440 results on '"Mintairov, S. A."'
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102. Gain spectra of lasers based on transitional dimension active region
103. The study of voltage loss reasons in GaAs solar cells with embedded InGaAs quantum dots
104. Isotype barriers in the connecting part of multi-junction solar cells
105. Photovoltaic converters with quantum objects under laser flux of subband photons
106. Investigation of microdisk and microring lasers based on InGaAs/GaAs QWDs by the interferometry method
107. Tuning of laser power converters efficiency by means of temperature
108. Analysis of the lasing characteristics of InGaAs/GaAs WGM microlasers
109. Micro-photoluminescence of InP/GaInP2 quantum dots structures for topological quantum gates
110. The GaAs laser photoconverter (λ 809 nm) current flow mechanisms at the temperature range of 100-420 K
111. The dependence of recombination in GaAs solar cells on the number of included GaInAs quantum objects
112. Optical gain and high-power operation of edge-emitting lasers based on quantum well-dots
113. Temperature Tweaking of the Output Photovoltaic Parameters of Laser Power Converters
114. Modification of InGaAs/GaAs heterostructure density of states and optical gain using hybrid quantum well-dots
115. Selective epitaxy of InP/GaInP quantum dots using SiO2 mask
116. Experimental study of power-limiting factors of 1.1 μm range edge-emitting lasers based on InGaAs/GaAs quantum well-dot nanostructures
117. Investigation of optical properties of In(Ga)As/GaAs mesa structures with active region based on quantum wells, quantum dots, and quantum well-dots
118. Spectral method for determining quantum wells thickness and the composition in strained heterostructures GaAs/InGaAs
119. Spectral analysis of the electroluminescence and photoresponse of heterostructures with InGaAs quantum objects
120. Transverse mode switching in quantum well-dot lasers triggered by gain saturation
121. High-power 0.98 µm range diode lasers based on InGaAs/GaAs quantum well-dot active region
122. The effect of post-growth interruption on the formation of InGaAs/GaAs quantum dots obtained by MOVPE
123. On modelling optical parameters of InAs quantum dots for cascade GaInP / GaAs / Ge solar cells
124. Filling of In(Ga)P/GaInP quantum dot electron states detected by microphotoluminescence
125. Direct modulation characteristics of microdisk lasers with InGaAs/GaAs quantum well-dots
126. Transverse mode competition in narrow-ridge diode lasers
127. Reducing of thermal resistance of edge-emitting lasers based on coupled waveguides
128. Electro-optical properties of InAs and In0.8Ga0.2As quantum dots in GaAs solar cells
129. Effect of carrier localization on performance of coupled large optical cavity diode lasers
130. Optical properties of In0.8Ga0.2As quantum dots in GaAs photovoltaic convertors
131. A novel approach to characterization of bottom sub-cell in multijunction solar cell using photoluminescence.
132. Investigation of InAs/InGaP nano-heterostructures grown by MOVPE for intermediate band solar cells
133. InAs quantum dots for cascade GaInP / GaAs / Ge solar cells
134. Modeling of the internal quantum yield for solar cell with quantum dots.
135. Heterointerfaces in the bottom tunnel part of GaInP/GaAs/Ge solar cells
136. Heating of photovoltaic converter by laser beam: overheating temperature
137. Edge-emitting lasers based on transitionally dimensional InGaAs/GaAs active region
138. Bragg reflectors for measuring optical parameters of layers of metamorphic InAlGaAs/GaAs heterostructures
139. Series spreading resistance in single- and multi-junction concentrator solar cells
140. Edge-emitting and microdisk lasers based on hybrid quantum-well-dot structures
141. The investigation of InGaAs quantum dot growth peculiarities for GaAs intermediate band solar cells
142. Control of Wigner localization and electron cavity effects in near-field emission spectra of In(Ga)P/GaInP quantum-dot structures
143. Near field scanning optical microscopy for investigation of high power semiconductor lasers
144. Monolithic and hybrid integration of InAs/GaAs quantum dot microdisk lasers on silicon
145. Bimodality in Arrays of In0.4Ga0.6As Hybrid Quantum-Confined Heterostructures Grown on GaAs Substrates
146. Investigation of lasers based on coupled waveguides by near-field scanning optical microscopy
147. Edge-emitting lasers based on coupled large optical cavity with high beam stability
148. InGaAs/GaAs hybrid quantum well-dot nanostructures: Impact of substrate orientation and recombination mechanisms
149. Manifestation of counteracting photovoltaic effect on IV characteristics in multi-junction solar cells
150. InAs quantum dots grown by MOCVD in GaAs and metamorphic InGaAs matrixes
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