384 results on '"Nanishi, Y"'
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102. Growth of hexagonal GaN films on the nitridated β‐Ga 2 O 3 substrates using RF‐MBE
103. Thermal and chemical stabilities of In- and N-polar InN surfaces
104. Effects of non‐stoichiometry and compensation on fundamental parameters of heavily‐doped InN
105. Growth of A‐plane (11‐20) In‐rich InGaN on R‐plane (10‐12) sapphire by RF‐MBE
106. Role of localized donor states in transport and photoluminescence of InN revealed by hydrostatic pressure studies
107. Kelvin probe force microscopy study of surface potential transients in cleaved AlGaN∕GaN high electron mobility transistors
108. Dielectric function and Van Hove singularities for In-richInxGa1−xNalloys: Comparison of N- and metal-face materials
109. Study on Growth of Mg-doped N-polar InN by RF-MBE and its Electrical Properties
110. The influence of alloy disorder and hydrostatic pressure on electrical and optical properties of In-rich InGaN compounds
111. Awaking of ferromagnetism in GaMnN through control of Mn valence
112. Superconductivity of InN as an intrinsic property
113. Investigation of polarization-induced electric field screening in InGaN light emitting diodes by means of hydrostatic pressure
114. Band-to-band character of photoluminescence from InN and In-rich InGaN revealed by hydrostatic pressure studies
115. Localized donor state above the conduction band minimum in InN revealed by high pressure and temperature transport experiments
116. Fabrication of InN/InGaN multiple quantum well structures by RF-MBE
117. A‐plane (11$ \bar 2 $0) InN growth on nitridated R‐plane (10$ \bar 1 $2) sapphire by ECR‐MBE
118. Superconductivity of InN with a well defined Fermi surface
119. High‐quality InN grown on KOH wet etched N‐polar InN template by RF‐MBE
120. Coexistence of Mn2+and Mn3+in ferromagnetic GaMnN
121. Structural and luminescence properties of In‐rich InGaN layers grown on InN templates by RF‐MBE
122. Resonant localized donor state above the conduction band minimum in InN
123. Growth of polycrystalline InN on silica glass by ECR-MBE
124. Correlation among growth conditions, crystal structures and optical properties of InN
125. Growth and properties of In‐rich InGaN films grown on (0001) sapphire by RF‐MBE
126. Spectroscopic observation of oxidation process in InN
127. Dependence of the E2 and A1(LO) modes on InN fraction in InGaN epilayers
128. Radio frequency-molecular beam epitaxial growth of InN epitaxial films on (0001) sapphire and their properties
129. Hydrogen In Group-III Nitrides: An Ion Beam Analysis Study.
130. Local structure of rare-earth-doped diluted magnetic semiconductor GaGdN
131. Surface treatment of GaN and InN using (NH 4 ) 2 Sx
132. TEM characterization of InN films grown by RF‐MBE
133. Optical and magnetic properties of the DyN/GaN superlattice
134. MBE-growth, characterization and properties of InN and InGaN
135. Effect of AlN buffer layer on the growth of InN epitaxial film on Si substrate
136. Phonons and free-carrier properties of binary, ternary, and quaternary group-III nitride layers measured by Infrared Spectroscopic Ellipsometry
137. RF-MBE growth of InN/InGaN MQW structures by DERI and their characterization.
138. Fabrication of position-controlled InN nanocolumns by ECR-MBE.
139. Potential and challenges of InN and related alloys for advanced electronic devices.
140. Investigation of cross-sectional potential distribution in GaN-based field effect transistors by Kelvin probe force microscopy.
141. Recent progress and material issues of high power and high frequency AlGaN/GaN HFETs.
142. Effect of Nitridation on Crystallinity of Polycrystalline GaN Grown on Silica Glass by ECR‐MBE
143. Influence of Growth Condition on Superconducting Characteristics of InN on Sapphire (0001)
144. Growth Temperature Dependence of Indium Nitride Crystalline Quality Grown by RF-MBE
145. Optical Properties of InxGa1?xN with Entire Alloy Composition on InN Buffer Layer Grown by RF-MBE
146. Structure Analysis of InN Film Using Extended X-Ray Absorption Fine Structure Method
147. Growth and Characterization of GaGdN and AlGdN on SiC by RF-MBE
148. Effective electron mass and phonon modes inn-type hexagonal InN
149. Dependence of the E2 and Ai (LO) modes on InN fraction in InGaN epilayers.
150. Recent development of nitride semiconductor electronic devices for next generation wireless communications.
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