466 results on '"Myronov, M."'
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102. Strong transport anisotropy in Ge/SiGe quantum wells in tilted magnetic fields
103. Magnetotransport in p-type Ge quantum well narrow wire arrays
104. Ultra high hole mobilities in a pure strained Ge quantum well
105. Эффекты слабой локализации и взаимодействия носителей заряда в двумерном дырочном газе в германиевой квантовой яме в гетероструктуре SiGe/Ge/SiGe
106. Microminiature Hall probes based on n-lnSb(Sn)/i-GaAs heterostructure for pulsed magnetic field applications up to 52T
107. Hooge Mobility Fluctuations in n-InSb Magnetoresistors As a Reference for Access Resistance LF-Noise Measurements of SiGe Metamorphic HMOS FETs
108. Weak antilocalization of high mobility holes in a strained Germanium quantum well heterostructure
109. Observation of Rashba zero-field spin splitting in a strained germanium 2D hole gas
110. Ge/SiGe quantum confined Stark effect modulators with low voltage swing at λ= 1550 nm
111. Ge/SiGe quantum confined Stark effect electro-absorption modulation with low voltage swing at λ = 1550 nm
112. A strained silicon cold electron bolometer using Schottky contacts
113. Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications
114. Weak anti-localization behavior of high mobility 2D hole gas in a strained Ge QW heterostructure
115. RP-CVD growth of high carbon content Si1−xCx epilayers using disilane and trimethylsilane precursors
116. Tensile strain mapping in flat germanium membranes
117. Quantum transport of a high mobility two dimensional hole gas in a strained Ge quantum well
118. Tensile strain mapping in flat germanium membranes
119. Silver antimony Ohmic contacts to moderately doped n-type germanium
120. Tensile strained Ge membranes
121. Developments in germanium-on-silicon epitaxy by reduced pressure chemical vapor deposition
122. Anisotropy in the hole mobility measured along the [110] and [1¯10] orientations in a strained Ge quantum well
123. Heteroepitaxial growth of ferromagnetic MnSb(0001) films on Ge/Si(111) virtual substrates
124. New RP-CVD grown ultra-high performance selectively B-doped pure-Ge 20 nm QWs on (100)Si as basis material for post-Si CMOS technology
125. Calibration of thickness-dependentk-factors for germanium X-ray lines to improve energy-dispersive X-ray spectroscopy of SiGe layers in analytical transmission electron microscopy
126. Groundbreaking room-temperature mobility of 2D holes in a strained Ge quantum well heterostructure grown by Reduced Pressure Chemical Vapor Deposition
127. Design and performance of a prototype mesa-geometry Ge-on-Si single-photon avalanche diode detector at 1310 nm and 1550 nm wavelengths
128. Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors
129. Accurate Reactive Ion Etching of Si, Ge and P Doped Ge in an SF6-O2 Radio-Frequency Plasma
130. Direct Band-gap Electroluminescence from Strained n-Ge Light Emitting Diodes
131. Long Wavelength {greater than or equal to}1.9 m Germanium for Optoelectronics Using Process Induced Strain
132. Optical modulation using the silicon platform
133. Hole-phonon energy loss rate in boron doped silicon
134. Novel fabrication technique for Ge membranes
135. Cooltronics: A new low-temperature tunneling-technology based on Silicon
136. Flexural mode dispersion in ultra-thin Ge membranes
137. Thermally grown GeO2 on epitaxial Ge on Si(001) substrate
138. Pure Ge quantum well with high hole mobility
139. Strained Si and Ge Channels
140. Introduction of Terraces into a Reverse Linearly Graded SiGe Buffer on Si(001) Substrate and Their Effect on the Buffer's Structural Properties
141. Evaluating the cryogenic performance of SiC PiN diodes.
142. High performance silicon optical modulators
143. Ultra-high hole mobility exceeding one million in a strained germanium quantum well
144. Understanding the Role of the Low Temperature Seed Layer in the Growth of Low Defect Relaxed Germanium Layers on (111) Silicon by Reduced Pressure CVD
145. O2 + probe-sample conditions for ultra low energy SIMS depth profiling of nanometre scale Si0.4 Ge0.6 /Ge quantum wells
146. Ohmic contacts to n-type germanium with low specific contact resistivity
147. Thermal Stability of Thin Compressively Strained Ge Surface Channels Grown on Relaxed Si0.2Ge0.8Reverse-Graded Buffers
148. High Speed Silicon based optical modulators
149. Strain enhanced electron cooling in a degenerately doped semiconductor
150. A TEM study of Ge-on-(111)Si structures for potential use in high performance PMOS device technology
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