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333 results on '"She, Juncong"'

109. Oxygen density dependent band gap of reduced graphene oxide.

Author

Huang, Haiming, Li, Zhibing, She, Juncong, and Wang, Weiliang

Subjects
GRAPHENE, DENSITY functionals, OXYGEN, BAND gaps, HYDROXYL group
Abstract

We investigated the stability of reduced graphene oxide for oxygen density ranging from 6.25% to 50% with the density functional theory and found the most, the second most, and the third most stable oxygen configurations. The effect of relaxation of lattice on the electronic properties is found to be negligible for low O coverage and crucial for higher O coverage, respectively. The densities of states and the band gaps were calculated. The bandgap is found to be a non-monotonic function of oxygen density, with minima at O/C = 11.1% and 25%. [ABSTRACT FROM AUTHOR]

Published
2012
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110. Large piezoresistance of single silicon nano-needles induced by non-uniaxial strain.

Author

Xiao, Zhiming, She, Juncong, Deng, Shaozhi, and Xu, Ningsheng

Subjects
*ELECTRIC resistance measurement, *NANOSILICON, *STRAINS & stresses (Mechanics), *NANOSTRUCTURED materials spectra, *SCANNING electron microscopy
Abstract

Silicon (Si) nanostructures may play an important role in future nanoelectronics. Here, arrays of single vertically aligned Si nano-needles (SiNNs) are fabricated and found to exhibit a significant piezoresistance effect under large non-uniaxial strain. The experiments were performed by in situ manipulating of the SiNNs in a scanning electron microscope. The method enables us to determine the piezoresistance effect under the combined action of compressive and tensile strains, which is different from reported works on the piezoresistance effect of Si nanostructures under uniaxial/biaxial strains. This has given rise to an opportunity to further explore the physical origins responsible for the piezoresistance of Si. The relative change in resistivity under the non-uniaxial strain was calculated from the experimental I-V data. The results show that a greater piezoresistance effect can be achieved as compared with that of Si nanowires under uniaxial strain. We propose that the suppression of inter-valley scattering and the change of electron concentration caused by the energy band shift are the main reasons for the large piezoresistance effect. [ABSTRACT FROM AUTHOR]

Published
2011
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112. Electrochromic properties of WO3 nanowire films and mechanism responsible for the near infrared absorption.

Author

Chen, Huanjun, Xu, Ningsheng, Deng, Shaozhi, Zhou, Jun, Li, Zhenglin, Ren, Hao, Chen, Jun, and She, Juncong

Subjects
ELECTROCHROMIC devices, TUNGSTEN, NANOWIRES, THIN films, NEAR infrared spectroscopy, ELECTROCHEMISTRY, POLARONS
Abstract

WO3 nanowire films were prepared by thermal evaporation. The electrochromic properties and relative near infrared absorption mechanism of the films in detail are investigated by electrochemistry, ultraviolet–visible–near infrared spectroscopy, x-ray diffraction spectroscopy, and some theoretical approaches. The studies indicate that WO3 nanowire films show excellent electrochromic properties, including a rapid response time (∼3 s) and a large contrast ratio between the bleached and the colored states. These improvements are due to the loose structure of the films and the small diameter of a single nanowire. It is also shown that a lithium tungsten bronze structure appears when the film is colored, causing two broad absorption bands centering around 920 and 1800 nm. A calculation including the Urbach effect, cation-polaron absorption and large polaron absorption was carried out to interpret the absorbance. A brief discussion of the discrepancy of the transmittance spectrum in the region λ>800 nm between the nanowire film and other traditional films is presented in the end. [ABSTRACT FROM AUTHOR]

Published
2007
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116. Room-Temperature Strong Light–Matter Interaction with Active Control in Single Plasmonic Nanorod Coupled with Two-Dimensional Atomic Crystals

Author

Wen, Jinxiu, primary, Wang, Hao, additional, Wang, Weiliang, additional, Deng, Zexiang, additional, Zhuang, Chao, additional, Zhang, Yu, additional, Liu, Fei, additional, She, Juncong, additional, Chen, Jun, additional, Chen, Huanjun, additional, Deng, Shaozhi, additional, and Xu, Ningsheng, additional

Published
2017
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133. Resonance Coupling in Silicon Nanosphere–J-Aggregate Heterostructures

Author

Wang, Hao, primary, Ke, Yanlin, additional, Xu, Ningsheng, additional, Zhan, Runze, additional, Zheng, Zebo, additional, Wen, Jinxiu, additional, Yan, Jiahao, additional, Liu, Pu, additional, Chen, Jun, additional, She, Juncong, additional, Zhang, Yu, additional, Liu, Fei, additional, Chen, Huanjun, additional, and Deng, Shaozhi, additional

Published
2016
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147. Chemically-doped graphene with improved surface plasmon characteristics: an optical near-field study

Author

Zheng, Zebo, primary, Wang, Weiliang, additional, Ma, Teng, additional, Deng, Zexiang, additional, Ke, Yanlin, additional, Zhan, Runze, additional, Zou, Qionghui, additional, Ren, Wencai, additional, Chen, Jun, additional, She, Juncong, additional, Zhang, Yu, additional, Liu, Fei, additional, Chen, Huanjun, additional, Deng, Shaozhi, additional, and Xu, Ningsheng, additional

Published
2016
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