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188 results on '"Sylvain Bourdel"'

101. High efficiency UWB pulse generator for ultra-low-power applications

Author

Sylvain Bourdel, Remy Vauche, E. Muhr, Herve Barthelemy, Oswaldo Ramos Sparrow, Jean Gaubert, Nicolas Dehaese, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), and Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Engineering, business.industry, Pulse generator, 020208 electrical & electronic engineering, Electrical engineering, Ultra-wideband, 020206 networking & telecommunications, 02 engineering and technology, 7. Clean energy, Die (integrated circuit), Pulse (physics), Power (physics), CMOS, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Energy (signal processing), Voltage
Abstract

19th Bi-Annual French National Microwave Days (JNM), Bordeaux Inst Technol, Bordeaux, FRANCE, JUN 02-05, 2015; International audience; This paper presents the design of a fully integrated ultra-low-power Ultra Wide Band (UWB) pulse generator. The circuit is designed and optimized for low rate and localization applications. This UWB transmitter is based on the impulse response filter method in order to achieve high energy sub-nanosecond pulses. The circuit has been integrated in a ST-Microelectronics CMOS 0.13 mu m technology with a supply voltage of 1.2 V on a die area of 0.56 mm(2). A power manager is used to reduce the power leakages to 3.91 mu W which gives a power consumption of 3.98 Mw at 10 kb/s. The measured dynamic energy consumed per pulse is 68 pJ and the measured energy of the emitted pulse is 2.15 pJ.

Published
2016

102. RF Power Gating: A Low-Power Technique for Adaptive Radios

Author

Nicolas Dehaese, Bruno Paille, Jean-Francois Pons, Sylvain Bourdel, Jean Gaubert, XAVIER, Pascal, Institut d'Informatique et de Mathématiques Appliquées de Grenoble (IMAG), Université Joseph Fourier - Grenoble 1 (UJF)-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), and Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)

Subjects
Engineering, RF front end, business.industry, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.ELEC] Engineering Sciences [physics]/Electromagnetism, 020208 electrical & electronic engineering, RF power amplifier, 02 engineering and technology, [SPI.TRON] Engineering Sciences [physics]/Electronics, 020202 computer hardware & architecture, Power (physics), [SPI.TRON]Engineering Sciences [physics]/Electronics, Reduction (complexity), [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Signal-to-noise ratio, Hardware and Architecture, 0202 electrical engineering, electronic engineering, information engineering, Bit error rate, Electronic engineering, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Software, Energy (signal processing), Block (data storage)
Abstract

International audience; In this paper, we propose a low-power technique, called RF power gating, which consists in varying the active time ratio (ATR) of the RF front end at a symbol time scale. This technique is especially well suited to adapt the power consumption of the receiver to the performance needs without changing its architecture. The effect of this technique on the bit error rate (BER) performances is studied for a basic estimator in the specific case of minimum-shift keying signaling. A system-level energy model is also derived and discussed to estimate precisely the power reduction based on the characteristics and the power consumption of each block. This model allows highlighting the different contributors of the power reduction. The BER results and the energy model are finally merged to determine the best ATR meeting the design constraints. Applying this technique to the IEEE 802.15.4 standard, this paper shows that an ATR of 20% is a good tradeoff to meet the packet error rate constraint while maximizing the energy reduction ratio. Using typical block power consumptions, an energy reduction ratio around 20% can be reached. Even better energy reduction ratios (~60%) are also achievable when most of the blocks are power-gated.

Published
2016

103. Compact highly selective passive notch filter for 3.1–5 GHz UWB receiver system

Author

Sylvain Bourdel, Remy Vauche, Jean Gaubert, Raafat Lababidi, M. Le Roy, André Pérennec, D. Le Jeune, Lab-STICC_ENSTAB_MOM_DIM, Laboratoire des sciences et techniques de l'information, de la communication et de la connaissance (Lab-STICC), École Nationale d'Ingénieurs de Brest (ENIB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-École Nationale Supérieure de Techniques Avancées Bretagne (ENSTA Bretagne)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS)-Université Bretagne Loire (UBL)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-École Nationale d'Ingénieurs de Brest (ENIB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-École Nationale Supérieure de Techniques Avancées Bretagne (ENSTA Bretagne)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS)-Université Bretagne Loire (UBL)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT), Pôle STIC_IDM, École Nationale Supérieure de Techniques Avancées Bretagne (ENSTA Bretagne), Lab-STICC_UBO_MOM_DIM, École Nationale d'Ingénieurs de Brest (ENIB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-Télécom Bretagne-Institut Brestois du Numérique et des Mathématiques (IBNM), Université de Brest (UBO)-Université européenne de Bretagne - European University of Brittany (UEB)-École Nationale Supérieure de Techniques Avancées Bretagne (ENSTA Bretagne)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS)-École Nationale d'Ingénieurs de Brest (ENIB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-Télécom Bretagne-Institut Brestois du Numérique et des Mathématiques (IBNM), Université de Brest (UBO)-Université européenne de Bretagne - European University of Brittany (UEB)-École Nationale Supérieure de Techniques Avancées Bretagne (ENSTA Bretagne)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), École Nationale d'Ingénieurs de Brest (ENIB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-École Nationale Supérieure de Techniques Avancées Bretagne (ENSTA Bretagne)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS)-Université Bretagne Loire (UBL)-IMT Atlantique (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-École Nationale d'Ingénieurs de Brest (ENIB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-École Nationale Supérieure de Techniques Avancées Bretagne (ENSTA Bretagne)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS)-Université Bretagne Loire (UBL)-IMT Atlantique (IMT Atlantique), Université européenne de Bretagne - European University of Brittany (UEB)-École Nationale d'Ingénieurs de Brest (ENIB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-Télécom Bretagne-Institut Brestois du Numérique et des Mathématiques (IBNM), Université de Brest (UBO)-École Nationale Supérieure de Techniques Avancées Bretagne (ENSTA Bretagne)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS)-Université européenne de Bretagne - European University of Brittany (UEB)-École Nationale d'Ingénieurs de Brest (ENIB)-Université de Bretagne Sud (UBS)-Université de Brest (UBO)-Télécom Bretagne-Institut Brestois du Numérique et des Mathématiques (IBNM), Université de Brest (UBO)-École Nationale Supérieure de Techniques Avancées Bretagne (ENSTA Bretagne)-Institut Mines-Télécom [Paris] (IMT)-Centre National de la Recherche Scientifique (CNRS), and Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Engineering, business.industry, Electronic filter topology, Band-stop filter, Constant k filter, Filter design, Filter (video), Electronic engineering, Prototype filter, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, ComputingMilieux_MISCELLANEOUS, m-derived filter, Root-raised-cosine filter
Abstract

This paper deals with the design of highly selective passive notch filter working at 2.4 GHz for 3.1–5 GHz UWB receiver system. The proposed filter aims to enable IEEE 802.11 b/g and UWB standard coexistence in the same terminal device. The filter topology is composed of two paths: the first path contains an all-pass function while the second path contains a band-pass one. By this way, the signal is divided at the circuit input and is combined at its output forming a notch response that exhibits a high rejection at the center frequency of the band-pass filter function. Experimental prototype implemented on Rogers4003 multilayer substrate is built in order to show the benefit of this concept design.

Published
2015

104. A 9-pJ/Pulse 1.42-Vpp OOK CMOS UWB Pulse Generator for the 3.1–10.6-GHz FCC Band

Author

Herve Barthelemy, Remy Vauche, Y. Bachelet, O. Fourquin, Nicolas Dehaese, Sylvain Bourdel, Jean Gaubert, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), and Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)

Subjects
Engineering, Radiation, business.industry, Pulse generator, On-off keying, 020208 electrical & electronic engineering, Electrical engineering, Ultra-wideband, 020206 networking & telecommunications, 02 engineering and technology, Condensed Matter Physics, 7. Clean energy, Amplitude-shift keying, CMOS, Band-pass filter, Pulse-position modulation, 0202 electrical engineering, electronic engineering, information engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, business, ComputingMilieux_MISCELLANEOUS, Pulse-width modulation
Abstract

This paper presents the design of a fully integrated ultra-wideband (UWB) pulse generator for the Federal Communications Commission (FCC) 3.1-10.6-GHz band. This generator is reserved for medium rate applications and achieves pulses for an on-off keying (OOK) modulation, pulse position modulation, or pulse interval modulation. This UWB transmitter is based on the impulse response filter method, which uses an edge combiner in order to excite an integrated bandpass filter. The circuit has been integrated in an ST-Microelectronics CMOS 0.13-?m technology with 1.2-V supply voltage and the die size is 0.54 mm2. The pulse generator power consumption is 9 pJ per pulse and achieves a peak to peak magnitude of 1.42 V. The pulse is FCC compliant and the generator can be used with a rate up to 38 Mbs-1 with an OOK modulation. Based on the FCC power spectral density limitation, a sizing method is also presented.

Published
2010

105. OTA based on CMOS inverters and application in the design of tunable bandpass filter

Author

Jean Gaubert, Sylvain Bourdel, Nicolas Dehaese, Herve Barthelemy, S. Meillere, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), and Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Total harmonic distortion, Engineering, business.industry, Amplifier, Transconductance, 020208 electrical & electronic engineering, Electrical engineering, 020206 networking & telecommunications, 02 engineering and technology, [SPI.TRON]Engineering Sciences [physics]/Electronics, Surfaces, Coatings and Films, Common-mode rejection ratio, CMOS, Band-pass filter, Hardware and Architecture, Operational transconductance amplifier, Signal Processing, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, business, ComputingMilieux_MISCELLANEOUS, Digital biquad filter
Abstract

A new operational transconductance amplifier (OTA) builds with CMOS inverters only is proposed in this paper. Simulations with typical BSIM3V3 parameters of a 0.35 μm CMOS process have shown a 3.56 GHz gain-bandwidth product under 2.5 V supply voltage. The corresponding total harmonic distortion is equal to 0.46% for 2 V peak---peak differential output voltage. At the same supply voltage, the circuit can provided at each output a voltage swing of 2.25 V peak---peak. From VDD = 2 V to VDD = 2.5 V the differential transconductance varies from 72 to 108.4 μ??1. The corresponding common mode rejection ratio and the total power consumption are always lower than ?31 dBc and 800 μW, respectively. Typical application of a biquad filter is proposed to illustrate the circuit capabilities.

Published
2008

106. A Fully Differential 7.2-8.5GHz LNA for a Self Synchronized and Duty-Cycled UWB OOK Receiver

Author

Stephane Meillere, I. Benamor, Remy Vauche, Sylvain Bourdel, Jean Gaubert, Nicolas Dehaese, O. Ramos Sparrow, N. Tall, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), and Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Engineering, Radio receiver design, business.industry, Frequency band, Detector, Bandwidth (signal processing), Impedance matching, Electrical engineering, Noise figure, Low-noise amplifier, Electronic engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, ComputingMilieux_MISCELLANEOUS, Jitter
Abstract

This paper presents a low power Impulse-Radio Ultra-WideBand (IR-UWB) receiver for low range and low data rates applications. The receiver adopts a non coherent detection with duty cycling that allows very low power consumption. The receiver operates in the high band of the UWB frequency band. It has been designed for the 7.2-8.5GHz bandwidth and covers channels 8, 9, 10, and 11 of the IEEE 802.15.4a standard. The receiver has been implemented in 130nm standard CMOS process and occupies an area of 1.5mm2. Post-layout simulations of the fully differential Low Noise Amplifier (LNA) including parasitic effects of the package show 40 dB voltage gain and 4 dB noise figure. The LNA turn on time is less than 3 ns. When synchronized and duty cycled with an analog Clock and Data Recovery (CDR) with 23ns peak to peak jitter the receiver consumes 1.95mW at 1Mbps data rate.

Published
2015

107. Digital cubic interpolation and synchronization for RF receiver using power-gated ADC

Author

Bruno Paille, Jean-Francois Pons, Sylvain Bourdel, Jean Gaubert, Nicolas Dehaese, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), XAVIER, Pascal, Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)

Subjects
Computer science, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 020208 electrical & electronic engineering, 020206 networking & telecommunications, Keying, 02 engineering and technology, Signal, Synchronization, [SPI.TRON] Engineering Sciences [physics]/Electronics, Power (physics), [SPI.TRON]Engineering Sciences [physics]/Electronics, CMOS, 0202 electrical engineering, electronic engineering, information engineering, Bit error rate, Electronic engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Spline interpolation, ComputingMilieux_MISCELLANEOUS, Interpolation
Abstract

In this paper, an implementation of both interpolation and synchronization modules designed for RF receiver using power-gated ADC (PG-ADC) is presented. These modules allow lower bit error rates when demodulating non-uniformly sampled minimum-shift keying (MSK) signal. The proposed architectures are synthesized using CMOS 90 nm technology and are shown to have small occupied area (≈0.05 mm2) and low power consumption (tens to hundreds of µW). The results are detailed for several input data rates and interpolation factors.

Published
2015

108. Fast dichotomic supervised I/Q imbalance compensation algorithm

Author

B. Paille, Nicolas Dehaese, Jean Gaubert, Sylvain Bourdel, J.-F. Pons, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), XAVIER, Pascal, Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Signal processing, Computer science, business.industry, computer.internet_protocol, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.ELEC] Engineering Sciences [physics]/Electromagnetism, Signal, [SPI.TRON] Engineering Sciences [physics]/Electronics, Compensation (engineering), Image response, law.invention, [SPI.TRON]Engineering Sciences [physics]/Electronics, Bluetooth, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, law, Electronic engineering, Wireless, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, computer, Digital signal processing, ComputingMilieux_MISCELLANEOUS, Bluetooth Low Energy
Abstract

A fast I/Q imbalance compensation algorithm is presented. It is demonstrated through MATLAB simulations that with a few samples an image-to-signal ratio (ISR) lower than −25 dB was achieved. On the basis of digital processing of the received signal, this algorithm is compliant with low-cost and low-complexity wireless receivers because it does not require extra time and resources for calibration. Moreover, its fast convergence allows reaching a high enough image rejection ratio by adapting the compensation weight during the reception of a known preamble such as defined by the IEEE 802.15.4 or the Bluetooth low energy standards.

Published
2015

109. 81–86 GHz VCO for Backhaul application with S-CPS based differential inductor in BiCMOS 55nm technology

Author

Sylvain Bourdel, Ekta Sharma, Alfredo Bautista, Philippe Ferrari, and Emmanuel Pistono

Subjects
Voltage-controlled oscillator, Engineering, CMOS, business.industry, Q factor, Phase noise, Electrical engineering, Electronic engineering, dBc, BiCMOS, business, Inductor, Varicap
Abstract

This paper presents the design of a mm-wave VCO for Backhaul applications. This VCO operates between 81–86 GHz and was designed in the BiCMOS 55 nm technology. The innovation is linked to the use of a slow-wave coplanar strip (S-CPS) as a differential inductor. Thanks to high quality factor (≈ 33) of S-CPS, the phase noise and power consumption are improved. The proposed VCO is compared to the classical VCO (lumped inductor and varactor based). The S-CPS based VCO exhibits 3 dB less phase noise, and lower power consumption, with a phase noise of −111 dBc/Hz at 10 MHz offset and a power consumption of 6.84 mW. With 1.2 V supply, the tuning range reaches 7.9%, which is enough for the targeted application.

Published
2015

110. Ultra-wideband voltage controlled oscillator with commutable phases for BPSK implementation

Author

Jean Gaubert, N. Tall, Herve Barthelemy, Remy Vauche, E. Muhr, Abderrahmane Haloua, Sylvain Bourdel, Nicolas Dehaese, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), and Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Engineering, business.industry, 020208 electrical & electronic engineering, Electrical engineering, 020206 networking & telecommunications, 02 engineering and technology, 7. Clean energy, Voltage-controlled oscillator, CMOS, Logic gate, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Current-mode logic, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Wideband, business, Frequency modulation, ComputingMilieux_MISCELLANEOUS, Voltage, Phase-shift keying
Abstract

An ultra-wideband Voltage Controlled Oscillator (VCO) is presented in this paper. The circuit achieves fast startups and stops which allow wideband pulses to be generated. In addition, the VCO allows bipolar modulations as Binary Phase Shift Keying to be implemented without the need of a shaping circuit as a mixer. The proposed VCO has been integrated on a silicon area of 0.003mm2 in a 65nm CMOS technology operating with a supply voltage of 1.2V. The oscillator output provides large differential oscillations from 2.6GHz to 12.3GHz. Measurement has demonstrated the frequency agility of the proposed VCO which covers the mandatory channels of the low (resp. high) bands centered on 4492.8MHz (resp. 7987.2MHz) defined by the IEEE 802.15.4 standard. The VCO power consumption is about 3.2mW/GHz. By using Current Mode Logic (CML) gates, the power consumption can be reduced to 3.84uW only when the VCO is not running (switch off).

Published
2015

111. Analysis of Binary CPFSK With Non-Uniform Sampled Reception

Author

Jean Gaubert, Jean-Francois Pons, Sylvain Bourdel, Nicolas Dehaese, Bruno Paille, Institut d'Informatique et de Mathématiques Appliquées de Grenoble (IMAG), Université Joseph Fourier - Grenoble 1 (UJF)-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), XAVIER, Pascal, Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)

Subjects
Computer science, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.ELEC] Engineering Sciences [physics]/Electromagnetism, Estimator, Minimum-shift keying, Synchronization, [SPI.TRON] Engineering Sciences [physics]/Electronics, [SPI.TRON]Engineering Sciences [physics]/Electronics, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Sampling (signal processing), Modulation, Bit error rate, Electronic engineering, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Quadrature amplitude modulation, ComputingMilieux_MISCELLANEOUS, Phase-shift keying
Abstract

In this paper, the impact on the bit error rate (BER) of the periodic non-uniform sampling implied by a power-gated analog-to-digital converter (ADC) is addressed in the specific case of a binary CPFSK receiver. Analytical and simulated lower bounds of the BER in an additive white Gaussian noise channel for several phase-based estimators are presented and discussed together with their dependency on the sampling synchronization. The main results are summarized in a practical abacus for Minimum Shift-Keying (MSK) modulation. Finally, the proposed techniques are evaluated against the IEEE 802.15.4 specification in MSK mode and lead to an active time ratio of the ADC of only 10% or less. Application of the proposed technique to a more competitive IEEE 802.15.4 compliant architecture available in the literature is also presented.

Published
2015

112. A 4GHz CMOS 130 nm IR-UWB dual front-end transceiver for IEEE802.15 standards

Author

B. Piaget, Stephane Meillere, Jean Gaubert, Laurent Ouvry, Gilles Masson, Remy Vauche, B. Caillat, Nicolas Dehaese, M. Pezzin, O. Fourquin, Sylvain Bourdel, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), and Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)

Subjects
Pulse repetition frequency, Engineering, business.industry, Transmitter, Detector, Electrical engineering, Chip, Front and back ends, CMOS, Electronic engineering, Demodulation, Transceiver, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, ComputingMilieux_MISCELLANEOUS
Abstract

A single chip CMOS 130 nm transceiver for UWB-IR communications was assembled and measured for further integration into a demonstrator aiming compatibility with the recently published IEEE802.15.6 standard for Body Area Networks. The transmitter achieves a 10.9 mA current consumption for the 15.6MHz pulse repetition frequency and 1.5V peak-to-peak voltage. The receiver is an innovative combination of a low current consumption non coherent envelop detector and of a high sensitivity coherent quadrature demodulator. Different compromises in sensitivity, current consumption and acquisition speed are made possible. This paper briefly describes the architecture and provides the chip measurement results.

Published
2014

113. Architectures de systèmes monopuces en radio fréquence: solutions pour une faible consommation

Author

Sylvain Bourdel, Philippe Pannier, Nicolas Dehaese, and Herve Barthelemy

Subjects
Low energy, Frequency conversion, Computer science, Wireless lan, Electrical and Electronic Engineering, Humanities, Computer communication networks
Abstract

Cet article propose une discussion autour de la conception de radio-frequence a 2,45 GHz destines a des applications a faible cout. A partir de considerations liees au cout, un ensemble important de contraintes sur la conception des parties numeriques, analogiques et mixtes du systeme est discute. Des choix technologiques et architecturaux sont proposes, avec analyse de leur adaptation a la norme 802.15.4. Ainsi, a partir d’une approche comparative, cet article insiste sur la pertinence d’une solution basee sur la conversion directe associee a une modulation par deplacement de frequence. Les consequences des protocoles de communication sur la conception sont aussi discutees. On montre aussi les inconvenients de nombreuses architectures connues dans le cadre de la mise en œuvre de systemes radio frequence a faible cout.

Published
2004

114. Special Issue: NEWCAS 2014 and 2015

Author

Dominique Morche, Yannis Le Guennec, and Sylvain Bourdel

Subjects
Engineering, Hardware and Architecture, business.industry, Signal Processing, business, Construction engineering, Surfaces, Coatings and Films
Published
2016

115. Fast turn on/off low noise amplifier for duty cycled ultra-wideband impulse radio

Author

Nicolas Dehaese, I. Benamor, Jean Gaubert, Sylvain Bourdel, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), XAVIER, Pascal, Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)

Subjects
Engineering, business.industry, media_common.quotation_subject, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.ELEC] Engineering Sciences [physics]/Electromagnetism, Electrical engineering, Ultra-wideband, Low-noise amplifier, [SPI.TRON] Engineering Sciences [physics]/Electronics, [SPI.TRON]Engineering Sciences [physics]/Electronics, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Turn (geometry), Electronic engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Duty, ComputingMilieux_MISCELLANEOUS, media_common, Impulse radio
Abstract

International audience

Published
2014

116. High rate UWB CMOS transceiver chipset for WBAN and biomedical applications

Author

Jean Gaubert, Pascal Losco, Nicolas Dehaese, Oswaldo Ramos Sparrow, Sylvain Bourdel, Ines Ben Amor, O. Fourquin, Remy Vauche, E. Muhr, Laboratoire d'Electronique, Antennes et Télécommunications (LEAT), Université Côte d'Azur (UCA)-Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), and Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Engineering, Chipset, business.industry, Transmitter, Surfaces, Coatings and Films, CMOS, Hardware and Architecture, Signal Processing, Electronic engineering, Transceiver, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Sensitivity (electronics), Envelope detector, ComputingMilieux_MISCELLANEOUS, Communication channel, Phase-shift keying
Abstract

This work presents a high rate UWB transceiver chipset implemented in a 130 nm CMOS technology for WBAN and biomedical applications in the 3---5 GHz band. The transmitter architecture is based on a double-filter excitation technique that can generate high magnitude pulses and address bipolar modulations such as BPSK. Measurements show that bipolar pulses with a peak-to-peak voltage of 1.9 Vpp for a power consumption of 139 µW@100 kbps can be generated. The receiver is a non-coherent architecture based on LNA followed by an envelope detector. A BER of 10?3 is achieved for a 3---5 GHz input peak-to-peak amplitude of 3.4 mVpp which corresponds to a ?89.3 dBm sensitivity at 100 kbps. The energy consumption of the receiver and of the transmitter is respectively 0.144 nJ/bit and 196 pJ/bit at 100 Mbps. To improve the budget link of our non-coherent based transceiver a Randomly Alternate OOK signaling is proposed which leads to an estimated communication range of 2.36 m in a free space propagation channel.

Published
2014

117. RF power gating techniques for ultra low power communication

Author

Jean Gaubert, R. Vauche, I. Ben Amor, Nicolas Dehaese, Sylvain Bourdel, Jean-Francois Pons, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), and Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)

Subjects
Ultra low power, Computer science, business.industry, RF power amplifier, Optoelectronics, Gating, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2014

118. Compact inductorless CMOS low-noise amplifier for reconfigurable radio

Author

Herve Barthelemy, Fayrouz Haddad, Sylvain Bourdel, M.T. Belaroussi, Sid Ahmed Tedjini-Baïliche, Abdelhalim Slimane, Trabelsi Mohamed, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Texas A&M University at Qatar, and Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)

Subjects
Engineering, business.industry, Amplifier, 020208 electrical & electronic engineering, Electrical engineering, 020206 networking & telecommunications, 02 engineering and technology, Noise figure, 7. Clean energy, Low-noise amplifier, law.invention, [SPI.TRON]Engineering Sciences [physics]/Electronics, law, Operational transconductance amplifier, 0202 electrical engineering, electronic engineering, information engineering, Operational amplifier, Linear amplifier, Instrumentation amplifier, Electrical and Electronic Engineering, business, Direct-coupled amplifier, ComputingMilieux_MISCELLANEOUS
Abstract

A compact reconfigurable CMOS low-noise amplifier (LNA) is presented for applications in DCS1800, UMTS, WLAN-b/g and Bluetooth standards. The proposed LNA features first a current reuse shunt-feedback amplifier for wideband input matching, low-noise figure and small area. Secondly, a cascode amplifier with a tunable active LC resonator is added for high gain and continuous tuning of bands. Fabricated in a 0.13 μm CMOS process, the measured results show >20 dB power gain

Published
2014

119. Comparison between MOS and bipolar mm-wave power amplifiers in advanced SiGe technologies

Author

Ayssar Serhan, Estelle Lauga-Larroze, Jean-Michel Fournier, N. Corrao, Sylvain Bourdel, XAVIER, Pascal, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, business.industry, Amplifier, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 020208 electrical & electronic engineering, Electrical engineering, 020206 networking & telecommunications, 02 engineering and technology, BiCMOS, [SPI.TRON] Engineering Sciences [physics]/Electronics, Power (physics), [SPI.TRON]Engineering Sciences [physics]/Electronics, 0202 electrical engineering, electronic engineering, information engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2014

120. Fast power switching low-noise amplifier for 6–10 GHz ultra-wideband applications

Author

O. Ramos, I. Benamor, Herve Barthelemy, Sylvain Bourdel, Stephane Meillere, Nicolas Dehaese, Jean Gaubert, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), and Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Noise temperature, Amplifier figures of merit, Materials science, business.industry, 020208 electrical & electronic engineering, Electrical engineering, Power bandwidth, 020206 networking & telecommunications, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, Noise figure, 7. Clean energy, Low-noise amplifier, [SPI.TRON]Engineering Sciences [physics]/Electronics, Hardware_GENERAL, Current sense amplifier, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Effective input noise temperature, Instrumentation amplifier, business, ComputingMilieux_MISCELLANEOUS
Abstract

This work presents a novel fast switching low power low noise amplifier (LNA) for 6–10 GHz ultra wide band applications using 0.13μm CMOS process from STMicroelectronics. The LNA operates at 1.2V. It achieves a high differential voltage gain about 46 dB with 4.4dB noise figure and a power consumption of 24mW. Fast on and off power switching is achieved by using differential amplifiers with DC coupled eliminating the use of large capacitors that leads to long charging time constants. The output voltage is settled in 1.5 ns when the LNA is switched on and off. The circuit consumes only 32.4 μW of dc power when duty-cycled@100kbps allowing reducing the power consumption.

Published
2013

121. High Output Dynamic UWB Pulse Generator for BPSK Modulations

Author

O. Ramos Sparrow, I. Benamor, Sylvain Bourdel, Jean Gaubert, Remy Vauche, E. Muhr, Nicolas Dehaese, Herve Barthelemy, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Institut Supérieur d'Electronique et du Numérique (ISEN-TOULON), Université de Toulon (UTLN), Laboratoire d'Electronique, Antennes et Télécommunications (LEAT), Université Côte d'Azur (UCA)-Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), and IEEE

Subjects
Engineering, Silicon, Pulse Generator, business.industry, Pulse generator, 020208 electrical & electronic engineering, Bandwidth (signal processing), Filter Impulse Response, IR-UWB, Electrical engineering, chemistry.chemical_element, 020206 networking & telecommunications, 02 engineering and technology, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, CMOS, chemistry, 0202 electrical engineering, electronic engineering, information engineering, Bpsk modulation, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, BPSK, ComputingMilieux_MISCELLANEOUS, Phase-shift keying, Voltage, Common emitter
Abstract

IMNP Marseille; International audience; This paper presents the design of a fully integrated pulse generator which allows BPSK modulation to be implemented. This emitter is based on the response filter architecture and has been integrated in a 130 nm CMOS technology with a 1.2 V supply voltage on a silicon area of 2.88 mm 2 . The bandwidth at -10 dB is about 1.8 GHz around 3.52 GHz. The output dynamic voltage is equal to 1.72 V peak to peak on a 100 Ω differential load which gives an energy of 1.93 pJ for the twice bipolar generated pulses and demonstrates the pulse generator capability to be used for bipolar modulations.

Published
2013

122. An inductorless CMOS UWB pulse generator with active pulse shaping circuit

Author

Remy Vauche, E. Muhr, Herve Barthelemy, O. Ramos, Nicolas Dehaese, Jean Gaubert, Sylvain Bourdel, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Institut Lumière Matière [Villeurbanne] (ILM), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), and Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Pulse repetition frequency, Engineering, business.industry, Passive networks, Pulse generator, 020208 electrical & electronic engineering, Bandwidth (signal processing), Electrical engineering, 020206 networking & telecommunications, 02 engineering and technology, Inductor, Pulse shaping, [SPI.TRON]Engineering Sciences [physics]/Electronics, CMOS, Power consumption, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, business, ComputingMilieux_MISCELLANEOUS
Abstract

The design of an UWB pulse generator is presented. The pulse generator is based on an elementary pulse combination technique which enables the emitted pulse to be precisely shaped. This technique is implemented with no inductor or passive network and can be used to ensure regulation compliance. This generator has been fully integrated in a 0.13 μm CMOS standard technology. Its area is 0.06mm2 only and it can be programmed to synthesize different pulse shapes. For FCC compliant pulse shapes, the maximum measured 10dB bandwidth is 3.5GHz, and the maximum peak to peak magnitude is 220mV. The measured maximal power consumption is 87.6mW at 800MHz Pulse Repetition Frequency (PRF).

Published
2013

123. Analysis of the IEEE 802.15.4a UWB PHY layer for optimizing the power consumption of the transmitter

Author

O. Ramos, Sylvain Bourdel, Herve Barthelemy, Nicolas Dehaese, Jean Gaubert, Remy Vauche, Stephane Meillere, P. Losco, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Institut Lumière Matière [Villeurbanne] (ILM), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), and Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)

Subjects
Engineering, IEEE 802.15.4a, business.industry, Pulse generator, Transmitter, Physical layer, 7. Clean energy, [SPI.TRON]Engineering Sciences [physics]/Electronics, Application-specific integrated circuit, Power consumption, Electronic engineering, Hardware_ARITHMETICANDLOGICSTRUCTURES, Field-programmable gate array, business, ComputingMilieux_MISCELLANEOUS, Energy (signal processing)
Abstract

This paper presents an analysis of the power consumption of the UWB PHY layer of the IEEE 802.15.4a standard. This work focuses on the transmitter PHY layer implementation. The influence of the different modes settings on the power consumption is investigated. The considered implementations use an FPGA coupled with an UWB pulse generator implemented in an ASIC. The first PHY layer implementation is fully integrated in the FPGA. The consumption study reveals that the system consumption is reduced with the Mean PRF of 3.9 MHz due to the lower number of emitted pulses. The study also shows that the highest power consumption is due to the 499.2 MHz clock. The second implementation proposes to move the 499.2 MHz clock into the ASIC to reduce its consumption. For the mandatory data rate and the 3.9 MHz Mean PRF, this technique reduces the energy by emitted bit from 2574 pJ to 727 pJ.

Published
2013

124. 2.5GHz digital BPSK modulator built with CMOS inverters

Author

Remy Vauche, Sylvain Bourdel, Herve Barthelemy, Edith Kussener, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), and Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Carrier signal, Computer science, business.industry, 020208 electrical & electronic engineering, Spice, Transistor, Electrical engineering, 020206 networking & telecommunications, 02 engineering and technology, law.invention, [SPI.TRON]Engineering Sciences [physics]/Electronics, CMOS, law, Scalability, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, business, ComputingMilieux_MISCELLANEOUS, Voltage, Phase-shift keying
Abstract

A Digital CMOS BPSK modulator is presented in this paper. PSPICE simulation results of the proposed modulator are presented using BSIM3v3 transistors process parameter of the TSMC-0.18μm 1.8V CMOS technology. Between 1.6V to 1.8V supply voltage, the carrier frequency of the proposed modulator is scalable between 2.3GHz and 2.6GHz. Due to its symmetry, the proposed digital BSK modulator is fully differential.

Published
2013

125. Chip on board 3-10 GHz Impulse Radio Ultra Wideband transmitter with optimized die to antenna wire bond transition

Author

O. Fourquin, Jean-Yves Dauvignac, Nicolas Fortino, Remy Vauche, Sylvain Bourdel, Georges Kossiavas, Ali Chami, Nicolas Dehaese, Jean Gaubert, Patrice Brachat, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Laboratoire d'Electronique, Antennes et Télécommunications (LEAT), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Orange Labs [La Turbie], France Télécom, CREMANT, Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), and Université Nice Sophia Antipolis (1965 - 2019) (UNS)

Subjects
wire bond interconnection}, Engineering, anechoic room, Random wire antenna, 02 engineering and technology, Feed horn, low noise amplifiers, horn antennas, 7. Clean energy, Antenna measurements, Industrial and Manufacturing Engineering, Federal Communications Commission compliant pulses, frequency 12 GHz, size 0.13 mum, standard CMOS technology, 0202 electrical engineering, electronic engineering, information engineering, ultra wideband communication, on-off keying modulation scheme, Transmitter, Electrical engineering, transmitter, Radio frequency power transmission, Electronic, Optical and Magnetic Materials, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Horn antenna, Optoelectronics, circuit on board (CoB), pulse generator, voltage 365 mV, {CMOS integrated circuits, ultra wideband impulse radio transmitter, chip carrier, horn antenna, energy 10 pJ, real time oscilloscope, antenna input, power 12 mW, Antenna tuner, Bandwidth, Electrical and Electronic Engineering, ultra wideband (UWB), Monopole antenna, CMOS impulse generator, Roger 4003 laminate substrate, business.industry, frequency 3 GHz to 10 GHz, 020208 electrical & electronic engineering, 020206 networking & telecommunications, radio transmitters, frequency 1.2 GHz, Transmitter power output, CMOS integrated circuits, Wires, Pulse generation, voltage 1.4 V, Transmitters, chip on board impulse radio ultra wideband transmitter, LNA, Antenna, antenna wire bond transition, Antennas, business
Abstract

In this paper, a low power and low cost ultra wideband impulse radio transmitter is presented. The transmitter includes a pulse generator integrated in a 0.13- $\mu{\rm m}$ standard CMOS technology and an antenna printed on the chip carrier. The board is manufactured with Roger 4003 laminate substrate and has a total area of 50 mm $\times\,$ 18 mm. The transmitter provides 1.4 V peak to peak Federal Communications Commission compliant pulses at antenna input for data rates up to 36 Mb/s in an on–off keying modulation scheme. The transmitter's power consumption is 12 mW at 1.2-GHz pulse repetition frequency and the energy consumption is 10 pJ per pulse. A 365-mV peak voltage emitted pulse is measured in an anechoic room at 0.8 m range with a receiver, including a horn antenna (8.3 dBi), a LNA (32 dB), and a 12-GHz real time oscilloscope.

Published
2013

126. Varactor-tuned active miniature notch filter

Author

Bernard Jarry, Bruno Barelaud, R. Lababidi, Sylvain Bourdel, Julien Lintignat, J-Y. Le Naour, Jean Gaubert, A. Louzir, D. Lo Hine Tong, and J.L. Robert

Subjects
Engineering, Voltage-controlled filter, business.industry, Low-pass filter, Electronic filter topology, Constant k filter, Band-stop filter, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, Optoelectronics, High-pass filter, business, Active filter, Electronic filter
Abstract

In this paper a novel tunable miniature active notch filter based on short circuited quarter-wavelength resonator is presented. This simple filter topology uses tunable Active Capacitance (AC) circuit and serves for trial purposes which are described below. Thanks to the use of a varactor diode in parallel within the AC circuit which allows a simultaneous tuning of the notch central frequency and depth whilst maintaining an electrically stable filter. Experimental prototypes based on conventional discrete surface mount components and assembled on a low-cost FR4 substrate have been built up in order to prove this new concept.

Published
2012

127. An All-Digital Clock and Data Recovery Circuit for Low-to-Moderate Data Rate Applications

Author

B. Bonat, Sylvain Bourdel, Nicolas Dehaese, N. Tall, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab), and Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
Digital electronics, business.industry, Computer science, Synchronization, Data recovery, Digital clock, Phase-locked loop, [SPI]Engineering Sciences [physics], Stratix, Electronic engineering, business, Field-programmable gate array, ComputingMilieux_MISCELLANEOUS, Jitter
Abstract

This paper deals with a digital clock and data recovery (CDR) circuit for low-to-moderate data rate applications. The design is based on the analogy between an analog charge-pump based phase-locked loop (CPPLL) and an all-digital phase-locked loop (ADPLL). The whole CDR design has been implemented and tested using an Altera® Stratix Development Board. Measurements show a recovered clock peak-to-peak jitter of 10 ns (1% UI) for an input data rate of 1 Mbps.

Published
2011

128. ADS modeling of IR-UWB transceiver

Author

Oswaldo RAMOS SPARROW, Sylvain Bourdel, Gilles Jacquemod, Laboratoire d'Electronique, Antennes et Télécommunications (LEAT), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Electronique pour Objets Connectés (EpOC), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Polytech Nice-Sophia-Université Côte d'Azur (UCA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS), and Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)

Subjects
[SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS
Abstract

National audience

Published
2011

129. A remotely UHF powered UWB transmitter for high precision localization of RFID tag

Author

Jean Gaubert, Nicolas Dehaese, Sylvain Bourdel, O. Fourquin, Emmanuel Bergeret, Remy Vauche, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), and Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)

Subjects
Engineering, business.industry, Pulse generator, 020208 electrical & electronic engineering, Transmitter, Process (computing), 020206 networking & telecommunications, Data_CODINGANDINFORMATIONTHEORY, 02 engineering and technology, 7. Clean energy, CMOS, Ultra high frequency, Hardware_GENERAL, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Voltage multiplier, Enhanced Data Rates for GSM Evolution, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Energy harvesting, ComputingMilieux_MISCELLANEOUS
Abstract

The design of a remotely UHF powered UWB transmitter is presented in 0.13µm CMOS standard process. Power harvesting unit is based on a Dickson voltage multiplier and UWB pulse generator uses filtered combined edge method. Multi-Vt technique and CMOS logic allows pulse generator power consumption between two consecutive pulses to be reduced enough to be remotely powered. It achieves FCC compliant pulses having 1.82Vpp and a PRF of 15kHz at 10m thanks to the power harvesting unit.

Published
2011

130. Design and implementation of UWB CMOS LC filters LNA for carrier less impulse radio receivers

Author

Marc Battista, Philippe Pannier, Herve Barthelemy, Yannick Bachelet, Matthieu Egels, Sylvain Bourdel, Jean Gaubert, Amir Fanei, Gilles Bas, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), and Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Engineering, SIMPLE (military communications protocol), Frequency band, business.industry, 020208 electrical & electronic engineering, Electrical engineering, Ultra-wideband, 020206 networking & telecommunications, Context (language use), Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, LC circuit, Surfaces, Coatings and Films, [SPI.TRON]Engineering Sciences [physics]/Electronics, CMOS, Hardware_GENERAL, Hardware and Architecture, Signal Processing, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, business, ComputingMilieux_MISCELLANEOUS, Voltage, Impulse radio
Abstract

The design and the implementation of Ultra-wide-band (UWB) CMOS LC filter LNA for Ultra Wide Band carrier less Impulse Radio receivers is presented. Architectures for both single ended and differential ended LNA are proposed for small fractional bandwidths such as the ECC frequency band and for large fractional bandwidths such as FCC frequency band. Simple guidelines to achieve large voltage gain and low noise figure are given. The implementation in standard CMOS technologies in the context of integrated receivers is discussed and simple layout rules allowing reliable designs are proposed. Several LNA prototypes for different fractional bandwidths have been fabricated in a 0.13 μm CMOS technology. Measurement results agree well with the simulations.

Published
2010

131. Low-power CMOS energy detector for noncoherent impulse-radio UWB receivers

Author

Nicolas Dehaese, Sylvain Bourdel, Remy Vauche, Jean Gaubert, M. Battista, O. Fourquin, N. Tall, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), and Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Engineering, Comparator, business.industry, Amplifier, 020208 electrical & electronic engineering, Transistor, Detector, Electrical engineering, 020206 networking & telecommunications, 02 engineering and technology, law.invention, CMOS, law, Low-power electronics, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Sensitivity (electronics), Energy (signal processing), ComputingMilieux_MISCELLANEOUS
Abstract

A low power CMOS energy detector for 3.1–10.6 GHz non-coherent impulse-radio UWB receivers is implemented in a 0.13 µm CMOS process. The detector architecture is based on a squarer circuit realized with MOS transistors biased in the sub-threshold region. The squared signal is integrated using a low pass amplifier that allows the receiver gain to be optimized. A comparator with a tunable threshold is then used as a decision circuit. Experimental results show that a BER of 10− is achieved for a peak-to-peak voltage of 140 mV at the detector input at 200 Mb/s data rate. Assuming that the detector is driven by a LNA of gain 22 dB, leads to a receiver sensitivity of −45 dBm. The receiver dissipates only 25 mW, corresponding to an energy efficiency of 0.13 nJ/bit and the chip occupies 0.7 mm2.

Published
2010

132. A 1 nJ/b 3.2-to-4.7 GHz UWB 50 Mpulses/s double quadrature receiver for communication and localization

Author

Helene Jacquinot, Pierre Vincent, Dominique Morche, Stephane Paquelet, Sylvain Bourdel, Francois Dehmas, O. Fourquin, Alexis Bisiaux, Jean Gaubert, and Gilles Masson

Subjects
Engineering, CMOS, Robustness (computer science), business.industry, Out-of-band management, Baseband, Electronic engineering, Electrical engineering, Ultra-wideband, Wireless, Ranging, Time domain, business
Abstract

This paper describes the integration in a 0.13 µm CMOS of an Ultra Wide Band (UWB) receiver for communication and localization. It operates in the whole 3.2-to-4.7 GHz band of the IEEE.802.15.4a regulation mask. The proposed double quadrature coherent architecture allows exploiting high resolution capability of short pulses in the time domain, with a low sampling clock at 50 MHz. Architecture offers high flexibility to cope with various channel conditions and robustness against out of band blockers. Maximum measured ranging error at 4m in wireless link is 3.8 cm and total receiver consumption at 50 Mpulses/s rate is 50 mW.

Published
2010

133. Design of CMOS UWB LNA

Author

Jean Gaubert and Sylvain Bourdel

Subjects
CMOS, Computer science, Electronic engineering
Published
2010

134. Fully tunable UWB pulse generator with zero DC power consumption

Author

Jean Gaubert, Sylvain Bourdel, Nicolas Dehaese, Remy Vauche, O. Fourquin, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), and Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Engineering, business.industry, Pulse generator, 020208 electrical & electronic engineering, Electrical engineering, 020206 networking & telecommunications, Data_CODINGANDINFORMATIONTHEORY, 02 engineering and technology, H bridge, 7. Clean energy, Pulse (physics), Generator (circuit theory), CMOS, Hardware_GENERAL, Low-power electronics, Logic gate, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, ComputingMilieux_MISCELLANEOUS, Voltage
Abstract

The design of a fully tunable pulse generator using only logic cells is presented and simulated with 0.13µm standard CMOS process. The generator is based on the elementary pulse combination and can synthesize different UWB pulse shapes. The generator uses logic gates to achieve the elementary pulses and a H-bridge to make the combination which leads to a zero DC power consumption. To achieve FCC compliant pulse having 2V PP magnitude the generator consumes 140 pJ by pulse using 1.2V supply voltage.

Published
2009

135. CMOS UWB pulse generator co-designed with package transition

Author

Remy Vauche, Sylvain Bourdel, Jean Gaubert, Nicolas Dehaese, O. Fourquin, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), and Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)

Subjects
Engineering, Signal generator, business.industry, Pulse generator, 020208 electrical & electronic engineering, Electrical engineering, 020206 networking & telecommunications, 02 engineering and technology, Integrated circuit design, Power budget, Pulse (physics), CMOS, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Integrated circuit packaging, Signal integrity, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, ComputingMilieux_MISCELLANEOUS
Abstract

The design of an UWB pulse generator is presented in the context of low cost applications. The pulse generator is fully integrated in a 0.13 μm CMOS technology and achieves 1Vpp magnitude pulses with only 2.25pJ of energy consumed by pulse and 1.2V voltage supply. The generation method used in this design is well suited for packaged IC using wire bond interconnections. Tow methods of interconnection are presented. It is shown that a co-design of the generator with the package transition can preserve the signal integrity while increasing the pulse magnitude up to 1.4Vpp with the same power budget.

Published
2009

136. Chip-Package co-design of 10 GHz bandwidth low noise active front-end interface

Author

O. Fourquin, Jean Gaubert, M. Battista, Joseph Romen Cubillo, and Sylvain Bourdel

Subjects
Engineering, business.industry, Amplifier, Bandwidth (signal processing), Electrical engineering, Hardware_PERFORMANCEANDRELIABILITY, Chip, Noise figure, CMOS, Chip-scale package, Hardware_INTEGRATEDCIRCUITS, Return loss, business, Common gate
Abstract

We present in this paper the design of a 10 GHz bandwidth low noise active front end interface. This interface uses a common gate amplifier architecture co-designed with the carrier to die bonding wire transition. The carrier to die transition is used to build a low loss third order low pass filter which is used as input matching cell for the common gate amplifier. This Chip-Package interface allows low fabrication cost because it uses standard bonding wires and low silicon area. The proposed Chip-Package interface is used to design a 3.1–10.6 GHz UWB LNA in a 0.13µm CMOS technology. The simulated results show a return loss greater than 10 dB with a noise figure lower than 4.5 dB in the 3.1–10.6 GHz UWB FCC frequency range with a power consumption of 8.6 mW and a silicon area of 0.2 mm2.

Published
2009

137. Enhanced wire bond transition from die to chip carrier for 3.1-10.6 GHz UWB applications

Author

Jean Gaubert, Sylvain Bourdel, J.R. Cubillo, M. Battista, and O. Fourquin

Subjects
Engineering, business.industry, Frequency band, Bandwidth (signal processing), Return loss, Electronic engineering, Optoelectronics, Insertion loss, Chip carrier, Signal integrity, business, Inductive coupling, Electrical impedance
Abstract

We present in this paper a way to optimize the bandwidth of standard wire bond (WB) transition from die to chip carrier. This optimization is based on a simple lumped model of the WB transition taking into account the common ground impedance between the die and the chip carrier levels. The model also includes the magnetic coupling between the signal WB and the grounds WB. This model is validated by full wave electromagnetic simulations. On the basis of this lumped model simple guiding rules to increase the transition bandwidth are given. The signal integrity of the WB transition is enhanced and a return loss greater than 15 dB is obtained in the 3.1-10.6 GHz frequency band with standard WB lengths.

Published
2008

138. Dual Band UHF and Microwave RFID Antenna

Author

Thibaut Deleruyelle, Philippe Pannier, Sylvain Bourdel, Emmanuel Bergeret, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab), and Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
Physics, Coaxial antenna, business.industry, Acoustics, Antenna measurement, Slot antenna, Antenna factor, Antenna efficiency, Radiation pattern, Microstrip antenna, [SPI]Engineering Sciences [physics], Optoelectronics, business, Monopole antenna, ComputingMilieux_MISCELLANEOUS
Abstract

This paper presents a new topology for RFID antenna matched on all UHF and one of the microwave RFIDpsilas band. The antenna can be implemented on different standards of tagpsilas sizes as credit card, 85 times 54 mm, or other common sizes 50 times 50 mm. The most criticals parameters of the antenna are studied in order to predict design rules for implemented different kind of dies on the antenna. Radiation pattern on UHF band is complementary to the radiation pattern on microwave band. The substrate is FR4, 0.8 mm, with epsivr = 4.4. Some purposes are made on future studied of a tri-band antenna on 13.56 MHz, all UHF and 2.45 GHz RFIDpsilas band.

Published
2008

139. High-Voltage-Gain CMOS LNA For 6–8.5-GHz UWB Receivers

Author

Matthieu Egels, M. Battista, Herve Barthelemy, Sylvain Bourdel, Jean Gaubert, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), and Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Frequency band, business.industry, Computer science, Amplifier, 020208 electrical & electronic engineering, Bandwidth (signal processing), Impedance matching, Electrical engineering, 020206 networking & telecommunications, High voltage, 02 engineering and technology, Noise figure, [SPI.TRON]Engineering Sciences [physics]/Electronics, CMOS, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Electrical and Electronic Engineering, business, ComputingMilieux_MISCELLANEOUS, Voltage
Abstract

The design of a fully integrated CMOS low noise amplifiers (LNA) for ultra-wide-band (UWB) integrated receivers is presented. An original LC input matching cell architecture enables fractional bandwidths of about 25%, with practical values, that match the new ECC 6-8.5-GHz UWB frequency band. An associated design method which allows low noise figure and high voltage gain is also presented. Measurements results on an LNA prototype fabricated in a 0.13-mum standard CMOS process show average voltage gain and noise figure of 29.5 and 4.5 dB, respectively.

Published
2008

140. RF Low-Pass Design Guiding Rules to Improve PCB to Die Transition Applied to Different Types of Low-Cost Packages

Author

Herve Barthelemy, Jean Gaubert, Sylvain Bourdel, J.R. Cubillo, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), and Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Engineering, business.industry, Low-pass filter, 020208 electrical & electronic engineering, Electronic filter topology, Bandwidth (signal processing), 020206 networking & telecommunications, 02 engineering and technology, [SPI.TRON]Engineering Sciences [physics]/Electronics, Printed circuit board, 0202 electrical engineering, electronic engineering, information engineering, Return loss, Electronic engineering, Signal integrity, Integrated circuit packaging, Electrical and Electronic Engineering, Network synthesis filters, business, ComputingMilieux_MISCELLANEOUS
Abstract

We present in this paper some design rules to improve the signal integrity (SI) of a package transition. The design rules are based on standard low-pass (LP) filter synthesis methodology. This methodology uses the modeling of the package transition by a pi network and is valid as long as the through phase shift of the package transition remains sufficiently small. Based on this pi network approximation, it is possible to add external distributed elements at the package carrier level and lumped elements at the DIE level to build an equivalent low-pass ladder filter. This approach improves significantly the signal integrity properties of the package transition without modifying the package. In some cases the frequency bandwidth for which the return loss (RL) remains higher than 20 dB can be doubled by using this method.

Published
2008

141. Multi-standard slot antenna in 860–960 MHz and 2.45GHz RFID band

Author

Philippe Pannier, Sylvain Bourdel, Thibaut Deleruyelle, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Radio-Fréquence et d'Intégration de Circuits (RFIC-Lab), and Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])

Subjects
[SPI]Engineering Sciences [physics], Coaxial antenna, Computer science, Antenna measurement, Electronic engineering, Antenna noise temperature, Antenna factor, Antenna rotator, Antenna tuner, Monopole antenna, ComputingMilieux_MISCELLANEOUS, Antenna efficiency
Abstract

The presented antenna shows multiple qualities. Itpsilas easy to matched it on an high level of matching on each frequency band. The antennapsilas bandwidth cover all UHF and one of the microwaves frequency band allowed for RFID, so itpsilas possible to used this antenna on the different standard of RFID band. Thanks to the additive radiation patterns, a reader who can works on UHF and microwaves band increase greatly the probability of tagpsilas detection. One of the perspectives for following tagpsilas antenna design is to match an 13.56 MHz antenna in the blank space of first antenna (Fig.1) in order to enhanced the adaptability of the tag as it presented in [7].

Published
2008

142. A 52-GHz 8.5-dB Traveling-Wave Amplifier in 0.13-$\mu$m Standard CMOS Process

Author

P. Pannier, M. Egels, Jean Gaubert, Sylvain Bourdel, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), and Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Power gain, Engineering, Radiation, business.industry, Amplifier, Coplanar waveguide, 020208 electrical & electronic engineering, Electrical engineering, 020206 networking & telecommunications, 02 engineering and technology, Integrated circuit design, Condensed Matter Physics, 7. Clean energy, [SPI.TRON]Engineering Sciences [physics]/Electronics, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, CMOS, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Cascode, Electrical and Electronic Engineering, business, Monolithic microwave integrated circuit, Gain–bandwidth product, ComputingMilieux_MISCELLANEOUS
Abstract

The design of a traveling-wave amplifier (TWA) in 0.13-mum standard CMOS technology is presented. It is designed to maximize the gain-bandwidth product (GBP). An asymmetric cascode, coplanar waveguide (CPW), and loss compensation technique enables maximization of the TWA GBP. Design and modeling of 90-Omega CPW used to synthesize inductors of the TWA lines is presented. Simulations with a design kit and developed models for CPW show a 52-GHz bandwidth with a maximum power gain of 8.5 dB at 10 GHz for a 135-mW power consumption. Measurements up to 40 GHz confirm these results.

Published
2008

143. 6–10 GHz ultra-wideband CMOS LNA

Author

Matthieu Egels, Jean Gaubert, Sylvain Bourdel, Herve Barthelemy, Marc Battista, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), and Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)

Subjects
Engineering, Noise measurement, Frequency band, business.industry, 020208 electrical & electronic engineering, Impedance matching, Electrical engineering, Ultra-wideband, 020206 networking & telecommunications, High voltage, 02 engineering and technology, Noise figure, Low-noise amplifier, [SPI.TRON]Engineering Sciences [physics]/Electronics, CMOS, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, business, ComputingMilieux_MISCELLANEOUS
Abstract

A two-stage matched ultra-wideband CMOS low noise amplifier (LNA) is presented. The LNA is designed to achieve a low noise figure with high voltage gain. The LNA fabricated in a 0.13 µm CMOS process shows a 3.9 dB average noise figure with a 27 dB voltage gain in the 6–10 GHz frequency band with a power consumption of 14 mW.

Published
2008

144. Ultra Wide Band Band Pass filter embedding a MLF low cost package with wire bound attach process

Author

J.R. Xubillo, Matthieu Egels, M. Battista, Jean Gaubert, Herve Barthelemy, Sylvain Bourdel, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), and Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Engineering, business.industry, 020208 electrical & electronic engineering, Ultra-wideband, 020206 networking & telecommunications, 02 engineering and technology, Low-noise amplifier, Die (integrated circuit), [SPI.TRON]Engineering Sciences [physics]/Electronics, Band-pass filter, Filter (video), 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Integrated circuit packaging, business, Electrical impedance, m-derived filter, ComputingMilieux_MISCELLANEOUS
Abstract

In this paper we propose a design methodology to synthesize a band pass (BP) filter while embedding a package transition using wire bound attach process. The BP filter uses quarter wave coplanar line at the PCB level, the package transition and passive elements on DIE. The BP filter is designed for a low noise amplifier (LNA) receiver in the ECC- UWB band (6-8,5 GHz).

Published
2007

145. Characterization test plan for a PCB to DIE transition in a fcCBGA application

Author

Herve Barthelemy, J.R. Cubillo, Jean Gaubert, Sylvain Bourdel, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), and Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)

Subjects
Engineering, business.industry, 020206 networking & telecommunications, 02 engineering and technology, Finite element method, Line (electrical engineering), Die (integrated circuit), [SPI.TRON]Engineering Sciences [physics]/Electronics, Printed circuit board, Ball grid array, 0202 electrical engineering, electronic engineering, information engineering, Scattering parameters, Electronic engineering, Test plan, business, Flip chip, ComputingMilieux_MISCELLANEOUS
Abstract

In this paper we analyze a characterization test plan of a printed circuit board (PCB) to a flip chip DIE transition trough a ceramic ball grid array (CBGA) package. From finite element method (FEM) simulation results, we propose a testing methodology to extract the wide band RF scattering S parameters of the PCB to the DIE transition. The test plan includes a deembedding short open line (SOL) technique, and a trough reflect line (TRL) calibration on PCB.

Published
2007

146. CMOS inverters based high frequency voltage controlled sinusoidal oscillator

Author

Sylvain Bourdel, Jean Gaubert, M. Battista, and Herve Barthelemy

Subjects
Engineering, Voltage-controlled oscillator, CMOS, business.industry, Oscillation, Transconductance, Phase noise, Electrical engineering, Semiconductor device modeling, dBc, business, Voltage
Abstract

A novel sinusoidal VCO using six digital CMOS inverters is presented in this paper. Simulation with BSIM3V3 parameters of a typical CMOS 0.35 mum process indicates oscillations from 1.28 GHz to 1.46 GHz. Using two additional capacitances about 300 fF, the corresponding frequency range is 491 MHz-562 MHz. The equivalent total power consumption in both cases is lower than llmW. For 1.4 GHz oscillation, the simulated phase noise at DeltaF=1 MHz is lower than -94 dBc/Hz. The proposed circuit operation has been acted from measurements with the commercial HEF4069UBP from Philips semiconductors [1].

Published
2007

147. CMOS UWB transceiver for Impulse Radio

Author

Jean Gaubert, G. Bas, Y. Bachelet, Sylvain Bourdel, and M. Battista

Subjects
Computer science, business.industry, Pulse generator, Electrical engineering, Hardware_PERFORMANCEANDRELIABILITY, Voltage-controlled oscillator, CMOS, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, Systems design, Transient response, Transceiver, business, Impulse response, Block (data storage)
Abstract

In this paper, an Impulse Radio (IR) UWB transceiver system design is presented. The presented circuit includes a bipolar pulse generator based on on-chip filter impulse response, and a LNA coupled with high-speed 1-bit digitizer. The presented study is based on several elementary block realizations (LNA, VCO, RF-filter) on a 0.13 um CMOS standard technology. The impact over the characteristics of the whole system performances from these blocks is analyzed and the design of those main elements is also described.

Published
2007

148. Gm-C low-pass-filter designed for a Zero-IF base-band demodulator

Author

G. Bas, Sylvain Bourdel, Nicolas Dehaese, Herve Barthelemy, Jean Gaubert, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), and Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)

Subjects
Physics, Total harmonic distortion, Frequency-shift keying, business.industry, Frequency multiplier, Low-pass filter, 020208 electrical & electronic engineering, Electrical engineering, 020206 networking & telecommunications, 02 engineering and technology, Current source, Cutoff frequency, [SPI.TRON]Engineering Sciences [physics]/Electronics, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, business, ComputingMilieux_MISCELLANEOUS, Linear circuit, DC bias
Abstract

A versatile 5th order low-cost GM-C low-pass-filter for a Zero-IF base-band demodulation scheme is presented in this paper. The circuit is designed for a low-power 2.45GHz direct-conversion receiver based on frequency shift keying (FSK) modulation with a 2MHz corner frequency to provide rejection of the adjacent channels. Corner frequency of the proposed filter can be easily controlled from a DC bias current source. The circuit has been simulated under 2.5V using the 0.28?m standard CMOS process technology. The total output noise density is equal to 47nVrms at 2MHz. The corresponding total harmonic distortion is lower than 0.3% when a 2MHz-20mV peak-to-peak input sinusoidal voltage is applied. At the same simulation conditions and up to 8MHz, the circuit exhibits a frequency-rejected higher than 28dBc. The filter total silicon area is 100?m×100?m and the total current consumption is 180?A under 2.5V supply voltage.

Published
2007

149. Low-cost CMOS pulse generator for UWB systems

Author

Marc Battista, Y. Bachelet, Jean Gaubert, Matthieu Egels, Nicolas Dehaese, Sylvain Bourdel, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), and Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Pulse repetition frequency, Engineering, business.industry, Frequency band, Pulse generator, 020208 electrical & electronic engineering, Electrical engineering, Ultra-wideband, 020206 networking & telecommunications, 02 engineering and technology, Integrated circuit design, Inductor, 7. Clean energy, Pulse (physics), [SPI.TRON]Engineering Sciences [physics]/Electronics, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, CMOS, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Electrical and Electronic Engineering, business, ComputingMilieux_MISCELLANEOUS
Abstract

The design of a CMOS ultra-wideband (UWB) pulse generator for impulse radio system transmission in the 3.1–10.6 GHz frequency band is presented. The pulse generator uses an elementary pulse combiner, which appears to be well suited to tune the synthesised pulse. The generator is designed with no inductors or external filter in order to reduce the die area and the production cost. Simulations with a standard 0.13 µm CMOS design kit show a 600 mVpp pulse that satisfies the FCC regulation mask and a power consumption of 2.64 mW with a 100 MHz pulse repetition frequency.

Published
2007

150. CMOS inverters based positive type second generation current conveyor

Author

Jean Gaubert, Herve Barthelemy, Sylvain Bourdel, Matthieu Fillaud, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), and Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)

Subjects
Engineering, Transconductance, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, 7. Clean energy, Current conveyor, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, ComputingMilieux_MISCELLANEOUS, business.industry, 020208 electrical & electronic engineering, Electrical engineering, 020206 networking & telecommunications, Swing, Surfaces, Coatings and Films, [SPI.TRON]Engineering Sciences [physics]/Electronics, Semiconductor, CMOS, Hardware and Architecture, Signal Processing, Inverter, Current (fluid), business, Hardware_LOGICDESIGN, Voltage
Abstract

A new versatile class AB low-voltage second generation current conveyor based on CMOS inverters operating in transconductance mode is presented in this letter. Against traditional design based on CCII+, the circuit is able to operate at low supply voltages and offers numerous advantages like class AB operation, large voltage and current swing, synthesis from digital inverters. Simulation results from a typical 0.35 μm CMOS process had demonstrated the circuit capability to operate at high frequency over wide voltage and wide current swings. The proposed circuit operation has been acted from measurements with the HEF4069UBP from Philips semiconductors [1].

Published
2006

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