS alloy were investigated, and the corrosion mechanism of AS alloy was finally obtained. The AS alloy exhibits excellent mechanical properties with a tensile strength of 601 MPa in the peak-ageing condition at 120 °C, which comes from the pinning effect of Al3(Sc, Zr) dispersions. Moreover, AS alloys of T6 and T74 conditions show outstanding IGC and EXCO resistance. On the one hand, the fine, near-ellipsoidal grains in AS alloy alleviate the peeling stress caused by IGC products by blocking the formation of wedge-shaped gaps along GBs, which then bring about improved EXCO resistance. On the other hand, the removal of Cu from the traditional Al-Zn-Mg-Cu alloy avoids the segregation of Cu into GBs and thereafter reduces the fluctuations of the potential and the electron work function (EWF) across the GBs; the addition of Sc induces the high fraction of LAGBs and thus weakens the solutes' segregation at GBs, which can be beneficial for smoothing the fluctuation of corrosion potential (Ecorr) to enhance the IGC resistance.

Abstract Two-dimensional (2D) layered semiconductors with nonlinear optical (NLO) properties hold great promise to address the growing demand of multifunction integration in electronic-photonic integrated circuits (EPICs). However, electronic-photonic co-design with 2D NLO semiconductors for on-chip telecommunication is limited by their essential shortcomings in terms of unsatisfactory optoelectronic properties, odd-even layer-dependent NLO activity and low NLO susceptibility in telecom band. Here we report the synthesis of 2D SnP2Se6, a van der Waals NLO semiconductor exhibiting strong odd-even layer-independent second harmonic generation (SHG) activity at 1550 nm and pronounced photosensitivity under visible light. The combination of 2D SnP2Se6 with a SiN photonic platform enables the chip-level multifunction integration for EPICs. The hybrid device not only features efficient on-chip SHG process for optical modulation, but also allows the telecom-band photodetection relying on the upconversion of wavelength from 1560 to 780 nm. Our finding offers alternative opportunities for the collaborative design of EPICs.

A finite element method (FEM) combined with subroutines was established and used for tracing the evolution of stresses in M50 steel in quenching. The constitutive relation and thermal physical properties of M50 steel were tested and integrated into the modeling. The finite element analysis, taking into account of thermal stresses and martensitic phase transformation, predicts accurately the high-velocity nitrogen (HNQ) induced residual stresses in the M50 steel bulk. The simulation results suggested that the residual stresses in M50 steel is compressive at the surface while tensive at the center, along with very strong residual stresses at edges. The residual stress reaches to the high level of −810.3 MPa and −1436 MPa in the case of HNQ and water quenching, respectively. The evolution of stress is found to be jointly driven by the thermal stress and phase transformation stress. The thermal stress dominates the evolution at the initial stage while the phase transformation stress becomes dominating once the martensite transformation begins.

Abstract The suitable direct bandgap, high carrier mobility, biologically nontoxicity, and size‐dependent physical properties of low‐dimensional indium phosphide InP (0D, 1D, and 2D) have attracted great interest from scientists. The appealing optical and electronic properties make them promising for the fabrication of state‐of‐the‐art nanoscale electronic and optoelectronic devices including photodiode, photodetector, and solar cells. This Review focuses on the recent development of low‐dimensional InP materials. The synthesis methods and growth mechanisms of high quality low‐dimensional InP are comprehensively recapped. The multifunctional applications in electronic and optoelectronic devices of low‐dimensional InP are discussed, and typical strategies to resolve the main challenges limiting the performance of low‐dimensional InP‐based application are then reviewed. Finally, a brief perspective on the challenges and opportunities of low‐dimensional InP in synthesis, electronics, and optoelectronics applications is also provided.

The nanometer spacing between nucleosomes throughout global chromatin organisation modulates local DNA template access, and through continuous dynamic rearrangements, regulates genome function [1]. However, given that nucleosome packaging occurs on a spatial scale well below the diffraction limit, real time observation of chromatin structure in live cells by optical microscopy has proved technically difficult, despite recent advances in live cell super resolution imaging [2]. One alternative solution to quantify chromatin structure in a living cell at the level of nucleosome proximity is to measure and spatially map Förster resonance energy transfer (FRET) between fluorescently labelled histones - the core protein of a nucleosome [3]. In recent work we established that the phasor approach to fluorescence lifetime imaging microscopy (FLIM) is a robust method for the detection of histone FRET which can quantify nuclear wide chromatin compaction in the presence of cellular autofluorescence [4]. Here we share FLIM data recording histone FRET in live cells co-expressing H2B-eGFP and H2B-mCherry. The data was acquired in the frequency domain [5] and processed by the phasor approach to lifetime analysis [6]. The data can be valuable to researchers interested in using the histone FRET assay since it highlights the impact of cellular autofluorescence and acceptor-donor ratio on quantifying chromatin compaction. The data is related to the research article "Phasor histone FLIM-FRET microscopy quantifies spatiotemporal rearrangement of chromatin architecture during the DNA damage response" [4].