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681 results on '"Luo Xiaorong"'

109. 600 V/7 A Large-Size RESURF β-Ga2O3 Schottky Barrier Diode With High-Temperature Storage Test

Author

Wei, Yuxi, Luo, Xiaorong, Wang, Yuangang, Peng, Xiaosong, Hao, Linyao, Zhao, Kai, Wei, Jie, Li, Xiangnan, Jiang, Zhuolin, Dun, Shaobo, and Feng, Zhihong

Abstract

A new design concept to improve the blocking capability and reliability is proposed and verified by simulations and experiments. Based on the concept, the reduced surface field (RESURF) $\beta $ -Ga2O3 Schottky barrier diode (SBD) is fabricated. Its electrical characteristics are investigated and the thermal stability is evaluated by the long-time high-temperature storage (HTS) test from 400 to 450 K. The RESURF structure is achieved by the oxidation region and SiO2 trench termination. First, the oxidation region is formed by thermal oxidation treatment (TOT) to reduce the surface electron concentration and passivate the oxygen-vacancy type interface states. It not only reduces surface electric field peak ( ${E}_{\text {max}}{)}$ and optimizes the vertical electric field profile, but also improves reliability. Second, the SiO2 trench further reduces the charges to decrease the surface ${E} _{\text {max}}$ . The large-size RESURF SBD exhibits a withstand voltage of 600 V with the reverse leakage current ( ${I}_{\text {R}}{)}$ of less than $10 ~\mu \text{A}$ , as well as a forward current ( ${I}_{\text {F}}{)}$ of 7 A. After the HTS test up to 450 K, the forward ${I}-{V}$ curves exhibit a less than 2% positive shift with almost constant ON-resistance and turn-on voltage; the withstand voltage is still up to 600 V without a sharp increase in ${I}_{\text {R}}$ ; and the fluctuations of extracted reverse recovery time/charge ( ${T}_{\text {rr}}/{Q}_{\text {rr}}{)}$ are less than 5%. The fabricated large-size RESURF $\beta $ -Ga2O3 SBD achieves good compressive performance and thermal stability, showing the great potential in high power applications under high-temperature condition.

Published
2024
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110. An Improved Evaluation Method for the Short-Circuit Withstand Capability of Press-Pack IGBT Modules

Author

Liu, Renkuan, Li, Hui, Yao, Ran, Chen, Siyu, Luo, Xiaorong, Lai, Wei, Chen, Xianping, Tan, Hongtao, and Zhou, Bailing

Abstract

The short-circuit withstand capability (SCWC) of the press-pack insulated gate bipolar transistor (IGBT) module (PP-IGBT) was investigated, and its evaluation method was proposed, taking into account the effects of clamping force and temperature on the SCWC. First, macroscopic and mesoscopic finite element (FE) models were established based on the press-pack package structure. Second, an SCWC test platform was developed, and the PP-IGBTs were tested. The short-circuit (SC) process was simulated based on the test data, macroscopic, and mesoscopic models, and the weak region of SCWC was identified. Third, the effects of the clamping force and temperature on SCWC were obtained by SCWC test and FE simulation. Fourth, an SCWC evaluation method for the PP-IGBT was proposed based on the effects, and its accuracy was experimentally verified using parallel single-chip PP-IGBTs. The results indicate that SCWC is negatively correlated with clamping force and temperature, and the evaluation error of the proposed evaluation method is less than 3%.

Published
2024
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111. Realizing High Stability of Threshold Voltage in NiO/β-Ga2O3 Heterojunction-Gate FET Operating up to 200 °C by Electrothermal Aging Technology

Author

Jiang, Zhuolin, Deng, Hongru, Zhou, Xuanze, Li, Xiangnan, Wei, Yuxi, Wei, Jie, Liu, Qi, Hao, Weibing, Xu, Guangwei, Long, Shibing, and Luo, Xiaorong

Abstract

We proposed an electrothermal aging (ETA) technology to improve stability of threshold voltage ( ${V} _{\text {TH}}$ ) in fabricated NiO/ $\beta $ -Ga2O3 heterojunction-gate FET (HJ-FET). Firstly, the HJ-FET is treated by ETA with a gate stress ( ${V} _{\text {G},\text {Str}}$ ) of −8 V and a thermal stress rising to 60 °C. An interface dipole ionization model is proposed to explain the ETA mechanism. The two kinds of interface dipoles are permanently ionized under electrothermal stress, leading to a thinned space charge region (SCR) as well as the reduced recombination centers concentrations at heterojunction (HJ) interface, which is responsible for the negative and positive shift of the ${I}$ – ${V}$ curves for the HJ-FET and HJ-diode under gate negatively biased, respectively. Secondly, the device treated by ETA is placed for 100 days without stresses at room temperature (ETA + 100D), the forward electrical properties of the devices remain almost unchanged with the gate stress time, and fully consistent with the performance of the device with just completed ETA treatment, proving the credibility of the ETA method to improve stability. Thirdly, the reliability of the device was assessed by negative bias temperature instability (NBTI) and was found to be greatly enhanced. Significantly, at 40 °C, the shift ratio of ${V} _{\text {TH}}$ decreases greatly to 0.4% after ETA + 100D from 31% before ETA. Furthermore, the device exhibits high stability with an extremely low ${V} _{\text {TH}}$ shift ratio of 2.4% even up to 200 °C. Our work demonstrates the great potential of $\beta $ -Ga2O3 HJ devices after ETA for a stable operation in extreme environments.

Published
2024
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121. Experimental Investigation on Threshold Voltage Instability for β-Ga2O3 MOSFET Under Electrical and Thermal Stress

Author

Jiang, Zhuolin, primary, Wei, Yuxi, additional, Lv, Yuanjie, additional, Wei, Jie, additional, Wang, Yuangang, additional, Lu, Juan, additional, Liu, Hongyu, additional, Feng, Zhihong, additional, Zhou, Hong, additional, Zhang, Jincheng, additional, Xu, Guangwei, additional, Long, Shibing, additional, and Luo, Xiaorong, additional

Published
2022
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137. Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy

Author

Yao, Yixu, primary, Jiang, Qimeng, additional, Huang, Sen, additional, Wang, Xinhua, additional, Luo, Xiaorong, additional, Jin, Hao, additional, Guo, Fuqiang, additional, Yin, Haibo, additional, Shi, Jingyuan, additional, Jiang, Haojie, additional, Li, Junfeng, additional, Wang, Wenwu, additional, Shen, Bo, additional, Wei, Ke, additional, and Liu, Xinyu, additional

Published
2021
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149. Investigation of Single Event Transient Effect in Double-Gate InP-Based HEMT

Author

Sun, Shuxiang, Wang, Haoyu, Li, Haoyu, Mei, Hongying, and Luo, Xiaorong

Abstract

An investigation of single event transient (SET) effect in double-gate InP-based HEMT (DG-HEMT) was conducted by simulations. The effects of different drain voltages (VDS), ion incident positions and angles, linear energy transfer (LET) on SET effect in DG-HEMT were comprehensively analyzed. The simulation results showed that the incident position in gate for DG-HEMT is the most sensitive to SET effect. A higher transient peak drain current (Ipeak) induced by SET effect was obtained with the higher LET and VDS. At the larger LET and VDS, more electrons were produced by the larger impact ionization rate, leading to the higher Ipeak. As the incident angle reduces, the track length of incident ions become longer, that is, the sensitive area becomes larger, resulting in the higher Ipeak. Compared with the single gate InP-based HEMT, the irradiation resistance of device with double gate is improved significantly.

Published
2025
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