1,295 results on '"Meneghesso, Gaudenzio"'
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102. Preparing healthcare, academic institutions, and notified bodies for their involvement in the innovation of medical devices under the new European regulation
103. Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives.
104. Chip-Level Degradation of InGaN-Based Optoelectronic Devices
105. Smart Power Devices Nanotechnology
106. Performance-Limiting Traps in GaN-Based HEMTs: From Native Defects to Common Impurities
107. Plasmon‐Assisted Operando Self‐Healing of Cu2O Photocathodes.
108. Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling
109. Time-dependent degradation of hydrogen-terminated diamond MESFETs
110. GaN-based solar cells degradation kinetics investigated at high temperature under high-intensity 405nm optical stress
111. UV LED reliability: degradation mechanisms and challenges
112. Role of carbon in dynamic effects and reliability of 0.15-um AlGaN/GaN HEMTs for RF power amplifiers
113. On the performance and reliability of state-of-the-art commercial UV-C LEDs for disinfection purposes
114. Conduction properties and threshold voltage instability in β-Ga2O3 MOSFETs
115. Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics
116. Deep levels and conduction processes in nitrogen-implanted Ga2O3 Schottky barrier diodes
117. Analysis of dislocation-related and point-defects in III-As layers by extensive DLTS study
118. Optical degradation of InAs quantum-dot lasers on silicon: dependence on temperature and on diffusion processes
119. Modeling the effect of spatial position and concentration of defects on optical degradation of InGaN/GaN multi quantum well light emitting diodes
120. Analysis and design of SARS-CoV-2 disinfection chambers based on UVC LEDs
121. Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics
122. Investigation of deep level defects in n-type GaAsBi
123. Optical temperature measurement across IR opaque Iayers by means of visible excitation and photoluminescence
124. Modeling Hot-Electron Trapping in GaN-based HEMTs
125. Trap parameter extraction and compact modeling of non-ideal dynamic performance in AlGaN/GaN HEMTs
126. Conduction processes, modeling and deep levels in nitrogen-implanted β-Gallium oxide Schottky diodes
127. Defect States Extraction from Stretched Exponential (de)trapping Response
128. Trapping and reliability of wide bandgap devices
129. Physics-based extraction of trap distribution in AlGaN/GaN HEMTs from stretched exponentials
130. Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes
131. Reliability of Commercial UVC LEDs: 2022 State-of-the-Art
132. Defects and Reliability of GaN‐Based LEDs: Review and Perspectives
133. Origin of the Diffusion-Related Optical Degradation of 1.3 μm Inas QD-LDs Epitaxially Grown on Silicon Substrate
134. Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3 Schottky barrier diodes
135. Charge Trapping in GaN Power Transistors: Challenges and Perspectives
136. Experimental analysis of degradation of multi-quantum well GaN based solar cells under current stress
137. A comprehensive study of MEMS behavior under EOS/ESD events: Breakdown characterization, dielectric charging, and realistic cures
138. A Review of the Reliability of Integrated IR Laser Diodes for Silicon Photonics
139. Detrapping Kinetics in N-polar AlGaN/GaN MIS-HEMTs
140. Microstructural Degradation Investigations of OFF-State Stressed 0.15 μm RF AlGaN/GaN HEMTs: Failure Mode related Breakdown
141. Dynamic and Capacitive Characterization of 3D GaN n-p-n Vertical Fin-FETs
142. Current crowding as a major cause for InGaN LED degradation at extreme high current density
143. Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer
144. High Open‐Circuit Voltage Cs2AgBiBr6 Carbon‐Based Perovskite Solar Cells via Green Processing of Ultrasonic Spray‐Coated Carbon Electrodes from Waste Tire Sources.
145. Dynamic Performance Characterization Techniques in Gallium Nitride-Based Electronic Devices
146. Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics
147. Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs
148. UV-Based Technologies for SARS-CoV2 Inactivation: Status and Perspectives
149. Opportunities from Doping of Non‐Critical Metal Oxides in Last Generation Light‐Conversion Devices
150. A new method for CdSexTe1-x band grading for high efficiency thin-absorber CdTe solar cells
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